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STELLARIS-3P-MICDI-GOFAST-PGRT Texas Instruments GoFast
PTH08T240FAST Texas Instruments 1-OUTPUT DC-DC REG PWR SUPPLY MODULE
PTH04T240FAST Texas Instruments 10A, 2.2V to 5.5V Input, Power Module for 3-GHz DSP Systems 11-Surface Mount Module -40 to 85

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Fast Recovery Bridge Rectifier, 60A, 600V

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: - 600V, 5A SCAS05, SCAS1, SCAS2, SCAS4, SCAS6 Standard recovery 1-phase full-wave bridge, 50V - 600V, 70A SCAS05F, SCAS1F, SCAS2F, SCAS4F Fast recovery 1-phase full-wave bridge, 50V - 400V , 1N5415 through 1N5420 Fast recovery axial rectifier, 50V - 600V, Io=4.5A 1N5550 through 1N5554 , assembly, 50V - 3000V, 0.36A - 1.5A SBR05F through SBR25F Fast recovery 1-phase silicon bridge , recovery 1-phase full-wave bridge, 50V - 600V, 4.5A SCAJ05FF, SCAJ10FF, SCAJ15FF Superfast recovery 1 Semtech
Original
fast recovery diode 400v 5A fast recovery diode 1000v 10A fast recovery diode 600v 5A 150a 400v diode bridge IN4954 diode 50v 5A 1N5614 1N5616 1N5618 1N5620 1N5622 1N5615
Abstract: -phase full-wave bridge, 50V - 600V, 70A SCAS05F, SCAS1F, SCAS2F, SCAS4F Fast recovery 1-phase full-wave , Standard recovery 1-phase full-wave bridge, 200V - 600V, 25A SCBAR05F, SCBAR1F, SCBAR2F, SCBAR4F Fast , Standard recovery 3-phase full-wave bridge, 50V - 600V, 18A SC3BA05FF, SC3BA10FF, SC3BA15FF Fast , 600V, 10A SC3BH05F, SC3BH1F, SC3BH2F, SC3BH4F Fast recovery 3-phase full-wave high-current bridge , Standard recovery 3-phase full-wave bridge, 50V - 600V, 5A SC3BJ05FF, SC3BJ10FF, SC3BJ15FF Fast Semtech
Original
1N5617 USC1304 rectifier 400V 5A SCDA6 SCH25000 semtech rectifier bridge Full-Wave Bridge Rectifier SCBAR4F 1N5619 1N5621 1N5623 1N5802 1N5804
Abstract: POWER, PFC 600V Ultra Fast Diode Product Name Status Description Features Package , -220AB TH / Radial TO-220AB page 27 Switch Mode Power Supply : SERVER POWER, PFC 600V Ultra Fast , Rectifiers â'¢ TVS â'¢ Bridge Rectifiers â'¢ Zener Diodes â'¢ Switching Diodes â'¢ X/Y Capacitors â , efficiently under a light current load. Ultra-fast recovery time of the rectifier and low Qg of the switching , and Y-capacitor design, respectively. Regarding input rectifier devices, single-phase bridge Vishay Intertechnology
Original
1N5408 smd diodes bridge rectifier 24V AC to 24v dc 1N4007 1N5408 DO-201AD BYV26EGP DO-204AC DO-15
Abstract: APT60DF60HJ ISOTOP®Fast Diode Full Bridge Power Module VRRM = 600V IC = 60A @ Tc = 80 , High speed rectifiers Features â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ + ~ ~ Ultra fast recovery times Soft recovery characteristics High blocking voltage High current Low leakage current , IF = 60A IF = 120A Tj = 125°C IF = 60A Tj = 25°C VR = 600V Tj = 125°C Min Typ 1.7 2 , Symbol Characteristic Test Conditions Typ Reverse Recovery Charge IRRM Reverse Recovery Microsemi
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APT0502
Abstract: APT60DF60HJ ISOTOP®Fast Diode Full Bridge Power Module VRRM = 600V IC = 60A @ Tc = 80 , speed rectifiers Features · · · · · · · · + ~ ~ Ultra fast recovery times Soft recovery characteristics High blocking voltage High current Low leakage current Very low stray , 60A Tj = 25°C VR = 600V Tj = 125°C Min Typ 1.7 2 1.4 Max 2.3 V 25 500 VR = , Typ Reverse Recovery Charge IRRM Reverse Recovery Time Qrr Reverse Recovery Charge Microsemi
Original
Abstract: VBE 55-12NO7 ECO-PAC TM Single Phase Rectifier Bridge IdAV = 59 A VRRM = 1200 V trr = 40 ns with Fast Recovery Epitaxial Diodes (FRED) VRSM VRRM V V 1200 1200 D , bridge output. 1-2 VBE 55-12NO7 70 A 60 5 Qr IF 50 60 TVJ= 100°C VR = 600V mC TVJ= 100°C VR = 600V A 50 4 IRM 40 TVJ=150°C 3 40 TVJ=100°C TVJ= 25°C 30 , 2 3 V 0 100 4 VF Fig. 1 Forward current IF versus VF Fig. 2 Reverse recovery IXYS
Original
7512N 75-12NO7
Abstract: VUE 75-12NO7 ECO-PAC TM Threee Phase Rectifier Bridge IdAV = 74 A VRRM = 1200 V trr = 40 ns with Fast Recovery Epitaxial Diodes (FRED) VRSM VRRM V V 1200 1200 D , bridge output. 1-2 VUE 75-12NO7 70 A 60 5 Qr IF 50 60 TVJ= 100°C VR = 600V mC TVJ= 100°C VR = 600V A 50 4 IRM 40 TVJ=150°C 3 40 TVJ=100°C TVJ= 25°C 30 , 2 3 V 0 100 4 VF Fig. 1 Forward current IF versus VF Fig. 2 Reverse recovery IXYS
Original
Abstract: VBE 55-12NO7 ECO-PAC TM Single Phase Rectifier Bridge with Fast Recovery Epitaxial Diodes (FRED , current IF versus VF Fig. 2 Reverse recovery charge Qr versus -diF/dt 220 ns 200 TVJ= 100°C VR = 600V , otherwise stated x for resistive load at bridge output. IXYS reserves the right to change limits, test , TVJ=150°C 40 TVJ=100°C TVJ= 25°C 30 5 uC Qr 4 TVJ= 100°C VR = 600V 60 A 50 IRM 40 TVJ= 100°C VR = 600V 3 2 IF= 60A IF= 30A IF= 15A 30 20 IF= 60A IF= 30A IF= 15A 20 1 10 0 0 1 2 IXYS
Original
Abstract: VBE 55-12NO7 ECO-PAC TM Single Phase Rectifier Bridge IdAV = 59 A VRRM = 1200 V trr = 40 ns with Fast Recovery Epitaxial Diodes (FRED) VRSM VRRM V V 1200 1200 D , resistive load at bridge output. 1-2 VBE 55-12NO7 70 A 60 5 Qr IF 50 60 TVJ= 100° C VR = 600V mC TVJ= 100° C VR = 600V A 50 4 IRM 40 TVJ=150° C 3 C , versus VF Fig. 2 Reverse recovery charge Qr versus -diF/dt 2.0 220 ns 400 600 A/ms 1000 IXYS
Original
Abstract: VUE 75-12NO7 ECO-PAC TM Threee Phase Rectifier Bridge with Fast Recovery Epitaxial Diodes (FRED , current IF versus VF Fig. 2 Reverse recovery charge Qr versus -diF/dt 220 ns 200 TVJ= 100°C VR = 600V , otherwise stated x for resistive load at bridge output. IXYS reserves the right to change limits, test , TVJ=150°C 40 TVJ=100°C TVJ= 25°C 30 5 uC Qr 4 TVJ= 100°C VR = 600V 60 A 50 IRM 40 TVJ= 100°C VR = 600V 3 2 IF= 60A IF= 30A IF= 15A 30 20 IF= 60A IF= 30A IF= 15A 20 1 10 0 0 1 2 IXYS
Original
IXYS DS
Abstract: APT60GA60JD60 600V High Speed PT IGBT ® E E POWER MOS 8 is a high speed Punch-Through , E145592 FEATURES · Fast switching with low EMI · Very Low Eoff for maximum efficiency · Ultra low Cres , resistance for low EMI · RoHS compliant TYPICAL APPLICATIONS · ZVS phase shifted and other full bridge · Half bridge · High power PFC boost · Welding · UPS, solar, and other inverters · High frequency, high , @ 600V -55 to 150 300 Unit V A V W Total Power Dissipation @ TC = 25°C Switching Safe Microsemi
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Abstract: New Fast Recovery Diodes in package D-Pak, D 2 Pak, TO-220 & TO-247 QUIETIR Series 600V, 60ns IF , immunity but maintain the "Fast" recovery characteristics and meet the new Electro-Magnetic Interference , IF (AVG) , T J =25°C, trr @ IF = 1A, -di/dt = 100A/us, Vr = -30V Typical Reverse Recovery Waveform , application characteristics of QUIETIR are: · Soft recovery · Low forward voltage drops Then Applications may include: · Welding output diodes · Low EMI Rectifiers for Input Bridge · Low EMI Rotating International Rectifier
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8EWF02S 10ETF02S 10ETF02 20ETF02S 20ETF02 20ETF02FP Rectifiers diodes to-247 mechanical equipment alternators 80EPF02
Abstract: Lowest Available Vf High Frequency Applications Soft Recovery Characteristics ULTRAFAST & FAST Fast , : MZ200 to 1200 25A: 1 phase: MT200 to 800 1 phase fast recovery: MY100X to 400X ER 4A: 1 phase , 10A: 1 phase fast recovery: VJ248XM to 648XM EH 12A: 1 1 16A: 3 3 phase: phase: phase , Standard Recovery Fast Recovery Press Fit 23A: 0230200L to 0600L Consult Factory 40A: 40C20B , (TO83) 21 Silicon Controlled Rectifiers Standard Recovery Fast Recovery TO209AC (TO94 Microsemi
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50A 1200V SCR do213ab scr 8a 200v SCR 30A 100V 5A 200V SCR die US60A
Abstract: · Fast switching with low EMI · ZVS phase shifted and other full bridge · Very Low Eoff for maximum efficiency · Half bridge · Ultra low Cres for improved noise immunity · High power PFC , APT44GA60BD30 600V High Speed PT IGBT T O24 POWER MOS 8 is a high speed Punch-Through , = 125°C 3000 Microsemi Website - http://www.microsemi.com V 6 VCE = 600V, VGS = ±30V Unit ±100 A nA 052-6337 Rev A 5 - 2008 Symbol 130A @ 600V Lead Temperature for Microsemi
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600v 30a IGBT apt30gt60 APT30GT60BR fast recovery diode trr Pt MIC4452
Abstract: · Fast switching with low EMI · ZVS phase shifted and other full bridge · Very Low Eoff for maximum efficiency · Half bridge · Ultra low Cres for improved noise immunity · High power PFC , APT54GA60BD30 600V High Speed PT IGBT T O24 POWER MOS 8 is a high speed Punch-Through , = 125°C 3000 Microsemi Website - http://www.microsemi.com V 6 VCE = 600V, VGS = ±30V Unit ±100 A nA 052-6339 Rev A 5 - 2008 Symbol 161A @ 600V Lead Temperature for Microsemi
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Abstract: APT47GA60JD40 600V High Speed PT IGBT E E POWER MOS 8 is a high speed Punch-Through , # E145592 FEATURES TYPICAL APPLICATIONS · Fast switching with low EMI · ZVS phase shifted and other full bridge · Very Low Eoff for maximum efficiency · Half bridge · Ultra low , Website - http://www.microsemi.com V 6 VCE = 600V, VGS = ±30V Unit ±100 A nA 052-6338 Rev A 5 - 2008 Symbol 139A @ 600V Lead Temperature for Soldering: 0.063" from Case for 10 Microsemi
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ultraFast Recovery Bridge Rectifier APT6017LLL DIODE ED 15 Fast Recovery Rectifier, 300V Ultrafast Recovery Rectifier Bridge
Abstract: PB610F 6 Amp Single Phase Bridge Rectifier 50 to 1000 Volts PB-6 B Features · · · · · Mounting Hole For #6 Screw Low Forward Voltage Any Mounting Position Fast Recovery For High Efficiency Surge , Temperature: -55°C to +150°C Maximum Recurrent Peak Reverse Voltage 50V 100V 200V 400V 600V 800V 1000V Maximum DC Blocking Voltage 50V 100V 200V 400V 600V 800V 1000V G + Microsemi Part Number PB605F PB61F , °C Rated DC Blocking 0.2mA TJ = 100°C Voltage Maximum Reverse Recovery Time 150ns IF=0.5A, IR Microsemi
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PB62F PB64F PB66F PB68F PB605F-PB64F PB68F-PB610F
Abstract: HiPerFREDTM diode - fast reverse recovery - low operating forward voltage - low leakage current ISOPLUS , industry standard outline - UL registered, E 72873 Applications Single phaseleg buck-boost chopper H bridge , bridge AC drives controlled rectifier Ptot per IGBT TC = 25°C Symbol Conditions , reserved 5-4 FII 30-09G Diode Data: 70 A 60 IF 50 40 30 20 10 0 Qr 5 uC 4 TVJ= 100°C VR = 600V IF= 60A IF= 30A IF= 15A IRM 60 A 50 40 30 TVJ= 100°C VR = 600V IF= 60A IF= 30A IF=15A 3 IXYS
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IC110
Abstract: APT60GA60JD60 600V High Speed PT IGBT E E POWER MOS 8 is a high speed Punch-Through , # E145592 FEATURES TYPICAL APPLICATIONS â'¢ Fast switching with low EMI â'¢ ZVS phase shifted and other full bridge â'¢ Very Low E for maximum efficiency off â'¢ Half bridge â , @ 600V °C -55 to 150 TJ = 25° unless otherwise specifi ed C Parameter Test , Collector Current IGES Gate-Emitter Leakage Current Unit 3 4.5 6 VCE = 600V, TJ = Microsemi
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APT60GT60BR
Abstract: APT60GA60JD60 600V High Speed PT IGBT ® E E POWER MOS 8 is a high speed Punch-Through , E145592 FEATURES · Fast switching with low EMI · Very Low Eoff for maximum efficiency · Ultra low Cres , resistance for low EMI · RoHS compliant TYPICAL APPLICATIONS · ZVS phase shifted and other full bridge · Half bridge · High power PFC boost · Welding · UPS, solar, and other inverters · High frequency, high , °C Pulsed Collector Current 1 Gate-Emitter Voltage 2 Ratings 600 112 60 178 ±30 356 178A @ 600V -55 to Microsemi
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