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Part : FQI50N06TU Supplier : ON Semiconductor Manufacturer : Avnet Stock : - Best Price : €0.5959 Price Each : €1.1829
Part : FQI50N06TU Supplier : ON Semiconductor Manufacturer : Avnet Stock : - Best Price : $0.5539 Price Each : $0.5859
Part : FQI50N06LTU Supplier : Fairchild Semiconductor Manufacturer : Rochester Electronics Stock : 1,730 Best Price : $1.77 Price Each : $1.77
Part : FQI50N06TU Supplier : Fairchild Semiconductor Manufacturer : Rochester Electronics Stock : 841 Best Price : $1.36 Price Each : $1.36
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FQI50N06 Datasheet

Part Manufacturer Description PDF Type
FQI50N06 Fairchild Semiconductor 60 V N-Channel MOSFET Original
FQI50N06 Fairchild Semiconductor QFET N-CHANNEL Scan
FQI50N06L Fairchild Semiconductor 60 V Logic N-Channel MOSFET Original
FQI50N06L Fairchild Semiconductor QFET N-CHANNEL Scan
FQI50N06LTU Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 52.4A I2PAK Original
FQI50N06LTU Fairchild Semiconductor 60V N-Channel Logic level QFET Original
FQI50N06TU Fairchild Semiconductor 60V N-Channel QFET Original

FQI50N06

Catalog Datasheet MFG & Type PDF Document Tags

FQB50N06

Abstract: FQI50N06 QFET N-CHANNEL FQB50N06, FQI50N06 FEATURES Advanced New Design Avalanche Rugged Technology , I2-PAK FQB50N06 FQI50N06 1. Gate 2. Drain 3. Source FQB50N06, FQI50N06 QFET N-CHANNEL ELECTRICAL , , 15 20 25 Q , Total Gate Charge [nC] ISMMRCSMEIJE» SiMECÃ"SUÃTSR 3 FQB50N06, FQI50N06 QFET , Temperature[°C] Fig 11. Thermal Response 4 PAIRCHILD QFET N-CHANNEL FQB50N06, FQI50N06 Fig 12. Gate
-
OCR Scan
D2PAK/TO-263 PAK/TO-263
Abstract: QFET N-CHANNEL FQB50N06, FQI50N06 FEATURES BVDSS = 60 V â'¢ Advanced New Design â , Semiconductor Corporation 1 QFET N-CHANNEL FQB50N06, FQI50N06 ELECTRICAL CHARACTERISTICS Symbol , " l iO a N D U C T C W ' JS K QFET N-CHANNEL FQB50N06, FQI50N06 Fig 1. Output , N-CHANNEL FQB50N06, FQI50N06 Fig 7. Breakdown Voltage vs. Temperature Fig 8. On-Resistance vs , s ii QFET N-CHANNEL FQB50N06, FQI50N06 Fig 12. Gate Charge Test Circuit & Waveform Fig -
OCR Scan
Abstract: Tape Width Quantity 330mm 24mm FQI50N06 FQI50N06TU I2-PAK - - 800 50 , FQB50N06 / FQI50N06 N-Channel QFET® MOSFET 60 V, 50 A, 22 mâ"¦ Description Features This , Maximum Ratings Symbol VDSS ID TC = 25°C unless otherwise noted FQB50N06TM / FQI50N06TU 60 , FQB50N06TM FQI50N06TU Parameter Thermal Resistance, Junction to Case, Max. 1.24 Thermal Resistance , / FQI50N06 Rev. C1 1 o C/W 40 www.fairchildsemi.com FQB50N06 / FQI50N06 â'" N-Channel QFET Fairchild Semiconductor
Original
Abstract: FQB50N06 / FQI50N06 May 2001 QFET FQB50N06 / FQI50N06 60V N-Channel MOSFET General , °C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQB50N06 / FQI50N06 60 50 , FQB50N06 / FQI50N06 Electrical Characteristics Symbol Parameter TC = 25°C unless otherwise noted , FQB50N06 / FQI50N06 Typical Characteristics 10 2 10 1 ID, Drain Current [A] ID, Drain , Corporation Rev. A1. May 2001 FQB50N06 / FQI50N06 Typical Characteristics (Continued) 1.2 Fairchild Semiconductor
Original

FQB50N06

Abstract: FQI50N06 QFET TM FQB50N06 / FQI50N06 60V N-Channel MOSFET General Description Features These , °C) Drain Current FQB50N06 / FQI50N06 60 Units V 50 A - Continuous (TC = 100°C) IDM , . A1. May 2001 FQB50N06 / FQI50N06 May 2001 Symbol TC = 25°C unless otherwise noted , Fairchild Semiconductor Corporation Rev. A1. May 2001 FQB50N06 / FQI50N06 Electrical Characteristics FQB50N06 / FQI50N06 Typical Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V
Fairchild Semiconductor
Original
Abstract: FQB50N06 / FQI50N06 May 2001 QFET FQB50N06 / FQI50N06 60V N-Channel MOSFET General , °C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQB50N06 / FQI50N06 60 50 , FQB50N06 / FQI50N06 Electrical Characteristics Symbol Parameter TC = 25°C unless otherwise noted , FQB50N06 / FQI50N06 Typical Characteristics 10 2 10 1 ID, Drain Current [A] ID, Drain , Corporation Rev. A1. May 2001 FQB50N06 / FQI50N06 Typical Characteristics (Continued) 1.2 Fairchild Semiconductor
Original

MOTOR DRIVER 48v 50A

Abstract: FQB50N06 / FQI50N06 N-Channel MOSFET March 2013 60 V, 50 A, 22 m Description N-Channel QFET MOSFET FQB50N06 / FQI50N06 This N-Channel enhancement mode power MOSFET is produced using , (Note 1) FQB50N06 / FQI50N06 60 50 35.4 200 ± 25 (Note 2) (Note 1) (Note 1) (Note 3) Unit V A A A , Fairchild Semiconductor Corporation FQB50N06 / FQI50N06 Rev. C0 www.fairchildsemi.com FQB50N06 / FQI50N06 N-Channel MOSFET Electrical Characteristics Symbol Parameter TC = 25°C unless otherwise
Fairchild Semiconductor
Original
MOTOR DRIVER 48v 50A
Abstract: QFET ® FQB50N06 / FQI50N06 60V N-Channel MOSFET General Description Features These , Continuous (TC = 25° C) Drain Current IDM Drain Current VGSS FQB50N06 / FQI50N06 60 EAS , / FQI50N06 October 2008 Symbol TC = 25° unless otherwise noted C Parameter Test Conditions , temperature ©2008 Fairchild Semiconductor Corporation Rev. A2. Oct 2008 FQB50N06 / FQI50N06 Electrical Characteristics FQB50N06 / FQI50N06 Typical Characteristics VGS 15.0 V 10.0 V 8.0 V Fairchild Semiconductor
Original

FQB50N06

Abstract: FQI50N06 QFET ® FQB50N06 / FQI50N06 60V N-Channel MOSFET General Description Features These , (TC = 25°C) Drain Current FQB50N06 / FQI50N06 60 Units V 50 A - Continuous (TC = 100 , . A2. Oct 2008 FQB50N06 / FQI50N06 October 2008 Symbol TC = 25°C unless otherwise noted , Fairchild Semiconductor Corporation Rev. A2. Oct 2008 FQB50N06 / FQI50N06 Electrical Characteristics FQB50N06 / FQI50N06 Typical Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V
Fairchild Semiconductor
Original
Abstract: FQB50N06 / FQI50N06 May 2001 QFET FQB50N06 / FQI50N06 60V N-Channel MOSFET General , °C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQB50N06 / FQI50N06 60 50 , FQB50N06 / FQI50N06 Electrical Characteristics Symbol Parameter TC = 25°C unless otherwise noted , FQB50N06 / FQI50N06 Typical Characteristics 10 2 10 1 ID, Drain Current [A] ID, Drain , Corporation Rev. A1. May 2001 FQB50N06 / FQI50N06 Typical Characteristics (Continued) 1.2 Fairchild Semiconductor
Original

FQB50N06

Abstract: FQI50N06 FQB50N06 / FQI50N06 April 2000 QFET TM FQB50N06 / FQI50N06 60V N-Channel MOSFET , / FQI50N06 - Pulsed A 35.4 A 200 (Note 1) A ±25 V Single Pulsed Avalanche , Fairchild Semiconductor International Rev. A, April 2000 FQB50N06 / FQI50N06 Electrical , 1000 Crss 500 V GS , Gate-Source Voltage [V] 2500 Capacitance [pF] FQB50N06 / FQI50N06 , ] Figure 6. Gate Charge Characteristics Rev. A, April 2000 FQB50N06 / FQI50N06 Typical
Fairchild Semiconductor
Original
Abstract: QFET N-CHANNEL FQB50N06, FQI50N06 FEATURES BVDSS = 60V · · · · · · · · Advanced New Design , 1 2 3 RDS(ON) = 0.022 ID = 50A D2-PAK 2 I2-PAK FQB50N06 FQI50N06 1. Gate 2. Drain , © 1999 Fairchild Semiconductor Corporation FQB50N06, FQI50N06 QFET N-CHANNEL ELECTRICAL , Operating Temperature 2 QFET N-CHANNEL FQB50N06, FQI50N06 Fig 1. Output Characteristics 10 2 , Charge [nC] 3 FQB50N06, FQI50N06 QFET N-CHANNEL Fig 7. Breakdown Voltage vs. Temperature Fairchild Semiconductor
Original

IRFI520A

Abstract: FQI13N06 - - - 35 55 133 FQI50N06 60 Single 0.022 - - - 31 50 , 53 FQI13N06 60 Single 0.135 - - - 5.8 13 45 FQI50N06L 60
Fairchild Semiconductor
Original
ISL9N303AS3 HUF75345S3 HUF75333S3 FQI85N06 FQI65N06 FQI55N06 IRFI520A FQI20N06 FQI30N06

SSP35n03

Abstract: bc417 FQI33N10 FQI33N10L FQI34N20L FQI3N80 FQI46N15 FQI50N06 FQI50N06L FQI5N15 FQI6N15 FQI7N10L FQI7P20 FQI85N06
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Original
SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA
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