NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
FS30KMJ-06F - Datasheet Archive
FS30KMJ-06F HIGH-SPEED SWITCHING USE FS30KMJ-06F OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ±
MITSUBISHI Nch POWER MOSFET FS30KMJ-06F FS30KMJ-06F HIGH-SPEED SWITCHING USE FS30KMJ-06F FS30KMJ-06F OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 2.6 ± 0.2 ¡4V DRIVE ¡VDSS . 60V ¡rDS (ON) (MAX) . 22m ¡ID . 30A ¡Integrated Fast Recovery Diode (TYP.) . 50ns 0.75 ± 0.15 2.54 ± 0.25 4.5 ± 0.2 2.54 ± 0.25 GATE DRAIN SOURCE TO-220FN APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol (Tc = 25°C) Ratings Unit VDSS Drain-source voltage VGS = 0V 60 V VGSS ID IDM IDA IS Gate-source voltage Drain current Drain current (Pulsed) Avalanche current (Pulsed) Source current VDS = 0V ISM PD Tch Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature ±20 30 120 30 30 120 V A A A A A 25 55 ~ +150 55 ~ +150 W °C °C 2000 2.0 V g Tstg Viso - Parameter Isolation voltage Weight Conditions L = 10µH AC for 1 minute, Terminal to case Typical value Mar. 2002 MITSUBISHI Nch POWER MOSFET FS30KMJ-06F FS30KMJ-06F HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol Parameter V (BR) DSS Drain-source breakdown voltage V (BR) GSS IDSS Gate-source breakdown voltage Drain-source leakage current Gate-source leakage current IGSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time tf VSD Turn-off delay time Fall time Source-drain voltage Rth (ch-c) trr Thermal resistance Reverse recovery time Test conditions Limits Unit Min. Typ. Max. ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V VDS = 60V, VGS = 0V 60 ±20 - - - - - - 100 V V µA VGS = ±20V, VDS = 0V ID = 1mA, VDS = 10V ID = 15A, VGS = 10V ID = 15A, VGS = 4V ID = 15A, VGS = 10V - 1.0 - - - 1.5 18 22 ±10 2.0 22 28 µA V m m - - - - 0.27 38 2600 385 0.33 - - - V S pF pF - - - - 200 13 70 240 - - - - pF ns ns ns - 100 - ns - - - 1.0 - 50 1.5 5.00 - V °C/W ns ID = 15A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz VDD = 30V, ID = 15A, VGS = 10V, RGEN = RGS = 50 IS = 15A, VGS = 0V Channel to case IS = 30A, dis/dt = 100A/µs Mar. 2002