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Part : FQI6N40CTU Supplier : Fairchild Semiconductor Manufacturer : Rochester Electronics Stock : 600 Best Price : $0.40 Price Each : $0.40
Part : FQI6N50TU Supplier : Fairchild Semiconductor Manufacturer : Rochester Electronics Stock : 1,650 Best Price : $0.83 Price Each : $0.83
Part : FQI6N60CTU Supplier : Fairchild Semiconductor Manufacturer : Rochester Electronics Stock : 1,844 Best Price : $0.94 Price Each : $0.94
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FQI65N06 Datasheet

Part Manufacturer Description PDF Type
FQI65N06 Fairchild Semiconductor 60 V N-Channel MOSFET Original

FQI65N06

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: FQB65N06 / FQI65N06 May 2001 QFET FQB65N06 / FQI65N06 60V N-Channel MOSFET General , °C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQB65N06 / FQI65N06 60 65 , . May 2001 FQB65N06 / FQI65N06 Electrical Characteristics Symbol Parameter TC = 25°C unless , Corporation Rev. A1. May 2001 FQB65N06 / FQI65N06 Typical Characteristics 10 2 ID, Drain , Semiconductor Corporation Rev. A1. May 2001 FQB65N06 / FQI65N06 Typical Characteristics (Continued Fairchild Semiconductor
Original
FQB65N06TM

FQB65N06

Abstract: FQI65N06 FQB65N06 / FQI65N06 April 2000 QFET TM FQB65N06 / FQI65N06 60V N-Channel MOSFET , / FQI65N06 - Pulsed A 46.1 A 260 (Note 1) A ±25 V Single Pulsed Avalanche , Fairchild Semiconductor International Rev. A, April 2000 FQB65N06 / FQI65N06 Electrical , / FQI65N06 Typical Characteristics VDS = 30V VDS = 48V 8 6 4 2 Note : ID = 65A 0 0 , Charge [nC] Figure 6. Gate Charge Characteristics Rev. A, April 2000 FQB65N06 / FQI65N06
Fairchild Semiconductor
Original
Abstract: FQB65N06 / FQI65N06 May 2001 QFET FQB65N06 / FQI65N06 60V N-Channel MOSFET General , °C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQB65N06 / FQI65N06 60 65 , . May 2001 FQB65N06 / FQI65N06 Electrical Characteristics Symbol Parameter TC = 25°C unless , Corporation Rev. A1. May 2001 FQB65N06 / FQI65N06 Typical Characteristics 10 2 ID, Drain , Semiconductor Corporation Rev. A1. May 2001 FQB65N06 / FQI65N06 Typical Characteristics (Continued Fairchild Semiconductor
Original
FQI65N06TU

FQB65N06

Abstract: FQI65N06 QFET TM FQB65N06 / FQI65N06 60V N-Channel MOSFET General Description Features These , Current FQB65N06 / FQI65N06 60 Units V 65 A - Continuous (TC = 100°C) IDM Drain , FQB65N06 / FQI65N06 May 2001 Symbol TC = 25°C unless otherwise noted Parameter Test , Fairchild Semiconductor Corporation Rev. A1. May 2001 FQB65N06 / FQI65N06 Electrical Characteristics FQB65N06 / FQI65N06 Typical Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V
Fairchild Semiconductor
Original

IRFI520A

Abstract: FQI13N06 FQI65N06 60 Single 0.016 - - - 48 65 150 FQI55N06 60 Single 0.02
Fairchild Semiconductor
Original
ISL9N303AS3 HUF75345S3 HUF75333S3 FQI85N06 FQI50N06 FQI30N06 IRFI520A FQI13N06 FQI20N06