FQP10N60C FQPF10N60C 95MAX 54TYP

® FQP10N60C / FQPF10N60C 600V N-Channel MOSFET Features Description · 9.5A, 600V, RDS(on) = 0.73 @VGS = 10 V These

QFET ® FQP10N60C FQP10N60C / FQPF10N60C FQPF10N60C 600V N-Channel MOSFET Features Description · 9.5A, 600V, RDS(on) = 0.73 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. · Low gate charge ( typical 44 nC) · Low Crss ( typical 18 pF) This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. · Fast switching · 100% avalanche tested · Improved dv/dt capability D G TO-220 G DS FQP Series TO-220F GD S FQPF Series S Absolute Maximum Ratings Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) IDM Drain Current - Pulsed FQP10N60C FQP10N60C FQPF10N60C FQPF10N60C 600 Units V 9.5 5.7 - Continuous (TC = 100°C) (Note 1) 9.5 * A 5.7 * A 38 38 * A ± 30 V 700 mJ VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche Current (Note 1) 9.5 A EAR Repetitive Avalanche Energy (Note 1) 15.6 mJ (Note 3) dv/dt Peak Diode Recovery dv/dt PD Power Dissipation (TC = 25°C) TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 4.5 156 - Derate above 25°C V/ns 50 0.4 1.25 W W/°C -55 to +150 °C 300 °C * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter FQP10N60C FQP10N60C FQPF10N60C FQPF10N60C Units 0.8 2.5 °C/W RJC Thermal Resistance, Junction-to-Case RCS Thermal Resistance, Case-to-Sink Typ. 0.5 - °C/W RJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W ©2005 Fairchild Semiconductor Corporation FQP10N60C FQP10N60C / FQPF10N60C FQPF10N60C Rev. C 1 www.fairchildsemi.com FQP10N60C FQP10N60C / FQPF10N60C FQPF10N60C 600V N-Channel MOSFET July 2005 Device Marking Device Package Reel Size Tape Width Quantity FQP10N60C FQP10N60C FQP10N60C FQP10N60C TO-220 - - 50 FQPF10N60C FQPF10N60C FQPF10N60C FQPF10N60C TO-220F - - 50 Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units 600 - - V - V/°C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA BVDSS/ TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C - 0.7 IDSS Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V - - 1 µA VDS = 480 V, TC = 125°C - - 10 µA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V - - 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V - - -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2.0 - 4.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 4.75 A - 0.6 0.73 W gFS Forward Transconductance VDS = 40 V, ID = 4.75 A - 8.0 - S (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz - 1570 2040 pF - 166 215 pF - 18 24 pF - 23 55 ns Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd VDD = 300 V, ID = 9.5A, RG = 25 Gate-Drain Charge - (Note 4, 5) ns 300 ns - 77 165 ns 44 57 nC - VDS = 480 V, ID = 9.5A, VGS = 10 V 150 144 - (Note 4, 5) 69 - 6.7 - nC - 18.5 - nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current - - 9.5 A ISM Maximum Pulsed Drain-Source Diode Forward Current - - 38 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 9.5 A - - 1.4 V trr Reverse Recovery Time - 420 - ns Qrr Reverse Recovery Charge VGS = 0 V, IS = 9.5 A, dIF / dt = 100 A/µs - 4.2 - µC (Note 4) Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 14.2mH, IAS = 9.5 A, VDD = 50V, RG = 25 , Starting TJ = 25°C 3. ISD 9.5A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width 300µs, Duty cycle 2% 5. Essentially independent of operating temperature FQP10N60C FQP10N60C / FQPF10N60C FQPF10N60C Rev. C 2 www.fairchildsemi.com FQP10N60C FQP10N60C / FQPF10N60C FQPF10N60C 600V N-Channel MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS Top : ID, Drain Current [A] 1 10 ID, Drain Current [A] 1 10 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V 0 10 -1 0 0 10 2. 250µs Pulse Test -1 10 2 1 10 -55°C 25°C * Notes : 1. VDS = 40V * Notes : 1. 250µs Pulse Test 2. TC = 25°C 10 150°C 10 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue IDR, Reverse Drain Current [A] RDS(ON) [], Drain-Source On-Resistance 2.0 1.5 VGS = 10V 1.0 VGS = 20V 0.5 0.0 1 10 0 10 150°C 2. 250µs Pulse Test -1 0 5 10 15 20 25 30 10 35 0.2 0.4 ID, Drain Current [A] 3000 0.6 0.8 1.4 12 Coss = Cds + Cgd Crss = Cgd VDS = 120V VGS, Gate-Source Voltage [V] 10 Ciss 2000 Coss 1500 1.2 Figure 6. Gate Charge Characteristics Ciss = Cgs + Cgd (Cds = shorted) 2500 1.0 VSD, Source-Drain voltage [V] Figure 5. Capacitance Characteristics Capacitance [pF] * Notes : 1. VGS = 0V 25°C * Note : TJ = 25°C * Notes ; 1. VGS = 0 V 1000 Crss 2. f = 1 MHz 500 VDS = 300V VDS = 480V 8 6 4 2 * Note : ID = 9.5A 0 -1 10 0 0 10 1 10 FQP10N60C FQP10N60C / FQPF10N60C FQPF10N60C Rev. C 0 10 20 30 40 50 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] 3 www.fairchildsemi.com FQP10N60C FQP10N60C / FQPF10N60C FQPF10N60C 600V N-Channel MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 * Notes : 1. VGS = 0 V 0.9 2. ID = 250µA 0.8 -100 -50 0 50 100 2.5 2.0 1.5 1.0 * Notes : 1. VGS = 10 V 0.5 2. ID = 4.75 A 150 0.0 -100 200 -50 0 50 100 150 200 TJ, Junction Temperature [°C] TJ, Junction Temperature [°C] Figure 9-1. Maximum Safe Operating Area for FQP10N60C FQP10N60C Figure 9-2. Maximum Safe Operating Area for FQPF10N60C FQPF10N60C 2 Operation in This Area is Limited by R DS(on) Operation in This Area is Limited by R DS(on) 2 10 10 µs 10 µs 100 µs 1 10 ID, Drain Current [A] ID, Drain Current [A] 10 1 ms 10 ms 100 ms DC 0 10 * Notes : 1. TC = 25°C 100 µs 1 10 1 ms 10 ms 100 ms DC 0 10 -1 * Notes : 1. TC = 25°C 10 2. TJ = 150°C 2. TJ = 150°C 3. Single Pulse 3. Single Pulse -1 10 -2 0 1 10 2 10 10 3 10 10 0 10 VDS, Drain-Source Voltage [V] 1 10 2 10 3 10 VDS, Drain-Source Voltage [V] Figure 10. Maximum Drain Current vs. Case Temperature 10 ID, Drain Current [A] 8 6 4 2 0 25 50 75 100 125 150 TC, Case Temperature [°C] FQP10N60C FQP10N60C / FQPF10N60C FQPF10N60C Rev. C 4 www.fairchildsemi.com FQP10N60C FQP10N60C / FQPF10N60C FQPF10N60C 600V N-Channel MOSFET Typical Performance Characteristics (Continued) FQP10N60C FQP10N60C / FQPF10N60C FQPF10N60C 600V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 11-1. Transient Thermal Response Curve for FQP10N60C FQP10N60C 0 10 0 .2 10 -1 Z * N o te s : 1 . Z J C ( t ) = 0 .8 ° C / W M a x . 0 .1 2 . D u ty F a c t o r , D = t 1 / t 2 3 . T JM - T C = P D M * Z JC (t) 0 .0 5 0 .0 2 PDM 0 .0 1 JC (t), Thermal Response D = 0 .5 10 10 t1 s in g le p u ls e -2 -5 10 -4 10 -3 10 -2 10 t2 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11-2. Transient Thermal Response Curve for FQPF10N60C FQPF10N60C D = 0 .5 0 0 .2 * N o te s : 1 . Z J C ( t ) = 2 . 5 ° C /W M a x . 0 .1 2 . D u ty F a c to r , D = t 1 / t 2 3 . T J M - T C = P D M * Z J C ( t) 0 .0 5 10 -1 0 .0 2 0 .0 1 PDM Z JC (t), Thermal Response 10 t1 s in g le p u ls e 10 t2 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a tio n [ s e c ] FQP10N60C FQP10N60C / FQPF10N60C FQPF10N60C Rev. C 5 www.fairchildsemi.com FQP10N60C FQP10N60C / FQPF10N60C FQPF10N60C 600V N-Channel MOSFET Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50K 200nF 12V Qg 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS RG RL VDS 90% VDD VGS VGS DUT 10V 10% td(on) tr td(off) t on tf t off Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = - L IAS2 -2 BVDSS - VDD L VDS BVDSS IAS ID RG VDD tp FQP10N60C FQP10N60C / FQPF10N60C FQPF10N60C Rev. C VDS (t) VDD DUT 10V ID (t) tp 6 Time www.fairchildsemi.com FQP10N60C FQP10N60C / FQPF10N60C FQPF10N60C 600V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD · dv/dt controlled by RG · ISD controlled by pulse period Gate Pulse Width D = -Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop FQP10N60C FQP10N60C / FQPF10N60C FQPF10N60C Rev. C 7 www.fairchildsemi.com TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 0.05 18.95MAX 95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 1.52 ±0.10 10.08 ±0.30 (1.00) 13.08 ±0.20 ) (45° 1.27 ±0.10 0.80 ±0.10 2.54TYP 54TYP [2.54 ±0.20] +0.10 0.50 0.05 2.40 ±0.20 2.54TYP 54TYP [2.54 ±0.20] 10.00 ±0.20 Dimensions in Millimeters FQP10N60C FQP10N60C / FQPF10N60C FQPF10N60C Rev. C 8 www.fairchildsemi.com FQP10N60C FQP10N60C / FQPF10N60C FQPF10N60C 600V N-Channel MOSFET Mechanical Dimensions (Continued) 3.30 ±0.10 TO-220F 10.16 ±0.20 2.54 ±0.20 ø3.18 ±0.10 (7.00) (1.00x45°) 15.87 ±0.20 15.80 ±0.20 6.68 ±0.20 (0.70) 0.80 ±0.10 ) 0° (3 9.75 ±0.30 MAX1.47 #1 +0.10 0.50 0.05 2.54TYP 54TYP [2.54 ±0.20] 2.76 ±0.20 2.54TYP 54TYP [2.54 ±0.20] 9.40 ±0.20 4.70 ±0.20 0.35 ±0.10 Dimensions in Millimeters FQP10N60C FQP10N60C / FQPF10N60C FQPF10N60C Rev. C 9 www.fairchildsemi.com FQP10N60C FQP10N60C / FQPF10N60C FQPF10N60C 600V N-Channel MOSFET Mechanical Dimensions The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I16 10 FQP10N60C FQP10N60C / FQPF10N60C FQPF10N60C Rev. C www.fairchildsemi.com FQP10N60C FQP10N60C / FQPF10N60C FQPF10N60C 600V N-Channel MOSFET TRADEMARKS