NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS

Datasheet Archive - Datasheet Search Engine

 

FQU11P06 Datasheet

Part Manufacturer Description PDF Type Ordering
FQU11P06 Fairchild Semiconductor 60 V P-Channel MOSFET
ri

9 pages,
612.97 Kb

Original Buy
datasheet frame
FQU11P06 Fairchild Semiconductor 60V P-Channel MOSFET
ri

9 pages,
642.47 Kb

Original Buy
datasheet frame
FQU11P06TU Fairchild Semiconductor 60V P-Channel QFET
ri

9 pages,
632.32 Kb

Original Buy
datasheet frame

FQU11P06

Catalog Datasheet Results Type PDF Document Tags
Abstract: FQD11P06 FQD11P06 / FQU11P06 P-Channel MOSFET March 2013 P-Channel QFET MOSFET -60 V, -9.4 A, 185 m Description FQD11P06 FQD11P06 / FQU11P06 This P-Channel enhancement mode power MOSFET is produced using Fairchild , Current - Pulsed (Note 1) FQD11P06 FQD11P06 / FQU11P06 -60 -9.4 -5.95 -37.6 ± 30 (Note 2) (Note 1) (Note 1 , (PCB Mount) ©2000 Fairchild Semiconductor Corporation FQD11P06 FQD11P06 / FQU11P06 Rev. C0 www.fairchildsemi.com FQD11P06 FQD11P06 / FQU11P06 P-Channel MOSFET Elerical Characteristics Symbol Parameter TC = ... Original
datasheet

9 pages,
914.87 Kb

FQU11P06 FQD11P06 FQD11P06 abstract
datasheet frame
Abstract: QFET TM FQD11P06 FQD11P06 / FQU11P06 60V P-Channel MOSFET General Description Features These , Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current FQD11P06 FQD11P06 / FQU11P06 -60 -9.4 , Fairchild Semiconductor Corporation Rev. A4. May 2001 FQD11P06 FQD11P06 / FQU11P06 May 2001 Symbol TC , Semiconductor Corporation Rev. A4. May 2001 FQD11P06 FQD11P06 / FQU11P06 Elerical Characteristics FQD11P06 FQD11P06 / FQU11P06 Typical Characteristics VGS - 15.0 V - 10.0 V - 8.0 V - 7.0 V - 6.0 V - 5.5 V - 5.0 V ... Original
datasheet

9 pages,
642.47 Kb

Fqu11p06 N FQD11P06 FAIRCHILD FQD DPAK fqu11p06 FQU11P06 equivalent FQU11P06 FQD11P06 abstract
datasheet frame
Abstract: FQD11P06 FQD11P06 / FQU11P06 May 2000 QFET FQD11P06 FQD11P06 / FQU11P06 60V P-Channel MOSFET General , Current - Pulsed (Note 1) FQD11P06 FQD11P06 / FQU11P06 -60 -9.4 -5.95 -37.6 ± 25 (Note 2) (Note 1) (Note 1 , (PCB Mount) ©2000 Fairchild Semiconductor International Rev. A, May 2000 FQD11P06 FQD11P06 / FQU11P06 , Rev. A, May 2000 FQD11P06 FQD11P06 / FQU11P06 Typical Characteristics 10 1 -I D , Drain Current , FQD11P06 FQD11P06 / FQU11P06 Typical Characteristics (Continued) 1.2 2.5 -BV DSS , (Normalized ... Original
datasheet

9 pages,
632.28 Kb

FQD11P06 FQU11P06 FQD11P06 abstract
datasheet frame
Abstract: TM FQD11P06 FQD11P06 / FQU11P06 60V P-Channel MOSFET General Description Features These P-Channel , Voltage - Continuous (TC = 25°C) Drain Current FQD11P06 FQD11P06 / FQU11P06 -60 -9.4 IDM Drain Current , Rev. B4, October 2002 FQD11P06 FQD11P06 / FQU11P06 QFET Symbol TC = 25°C unless otherwise noted , Rev. B4, October 2002 FQD11P06 FQD11P06 / FQU11P06 Elerical Characteristics FQD11P06 FQD11P06 / FQU11P06 , , (Normalized) Drain-Source Breakdown Voltage FQD11P06 FQD11P06 / FQU11P06 Typical Characteristics 1.0 % ... Original
datasheet

9 pages,
612.97 Kb

mosfet b4 FQU11P06 FQD11P06 FQD11P06 abstract
datasheet frame
Abstract: ® FQD11P06 FQD11P06 / FQU11P06 60V P-Channel MOSFET General Description Features These P-Channel , - Continuous (TC = 25°C) Drain Current FQD11P06 FQD11P06 / FQU11P06 -60 -9.4 Drain Current VGSS , Rev. C4, August 2004 FQD11P06 FQD11P06 / FQU11P06 QFET Symbol TC = 25°C unless otherwise noted , FQD11P06 FQD11P06 / FQU11P06 Elerical Characteristics FQD11P06 FQD11P06 / FQU11P06 Typical Characteristics VGS , FQD11P06 FQD11P06 / FQU11P06 Typical Characteristics 1.1 1.0 Notes : 1. VGS = 0 V 2. ID = -250 µA ... Original
datasheet

9 pages,
632.32 Kb

FQD11P06 FQU11P06 FQD11P06 abstract
datasheet frame
Abstract: QFET TM FQD11P06 FQD11P06 / FQU11P06 60V P-Channel MOSFET General Description Features These , Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current FQD11P06 FQD11P06 / FQU11P06 -60 -9.4 , Fairchild Semiconductor International Rev. A3, January 2001 FQD11P06 FQD11P06 / FQU11P06 January 2001 , Fairchild Semiconductor International Rev. A3, January 2001 FQD11P06 FQD11P06 / FQU11P06 Elerical Characteristics FQD11P06 FQD11P06 / FQU11P06 Typical Characteristics VGS - 15.0 V - 10.0 V - 8.0 V - 7.0 V - ... Original
datasheet

9 pages,
624.03 Kb

FQU11P06 FQD11P06 FQU11P06 equivalent FQD11P06 abstract
datasheet frame
Abstract: Fairchild P/N FQU11P06 - 60V P-Channel QFET FQU11P06TU Full Production $0.461 TO-251(IPAK) 3 , FQD11P06 FQD11P06 / FQU11P06 May 2001 QFET FQD11P06 FQD11P06 / FQU11P06 60V P-Channel MOSFET General , Current - Pulsed (Note 1) FQD11P06 FQD11P06 / FQU11P06 -60 -9.4 -5.95 -37.6 ± 25 (Note 2) (Note 1) (Note 1 , (PCB Mount) ©2001 Fairchild Semiconductor Corporation Rev. A4. May 2001 FQD11P06 FQD11P06 / FQU11P06 , Rev. A4. May 2001 FQD11P06 FQD11P06 / FQU11P06 Typical Characteristics 10 1 -I D , Drain Current ... Original
datasheet

11 pages,
669.14 Kb

FQU11P06TU FQD11P06 FQU11P06 FQD11P06 abstract
datasheet frame
Abstract: FQD11P06 FQD11P06 / FQU11P06 October 2008 QFET ® FQD11P06 FQD11P06 / FQU11P06 60V P-Channel MOSFET , Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQD11P06 FQD11P06 / FQU11P06 -60 -9.4 -5.95 , , October 2008 FQD11P06 FQD11P06 / FQU11P06 Elerical Characteristics Symbol Parameter TC = 25°C unless , Semiconductor Corporation Rev. C5, October 2008 FQD11P06 FQD11P06 / FQU11P06 Typical Characteristics 10 1 , Corporation Rev. C5, October 2008 FQD11P06 FQD11P06 / FQU11P06 Typical Characteristics (Continued) 1.2 ... Original
datasheet

9 pages,
759 Kb

FQD11P06 FQU11P06 FQD11P06 abstract
datasheet frame
Abstract: QFET ® FQD11P06 FQD11P06 / FQU11P06 60V P-Channel MOSFET General Description Features These , / FQU11P06 -60 -9.4 Drain Current VGSS Gate-Source Voltage EAS Single Pulsed Avalanche , / FQU11P06 January 2009 Symbol TC = 25°C unless otherwise noted Parameter Test Conditions , Fairchild Semiconductor Corporation Rev. C6,January 2009 FQD11P06 FQD11P06 / FQU11P06 Elerical Characteristics FQD11P06 FQD11P06 / FQU11P06 Typical Characteristics VGS - 15.0 V - 10.0 V - 8.0 V - 7.0 V - ... Original
datasheet

9 pages,
807.94 Kb

FQU11P06 equivalent FQU11P06 FQD11P06 FAIRCHILD FQD DPAK FQD11P06 abstract
datasheet frame
Abstract: FQD11P06 FQD11P06 / FQU11P06 QFET FQD11P06 FQD11P06 / FQU11P06 60V P-Channel MOSFET General Description These , ) FQD11P06 FQD11P06 / FQU11P06 -60 -9.4 -5.95 -37.6 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A , Fairchild Semiconductor Corporation Rev. C4, August 2004 FQD11P06 FQD11P06 / FQU11P06 Elerical , FQD11P06 FQD11P06 / FQU11P06 Typical Characteristics 10 1 -ID , Drain Current [A] -ID, Drain Current , Characteristics ©2004 Fairchild Semiconductor Corporation Rev.C4, August 2004 FQD11P06 FQD11P06 / FQU11P06 ... Original
datasheet

11 pages,
770.25 Kb

FQU11P06 11p06 FQD11P06 FQD11P06 abstract
datasheet frame

Fairchild Cross Reference Results

Fairchild Part Orderable Industry Part Manufacturer Type Family Description
FQU11P06 FQU11P06TU Buy 2SJ389(L) Buy Hitachi Close Power MOSFET 60V P-Channel QFET
FQU11P06 FQU11P06 Buy 2SJ529(L) Buy Hitachi Close Power MOSFET 60V P-Channel QFET
FQU11P06 FQU11P06 Buy 2SJ598 Buy NEC Close Power MOSFET 60V P-Channel QFET
FQU11P06 FQU11P06TU Buy 2SJ598-AY Buy NEC Close Power MOSFET 60V P-Channel QFET

On Semiconductor Cross Reference Results

On Semiconductor Part Industry Part Manufacturer Type
NTD2955-1G Buy FQU11P06 Buy Fairchild Semiconductor Close
NTD2955-1G Buy FQU11P06TU Buy Fairchild Semiconductor Close