EN5050 FX207 52098HA /42895MO TA-0132

FX207 P-Channel Silicon MOSFET Very High-Speed Switching Applications Features Package Dimensions · Low ON-resistance.

Ordering number:EN5050 EN5050 FX207 FX207 P-Channel Silicon MOSFET Very High-Speed Switching Applications Features Package Dimensions · Low ON-resistance. · Very high-speed switching. · 2.5V drive. unit:mm 2121 [FX207 FX207] Switching Time Test CIrcuit 1:No Contact 2:Gate 3:Source 4:No Contact 5:Drain 6:Drain SANYO:XP5 (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Symbol Conditions Ratings Unit VDSS VGSS 12 V 4 ID V ±10 A Drain Current (Pulse) IDP PW10µs, duty cycle1% Allowable Power Dissipation PD PD Tc=25°C 2 W Channel Temperature Tch 150 °C Storage Temperature Tstg 55 to +150 °C 16 A 8 W Mounted on ceramic board (750mm2×0.8mm) Electrical Characteristics at Ta = 25°C Parameter D-S Breakdown Voltage Symbol Conditions V(BR)DSS IDSS ID=1mA, VGS=0 Static Drain-to-Source ON-State Resistance RDS(on) ID=2A, VGS=4V RDS(on) typ max VGS=±8V, VDS=0 Forward Transfer Admittance IGSS VGS(off) | Yfs | Ratings min Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage 12 V VDS=10V, VGS=0 VDS=6V, I D=1mA VDS=6V, I D=1A Unit 100 µA ±10 µA 1.5 V 135 177 m 300 m 0.5 2.5 4 S ID=1A, VGS=2.5V 185 Input Capacitance Ciss VDS=6V, f=1MHz 400 pF Output Capacitance Coss VDS=6V, f=1MHz 370 pF Reverse Transfer Capacitance Crss VDS=6V, f=1MHz 160 pF Turn-ON Delay Time td(on) See specified Test Circuit 20 ns tr See specified Test Circuit 120 ns td(off) See specified Test Circuit 140 ns tf See specified Test Circuit 180 IS=4A, VGS=0 1.0 Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage VSD ns 1.2 V · Marking:207 SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52098HA 52098HA (KT)/42895MO /42895MO (KOTO) TA-0132 TA-0132 No.5050-1/3 FX207 FX207 No.5050-2/3 FX207 FX207 No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 1998. Specifications and information herein are subject to change without notice. PS No.5050-3/3