FS10KM-10 - Datasheet Archive

 

FS10KM-10 HIGH-SPEED SWITCHING USE FS10KM-10 OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2

 

MITSUBISHI Nch POWER MOSFET FS10KM-10 FS10KM-10 HIGH-SPEED SWITCHING USE FS10KM-10 FS10KM-10 OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 w 2.6 ± 0.2 1 2 3 ¡VDSS . 500V ¡rDS (ON) (MAX) . 0.90 ¡ID . 10A ¡Viso . 2000V 0.75 ± 0.15 2.54 ± 0.25 4.5 ± 0.2 2.54 ± 0.25 q GATE w DRAIN e SOURCE q e TO-220FN APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc. MAXIMUM RATINGS Symbol (Tc = 25°C) Parameter VDSS VGSS ID Drain-source voltage Gate-source voltage Drain current IDM PD Tch Tstg Viso Conditions Drain current (Pulsed) Maximum power dissipation Channel temperature - Storage temperature Isolation voltage Weight VGS = 0V VDS = 0V AC for 1minute, Terminal to case Typical value Ratings Unit 500 ±30 10 V V A 30 35 ­55 ~ +150 ­55 ~ +150 2000 A W °C °C Vrms 2.0 g Feb.1999 MITSUBISHI Nch POWER MOSFET FS10KM-10 FS10KM-10 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol Parameter V (BR) DSS Drain-source breakdown voltage Gate-source breakdown voltage ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Limits VGS = ±25V, VDS = 0V VDS = 500V, VGS = 0V ID = 1mA, VDS = 10V ID = 5A, VGS = 10V ID = 5A, VGS = 10V V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Test conditions Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage - - ±10 V V µA - 3 0.70 3.5 1 4 0.90 4.5 mA V V 5.5 1100 135 20 - - - - S pF pF pF - - - - 20 30 95 35 - - - - ns ns ns ns - 1.5 2.0 V - VDD = 200V, ID = 5A, VGS = 10V, RGEN = RGS = 50 - - - 3.3 - - - VDS = 25V, VGS = 0V, f = 1MHz Max. - 2 - - ID = 5A, VDS = 10V Typ. 500 ±30 - IS = 5A, VGS = 0V Channel to case Thermal resistance Unit Min. - 3.57 °C/W PERFORMANCE CURVES 40 30 20 10 0 MAXIMUM SAFE OPERATING AREA 5 3 2 DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 50 0 50 100 150 101 7 5 3 2 100µs 1ms 100 7 5 3 2 10­1 7 5 200 tw=10µs 10ms TC = 25°C Single Pulse DC 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 CASE TEMPERATURE TC (°C) 6V 12 8 4 5V 0 10 20 30 40 50 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) TC = 25°C Pulse Test 16 0 OUTPUT CHARACTERISTICS (TYPICAL) VGS=20V 10 10V PD= 6V 8V 35W OUTPUT CHARACTERISTICS (TYPICAL) VGS = 20V 10V PD = 35W 8V 20 DRAIN CURRENT ID (A) DRAIN-SOURCE VOLTAGE VDS (V) 8 TC = 25°C Pulse Test 6 4 5V 2 0 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS10KM-10 FS10KM-10 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 2.0 TC = 25°C Pulse Test 32 24 ID = 15A 16 10A 8 5A 0 0 4 8 12 16 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) () DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 40 TC = 25°C Pulse Test 1.6 VGS = 10V 20V 1.2 0.8 0.4 0 10­1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 20 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) TRANSFER CHARACTERISTICS (TYPICAL) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 101 7 5 TC = 25°C VDS = 50V Pulse Test 16 FORWARD TRANSFER ADMITTANCE yfs (S) DRAIN CURRENT ID (A) 20 12 8 4 0 0 4 8 12 16 VDS = 10V Pulse Test 75°C 3 2 150°C 100 7 5 3 2 10­1 ­1 10 20 TC=25°C 2 3 5 7 100 2 3 5 7 101 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 103 7 5 Ciss 3 2 102 7 5 3 2 Coss Crss 101 Tch = 25°C 7 f = 1MHz 5 VGS = 0V 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) 2 Tch = 25°C VDD = 200V VGS = 10V RGEN = RGS = 50 3 2 102 7 5 td(off) 3 2 tr td(on) 101 10­1 tf 2 3 5 7 100 2 3 5 7 101 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS10KM-10 FS10KM-10 HIGH-SPEED SWITCHING USE GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 40 Tch = 25°C ID = 10A SOURCE CURRENT IS (A) GATE-SOURCE VOLTAGE VGS (V) 20 16 VDS = 100V 200V 12 400V 8 4 0 0 20 40 60 80 32 TC=125°C 24 25°C 16 75°C 8 0 100 VGS = 0V Pulse Test 0 0.8 1.6 2.4 3.2 4.0 ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 VGS = 10V ID = 1/2ID Pulse Test GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) 101 7 5 SOURCE-DRAIN VOLTAGE VSD (V) 3 2 100 7 5 3 2 10­1 ­50 0 50 100 CHANNEL TEMPERATURE Tch (°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 0.4 ­50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) VDS = 10V ID = 1mA 4.0 3.0 2.0 1.0 0 150 ­50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) TRANSIENT THERMAL IMPEDANCE Zth (ch­c) (°C/W) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE VBR (DSS) (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE VBR (DSS) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) GATE CHARGE Qg (nC) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 D=1 3 2 0.5 100 7 5 3 2 10­1 7 5 3 2 0.2 0.1 PDM 0.05 0.02 0.01 tw T Single Pulse D= tw T 10­2 10­4 2 3 5710­3 2 3 5710­22 3 5710­12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s) Feb.1999