FSF9150D FSF9150R -100V MIL-S-19500 TA17756 MIL-STD-750

FSF9150D, FSF9150R Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs June 1997 Features Package · 22A, -100V,

S E M I C O N D U C T O R FSF9150D FSF9150D, FSF9150R FSF9150R Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs June 1997 Features Package · 22A, -100V -100V, rDS(ON) = 0.140 · Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) · Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias · Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM · Photo Current - 7.0nA Per-RAD(Si)/s Typically · Neutron - Maintain Pre-RAD Specifications for 3E13 Neutrons/cm2 - Usable to 3E14 Neutrons/cm2 TO-254AA G S D Description The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed. CAUTION: Beryllia Warning per MIL-S-19500 MIL-S-19500 refer to package specifications. Symbol D The Harris portfolio of SEGR resistant radiation hardened MOSFETs includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings. Numerous packaging options are also available. G This MOSFET is an enhancement-mode silicon-gate power field-effect transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to be radiation tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switching regulation, switching converters, motor drives, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits. S Reliability screening is available as either commercial, TXV equivalent of MIL-S-19500 MIL-S-19500, or Space equivalent of MIL-S-19500 MIL-S-19500. Contact Harris Semiconductor for any desired deviations from the data sheet. FORMERLY AVAILABLE AS TYPE TA17756 TA17756 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain-Gate Voltage (RGS = 20k) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR Continuous Drain Current TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT Derated Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulsed Avalanche Current, L = 100µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . .IAS Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IS Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL (Distance >0.063 in. (1.6mm) from Case, 10s Max) FSF9150D FSF9150D, FSF9150R FSF9150R -100 -100 UNITS V V 22 14 66 ±20 A A A V 125 50 1.00 66 22 66 -55 to 150 300 W W W/oC A A A oC oC CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures. Copyright © Harris Corporation 1997 1 File Number 4089.1 FSF9150D FSF9150D, FSF9150R FSF9150R Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS -100 - - V TC = -55oC - - -7.0 V TC = 25oC -2.0 - -6.0 V TC = 125oC -1.0 - - V TC = 25oC - - 25 µA TC = 125oC - - 250 µA TC = 25oC - - 100 nA TC = 125oC - - 200 nA - - -3.23 V TC = 25oC - 0.090 0.140 TC = 125oC - - 0.217 - - 110 ns - - 390 ns td(OFF) - - 300 ns tf - - 170 ns - - 240 nC Drain-Source Breakdown Voltage BVDSS ID = 1mA, VGS = 0V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 1mA Zero Gate Voltage Drain Current IDSS Gate-Source Leakage Current IGSS VDS = -80V, VGS = 0V VGS = ±20V Drain-Source On-State Voltage VDS(ON) VGS = -12V, ID = 22A On Resistance rDS(ON)12 ID = 14A, VGS = -12V Turn-On Delay Time td(ON) Rise Time tr Turn-Off Delay Time Fall Time VDD = -50V, ID = 22A, RL = 2.27, VGS = -12V, RGS = 4.7 Qg(TOT) VGS = 0V to -20V Gate Charge at 12V Qg(12) VGS = 0V to -12V - 130 160 nC Threshold Gate Charge Qg(TH) VGS = 0V to -2V - - 9.5 nC Total Gate Charge VDD = -50, ID = 22A Gate Charge Source Qgs - 21 29 nC Gate Charge Drain Qgd - 51 65 nC V(PLATEAU) ID = 22A, VDS = -15V - -6 - V Input Capacitance CISS VDS = -25V, VGS = 0V, f = 1MHz - 3500 - pF Output Capacitance COSS - 1000 - pF Reverse Transfer Capacitance CRSS - 300 - pF Thermal Resistance Junction to Case RJC - - 1.0 oC/W Thermal Resistance Junction to Ambient RJA - - 48 oC/W Plateau Voltage Source-Drain Diode Specifications PARAMETER Forward Voltage Reverse Recovery Time SYMBOL VSD trr TEST CONDITIONS ISD = 22A, dISD/dt = 100A/µs 2 TYP MAX UNITS -0.6 ISD = 22A MIN - -1.8 V - - 270 ns FSF9150D FSF9150D, FSF9150R FSF9150R Electrical Specifications up to 100K RAD TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN MAX UNITS Drain-Source Breakdown Volts (Note 3) BVDSS VGS = 0, ID = 1mA -100 - V Gate-Source Threshold Volts (Note 3) VGS(TH) VGS = VDS, ID = 1mA -2.0 -6.0 V Gate-Body Leakage (Notes 2, 3) IGSS VGS = ±20V, VDS = 0V - 100 nA Zero-Gate Leakage (Note 3) IDSS VGS = 0, VDS = -80V - 25 µA Drain-Source On-State Volts (Notes 1, 3) VDS(ON) VGS = -12V, ID = 22A - -3.23 V Drain-Source On Resistance (Notes 1, 3) rDS(ON)12 VGS = -12V, ID = 14A - 0.140 NOTES: 1. Pulse test, 300µs max. 2. Absolute value. 3. Insitu Gamma bias must be sampled for both VGS = -12V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS . Single Event Effects (SEB, SEGR) (Note 1) ENVIRONMENT (NOTE 2) (NOTE 3) MAXIMUM VDS BIAS (V) SYMBOL TYPICAL LET (MeV/mg/cm) TYPICAL RANGE (µ) Ni 26 43 20 -100 Br 37 36 10 -100 Br 37 36 15 -80 Br Single Event Effects Safe Operating Area ION SPECIES SEESOA TEST APPLIED VGS BIAS (V) 37 36 20 -50 NOTES: 1. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN. 2. Fluence = 1E5 ions/cm2 (typical), T = 25oC. 3. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). Performance Curves LET = 26MeV/mg/cm2, RANGE = 43µ LET = 37MeV/mg/cm2, RANGE = 36µ -120 1E-3 LIMITING INDUCTANCE (HENRY) FLUENCE = 1E5 IONS/cm2 (TYPICAL) -100 VDS (V) -80 -60 -40 -20 1E-4 ILM = 10A 30A 1E-5 100A 300A 1E-6 TEMP = 25oC 1E-7 -10 0 0 5 10 15 20 25 -30 -100 -300 -1000 DRAIN SUPPLY (V) VGS (V) FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA FIGURE 2. TYPICAL DRAIN INDUCTANCE REQUIRED TO LIMIT GAMMA DOT CURRENT TO IAS 3 FSF9150D FSF9150D, FSF9150R FSF9150R Performance Curves (Continued) TC = 25oC 24 100 100µs ID , DRAIN CURRENT (A) ID , DRAIN (A) 20 16 12 8 10ms 100ms 1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 4 0 -50 0 50 100 TC , CASE TEMPERATURE 1ms 10 0.1 -1 150 -10 VDS , DRAIN-TO-SOURCE VOLTAGE (V) (oC) FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs TEMPERATURE -100 FIGURE 4. SAFE OPERATING CURVE 2.5 PULSE DURATION = 250ms,VGS = -12V, ID = 14A NORMALIZED rDS(ON) 2.0 QG -12V QGD QGS VG 1.5 1.0 0.5 0.0 -80 CHARGE 0 -40 40 80 120 TJ , JUNCTION TEMPERATURE FIGURE 5. BASIC GATE CHARGE WAVEFORM FIGURE 6. NORMALIZED rDS(ON) vs JUNCTION TEMPERATURE NORMALIZED THERMAL RESPONSE (ZJC) 10 1 0.5 0.1 0.01 0.001 10-5 0.2 0.1 0.05 0.02 0.01 PDM SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC + TC 10-4 160 (oC) 10-3 10-2 t1 t2 10-1 100 t, RECTANGULAR PULSE DURATION (s) FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE 4 101 FSF9150D FSF9150D, FSF9150R FSF9150R Performance Curves (Continued) IAS , AVALANCHE CURRENT (A) 100 STARTING TJ = 25oC STARTING TJ = 150oC 10 IF R = 0 tAV = (L) (IAS) / (1.3 RATED BVDSS - VDD) IF R 0 tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1] 1 0.1 1 tAV , TIME IN AVALANCHE (ms) 10 FIGURE 8. UNCLAMPED INDUCTIVE SWITCHING Test Circuits and Waveforms ELECTRONIC SWITCH OPENS WHEN IAS IS REACHED VDS L BVDSS + CURRENT I TRANSFORMER AS tP - VARY tP TO OBTAIN REQUIRED PEAK IAS 0V VDS IAS VDD + 50 - tP VDD 50V-150V DUT 50 VGS 20V tAV FIGURE 9. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 10. UNCLAMPED ENERGY WAVEFORMS tON VDD tOFF td(ON) td(OFF) tr RL VDS tf 90% 90% VDS 0V 10% DUT VGS = -12V 10% 90% RGS 50% VGS 50% PULSE WIDTH 10% FIGURE 11. RESISTIVE SWITCHING TEST CIRCUIT FIGURE 12. RESISTIVE SWITCHING WAVEFORMS 5 FSF9150D FSF9150D, FSF9150R FSF9150R Screening Information Screening is performed in accordance with the latest revision in effect of MIL-S-19500 MIL-S-19500, (Screening Information Table). Delta Tests and Limits (JANTXV Equivalent, JANS Equivalent) TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MAX UNITS Gate-Source Leakage Current IGSS VGS = ±20V ±20 (Note 1) nA Zero Gate Voltage Drain Current IDSS VDS = 80% Rated Value ±25 (Note 1) µA On Resistance rDS(ON) TC = 125oC at Rated ID ±20% (Note 2) Gate Threshold Voltage VGS(TH) ID = 1.0mA ±20% (Note 2) V NOTES: 1. Or 100% of initial reading (whichever is greater). 2. Of initial reading. Screening Information TEST JANTXV EQUIVALENT JANS EQUIVALENT Gate Stress VGS = -30V, t = 250µs VGS = -30V, t = 250µs Pind Optional Required PDA 10% 5% Pre Burn-In Tests (Note 1) MIL-S-19500 MIL-S-19500 Group A, Subgroup 2 (All Static Tests at 25oC) MIL-S-19500 MIL-S-19500 Group A, Subgroup 2 (All Static Tests at 25oC) Steady State Gate Bias (Gate Stress) MIL-STD-750 MIL-STD-750, Method 1042, Condition B VGS = 80% of Rated Value, TA = 150oC, Time = 48 hours MIL-STD-750 MIL-STD-750, Method 1042, Condition B VGS = 80% of Rated Value, TA = 150oC, Time = 48 hours Interim Electrical Tests (Note 1) All Delta Parameters Listed in the Delta Tests and Limits Table All Delta Parameters Listed in the Delta Tests and Limits Table Steady State Reverse Bias (Drain Stress) MIL-STD-750 MIL-STD-750, Method 1042, Condition A VDS = 80% of Rated Value, TA = 150oC, Time = 160 hours MIL-STD-750 MIL-STD-750, Method 1042, Condition A VDS = 80% of Rated Value, TA = 150oC, Time = 240 hours Final Electrical Tests (Note 1) MIL-S-19500 MIL-S-19500, Group A, Subgroup 2 MIL-S-19500 MIL-S-19500, Group A, Subgroups 2 and 3 NOTE: 1. Test limits are identical pre and post burn-in. Additional Screening Tests PARAMETER Safe Operating Area Unclamped Inductive Switching SYMBOL SOA IAS TEST CONDITIONS MAX UNITS VDS = -80V, t = 10ms 5.8 A VGS(PEAK) = -15V, L = 0.1mH 66 A Thermal Response VSD tH = 100ms; VH = -25V; IH = 4A 136 mV Thermal Impedance VSD tH = 500ms; VH = -25V; IH = 4A 187 mV 6 FSF9150D FSF9150D, FSF9150R FSF9150R Rad Hard Data Packages - Harris Power Transistors TXV Equivalent Class S - Equivalents 1. Rad Hard TXV Equivalent - Standard Data Package 1. Rad Hard "S" Equivalent - Standard Data Package A. Certificate of Compliance A. Certificate of Compliance B. Assembly Flow Chart B. Serialization Records C. Preconditioning - Attributes Data Sheet C. Assembly Flow Chart D. Group A - Attributes Data Sheet D. SEM Photos and Report E. Group B - Attributes Data Sheet F. Group C - Attributes Data Sheet G. Group D - Attributes Data Sheet E. Preconditioning - Attributes Data Sheet - Hi-Rel Lot Traveler - HTRB - Hi Temp Gate Stress Post Reverse Bias Data and Delta Data - HTRB - Hi Temp Drain Stress Post Reverse Bias Delta Data 2. Rad Hard TXV Equivalent - Optional Data Package A. Certificate of Compliance B. Assembly Flow Chart F. Group A - Attributes Data Sheet C. Preconditioning - Attributes Data Sheet - Precondition Lot Traveler - Pre and Post Burn-In Read and Record Data G. Group B - Attributes Data Sheet D. Group A G. Group D - Attributes Data Sheet 2. Rad Hard Max. "S" Equivalent - Optional Data Package - Attributes Data Sheet - Group B Lot Traveler - Pre and Post Read and Record Data for Intermittent Operating Life (Subgroup B3) - Bond Strength Data (Subgroup B3) - Pre and Post High Temperature Operating Life Read and Record Data (Subgroup B6) F. Group C - Attributes Data Sheet I. Group D - Attributes Data Sheet - Group A Lot Traveler E. Group B H. Group C A. Certificate of Compliance B. Serialization Records C. Assembly Flow Chart D. SEM Photos and Report E. Preconditioning - Attributes Data Sheet - Hi-Rel Lot Traveler - HTRB - Hi Temp Gate Stress Post Reverse Bias Data and Delta Data - HTRB - Hi Temp Drain Stress Post Reverse Bias Delta Data - X-Ray and X-Ray Report - Attributes Data Sheet - Group C Lot Traveler - Pre and Post Read and Record Data for Intermittent Operating Life (Subgroup C6) - Bond Strength Data (Subgroup C6) F. Group A G. Group B - Attributes Data Sheet - Hi-Rel Lot Traveler - Subgroups B1, B3, B4, B5 and B6 Data H. Group C - Attributes Data Sheet - Group D Lot Traveler - Pre and Post RAD Read and Record Data - Attributes Data Sheet - Hi-Rel Lot Traveler - Subgroups A2, A3, A4, A5 and A7 Data - Attributes Data Sheet - Hi-Rel Lot Traveler - Subgroups C1, C2, C3 and C6 Data I. Group D 7 - Attributes Data Sheet - Hi-Rel Lot Traveler - Pre and Post Radiation Data