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Part Manufacturer Description Last Check Distributor Ordering
FQU11P06 Fairchild Semiconductor MOSFET, P CH,-60V,-9.4A, I-PAK 4,691 from $0.40 (Oct 2016) element14 Asia-Pacific Buy
FQU11P06 Fairchild Semiconductor MOSFET, P CH,-60V,-9.4A, I-PAK 4,840 from €0.4760 (Oct 2016) Farnell element14 Buy
FQU11P06 Fairchild Semiconductor P CHANNEL MOSFET, -60V, 9.4A, IPAK; Transistor Polarity:P Channel; Continuous Drain Current Id:9.4A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):185mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-4V; MSL:- ;RoHS Compliant: Yes 3,796 from $0.3160 (Oct 2016) Newark element14 Buy
FQU11P06TU Fairchild Semiconductor Trans MOSFET P-CH 60V 9.4A 3-Pin(3+Tab) IPAK Rail - Rail/Tube (Alt: FQU11P06TU) 4,425 from $0.4444 (Nov 2016) Avnet Buy
FQU11P06TU Fairchild Semiconductor Trans MOSFET P-CH 60V 9.4A 3-Pin(3+Tab) IPAK Rail 9,058 from $0.3020 (Aug 2016) Chip1Stop Buy
FQU11P06TU Fairchild Semiconductor MOSFET P-CH 60V 9.4A IPAK 2,458 from $0.3733 (Oct 2016) Digi-Key Buy
FQU11P06TU Fairchild Semiconductor MOSFET Operating temperature: -55...150 °C Housing type: IPAK Polarity: P Variants: Enhancement mode Power dissipation: 2.5 W 1,910 from €0.42 (Aug 2016) Distrelec Buy
FQU11P06TU Fairchild Semiconductor P CHANNEL MOSFET, -60V, 9.4A, IPAK 2,091 from $0.35 (Oct 2016) element14 Asia-Pacific Buy
FQU11P06TU Fairchild Semiconductor P CHANNEL MOSFET, -60V, 9.4A, IPAK 1,140 from €0.26 (Oct 2016) Farnell element14 Buy
FQU11P06TU Fairchild Semiconductor MOSFET 60V P-Channel QFET 4,453 from $0.2850 (Oct 2016) Mouser Electronics Buy
FQU11P06TU Fairchild Semiconductor P CHANNEL MOSFET, -60V, 9.4A, IPAK; Transistor Polarity:P Channel; Continuous Drain Current Id:-9.4A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):185mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-4V; MSL:- ;RoHS Compliant: Yes 1,134 from $0.2850 (Oct 2016) Newark element14 Buy
FQU11P06TU Fairchild Semiconductor N/A 11,731 from $0.37 (Nov 2016) Rochester Electronics Buy
FQU11P06TU Fairchild Semiconductor MOSFET P-Channel 60V 9.4A IPAK 539 (Nov 2016) RS Components Buy

FQU11P06 Datasheet

Part Manufacturer Description PDF Type Ordering
FQU11P06 Fairchild Semiconductor 60 V P-Channel MOSFET
ri

9 pages,
612.97 Kb

Original Buy
datasheet frame
FQU11P06 Fairchild Semiconductor 60V P-Channel MOSFET
ri

9 pages,
642.47 Kb

Original Buy
datasheet frame
FQU11P06TU Fairchild Semiconductor 60V P-Channel QFET
ri

9 pages,
632.32 Kb

Original Buy
datasheet frame

FQU11P06

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: FQD11P06 FQD11P06 / FQU11P06 P-Channel MOSFET March 2013 P-Channel QFET MOSFET -60 V, -9.4 A, 185 m Description FQD11P06 FQD11P06 / FQU11P06 This P-Channel enhancement mode power MOSFET is produced using Fairchild , Current - Pulsed (Note 1) FQD11P06 FQD11P06 / FQU11P06 -60 -9.4 -5.95 -37.6 ± 30 (Note 2) (Note 1) (Note 1 , Fairchild Semiconductor Corporation FQD11P06 FQD11P06 / FQU11P06 Rev. C0 www.fairchildsemi.com FQD11P06 FQD11P06 / FQU11P06 P-Channel MOSFET Elerical Characteristics Symbol Parameter TC = 25°C unless otherwise noted ... Fairchild Semiconductor
Original
datasheet

9 pages,
914.87 Kb

FQU11P06 FQD11P06 TEXT
datasheet frame
Abstract: Width 16 mm Quantity 2500 units FQU11P06TU FQU11P06 I-PAK Tube N/A N/A 70 , FQD11P06 FQD11P06 / FQU11P06 P-Channel QFET® MOSFET -60 V, -9.4 A, 185 mΩ Description Features , °C) Drain Current FQD11P06TM FQD11P06TM / FQU11P06TU -60 -9.4 Drain Current VGSS Gate-Source Voltage , seconds Thermal Characteristics Symbol RJC RJA Parameter FQD11P06TM FQD11P06TM / FQU11P06TU 3.28 , Fairchild Semiconductor Corporation FQD11P06 FQD11P06 / FQU11P06 Rev. C2 1 Unit 110 oC/W 50 ... Fairchild Semiconductor
Original
datasheet

9 pages,
1222.33 Kb

FQD11P06 FQU11P06 TEXT
datasheet frame
Abstract: FQD11P06 FQD11P06 / FQU11P06 October 2008 QFET ® FQD11P06 FQD11P06 / FQU11P06 60V P-Channel MOSFET , °C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQD11P06 FQD11P06 / FQU11P06 -60 -9.4 , , October 2008 FQD11P06 FQD11P06 / FQU11P06 Elerical Characteristics Symbol Parameter TC = 25°C unless , Semiconductor Corporation Rev. C5, October 2008 FQD11P06 FQD11P06 / FQU11P06 Typical Characteristics 10 1 , Corporation Rev. C5, October 2008 FQD11P06 FQD11P06 / FQU11P06 Typical Characteristics (Continued) 1.2 ... Fairchild Semiconductor
Original
datasheet

9 pages,
759 Kb

FQD11P06 FQU11P06 TEXT
datasheet frame
Abstract: FQD11P06 FQD11P06 / FQU11P06 May 2000 QFET FQD11P06 FQD11P06 / FQU11P06 60V P-Channel MOSFET General , Current - Pulsed (Note 1) FQD11P06 FQD11P06 / FQU11P06 -60 -9.4 -5.95 -37.6 ± 25 (Note 2) (Note 1) (Note 1 , Fairchild Semiconductor International Rev. A, May 2000 FQD11P06 FQD11P06 / FQU11P06 Elerical Characteristics , FQD11P06 FQD11P06 / FQU11P06 Typical Characteristics 10 1 -I D , Drain Current [A] -I D, Drain , Fairchild Semiconductor International Rev. A, May 2000 FQD11P06 FQD11P06 / FQU11P06 Typical Characteristics ... Fairchild Semiconductor
Original
datasheet

9 pages,
632.28 Kb

FQD11P06 FQU11P06 TEXT
datasheet frame
Abstract: TM FQD11P06 FQD11P06 / FQU11P06 60V P-Channel MOSFET General Description Features These P-Channel , Voltage - Continuous (TC = 25°C) Drain Current FQD11P06 FQD11P06 / FQU11P06 -60 -9.4 IDM Drain Current , Rev. B4, October 2002 FQD11P06 FQD11P06 / FQU11P06 QFET Symbol TC = 25°C unless otherwise noted , Rev. B4, October 2002 FQD11P06 FQD11P06 / FQU11P06 Elerical Characteristics FQD11P06 FQD11P06 / FQU11P06 , , (Normalized) Drain-Source Breakdown Voltage FQD11P06 FQD11P06 / FQU11P06 Typical Characteristics 1.0 % ... Fairchild Semiconductor
Original
datasheet

9 pages,
612.97 Kb

mosfet b4 FQU11P06 FQD11P06 TEXT
datasheet frame
Abstract: QFET TM FQD11P06 FQD11P06 / FQU11P06 60V P-Channel MOSFET General Description Features These , Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current FQD11P06 FQD11P06 / FQU11P06 -60 -9.4 , Fairchild Semiconductor International Rev. A3, January 2001 FQD11P06 FQD11P06 / FQU11P06 January 2001 , Fairchild Semiconductor International Rev. A3, January 2001 FQD11P06 FQD11P06 / FQU11P06 Elerical Characteristics FQD11P06 FQD11P06 / FQU11P06 Typical Characteristics VGS - 15.0 V - 10.0 V - 8.0 V - 7.0 V - ... Fairchild Semiconductor
Original
datasheet

9 pages,
624.03 Kb

FQU11P06 FQD11P06 FQU11P06 equivalent TEXT
datasheet frame
Abstract: FQD11P06 FQD11P06 / FQU11P06 May 2001 QFET FQD11P06 FQD11P06 / FQU11P06 60V P-Channel MOSFET General , Current - Pulsed (Note 1) FQD11P06 FQD11P06 / FQU11P06 -60 -9.4 -5.95 -37.6 ± 25 (Note 2) (Note 1) (Note 1 , Fairchild Semiconductor Corporation Rev. A4. May 2001 FQD11P06 FQD11P06 / FQU11P06 Elerical Characteristics , FQD11P06 FQD11P06 / FQU11P06 Typical Characteristics 10 1 -I D , Drain Current [A] -I D, Drain , Fairchild Semiconductor Corporation Rev. A4. May 2001 FQD11P06 FQD11P06 / FQU11P06 Typical Characteristics ... Fairchild Semiconductor
Original
datasheet

11 pages,
669.14 Kb

FQU11P06TU FQD11P06 FQU11P06 TEXT
datasheet frame
Abstract: QFET TM FQD11P06 FQD11P06 / FQU11P06 60V P-Channel MOSFET General Description Features These , Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current FQD11P06 FQD11P06 / FQU11P06 -60 -9.4 , Fairchild Semiconductor Corporation Rev. A4. May 2001 FQD11P06 FQD11P06 / FQU11P06 May 2001 Symbol TC , Semiconductor Corporation Rev. A4. May 2001 FQD11P06 FQD11P06 / FQU11P06 Elerical Characteristics FQD11P06 FQD11P06 / FQU11P06 Typical Characteristics VGS - 15.0 V - 10.0 V - 8.0 V - 7.0 V - 6.0 V - 5.5 V - 5.0 V ... Fairchild Semiconductor
Original
datasheet

9 pages,
642.47 Kb

Fqu11p06 N FQD11P06 FAIRCHILD FQD DPAK fqu11p06 FQU11P06 equivalent FQU11P06 TEXT
datasheet frame
Abstract: FQD11P06 FQD11P06 / FQU11P06 QFET FQD11P06 FQD11P06 / FQU11P06 60V P-Channel MOSFET General Description These , ) FQD11P06 FQD11P06 / FQU11P06 -60 -9.4 -5.95 -37.6 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A , Fairchild Semiconductor Corporation Rev. C4, August 2004 FQD11P06 FQD11P06 / FQU11P06 Elerical , FQD11P06 FQD11P06 / FQU11P06 Typical Characteristics 10 1 -ID , Drain Current [A] -ID, Drain Current , Characteristics ©2004 Fairchild Semiconductor Corporation Rev.C4, August 2004 FQD11P06 FQD11P06 / FQU11P06 ... Fairchild Semiconductor
Original
datasheet

11 pages,
770.25 Kb

FQU11P06 11p06 FQD11P06 TEXT
datasheet frame
Abstract: QFET ® FQD11P06 FQD11P06 / FQU11P06 60V P-Channel MOSFET General Description Features These , / FQU11P06 -60 -9.4 Drain Current VGSS Gate-Source Voltage EAS Single Pulsed Avalanche , / FQU11P06 January 2009 Symbol TC = 25°C unless otherwise noted Parameter Test Conditions , Fairchild Semiconductor Corporation Rev. C6,January 2009 FQD11P06 FQD11P06 / FQU11P06 Elerical Characteristics FQD11P06 FQD11P06 / FQU11P06 Typical Characteristics VGS - 15.0 V - 10.0 V - 8.0 V - 7.0 V - ... Fairchild Semiconductor
Original
datasheet

9 pages,
807.94 Kb

FQU11P06 equivalent FQU11P06 FQD11P06 FAIRCHILD FQD DPAK TEXT
datasheet frame
Abstract: ® FQD11P06 FQD11P06 / FQU11P06 60V P-Channel MOSFET General Description Features These P-Channel , - Continuous (TC = 25°C) Drain Current FQD11P06 FQD11P06 / FQU11P06 -60 -9.4 Drain Current VGSS , Rev. C4, August 2004 FQD11P06 FQD11P06 / FQU11P06 QFET Symbol TC = 25°C unless otherwise noted , FQD11P06 FQD11P06 / FQU11P06 Elerical Characteristics FQD11P06 FQD11P06 / FQU11P06 Typical Characteristics VGS , FQD11P06 FQD11P06 / FQU11P06 Typical Characteristics 1.1 1.0 Notes : 1. VGS = 0 V 2. ID = -250 uA ... Fairchild Semiconductor
Original
datasheet

9 pages,
632.32 Kb

FQD11P06 FQU11P06 TEXT
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On Semiconductor Cross Reference Results

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NTD2955-1G Buy FQU11P06 Buy Fairchild Semiconductor Close
NTD2955-1G Buy FQU11P06TU Buy Fairchild Semiconductor Close