ENN6149 FSS237 D1099TS TA-2286

N-Channel Silicon MOSFET FSS237 Load Switching Applications Features Package Dimensions · Ultralow ON resistance. ·

Ordering number:ENN6149 ENN6149 N-Channel Silicon MOSFET FSS237 FSS237 Load Switching Applications Features Package Dimensions · Ultralow ON resistance. · 2.5V drive. unit:mm 2116 [FSS237 FSS237] 5 4 0.595 Specifications 1.27 0.43 0.1 1.5 5.0 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain 0.2 1.8max 1 6.0 4.4 0.3 8 SANYO : SOP8 Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 20 V Gate-to-Source Voltage VGSS ±10 V ID 14 A Drain Current (DC) Drain Current (pulse) IDP PW10µs, duty cycle1% 52 A Allowable Power Dissipation PD Mounted on a ceramic board (1200mm2×0.8mm) 2.0 Channel Temperature Tch 150 W °C Storage Temperature Tstg 55 to +150 °C Electrical Characteristics at Ta = 25°C Parameter Symbol Drain-to-Source Breakdown Voltage Conditions Ratings min Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance V(BR)DSS IDSS ID=1mA, VGS=0 VDS=20V, VGS=0 IGSS VGS(off) VGS=±8V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=14A 30 RDS(on)1 ID=14A, VGS=4V Unit max 0.4 | yfs | Zero-Gate Voltage Drain Current typ 20 V 1 µA ±10 µA 1.3 V 45 S 6.5 9 m 9 12 m RDS(on)2 ID=7A, VGS=2.5V Input Capacitance Ciss VDS=10V, f=1MHz 5100 pF Output Capacitance Coss VDS=10V, f=1MHz 1400 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 950 pF Continued on next page. Marking : S237 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D1099TS D1099TS (KOTO) TA-2286 TA-2286 No.6149-1/4 FSS237 FSS237 Continued from preceding page. Parameter Symbol Turn-ON Delay Time Ratings Conditions min typ Unit max td(on) ns See specified Test Circuit 470 ns See specified Test Circuit 640 ns Qg Total Gate Charge ns 750 tf Fall Time 60 See specified Test Circuit td(off) Turn-OFF Delay Time See specified Test Circuit tr Rise Time VDS=10V, VGS=10V, ID=14A 160 nC 9.4 nC 24.8 Gate-to-Source Charge Qgs Gate-to-Drain "Miller" Charge Qgd VDS=10V, VGS=10V, ID=14A VDS=10V, VGS=10V, ID=14A Diode Forward Voltage VSD IS=14A, VGS=0 nC 0.8 1.2 V Switching Time Test Circuit VDD=10V VIN 4V 0V ID=14A RL=0.71 VIN PW=10µs D.C.1% D VOUT G FSS237 FSS237 P.G 50 S I D - VDS 2.0 18 1.5V 16 3.5V 3.0V 2.5V 8 6 4 12 10 8 6 4 2 2 VGS=1.0V 0 0 0.2 0.4 0.6 0.8 0 0 1.0 0.2 0.4 Drain-to-Source Voltage, VDS V 25° 5°C -2 a= T °C 75 2 Static Drain-to-Source On-State Resistance, RDS (on) m Forward Transfer Admittance, | yfs | S 5 3 C 10 7 5 3 2 2 3 5 7 1.0 2 3 5 7 10 Drain Current, ID A 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2 3 R DS(on) - VGS 25 VDS=10V 7 0.6 Gate-to-Source Voltage, VGS V | yfs | - I D 100 1.0 0.1 C 12 14 75°C 14 Ta=-2 5° Drain Current, ID A Drain Current, ID A 16 10 ID - VGS VDS=10V 25°C 4.0V 18 20 V 20 5 Ta=25°C 20 ID=14A 15 ID=7A 10 5 0 0 1 2 3 4 5 6 7 8 9 10 11 12 Gate-to-Source Voltage, VGS V No.6149-2/4 FSS237 FSS237 4 2 0 -50 -25 0 25 50 75 100 125 150 0.1 7 5 3 2 0.01 7 5 3 2 0.001 0.2 0.3 Ciss,Coss,Crss - VDS 10 f = 1MHz Gate-to-Source Voltage, VGS V 9 3 2 Ciss,Coss,Crss pF 0.5 10000 7 5 Ciss 3 2 Coss 1000 7 5 Crss 3 2 0.9 1.0 140 160 VGS - Q g 8 7 6 5 4 3 2 2 4 6 8 10 12 14 16 18 0 0 20 20 40 60 3 Drain Current, ID A 2 td(off) tf tr 3 2 100 7 5 td(on) 3 2 10 7 0.1 2 3 5 7 1.0 2 3 5 7 2 10 3 Drain Current, ID A PD - 2.4 2.0 100 120 A S O 100 7 5 3 2 VDD =10V VGS=4V 1000 7 5 80 Total Gate Charge, Qg nC SW Time - I D Switching Time, SW Time ns 0.8 VDS=10V ID =14A Drain-to-Source Voltage, VDS V Allowable Power Dissipation, PD W 0.7 1 100 0 10000 7 5 0.6 Diode Forward Voltage, VSD V Ambient Temperature, Ta °C 100000 7 5 0.4 °C 6 - 25 4A I D=1 C =4V ,VGS 8 1.0 7 5 3 2 5°C V 2.5 S= 7A,VG I D= 10 25° 12 I F - VSD VGS= 0 =7 Forward Current, IF A Static Drain-to-Source ON-State Resistance, RDS (on) m 14 100 7 5 3 2 10 7 5 3 2 Ta R DS(on) - Ta 16 1m s 10 ms ID = 1 4 A 10 7 5 3 2 10 DC 1.0 7 5 3 2 0.1 7 5 3 2