NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| FQU11P06 | Fairchild Semiconductor | 60V P-Channel MOSFET |
9 pages, |
Original |  |
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| FQU11P06 | Fairchild Semiconductor | 60 V P-Channel MOSFET |
9 pages, |
Original | |
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| FQU11P06TU | Fairchild Semiconductor | 60V P-Channel QFET |
9 pages, |
Original | |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: QFET TM FQD11P06 FQD11P06 / FQU11P06 60V P-Channel MOSFET General Description Features These , Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current FQD11P06 FQD11P06 / FQU11P06 -60 -9.4 , Fairchild Semiconductor International Rev. A3, January 2001 FQD11P06 FQD11P06 / FQU11P06 January 2001 , Fairchild Semiconductor International Rev. A3, January 2001 FQD11P06 FQD11P06 / FQU11P06 Elerical Characteristics FQD11P06 FQD11P06 / FQU11P06 Typical Characteristics VGS - 15.0 V - 10.0 V - 8.0 V - 7.0 V - ... | Original |
9 pages, |
FQU11P06 FQD11P06 FQU11P06 equivalent FQD11P06 abstract |
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| Abstract: TM FQD11P06 FQD11P06 / FQU11P06 60V P-Channel MOSFET General Description Features These P-Channel , Voltage - Continuous (TC = 25°C) Drain Current FQD11P06 FQD11P06 / FQU11P06 -60 -9.4 IDM Drain Current , Rev. B4, October 2002 FQD11P06 FQD11P06 / FQU11P06 QFET Symbol TC = 25°C unless otherwise noted , Rev. B4, October 2002 FQD11P06 FQD11P06 / FQU11P06 Elerical Characteristics FQD11P06 FQD11P06 / FQU11P06 , , (Normalized) Drain-Source Breakdown Voltage FQD11P06 FQD11P06 / FQU11P06 Typical Characteristics 1.0 % ... | Original |
9 pages, |
mosfet b4 FQU11P06 FQD11P06 FQD11P06 abstract |
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| Abstract: QFET TM FQD11P06 FQD11P06 / FQU11P06 60V P-Channel MOSFET General Description Features These , Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current FQD11P06 FQD11P06 / FQU11P06 -60 -9.4 , Fairchild Semiconductor Corporation Rev. A4. May 2001 FQD11P06 FQD11P06 / FQU11P06 May 2001 Symbol TC , Semiconductor Corporation Rev. A4. May 2001 FQD11P06 FQD11P06 / FQU11P06 Elerical Characteristics FQD11P06 FQD11P06 / FQU11P06 Typical Characteristics VGS - 15.0 V - 10.0 V - 8.0 V - 7.0 V - 6.0 V - 5.5 V - 5.0 V ... | Original |
9 pages, |
Fqu11p06 N FQD11P06 FAIRCHILD FQD DPAK fqu11p06 FQU11P06 equivalent FQU11P06 FQD11P06 abstract |
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| Abstract: ® FQD11P06 FQD11P06 / FQU11P06 60V P-Channel MOSFET General Description Features These P-Channel , - Continuous (TC = 25°C) Drain Current FQD11P06 FQD11P06 / FQU11P06 -60 -9.4 Drain Current VGSS , Rev. C4, August 2004 FQD11P06 FQD11P06 / FQU11P06 QFET Symbol TC = 25°C unless otherwise noted , FQD11P06 FQD11P06 / FQU11P06 Elerical Characteristics FQD11P06 FQD11P06 / FQU11P06 Typical Characteristics VGS , FQD11P06 FQD11P06 / FQU11P06 Typical Characteristics 1.1 1.0 Notes : 1. VGS = 0 V 2. ID = -250 uA ... | Original |
9 pages, |
FQU11P06 FQD11P06 FQD11P06 abstract |
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| Abstract: QFET ® FQD11P06 FQD11P06 / FQU11P06 60V P-Channel MOSFET General Description Features These , / FQU11P06 -60 -9.4 Drain Current VGSS Gate-Source Voltage EAS Single Pulsed Avalanche , / FQU11P06 January 2009 Symbol TC = 25°C unless otherwise noted Parameter Test Conditions , Fairchild Semiconductor Corporation Rev. C6,January 2009 FQD11P06 FQD11P06 / FQU11P06 Elerical Characteristics FQD11P06 FQD11P06 / FQU11P06 Typical Characteristics VGS - 15.0 V - 10.0 V - 8.0 V - 7.0 V - ... | Original |
9 pages, |
FQU11P06 equivalent FQU11P06 FQD11P06 FAIRCHILD FQD DPAK FQD11P06 abstract |
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| Abstract: -60 0.135 21 -10 -60 0.175 13 -10 FQU11P06 -60 0.185 13 -10 -60 0.41 6.3 -10 FQU7P06 FQU7P06 -60 0.45 6.3 -10 ... | Original |
3 pages, |
fairchild mosfet selection guide FQP27P06 FQA6N80 datasheet abstract |
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| Abstract: SFU9034 SFU9034 -60 Single 0.14 - - - 30 14 49 FQU11P06 -60 Single 0.185 ... | Original |
6 pages, |
SSU1N50A FDU6030BL FDU6512A FDU6612A FDU6644 FDU6680A FDU6692 FDU7030BL HUF75617D3 ISL9N306AD3 ISL9N308AD3 ISL9N312AD3 FDU3706 IRFU230A FDU3706 abstract |
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| Abstract: IRF1830 IRF1830G FQPF9N50 FQPF9N50 FQPF9N50C FQPF9N50C FQPF9N90C FQPF9N90C FQT13N06L FQT13N06L FQT4N20 FQT4N20 FQU11P06 STP3NK60ZFP STP3NK60ZFP STF3NK80Z STF3NK80Z STF3NK80Z STF3NK80Z ... | Original |
36 pages, |
AP85L02h 2sk3531 APM2054N equivalent 2sk2850 FQPF5N60C 2SK2837 equivalent 2SK3003 equivalent 2SK3679 AP70N03S 2SK3199 STK630F IRF1830G data sheet 2SK2696 STP16NF06 datasheet abstract |
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| Abstract: FQB46N15 irf630 IRF630B fqpf6n80 irf740 FQA90N08 FQPF6N80C FQP65N06 IRF650 SFU9034 SFU9034 -60 FQU11P06 -60 SFU9024 SFU9024 -60 SFU2955 SFU2955 -60 FQU7P06 FQU7P06 -60 SFU9014 SFU9014 -60 TO-252(DPAK ... | Original |
41 pages, |
FQB27P06 FQU11P06 equivalent FQP50N06 equivalent FDS4935 fdfs6n303 IRF840A china FDP2532 Complementary MOSFETs buz11 FDG329N FQD7P20 FLMP SuperSOT-6 datasheet abstract |
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| Abstract: irf740 fqpf6n80 irfs634a SSS7N60B sss3n90a IRFS630A SSP6N60A SFU9120 SFU9120 -100 FQU5P10 FQU5P10 -100 IRFU9110 IRFU9110 -100 SFU9110 SFU9110 -100 FQU17P06 FQU17P06 -60 SFU9034 SFU9034 -60 FQU11P06 -60 ... | Original |
45 pages, |
FDB6030L 1 N-Channel MOSFET fdfs6n303 FDG329N IRF630B irf630 FQD7P20 IRF634A SSP4N60A IRFP250 ssr2955 SSP7N60A IRF650 IRF540 mosfet with maximum VDS 12v datasheet abstract |
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| Fairchild Part | Orderable | Industry Part | Manufacturer | Type | Family | Description |
| FQU11P06 | FQU11P06TU Buy | 2SJ389(L) Buy | Hitachi | Close | Power MOSFET | 60V P-Channel QFET |
| FQU11P06 | FQU11P06 Buy | 2SJ529(L) Buy | Hitachi | Close | Power MOSFET | 60V P-Channel QFET |
| FQU11P06 | FQU11P06 Buy | 2SJ598 Buy | NEC | Close | Power MOSFET | 60V P-Channel QFET |
| FQU11P06 | FQU11P06TU Buy | 2SJ598-AY Buy | NEC | Close | Power MOSFET | 60V P-Channel QFET |
| On Semiconductor Part | Industry Part | Manufacturer | Type |
| NTD2955-1G Buy | FQU11P06 Buy | Fairchild Semiconductor | Close |
| NTD2955-1G Buy | FQU11P06TU Buy | Fairchild Semiconductor | Close |