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FZT694BTA Diodes Incorporated Power Bipolar Transistor, 1A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin visit Digikey Buy

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Part : FZT694BTA Supplier : Diodes Manufacturer : Avnet Stock : - Best Price : €0.2391 Price Each : €0.2930
Part : FZT694BTA Supplier : Diodes Manufacturer : Avnet Stock : - Best Price : $0.2789 Price Each : $0.3419
Part : FZT694BTA Supplier : Zetex Semiconductors Manufacturer : Chip One Exchange Stock : 2,000 Best Price : - Price Each : -
Part : FZT694BTA Supplier : Diodes Manufacturer : Chip1Stop Stock : 85 Best Price : $0.6419 Price Each : $0.7131
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FZT694B Datasheet

Part Manufacturer Description PDF Type
FZT694B Zetex Semiconductors SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR Original
FZT694BTA Zetex Semiconductors TRANS DARLINGTON BJT NPN 120V 1A 3SOT223 T/R Original
FZT694BTC Zetex Semiconductors Transistors (BJT) - Single, Discrete Semiconductor Products, TRANSISTOR NPN HI GAIN SOT223 Original

FZT694B

Catalog Datasheet MFG & Type PDF Document Tags

DSA003714

Abstract: FZT694B SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT694B TYPICAL CHARACTERISTICS , Tamb=25°C IC/IB=100 0.8 FZT694B ISSUE 3 - OCTOBER 1995 FEATURES * High VCEO / Very Low , driver PARTMARKING DETAIL FZT694B 0.2 SYMBOL VALUE UNIT V Collector-Base Voltage 1 , HIGH GAIN TRANSISTOR FZT694B TYPICAL CHARACTERISTICS IC/IB=200 0.8 - (Volts) - (Volts , . 0.4 PARAMETER V V -55°C +25°C +100°C +175°C Tamb=25°C IC/IB=100 0.8 FZT694B
Zetex Semiconductors
Original
DSA003714
Abstract: SOT223 NPN SILICON PLANAR M EDIUM POWER HIGH GAIN TRANSISTOR ISSUE 3 - OCTOBER 1995 FEATURES * High V CE0 / Very Low Saturation Voltage * Gain of 400 at lc=200mA APPLICATIONS * Darlington replacement * Relay / solenoid driver PARTMARKING DETAIL FZT694B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL UNIT 120 V V CEO Collector-Emitter Voltage Emitter-Base Voltage VALUE VCBO , =50V FZT694B TYPICAL CHARACTERISTICS lc- Collector Current (Amps) VCE(sat) V 1C VCE(sat) V 1C lc -
OCR Scan

fzt458

Abstract: SOT223 HIGH VOLTAGE TRANSISTORS Pinout : 1-Base, 2814-Collector, 3-Emitter Type hFE v CBO v CEO v CE(sat) M a x V NPN FZT658 FZT458 BSP19 FZT657 BFN38 FZTA42 BFN36 BSP20 BF720 FZT696B FZT655 FZT694B PNP FZT758 FZT558 BSP16 FZT757 BFN39 FZTA92 BF721 BFN37 FZT796A BSP15 FZT755 FZT795A -400 -400 -350 -300 -300 -300 -300 -250 -200 -200 -150 -140 400 400 400 300 300 300 300 300 300 250 150 120 V , FZTA42 BF720 BFN36 FZT696B BSP20 FZT655 FZT694B
-
OCR Scan
2814-C FZT794A

FZT694B

Abstract: FZT795A powered circuits COMPLEMENTARY TYPE FZT694B PARTMARKING DETAIL FZT795A 3 - 253 SOT223 PNP , powered circuits COMPLEMENTARY TYPE FZT694B PARTMARKING DETAIL FZT795A 3 - 253 Zetex
Zetex Semiconductors
Original
DSA003717

FZT858

Abstract: fzt957 : 1-Base, 2&4-Collector, 3-Emitter Type NPN FZT696B FZT694B FZT692B FZT690B FZT689B FZT688B PNP , FZT792A FZT790A FZT789A FZT788B FZT696B FZT694B FZT692B FZT690B FZT689B FZT688B VcBO V v CEO V lc
-
OCR Scan
FZT858 fzt957 FZT857 FZT855 FZT853 FZT851 FZT869 FZT849
Abstract: SOT223 NPN SILICON PLANAR M EDIUM POWER HIGH GAIN TRANSISTOR ISSUE 3 - OCTOBER 1995 FEATURES * High V CE0 / Very Low Saturation Voltage * Gain of 400 at lc=200m A A P P L IC A T IO N S * Darlington replacement * Relay / solenoid driver PARTM ARKIIM G D ETA IL FZT694B ABSOLUTE M A X IM U M RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current , 3-225 FZT694B TYPICAL CHARACTERISTICS le - Collector Current (Am ps) V C E(sat) V 1C ic - -
OCR Scan
Abstract: SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR IC/IB=200 -55°C +25°C +100°C +175°C Tamb=25°C IC/IB=100 0.8 0.8 IC/IB =10 0.6 FZT694B ISSUE 3 - OCTOBER 1995 FEATURES * High VCEO / Very Low Saturation Voltage * Gain of 400 at IC=200mA APPLICATIONS * Darlington replacement * Relay / solenoid driver PARTMARKING DETAIL FZT694B IC/IB=100 0.6 C E , upon request for this device 3 - 225 IC=50mA, VCE=5V f=50MHz FZT694B TYPICAL CHARACTERISTICS -
Original
Abstract: FZT694B Transistors Si NPN Power HF BJT Military/High-RelN V(BR)CEO (V)120 V(BR)CBO (V)120 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)100 h(FE) Min. Current gain.150 h(FE) Max. Current gain. @I(C) (A) (Test Condition)400m @V(CE) (V) (Test Condition)2.0 f(T) Min. (Hz) Transition Freq130M @I(C) (A) (Test Condition)50m @V(CE) (V) (Test Condition)5.0 V(CE)sat Max. (V).5Ã' @I(C) (A) (Test Condition American Microsemiconductor
Original
Abstract: SOT223 PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 3 - OCTOBER 1995_ FEATURES * HO Volt Vc 'C E O * Gain o f 250 at lc=0,2 Am ps and very lo w VCE(sat) APPLICATIONS * Battery powered circuits COMPLEMENTARY TYPE - FZT694B PARTMARKING DETAIL - FZT795A FZT795A ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage C ollector-E m itter Voltage Em itter-Base Voltage Peak Pulse Current C ontinuous Collector Current Power D issipation at T ,mtf*25°C O perating and Storage Tem -
OCR Scan
B2--10

fmmt495

Abstract: VCEO V ZTX1055A FZT694B ZTX694B FMMT494 FMMT624 ZTX455 FMMT455 FZT855 ZTX855 FZT655 ZTX655 FCX495
Zetex Semiconductors
Original
fmmt495 FMMT625 FMMT495 ZTX1056A ZTX696B
Abstract: BFN38 FZTA42 FZT657 BF720 BSP20 BFN36 BF722 FZT855 FZT853 FZT696B FZT655 FZT694B FZT653 FZT493 t Typical -
OCR Scan
Abstract: SOT223 PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR 1.8 IC /IB=40 1.8 Tamb=25°C IC /IB=20 1.6 -55°C +25°C +100°C +175°C 1.6 IC /IB =10 1.4 1.4 1.2 1.0 0.8 IC /IB =40 1.2 1.0 FZT795A ISSUE 3 - OCTOBER 1995 FEATURES * 140 Volt VCEO * Gain of 250 at IC=0.2 Amps and very low VCE(sat) APPLICATIONS * Battery powered circuits COMPLEMENTARY TYPE  FZT694B PARTMARKING DETAIL  FZT795A C E C 0.8 0.6 VALUE UNIT VCBO -
Original
Abstract: SOT223 PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT795A ISSUE 3 -OCTOBER â'" FEATURES * 140 Volt VCE0 * Gain o f 250 at lc=0.2 Amps and very low VC E(sat) APPLICATIONS * Battery powered circuits COMPLEMENTARY TYPE - FZT694B PARTMARKING DETAIL - FZT795A ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCbo -140 V Collector-Emitter Voltage V CEO -140 V V EB0 -5 V 'cm -1 A -500 mA 2 W -55 -
OCR Scan

bss170

Abstract: BAT54S/SM NPN Transistor BC817-40 : 1-Base, 2 & 4 - Collector, 3-Em itter Type VcBO VCEO Icicontl V NPN FZT696B FZT694B FZT692B FZT690B , /-5 -200/-5 -1000/-25 -1000/-10 -2000/-20 -2000/-10 100 100 100 100 100 100 FZT696B FZT694B , FZT658 FZT458 BSP19 FZT657 BFN38 FZTA42 BSP20 BF720 BF722 BFN36 FZT696B FZT655 FZT694B PNP FZT758 FZT558
-
OCR Scan
bss170 BAT54S/SM NPN Transistor BC817-40 FMMD2837 FMMD2836 F2T694B FMMD2835 FMMT617 FMMT717 FMMT619 FMMT618 ZHCS750
Abstract: 2N5401 â'¢ D1 6.2V 500mW R1 47k D3 MMSD4148 + V1 C4 1nF 50V U Q4 FZT694B Linear Technology
Original
LTC1693 LTC1693-1 LTC1693-2 LTC1693-3 LTC1154 LTC1155

inverter 12v to 220 ac mosfet based

Abstract: 74hc14 philips Q4 FZT694B C3 0.1µF 100V Multiple Output Telecom Power Supply + CO3B 330µF 6.3V
Linear Technology
Original
LT1339 inverter 12v to 220 ac mosfet based 74hc14 philips 2N7002 N-CHANNEL MOSFET PHILIPS MARKING motor driver full bridge 6A siemens bat54 transistor irf620 LTC1156 LTC1157 1160/LT1162 LT1161 LTC1163

MTD20NO6HD

Abstract: mbro530 6.2V 500mW Q4 FZT694B C3 0.1µF 100V Multiple Output Telecom Power Supply + CO3B
Linear Technology
Original
MTD20NO6HD mbro530 MBRO530T1 PC40-EPC17 LT1693 CPHS-EFD20-1S-10P LTC1435

ZTX653 equivalent

Abstract: ZDT6790 index VCEO FZT694B 16 Part number hFE VCE(sat) fT - 3 FZT696B 180
Zetex Semiconductors
Original
ZTX653 equivalent ZDT6790 ZXGD3003E6 transistor equivalent ztx1053a ZTX753 equivalent ZDT1049 2002/95/EC ISO/TS16949
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