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Part : FQI8N60CTU Supplier : ON Semiconductor Manufacturer : Avnet Stock : - Best Price : €0.6189 Price Each : €1.2279
Part : FQI8N60CTU Supplier : ON Semiconductor Manufacturer : Avnet Stock : - Best Price : $0.5749 Price Each : $0.6089
Part : FQI8N60CTU Supplier : Fairchild Semiconductor Manufacturer : Rochester Electronics Stock : 24,817 Best Price : $1.36 Price Each : $1.36
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FQI85N06 Datasheet

Part Manufacturer Description PDF Type
FQI85N06 Fairchild Semiconductor 60 V N-Channel MOSFET Original
FQI85N06 Fairchild Semiconductor QFET N-CHANNEL Scan

FQI85N06

Catalog Datasheet MFG & Type PDF Document Tags

FQB85N06

Abstract: FQI85N06 QFET N-CHANNEL FQB85N06, FQI85N06 FEATURES Advanced New Design Avalanche Rugged Technology , © D2-PAK I2-PAK FQB85N06 FQI85N06 1. Gate 2. Drain 3. Source FQB85N06, FQI85N06 QFET N-CHANNEL , : Limited by Package 2 P , » SiMECÃ"SUÃTSR 3 FQB85N06, FQI85N06 QFET N-CHANNEL « "5 > c g - m » o> > m 2 Q Fig 7. Breakdown , Wave Pulse Duration [sec] 4 P
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OCR Scan
D2PAK/TO-263 PAK/TO-263
Abstract: FQB85N06 / FQI85N06 May 2001 QFET FQB85N06 / FQI85N06 60V N-Channel MOSFET General , °C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQB85N06 / FQI85N06 60 85 60 , . May 2001 FQB85N06 / FQI85N06 Electrical Characteristics Symbol Parameter TC = 25°C unless , Rev. A1. May 2001 FQB85N06 / FQI85N06 Typical Characteristics 10 2 ID, Drain Current , Semiconductor Corporation Rev. A1. May 2001 FQB85N06 / FQI85N06 Typical Characteristics (Continued Fairchild Semiconductor
Original
FQI85N06TU
Abstract: QFET N-CHANNEL FQB85N06, FQI85N06 FEATURES BVDSS = 60 V â'¢ Advanced New Design â , Fairchild Semiconductor Corporation 1 QFET N-CHANNEL FQB85N06, FQI85N06 ELECTRICAL , "t " li O a N D U C T C W ' J K S QFET N-CHANNEL FQB85N06, FQI85N06 Fig 1. Output , Charge [nC] P M M P I O iM lU B DU STO R: 3 QFET N-CHANNEL FQB85N06, FQI85N06 Fig 7 , , FQI85N06 Fig 12. Gate Charge Test Circuit & Waveform Fig 13. Resistive Switching Test Circuit & -
OCR Scan

FQB85N06

Abstract: FQI85N06 QFET TM FQB85N06 / FQI85N06 60V N-Channel MOSFET General Description Features These , °C) Drain Current FQB85N06 / FQI85N06 60 Units V 85 A - Continuous (TC = 100°C) IDM , FQB85N06 / FQI85N06 May 2001 Symbol TC = 25°C unless otherwise noted Parameter Test , Semiconductor Corporation Rev. A1. May 2001 FQB85N06 / FQI85N06 Electrical Characteristics FQB85N06 / FQI85N06 Typical Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5
Fairchild Semiconductor
Original

FQB85N06

Abstract: FQI85N06 FQB85N06 / FQI85N06 April 2000 QFET TM FQB85N06 / FQI85N06 60V N-Channel MOSFET , / FQI85N06 - Pulsed A 60 A 300 (Note 1) A ±25 V Single Pulsed Avalanche Energy , ©2000 Fairchild Semiconductor International Rev. A, April 2000 FQB85N06 / FQI85N06 Electrical , ] FQB85N06 / FQI85N06 Typical Characteristics VDS = 48V 8 6 4 2 Note : ID = 85A 0 0 , Charge [nC] Figure 6. Gate Charge Characteristics Rev. A, April 2000 FQB85N06 / FQI85N06
Fairchild Semiconductor
Original
Abstract: QFET N-CHANNEL FQB85N06, FQI85N06 FEATURES BVDSS = 60V · · · · · · · · Advanced New Design , 1 2 3 RDS(ON) = 0.010 ID = 85A } D2-PAK 2 I2-PAK FQB85N06 FQI85N06 1. Gate 2 , © 1999 Fairchild Semiconductor Corporation FQB85N06, FQI85N06 QFET N-CHANNEL ELECTRICAL , : Limited by Package 2 QFET N-CHANNEL FQB85N06, FQI85N06 Fig 1. Output Characteristics VGS , Gate Charge [nC] 3 FQB85N06, FQI85N06 QFET N-CHANNEL Fig 7. Breakdown Voltage vs Fairchild Semiconductor
Original
Abstract: FQB85N06 / FQI85N06 May 2001 QFET FQB85N06 / FQI85N06 60V N-Channel MOSFET General , °C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQB85N06 / FQI85N06 60 85 60 , . May 2001 FQB85N06 / FQI85N06 Electrical Characteristics Symbol Parameter TC = 25°C unless , Rev. A1. May 2001 FQB85N06 / FQI85N06 Typical Characteristics 10 2 ID, Drain Current , Semiconductor Corporation Rev. A1. May 2001 FQB85N06 / FQI85N06 Typical Characteristics (Continued Fairchild Semiconductor
Original
FQB85N06TM

IRFI520A

Abstract: FQI13N06 Discrete MOSFET TO-262 RDS(ON) Max (Ohms) @ VGS = 10V Products VDS Min. (V) 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-262(I2PAK) N-Channel ISL9N303AS3 30 Single 0.0032 0.005 - - 61 75 215 HUF75345S3 55 Single 0.007 - - - 125 75 325 HUF75333S3 55 Single 0.016 - - - 40 66 150 FQI85N06 60 Single 0.01 - - - 86 85 160
Fairchild Semiconductor
Original
FQI65N06 FQI55N06 FQI50N06 FQI30N06 RF1S25N06 FQI20N06 IRFI520A FQI13N06

SSP35n03

Abstract: bc417 FQI33N10 FQI33N10L FQI34N20L FQI3N80 FQI46N15 FQI50N06 FQI50N06L FQI5N15 FQI6N15 FQI7N10L FQI7P20 FQI85N06
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Original
SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA