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FT6112 Datasheet

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FT6112 N/A FET Data Book Scan
FT6112D N/A FET Data Book Scan

FT6112

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: January 1990 Edition 1.1 PRODUCT PROFILE. FUJITSU FT6112, FT6112D Power MOS FE T Arrays , 1A 130 - 1.0 10 - V HA V V r = 120 V l R = 15 fxA FT6112, FT6112D Threshhold , FT6112, FT6112D Source-Drain D iod e Forw ard Voltage Capacitance-Drain to Source Voltage Ta , .R. ^ 1% 4 -1 7 FT6112, FT6112D Pow er D issipation Derating Total Power Dissipation Pj , (FT6112D only) Forw ard Voltage Reverse Current Reverse Voltage VF Ir Vr If Copyright© IMO by FUJITSU -
OCR Scan
Abstract: 2SK X4 FT6112 450 60 0 25 0.4 10 3 ton=55ns, toff=110nstyp VDD=60V, 1D=3A 247A 2SK x 4 FT6112D , 120 DSS ±20 3 D 36 ± lOOn ±20 100« 120 0.9 1.7 10 Im 1.2 2.4 10 1.5 FT6112 s±a Motor-D MOS N E 120 DSS ±20 4.5 D 40 ±100n ±20 100« 120 0.9 1. 7 10 Im 2. 5 4. 5 10 3 FT6112D *±m Motor-D MOS -
OCR Scan
FT6111 FT6111D FT6120 FT6121 FT6122 FT6122D ft6120d ft6121d FT6120D FT6121D
Abstract: Section 4 =ield Effect Transistor Arrays - Pag* 4 -7 4-11 4-15 4-19 4-23 4-27 D e vic e C m * (ns) A t a Glance Id (A) Maximum Frequency V d s s (V ) FT6110 FT8110D FT6111 FT6111D FT6112 FT6112D FT6120 FT6120D FT6121 FT6121D FT6122 FT6122D H M -65 R M -65 R M -6S R M -67 R M -6 7 R M -6 7 120 120 120 120 120 120 120 120 120 120 120 120 ±2 ±2 ±3 ±3 ±4.5 ±4.5 ±1-5 ±15 ±2.5 ± 2 .5 ±4 ±4 4 -1 -
OCR Scan
Abstract: FT6111D FT6112D FT 6 110 FT6111 F T6112 * ; 4-M O SFET ope ratio n B 120 A C irc u it Config. V o ss (V -
OCR Scan
FT6110D rIP 31 TRANSISTOR 6122D fet transistor ft m67 transistor RM67