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FQP 07

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fusible resistors

Abstract: 2R20 FUSIBLE RESISTORS (FQP TYPE ) : : : FQP-01 : 2008.01.01 A 1/26 1. 2. 2.1 : , : () : FUSIBLE RESISTORS (FQP TYPE ) 01 : 1W 02 : 2W 03 : 3W 05 : 5W 07 : 7W 10 : 10W FQP 1W 5% FQP 01 J : ±5% G : ±2% F : ±1% J , ( 5% + 0.05) ± ( 5% + 0.05) ± ( 5% + 0.05) ± 300PPM FQP-07 7W 350V 500V 400V FQP-10 10W , 9.0± 1.5 0.75±0.1 30±3 FQP-07 7W 35.0±1.5 10.0± 1.5 9.0± 1.5 0.75±0.1 30±3
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FQP-03 fusible resistors 2R20 fusible 7W 1.8 ohm FQP-01 FQP-02 FQP-05 FQP-10
Abstract: : FQP SERIES POWER FUSIBLE RESISTORS (FQP TYPE ) 01 : 1W 02 : 2W 03 : 3W 05 : 5W 07 , -02 FQP-03 FQP-05 FQP-07 FQP-10 Power Rating at 70â"ƒ 1W 2W 3W 5W 7W 10W , 0.75±0.1 30±3 FQP-07 7W 35.0±1.5 10.0± 1.5 9.0± 1.5 0.75±0.1 30±3 FQP , SYNTON-TECH CORPORATION FUSIBLE WIRE WOUND RESISTORS CEMENT TYPE (FQP TYPE ) File No.: Version: Page: FQP-02 B 1/17 Date: 2012.05.25 1. INTRODUCTION Cement resistors are Synton-Tech
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Wire wound resistor 5W

Abstract: fusible resistor POWER FUSIBLE RESISTORS (FQP TYPE ) 01 : 1W 02 : 2W 03 : 3W 05 : 5W 07 : 7W 10 : 10W 200 , : 2008.01.01 4. ELECTRICAL CHARACTERISTICS TYPE FQP-01 FQP-02 FQP-03 FQP-05 FQP-07 FQP , 22.0±1.5 10.0± 1.5 9.0± 1.5 0.75±0.1 30±3 FQP-07 7W 35.0±1.5 10.0± 1.5 9.0± 1.5 , SYNTON-TECH CORPORATION FUSIBLE WIRE WOUND RESISTORS CEMENT TYPE (FQP TYPE ) File No.: Version: Page: FQP-02 A 1/26 Date: 2008.01.01 1. INTRODUCTION Cement resistors are
Synton-Tech
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Wire wound resistor 5W fusible resistor fusible fused resistor resistance fusible 10R0

6n60

Abstract: 6n60 data / 03 / 17 07:30 12,000 Weight per unit (gm) 590mm x 330mm x 245mm Outer box(8,000cap) 01 , ,000cap) FKS Label 3.0 ± 0.1 Note: All dimensions are in mm 7.7 ±0.2 FA0133 FQP 6N60 FA0133 FQP 6N60 FA0133 FQP 6N60 FA0133 FQP 6N60 FA0133 FQP 6N60 FA0133 FQP 6N60 FA0133 FQP 6N60 FA0133 FQP 6N60 FA0133 FQP 6N60 FA0133 FQP 6N60 FA0133 FQP 6N60 FA0133 FQP 6N60 33.0 ±0.2 0.6 +0.2 0.0 3.4 7.7 ±0.2 512.6 ± 1.0 ©2001 Fairchild
Fairchild Semiconductor
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6n60 6n60 data 6n60 equivalent imsys TO220 Semiconductor Packaging 6N60 datasheet TKLEE777 KA7812-AE IMSYS777 A710103105

9n90c

Abstract: 9n50c ± 12 ± 12 ± 12 ± 12 ± 12 ± 10 ± 12 0.7 -0.8 -0.6 (min) -0.8 -0.6 (min) -0.6 (min , ) KEC-H Corp. PKG Application Status E-Bike Car Booster '07. 02 '07. 05 DC-DC Con. '07. 02 66 First & Best Low Voltage MOS-FET Line up Plan ('07) First & Best BVDSS (V) RDS(ON , Corp. DC-DC (Low side) DC-DC '07. 01 load switch 77 First & Best Low Voltage MOS-FET Line up Plan ('07) First & Best BVDSS (V) ID (A) VGS (V) Vth (V) RDS(ON) Max (m
KEC
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9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c 2N7002 2N7002A 2N7002K KTX421U KTX321U 2N7000

TRANSISTER 431

Abstract: kss211 Current Idd 0.7 2.0 M Output Drive Current â'¢IL1 Rm = 200SÃ, Vdd = 1.2V 4.0 mA IL2 4.0 mA , Capacitance Cin 20 PF OSC Accuracy oâ'ž 0.7 2 sec/day GENERAL DESCRIPTION The KS5211 series is a CMOS , 4.31 2.92 3.43 0.51 1.02 , 3-43 0.51 TYP I! 0.56 1.02 48 FQP Unit: mm TYP 0.71 0.96 _0.10 rzi^aüüüaüüHüHüt^E^IP5 , 3.43 0.51 1.02 60 FQP Unit: mm 13.74 14.24 13.74 14.24 0.76 TYP 19.78 20.29 0.28 0.48 1.65
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KS5211A KS5211E KS5211F TRANSISTER 431 kss211 1.5v Quartz Clock 200S 768KH

KS5211E

Abstract: acr transister Symbol V dd Min 1.2 Typ 1.5 0.7 Max 1.8 2.0 Unit V /*A mA mA mA mA T" E 8 Il , V dd= 100mV 0.5 20 20 0.7 2 3.0 1.1 1.1 1 Rm = 1K, Vdd = 1.5V f*A V V ppm PF pF sec/day V , SAMSUNG SEMICONDUCTOR 0894 A " 07 255 SAMSUNG SEMICONDUCTOR INC DEE D 7U414E 0005055 , FQP 14.73 15.74 Unit: mm 60 FQP 13.74 14.24 Unit: mm 1111 14.73 15.74 9.75 10.25 13.74
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acr transister 08DIP DQDS71S

SAMSUNG CHIP CAPACITOR

Abstract: L4145 SEMICONDUCTOR 0894 A " 07 255 SAMSUNG SEMICONDUCTOR INC DEE D 7U414E 0005055 5 , SEMICONDUCTOR INC G2E D 7^4142 DDQ5flSb 7 PACKAGE DIMENSIONS T - ? o -ä ö 48 FQP 14.73 15.74 Unit: mm 60 FQP 13.74 14.24 Unit: mm 1111 14.73 15.74 9.75 10.25 13.74 14.24
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KS5311A SAMSUNG CHIP CAPACITOR L4145 ks531 74145 diagram KS5311

digital watch circuit

Abstract: ks531 .0 Vss+0.3 ~ Vdd - 0.7 -2 0 -+ 7 0 -5 5 -+ 1 2 5 Unit V V °c °c ELECTRICAL CHARACTERISTICS (Ta , A " 07 255 SAMSUNG SEMICONDUCTOR INC DEE D 7U414E 0005055 5 PACKAGE , SEMICONDUCTOR INC G2E D 7^4142 D D Q 5 flSb 7 PACKAGE DIMENSIONS T - ? o -ä ö 48 FQP 14.73 15.74 Unit: mm 60 FQP 13.74 14.24 Unit: mm 1111 14.73 15.74 9.75 10.25 13.74 14.24
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digital watch circuit KS5310

KS5814

Abstract: Sink Current Unit 0.4 200 210 100 / , " 07 0.56 1.02 255 SAMSUNG SEMICONDUCTOR INC DEE D PACKAGE DIMENSIONS , FQP 14.73 15.74 13.74 14.24 1111 9.75 10.25 14.73 15.74 19.78 20.29 13.74 14.24 0.22 0.43 0.76 JYP 0.71 0.96 Unit: mm 60 FQP 0.28 0.48 0.10 0.76 TYP 0.10 20
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KS5814

ks5206a05hz

Abstract: KS5206E SEMICONDUCTOR 0894 A " 07 255 SAMSUNG SEMICONDUCTOR INC DEE D 7U414E 0005055 5 , FQP 14.73 15.74 Unit: mm 60 FQP 13.74 14.24 Unit: mm 1111 14.73 15.74 9.75 10.25 13.74
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KS5206A KS5206E ks5206a05hz KS5206 KS5206F 2048H KS5206E/F
Abstract: 1.02 SAMSUNG SEMICONDUCTOR 0894 A " 07 255 SAMSUNG SEMICONDUCTOR INC DEE D 7U414E , - ä ö 48 FQP 14.73 15.74 Unit: mm 60 FQP 13.74 14.24 Unit: mm 1111 14.73 15.74 -
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KS5207 KS5207A KS5207E KS5207F III005703 KSS207E

LQFP 48 Package

Abstract: UCC5630 ) FQP Package RECOMMENDED OPERATING CONDITIONS TRMPWR Voltage . . . . . . . . . . . . . . . . . . . , 2.0 V ­30 30 µA DIFFB Single Ended Threshold 0.6 0.7 V DIFFB Sense LVDS , positive (+) signal. The FQP package is typically 0.2pF less than the MWP. Typical balance is 0.1pF except
Unitrode
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UCC5630 SSOP-36 LQFP-48 LQFP 48 Package EIA485 FAST-40 FAST-80 FAST-320 FAST-20

circuit diagram for samsung lcd

Abstract: ks531 SEMICONDUCTOR 0894 A " 07 255 SAMSUNG SEMICONDUCTOR INC DEE D 7U414E 0005055 5 , SEMICONDUCTOR INC G2E D 7^4142 DDQ5flSb 7 PACKAGE DIMENSIONS T - ? o -ä ö 48 FQP 14.73 15.74 Unit: mm 60 FQP 13.74 14.24 Unit: mm 1111 14.73 15.74 9.75 10.25 13.74 14.24
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circuit diagram for samsung lcd digital alarm watch circuit lcd circuit diagram for samsung IC mark A09 KS5184

LD 757 ps

Abstract: ; parameter tp Normalised Current Derating with h e i tsin : co 7IpC unc N \ \ \ \ IE -07 , Fig. 8. Typical transconductance, T. = 25 'C. 9ts = fQp); conditions: VD S = 25 V Normalised RDS , ); Ip - 13 A; V'qs = 5 V Fig.6. Typical on-state resistance, 7} = 25 "C. _FIdsion) = fQp
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LD 757 ps BUK545-100A/B BUK545 PINNING-SOT186 1E-02

jb21

Abstract: samsung K4 =0V VlN =Vgg 15 1 0.3 Vgg+0.3 0 0.7 - V gg -3.0V without load 1.7 2.7 - V gg=3.0V, under " 0" display , SAMSUNG SEMICONDUCTOR 0894 A " 07 255 SAMSUNG SEMICONDUCTOR INC DEE D 7U414E 0005055 , FQP 14.73 15.74 Unit: mm 60 FQP 13.74 14.24 Unit: mm 1111 14.73 15.74 9.75 10.25 13.74
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jb21 samsung K4 samsung display 10" samsung k5 KS6022A

SAMSUNG CHIP CAPACITOR

Abstract: , designed for FEM LCD operation with 1.5V power supply. 48 FQP FUNCTIONS · Standard four functions , SAMSUNG SEMICONDUCTOR 0894 A " 07 255 SAMSUNG SEMICONDUCTOR INC DEE D 7U414E 0005055 , 48 FQP 14.73 15.74 Unit: mm 60 FQP 13.74 14.24 Unit: mm 1111 14.73 15.74 9.75 10.25
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000573L KS6026 00GS744
Abstract: SAMSUNG SEMICONDUCTOR 0894 A " 07 0.56 1.02 255 SAMSUNG SEMICONDUCTOR INC DEE D , DIMENSIONS T - ? o -ä ö Unit: mm 48 FQP 13.74 14.24 1111 9.75 10.25 14.73 15.74 , 0.22 0.76 JYP 0.71 0.96 -
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KS5113
Abstract: HA - -0.7 -1.2 V -60 -120 - mA - - 100 HA - 200 - mV , ) MIN (NOTE 4) TYP MAX UNITS V c c = Max. Outputs Open fQP = 10MHz, 50% Duty Cycle CE = , Current Caused by an Input Transition Pair (HLH or LHL) fQP = Clock Frequency for Register Devices (Zero -
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CD74FCT377T CD74FCT377ATM CD74FCT377ATQM CD74FCT377CTM CD74FCT377CTQM CD74FCT377DTM
Abstract: : mm 0.30 TYP 0.56 1.02 SAMSUNG SEMICONDUCTOR 0894 A " 07 255 SAMSUNG , DDQ5flSb 7 PACKAGE DIMENSIONS T -? o -ä ö 48 FQP 14.73 15.74 Unit: mm 60 FQP 13.74 14.24 -
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KS5194
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