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VS-20ETF12SPBF Vishay Semiconductors 20ETF..SPbF Soft Recovery Series Fast Soft Recovery Rectifier Diode, 20 A visit Digikey
VS-20ETF08SPBF Vishay Semiconductors 20ETF..SPbF Soft Recovery Series Fast Soft Recovery Rectifier Diode, 20 A visit Digikey
BU1006-E3/51 Vishay Semiconductors RECTIFIER BRIDGE 600V 10A BU visit Digikey
BU1506-E3/51 Vishay Semiconductors RECTIFIER BRIDGE 600V 15A BU visit Digikey
CAR0548TN-1A GE Critical Power CAR0548TN 500 Watt Rectifier Module visit GE Critical Power
CAR0548TNYO-1A GE Critical Power CAR0548TN 500 Watt Rectifier Module visit GE Critical Power

Fast Recovery Bridge Rectifier, 60A, 600V

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: - 600V, 5A SCAS05, SCAS1, SCAS2, SCAS4, SCAS6 Standard recovery 1-phase full-wave bridge, 50V - 600V, 70A SCAS05F, SCAS1F, SCAS2F, SCAS4F Fast recovery 1-phase full-wave bridge, 50V - 400V , 1N5415 through 1N5420 Fast recovery axial rectifier, 50V - 600V, Io=4.5A 1N5550 through 1N5554 , assembly, 50V - 3000V, 0.36A - 1.5A SBR05F through SBR25F Fast recovery 1-phase silicon bridge , recovery 1-phase full-wave bridge, 50V - 600V, 4.5A SCAJ05FF, SCAJ10FF, SCAJ15FF Superfast recovery 1 Semtech
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fast recovery diode 400v 5A fast recovery diode 1000v 10A fast recovery diode 600v 5A 150a 400v diode bridge IN4954 diode 50v 5A 1N5614 1N5616 1N5618 1N5620 1N5622 1N5615
Abstract: -phase full-wave bridge, 50V - 600V, 70A SCAS05F, SCAS1F, SCAS2F, SCAS4F Fast recovery 1-phase full-wave , Standard recovery 1-phase full-wave bridge, 200V - 600V, 25A SCBAR05F, SCBAR1F, SCBAR2F, SCBAR4F Fast , Standard recovery 3-phase full-wave bridge, 50V - 600V, 18A SC3BA05FF, SC3BA10FF, SC3BA15FF Fast , 600V, 10A SC3BH05F, SC3BH1F, SC3BH2F, SC3BH4F Fast recovery 3-phase full-wave high-current bridge , Standard recovery 3-phase full-wave bridge, 50V - 600V, 5A SC3BJ05FF, SC3BJ10FF, SC3BJ15FF Fast Semtech
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1N5617 USC1304 rectifier 400V 5A SCDA6 SCH25000 semtech rectifier bridge Full-Wave Bridge Rectifier SCBAR4F 1N5619 1N5621 1N5623 1N5802 1N5804
Abstract: POWER, PFC 600V Ultra Fast Diode Product Name Status Description Features Package , -220AB TH / Radial TO-220AB page 27 Switch Mode Power Supply : SERVER POWER, PFC 600V Ultra Fast , Rectifiers â'¢ TVS â'¢ Bridge Rectifiers â'¢ Zener Diodes â'¢ Switching Diodes â'¢ X/Y Capacitors â , efficiently under a light current load. Ultra-fast recovery time of the rectifier and low Qg of the switching , and Y-capacitor design, respectively. Regarding input rectifier devices, single-phase bridge Vishay Intertechnology
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1N5408 smd diodes bridge rectifier 24V AC to 24v dc 1N4007 1N5408 DO-201AD BYV26EGP DO-204AC DO-15
Abstract: APT60DF60HJ ISOTOP®Fast Diode Full Bridge Power Module VRRM = 600V IC = 60A @ Tc = 80 , speed rectifiers Features · · · · · · · · + ~ ~ Ultra fast recovery times Soft recovery characteristics High blocking voltage High current Low leakage current Very low stray , 60A Tj = 25°C VR = 600V Tj = 125°C Min Typ 1.7 2 1.4 Max 2.3 V 25 500 VR = , Typ Reverse Recovery Charge IRRM Reverse Recovery Time Qrr Reverse Recovery Charge Microsemi
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APT0502
Abstract: APT60DF60HJ ISOTOP®Fast Diode Full Bridge Power Module VRRM = 600V IC = 60A @ Tc = 80 , High speed rectifiers Features â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ + ~ ~ Ultra fast recovery times Soft recovery characteristics High blocking voltage High current Low leakage current , IF = 60A IF = 120A Tj = 125°C IF = 60A Tj = 25°C VR = 600V Tj = 125°C Min Typ 1.7 2 , Symbol Characteristic Test Conditions Typ Reverse Recovery Charge IRRM Reverse Recovery Microsemi
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Abstract: VUE 75-12NO7 ECO-PAC TM Threee Phase Rectifier Bridge IdAV = 74 A VRRM = 1200 V trr = 40 ns with Fast Recovery Epitaxial Diodes (FRED) VRSM VRRM V V 1200 1200 D , bridge output. 1-2 VUE 75-12NO7 70 A 60 5 Qr IF 50 60 TVJ= 100°C VR = 600V mC TVJ= 100°C VR = 600V A 50 4 IRM 40 TVJ=150°C 3 40 TVJ=100°C TVJ= 25°C 30 , 2 3 V 0 100 4 VF Fig. 1 Forward current IF versus VF Fig. 2 Reverse recovery IXYS
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55-12NO7
Abstract: VBE 55-12NO7 ECO-PAC TM Single Phase Rectifier Bridge IdAV = 59 A VRRM = 1200 V trr = 40 ns with Fast Recovery Epitaxial Diodes (FRED) VRSM VRRM V V 1200 1200 D , bridge output. 1-2 VBE 55-12NO7 70 A 60 5 Qr IF 50 60 TVJ= 100°C VR = 600V mC TVJ= 100°C VR = 600V A 50 4 IRM 40 TVJ=150°C 3 40 TVJ=100°C TVJ= 25°C 30 , 2 3 V 0 100 4 VF Fig. 1 Forward current IF versus VF Fig. 2 Reverse recovery IXYS
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7512N
Abstract: VBE 55-12NO7 ECO-PAC TM Single Phase Rectifier Bridge with Fast Recovery Epitaxial Diodes (FRED , current IF versus VF Fig. 2 Reverse recovery charge Qr versus -diF/dt 220 ns 200 TVJ= 100°C VR = 600V , otherwise stated x for resistive load at bridge output. IXYS reserves the right to change limits, test , TVJ=150°C 40 TVJ=100°C TVJ= 25°C 30 5 uC Qr 4 TVJ= 100°C VR = 600V 60 A 50 IRM 40 TVJ= 100°C VR = 600V 3 2 IF= 60A IF= 30A IF= 15A 30 20 IF= 60A IF= 30A IF= 15A 20 1 10 0 0 1 2 IXYS
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Abstract: VUE 75-12NO7 ECO-PAC TM Threee Phase Rectifier Bridge with Fast Recovery Epitaxial Diodes (FRED , current IF versus VF Fig. 2 Reverse recovery charge Qr versus -diF/dt 220 ns 200 TVJ= 100°C VR = 600V , otherwise stated x for resistive load at bridge output. IXYS reserves the right to change limits, test , TVJ=150°C 40 TVJ=100°C TVJ= 25°C 30 5 uC Qr 4 TVJ= 100°C VR = 600V 60 A 50 IRM 40 TVJ= 100°C VR = 600V 3 2 IF= 60A IF= 30A IF= 15A 30 20 IF= 60A IF= 30A IF= 15A 20 1 10 0 0 1 2 IXYS
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IXYS DS
Abstract: VBE 55-12NO7 ECO-PAC TM Single Phase Rectifier Bridge IdAV = 59 A VRRM = 1200 V trr = 40 ns with Fast Recovery Epitaxial Diodes (FRED) VRSM VRRM V V 1200 1200 D , resistive load at bridge output. 1-2 VBE 55-12NO7 70 A 60 5 Qr IF 50 60 TVJ= 100° C VR = 600V mC TVJ= 100° C VR = 600V A 50 4 IRM 40 TVJ=150° C 3 C , versus VF Fig. 2 Reverse recovery charge Qr versus -diF/dt 2.0 220 ns 400 600 A/ms 1000 IXYS
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Abstract: APT60GA60JD60 600V High Speed PT IGBT ® E E POWER MOS 8 is a high speed Punch-Through , E145592 FEATURES · Fast switching with low EMI · Very Low Eoff for maximum efficiency · Ultra low Cres , resistance for low EMI · RoHS compliant TYPICAL APPLICATIONS · ZVS phase shifted and other full bridge · Half bridge · High power PFC boost · Welding · UPS, solar, and other inverters · High frequency, high , @ 600V -55 to 150 300 Unit V A V W Total Power Dissipation @ TC = 25°C Switching Safe Microsemi
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Abstract: New Fast Recovery Diodes in package D-Pak, D 2 Pak, TO-220 & TO-247 QUIETIR Series 600V, 60ns IF , immunity but maintain the "Fast" recovery characteristics and meet the new Electro-Magnetic Interference , IF (AVG) , T J =25°C, trr @ IF = 1A, -di/dt = 100A/us, Vr = -30V Typical Reverse Recovery Waveform , application characteristics of QUIETIR are: · Soft recovery · Low forward voltage drops Then Applications may include: · Welding output diodes · Low EMI Rectifiers for Input Bridge · Low EMI Rotating International Rectifier
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8EWF02S 10ETF02S 10ETF02 20ETF02S 20ETF02 20ETF02FP Rectifiers diodes to-247 mechanical equipment alternators 80EPF02
Abstract: Lowest Available Vf High Frequency Applications Soft Recovery Characteristics ULTRAFAST & FAST Fast , : MZ200 to 1200 25A: 1 phase: MT200 to 800 1 phase fast recovery: MY100X to 400X ER 4A: 1 phase , 10A: 1 phase fast recovery: VJ248XM to 648XM EH 12A: 1 1 16A: 3 3 phase: phase: phase , Standard Recovery Fast Recovery Press Fit 23A: 0230200L to 0600L Consult Factory 40A: 40C20B , (TO83) 21 Silicon Controlled Rectifiers Standard Recovery Fast Recovery TO209AC (TO94 Microsemi
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50A 1200V SCR do213ab scr 8a 200v SCR 30A 100V 5A 200V SCR die US60A
Abstract: · Fast switching with low EMI · ZVS phase shifted and other full bridge · Very Low Eoff for maximum efficiency · Half bridge · Ultra low Cres for improved noise immunity · High power PFC , APT44GA60BD30 600V High Speed PT IGBT T O24 POWER MOS 8 is a high speed Punch-Through , = 125°C 3000 Microsemi Website - http://www.microsemi.com V 6 VCE = 600V, VGS = ±30V Unit ±100 A nA 052-6337 Rev A 5 - 2008 Symbol 130A @ 600V Lead Temperature for Microsemi
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600v 30a IGBT apt30gt60 APT30GT60BR MIC4452 fast recovery diode trr Pt
Abstract: · Fast switching with low EMI · ZVS phase shifted and other full bridge · Very Low Eoff for maximum efficiency · Half bridge · Ultra low Cres for improved noise immunity · High power PFC , APT54GA60BD30 600V High Speed PT IGBT T O24 POWER MOS 8 is a high speed Punch-Through , = 125°C 3000 Microsemi Website - http://www.microsemi.com V 6 VCE = 600V, VGS = ±30V Unit ±100 A nA 052-6339 Rev A 5 - 2008 Symbol 161A @ 600V Lead Temperature for Microsemi
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Abstract: APT47GA60JD40 600V High Speed PT IGBT E E POWER MOS 8 is a high speed Punch-Through , # E145592 FEATURES TYPICAL APPLICATIONS · Fast switching with low EMI · ZVS phase shifted and other full bridge · Very Low Eoff for maximum efficiency · Half bridge · Ultra low , Website - http://www.microsemi.com V 6 VCE = 600V, VGS = ±30V Unit ±100 A nA 052-6338 Rev A 5 - 2008 Symbol 139A @ 600V Lead Temperature for Soldering: 0.063" from Case for 10 Microsemi
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ultraFast Recovery Bridge Rectifier APT6017LLL DIODE ED 15 Fast Recovery Rectifier, 300V Ultrafast Recovery Rectifier Bridge
Abstract: PB610F 6 Amp Single Phase Bridge Rectifier 50 to 1000 Volts PB-6 B Features · · · · · Mounting Hole For #6 Screw Low Forward Voltage Any Mounting Position Fast Recovery For High Efficiency Surge , Temperature: -55°C to +150°C Maximum Recurrent Peak Reverse Voltage 50V 100V 200V 400V 600V 800V 1000V Maximum DC Blocking Voltage 50V 100V 200V 400V 600V 800V 1000V G + Microsemi Part Number PB605F PB61F , °C Rated DC Blocking 0.2mA TJ = 100°C Voltage Maximum Reverse Recovery Time 150ns IF=0.5A, IR Microsemi
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PB62F PB64F PB66F PB68F PB605F-PB64F PB68F-PB610F
Abstract: HiPerFREDTM diode - fast reverse recovery - low operating forward voltage - low leakage current ISOPLUS , industry standard outline - UL registered, E 72873 Applications Single phaseleg buck-boost chopper H bridge , bridge AC drives controlled rectifier Ptot per IGBT TC = 25°C Symbol Conditions , reserved 5-4 FII 30-09G Diode Data: 70 A 60 IF 50 40 30 20 10 0 Qr 5 uC 4 TVJ= 100°C VR = 600V IF= 60A IF= 30A IF= 15A IRM 60 A 50 40 30 TVJ= 100°C VR = 600V IF= 60A IF= 30A IF=15A 3 IXYS
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IC110
Abstract: APT60GA60JD60 600V High Speed PT IGBT E E POWER MOS 8 is a high speed Punch-Through , # E145592 FEATURES TYPICAL APPLICATIONS â'¢ Fast switching with low EMI â'¢ ZVS phase shifted and other full bridge â'¢ Very Low E for maximum efficiency off â'¢ Half bridge â , @ 600V °C -55 to 150 TJ = 25° unless otherwise specifi ed C Parameter Test , Collector Current IGES Gate-Emitter Leakage Current Unit 3 4.5 6 VCE = 600V, TJ = Microsemi
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APT60GT60BR
Abstract: APT60GA60JD60 600V High Speed PT IGBT ® E E POWER MOS 8 is a high speed Punch-Through , E145592 FEATURES · Fast switching with low EMI · Very Low Eoff for maximum efficiency · Ultra low Cres , resistance for low EMI · RoHS compliant TYPICAL APPLICATIONS · ZVS phase shifted and other full bridge · Half bridge · High power PFC boost · Welding · UPS, solar, and other inverters · High frequency, high , °C Pulsed Collector Current 1 Gate-Emitter Voltage 2 Ratings 600 112 60 178 ±30 356 178A @ 600V -55 to Microsemi
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