FSL9230D FSL9230R -200V MIL-S-19500 FSL9230D1 FSL9230D3 FSL9230R1 FSL9230R3 - Datasheet Archive

 

FSL9230R 3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description · 3A,

 

FSL9230D FSL9230D, FSL9230R FSL9230R 3A, -200V -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description · 3A, -200V -200V, rDS(ON) = 1.50 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed. · Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) · Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias The Intersil portfolio of SEGR resistant radiation hardened MOSFETs includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings. Numerous packaging options are also available. · Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM This MOSFET is an enhancement-mode silicon-gate power field-effect transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to be radiation tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switching regulation, switching converters, motor drives, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits. · Photo Current - 3.0nA Per-RAD(Si)/s Typically · Neutron - Maintain Pre-RAD Specifications for 1E13 Neutrons/cm2 - Usable to 1E14 Neutrons/cm2 Reliability screening is available as either commercial, TXV equivalent of MIL-S-19500 MIL-S-19500, or Space equivalent of MIL-S-19500 MIL-S-19500. Contact Intersil for any desired deviations from the data sheet. Ordering Information RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND 10K Commercial FSL9230D1 FSL9230D1 10K TXV FSL9230D3 FSL9230D3 100K Commercial FSL9230R1 FSL9230R1 100K TXV FSL9230R3 FSL9230R3 100K Space FSL9230R4 FSL9230R4 Symbol D G Formerly available as type TA17737 TA17737. S Package TO-205AF D ©2001 Fairchild Semiconductor Corporation G S FSL9230D FSL9230D, FSL9230R FSL9230R Rev. A FSL9230D FSL9230D, FSL9230R FSL9230R Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20k) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS Maximum Power Dissipation TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulsed Avalanche Current, L = 100µH, (See Test Figure). . . . . . . . . . . . . . . . . . . IAS Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IS Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL (Distance >0.063in (1.6mm) from Case, 10s Max) FSL9230D FSL9230D, FSL9230R FSL9230R -200 -200 UNITS V V 3 2 9 ±20 A A A V 25 10 0.20 9 3 9 -55 to 150 300 W W W/ oC A A A oC oC CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER Drain to Source Breakdown Voltage Gate Threshold Voltage SYMBOL BVDSS VGS(TH) TEST CONDITIONS VGS = VDS, ID = 1mA Zero Gate Voltage Drain Current IDSS VDS = -160V -160V, VGS = 0V Gate to Source Leakage Current IGSS VGS = ±20V Drain to Source On-State Voltage VDS(ON) Drain to Source On Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge rDS(ON)12 td(ON) tr TC = -55oC TC = 25oC TC = 125oC TC = 25oC TC = 125oC TC = 25oC TC = 125oC TC = 25oC TC = 125oC VDD = -100V -100V, ID = 3A, RL = 33.3, VGS = -12V, RGS = 7.5 td(OFF) tf Threshold Gate Charge Qg(TH) VGS = 0V to -2V Qgd CISS COSS Reverse Transfer Capacitance Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient ©2001 Fairchild Semiconductor Corporation VDD = -100V -100V, ID = 3A Qgs Output Capacitance V - - -7.0 V -2.0 - -6.0 V -1.0 - - V - - 25 µA - - 250 µA - - 100 nA - - 200 nA - -4.73 V - 1.00 1.50 - - 2.78 - - 65 ns - - 130 ns - 140 ns ID = 3A, VDS = -15V VDS = -25V, VGS = 0V, f = 1MHz - 120 ns - - 61 nC - 31 41 nC - - 2.5 nC 5.5 8.7 nC - VGS = 0V to -12V Input Capacitance - - Qg(12) V(PLATEAU) - - Gate Charge at 12V Gate Charge Drain UNITS - ID = 2A, VGS = -12V VGS = 0V to -20V Plateau Voltage MAX - VGS = -12V, ID = 3A Qg(TOT) Gate Charge Source TYP -200 ID = 1mA, VGS = 0V MIN 13 17 nC - -6 - V - 850 - pF - 185 - pF CRSS - 35 - pF RJC - - 5.0 oC/W RJA - - 175 oC/W FSL9230D FSL9230D, FSL9230R FSL9230R Rev. A FSL9230D FSL9230D, FSL9230R FSL9230R Source to Drain Diode Specifications PARAMETER SYMBOL Forward Voltage VSD Reverse Recovery Time TEST CONDITIONS MIN MAX -0.6 - -1.8 V - ISD = 3A TYP - 190 ns ISD = 3A, dISD/dt = 100A/µs trr Electrical Specifications up to 100K RAD UNITS TC = 25oC, Unless Otherwise Specified MIN MAX UNITS Drain to Source Breakdown Volts PARAMETER (Note 3) SYMBOL BVDSS VGS = 0, ID = 1mA TEST CONDITIONS -200 - V Gate to Source Threshold Volts (Note 3) VGS(TH) VGS = VDS, ID = 1mA -2.0 -6.0 V Gate to Body Leakage (Notes 2, 3) IGSS VGS = ±20V, VDS = 0V - 100 nA Zero Gate Leakage (Note 3) IDSS VGS = 0, VDS = -160V -160V - 25 µA Drain to Source On-State Volts (Notes 1, 3) VDS(ON) VGS = -12V, ID = 3A - -4.73 V Drain to Source On Resistance (Notes 1, 3) rDS(ON)12 VGS = -12V, ID = 2A - 1.50 NOTES: 1. Pulse test, 300µs Max. 2. Absolute value. 3. Insitu Gamma bias must be sampled for both VGS = -12V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS . Single Event Effects (SEB, SEGR) (Note 4) ENVIRONMENT (NOTE 5) TEST SYMBOL Single Event Effects Safe Operating Area SEESOA ION SPECIES TYPICAL LET (MeV/mg/cm) TYPICAL RANGE (µ) APPLIED VGS BIAS (V) (NOTE 6) MAXIMUM VDS BIAS (V) Ni 26 43 20 -200 Br 37 36 5 -200 Br 37 36 10 -160 Br 37 36 15 -100 Br 37 36 20 -40 NOTES: 4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN. 5. Fluence = 1E5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). Typical Performance Curves Unless Otherwise Specified LET = 26MeV/mg/cm2, RANGE = 43µ LET = 37MeV/mg/cm2, RANGE = 36µ FLUENCE = 1E5 IONS/cm2 (TYPICAL) LIMITING INDUCTANCE (HENRY) 1E-3 -200 VDS (V) -160 -120 -80 -40 TEMP = 25oC 0 0 5 ILM = 10A 30A 1E-5 100A 300A 1E-6 1E-7 10 15 20 25 VGS (V) FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA ©2001 Fairchild Semiconductor Corporation 1E-4 -10 -30 -100 -300 -1000 DRAIN SUPPLY (V) FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT GAMMA DOT CURRENT TO IAS FSL9230D FSL9230D, FSL9230R FSL9230R Rev. A FSL9230D FSL9230D, FSL9230R FSL9230R Typical Performance Curves Unless Otherwise Specified (Continued) 50 3 10 TC = 25oC ID , DRAIN CURRENT (A) ID , DRAIN (A) 4 2 1 100µs 1ms 1 10ms OPERATION IN THIS AREA MAY BE 100ms LIMITED BY rDS(ON) 0 -50 0 50 100 0.1 -1 150 TC , CASE TEMPERATURE (oC) -10 -100 -600 VDS , DRAIN TO SOURCE VOLTAGE (V) FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE FIGURE 4. FORWARD BIAS SAFE OPERATING AREA 2.5 PULSE DURATION = 250ms, VGS = -12V, ID = 2A -12V QG QGS QGD NORMALIZED rDS(ON) 2.0 1.5 1.0 0.5 VG 0.0 -80 CHARGE FIGURE 5. BASIC GATE CHARGE WAVEFORM ©2001 Fairchild Semiconductor Corporation -40 0 40 80 120 160 TJ , JUNCTION TEMPERATURE (oC) FIGURE 6. NORMALIZED rDS(ON) vs JUNCTION TEMPERATURE FSL9230D FSL9230D, FSL9230R FSL9230R Rev. A FSL9230D FSL9230D, FSL9230R FSL9230R NORMALIZED THERMAL RESPONSE (ZJC) Typical Performance Curves Unless Otherwise Specified (Continued) 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 PDM 0.01 SINGLE PULSE 0.001 10-5 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC + TC 10-4 10-3 10-2 t1 t2 10-1 100 101 t, RECTANGULAR PULSE DURATION (s) FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE IAS , AVALANCHE CURRENT (A) 20 10 STARTING TJ = 25oC STARTING TJ = 150oC IF R = 0 tAV = (L) (IAS) / (1.3 RATED BVDSS - VDD) IF R 0 tAV = (L/R) lN [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1] 1 0.01 0.1 1 tAV , TIME IN AVALANCHE (ms) 10 FIGURE 8. UNCLAMPED INDUCTIVE SWITCHING ©2001 Fairchild Semiconductor Corporation FSL9230D FSL9230D, FSL9230R FSL9230R Rev. A FSL9230D FSL9230D, FSL9230R FSL9230R Test Circuits and Waveforms ELECTRONIC SWITCH OPENS WHEN IAS IS REACHED VDS L BVDSS + CURRENT I TRANSFORMER AS tP - VARY tP TO OBTAIN REQUIRED PEAK IAS 0V VDS IAS VDD + 50 - tP VDD 50V-150V DUT 50 VGS 20V tAV FIGURE 9. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 10. UNCLAMPED ENERGY WAVEFORMS tON VDD tOFF td(ON) td(OFF) tr RL VDS tf 90% 90% VDS 0V 10% DUT VGS = -12V 10% 90% RGS 50% VGS 50% PULSE WIDTH 10% FIGURE 11. RESISTIVE SWITCHING TEST CIRCUIT ©2001 Fairchild Semiconductor Corporation FIGURE 12. RESISTIVE SWITCHING WAVEFORMS FSL9230D FSL9230D, FSL9230R FSL9230R Rev. A FSL9230D FSL9230D, FSL9230R FSL9230R Screening Information Screening is performed in accordance with the latest revision in effect of MIL-S-19500 MIL-S-19500, (Screening Information Table). Delta Tests and Limits (JANTXV Equivalent, JANS Equivalent) TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MAX UNITS Gate to Source Leakage Current IGSS VGS = ±20V ±20 (Note 7) nA Zero Gate Voltage Drain Current IDSS VDS = 80% Rated Value Drain to Source On Resistance rDS(ON) Gate Threshold Voltage VGS(TH) ±25 (Note 7) ±20% (Note 8) ID = 1.0mA µA ±20% (Note 8) TC = 25oC at Rated ID V NOTES: 7. Or 100% of Initial Reading (whichever is greater). 8. Of Initial Reading. Screening Information TEST JANTXV EQUIVALENT JANS EQUIVALENT Gate Stress VGS = -30V, t = 250µs VGS = -30V, t = 250µs Pind Optional Required Pre Burn-In Tests (Note 9) MIL-S-19500 MIL-S-19500 Group A, Subgroup 2 (All Static Tests at 25oC) MIL-S-19500 MIL-S-19500 Group A, Subgroup 2 (All Static Tests at 25oC) Steady State Gate Bias (Gate Stress) MIL-STD-750 MIL-STD-750, Method 1042, Condition B VGS = 80% of Rated Value, TA = 150oC, Time = 48 hours MIL-STD-750 MIL-STD-750, Method 1042, Condition B VGS = 80% of Rated Value, TA = 150oC, Time = 48 hours Interim Electrical Tests (Note 9) All Delta Parameters Listed in the Delta Tests and Limits Table All Delta Parameters Listed in the Delta Tests and Limits Table Steady State Reverse Bias (Drain Stress) MIL-STD-750 MIL-STD-750, Method 1042, Condition A VDS = 80% of Rated Value, TA = 150oC, Time = 160 hours MIL-STD-750 MIL-STD-750, Method 1042, Condition A VDS = 80% of Rated Value, TA = 150oC, Time = 240 hours PDA 10% 5% Final Electrical Tests (Note 9) MIL-S-19500 MIL-S-19500, Group A, Subgroup 2 MIL-S-19500 MIL-S-19500, Group A, Subgroups 2 and 3 NOTE: 9. Test limits are identical pre and post burn-in. Additional Screening Tests PARAMETER Safe Operating Area Unclamped Inductive Switching SYMBOL SOA IAS TEST CONDITIONS VDS = -160V -160V, t = 10ms VGS(PEAK) = -15V, L = 0.1mH MAX UNITS 0.71 A 9 A Thermal Response VSD tH = 100ms; VH = -25V; IH = 1A 125 mV Thermal Impedance VSD tH = 500ms; VH = -25V; IH = 1A 250 mV ©2001 Fairchild Semiconductor Corporation FSL9230D FSL9230D, FSL9230R FSL9230R Rev. A FSL9230D FSL9230D, FSL9230R FSL9230R Rad Hard Data Packages - Intersil Power Transistors TXV Equivalent C. Preconditioning - Attributes Data Sheet E. Preconditioning Attributes Data Sheet Hi-Rel Lot Traveler HTRB - Hi Temp Gate Stress Post Reverse Bias Data and Delta Data HTRB - Hi Temp Drain Stress Post Reverse Bias Delta Data D. Group A - Attributes Data Sheet F. Group A E. Group B - Attributes Data Sheet G. Group B - Attributes Data Sheet F. Group C - Attributes Data Sheet H. Group C - Attributes Data Sheet G. Group D - Attributes Data Sheet I. Group D - Attributes Data Sheet 1. Rad Hard TXV Equivalent - Standard Data Package A. Certificate of Compliance B. Assembly Flow Chart 2. Rad Hard TXV Equivalent - Optional Data Package A. Certificate of Compliance - Attributes Data Sheet 2. Rad Hard Max. "S" Equivalent - Optional Data Package A. Certificate of Compliance B. Assembly Flow Chart B. Serialization Records C. Preconditioning - Attributes Data Sheet - Precondition Lot Traveler - Pre and Post Burn-In Read and Record Data C. Assembly Flow Chart D. Group A - Attributes Data Sheet - Group A Lot Traveler E. Group B - Attributes Data Sheet - Group B Lot Traveler - Pre and Post Read and Record Data for Intermittent Operating Life (Subgroup B3) - Bond Strength Data (Subgroup B3) - Pre and Post High Temperature Operating Life Read and Record Data (Subgroup B6) F. Group C G. Group D - Attributes Data Sheet - Group C Lot Traveler - Pre and Post Read and Record Data for Intermittent Operating Life (Subgroup C6) - Bond Strength Data (Subgroup C6) - Attributes Data Sheet - Group D Lot Traveler - Pre and Post RAD Read and Record Data D. SEM Photos and Report E. Preconditioning - Attributes Data Sheet - Hi-Rel Lot Traveler - HTRB - Hi Temp Gate Stress Post Reverse Bias Data and Delta Data - HTRB - Hi Temp Drain Stress Post Reverse Bias Delta Data - X-Ray and X-Ray Report F. Group A - Attributes Data Sheet - Hi-Rel Lot Traveler - Subgroups A2, A3, A4, A5 and A7 Data G. Group B - Attributes Data Sheet - Hi-Rel Lot Traveler - Subgroups B1, B3, B4, B5 and B6 Data H. Group C - Attributes Data Sheet - Hi-Rel Lot Traveler - Subgroups C1, C2, C3 and C6 Data I. Group D - Attributes Data Sheet - Hi-Rel Lot Traveler - Pre and Post Radiation Data Class S - Equivalents 1. Rad Hard "S" Equivalent - Standard Data Package A. Certificate of Compliance B. Serialization Records C. Assembly Flow Chart D. SEM Photos and Report ©2001 Fairchild Semiconductor Corporation FSL9230D FSL9230D, FSL9230R FSL9230R Rev. A FSL9230D FSL9230D, FSL9230R FSL9230R TO-205AF 3 LEAD JEDEC TO-205AF HERMETIC METAL CAN PACKAGE INCHES ØD ØD1 MILLIMETERS SYMBOL A h SEATING PLANE L Øb MIN MAX MIN MAX A 0.160 0.180 4.07 4.57 - Øb P NOTES 0.016 0.021 0.41 0.53 2, 3 - ØD 0.350 0.370 8.89 9.39 ØD1 0.315 0.335 8.01 8.50 - e 0.095 0.105 2.42 2.66 4 e1 2 e2 1 90o 4.83 5.33 4 0.105 2.42 2.66 4 0.010 0.020 0.26 0.50 - j 0.028 0.034 0.72 0.86 - 0.029 0.045 0.74 1.14 - 0.500 0.560 12.70 14.22 3 P k k L 3 45o j 0.210 0.095 h e1 0.190 e2 e 0.075 - 1.91 - 5 NOTES: 1. These dimensions are within allowable dimensions of Rev. E of JEDEC TO-205AF outline dated 11-82. 2. Lead dimension (without solder). 3. Solder coating may vary along lead length, add typically 0.002 inches (0.05mm) for solder coating. 4. Position of lead to be measured 0.100 inches (2.54mm) from bottom of seating plane. 5. This zone controlled for automatic handling. The variation in actual diameter within this zone shall not exceed 0.010 inches (0.254mm). 6. Lead no. 3 butt welded to stem base. 7. Controlling dimension: Inch. 8. Revision 3 dated 6-94. ©2001 Fairchild Semiconductor Corporation FSL9230D FSL9230D, FSL9230R FSL9230R Rev. A