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FQI34N20L Datasheet

Part Manufacturer Description PDF Type
FQI34N20L Fairchild Semiconductor 200 V Logic N-Channel MOSFET Original

FQI34N20L

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: FQB34N20L / FQI34N20L October 2008 QFET ® FQB34N20L / FQI34N20L 200V LOGIC N-Channel , Continuous (TC = 25° C) Drain Current IDM Drain Current VGSS FQB34N20L / FQI34N20L 200 EAS , temperature ©2008 Fairchild Semiconductor International Rev. A1, Oct 2008 FQB34N20L / FQI34N20L , Crss 700 VGS, Gate-Source Voltage [V] 5600 Capacitance [pF] FQB34N20L / FQI34N20L , ) Drain-Source Breakdown Voltage FQB34N20L / FQI34N20L Typical Characteristics 1.0 #22; Notes : 1. VGS Fairchild Semiconductor
Original

FQB34N20L

Abstract: FQI34N20L FQB34N20L / FQI34N20L October 2008 QFET ® FQB34N20L / FQI34N20L 200V LOGIC N-Channel , Continuous (TC = 25°C) Drain Current FQB34N20L / FQI34N20L 200 Units V 31 A - Continuous , Fairchild Semiconductor International Rev. A1, Oct 2008 FQB34N20L / FQI34N20L Electrical , Voltage [V] VDS = 40V 4900 Capacitance [pF] FQB34N20L / FQI34N20L Typical Characteristics , / FQI34N20L Typical Characteristics 1.0 Notes : 1. VGS = 0 V 2. ID = 250 A 0.9 0.8 -100
Fairchild Semiconductor
Original

FQB34N20L

Abstract: FQI34N20L FQB34N20L / FQI34N20L June 2000 QFET TM FQB34N20L / FQI34N20L 200V LOGIC N-Channel , Current FQB34N20L / FQI34N20L 200 Units V 31 A - Continuous (TC = 100°C) IDM Drain , Fairchild Semiconductor International Rev. A, June 2000 FQB34N20L / FQI34N20L Electrical , , Gate-Source Voltage [V] VDS = 40V 4900 Capacitance [pF] FQB34N20L / FQI34N20L Typical , / FQI34N20L Typical Characteristics 1.0 Notes : 1. VGS = 0 V A 2. ID = 250 0.9 0.8 -100
Fairchild Semiconductor
Original
Abstract: FQB34N20L / FQI34N20L June 2000 QFET FQB34N20L / FQI34N20L 200V LOGIC N-Channel MOSFET , Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQB34N20L / FQI34N20L 200 31 20 124 , , June 2000 FQB34N20L / FQI34N20L Electrical Characteristics Symbol Parameter TC = 25°C unless , temperature ©2000 Fairchild Semiconductor International Rev. A, June 2000 FQB34N20L / FQI34N20L , , June 2000 FQB34N20L / FQI34N20L Typical Characteristics (Continued) 1.2 2.5 BV DSS Fairchild Semiconductor
Original
FQB34N20LTM
Abstract: FQB34N20L / FQI34N20L N-Channel QFET® MOSFET April 2013 FQB34N20L / FQI34N20L N-Channel QFET , Current - Pulsed (Note 1) FQB34N20L / FQI34N20L 200 31 20 124 ± 20 (Note 2) (Note 1) (Note 1) (Note 3 , . FQB34N20L / FQI34N20L 0.7 40 62.5 Unit °C/W °C/W °C/W * When mounted on the minimum pad size recommended (PCB Mount) ©2008 Fairchild Semiconductor Corporation FQB34N20L / FQI34N20L Rev. C0 www.fairchildsemi.com FQB34N20L / FQI34N20L N-Channel QFET® MOSFET Electrical Characteristics Symbol Parameter Fairchild Semiconductor
Original
Abstract: Fairchild P/N FQI34N20L - 200V N-Channel Logic Level QFET Product FQI34N20LTU Product status Full , FQB34N20L / FQI34N20L June 2000 QFET FQB34N20L / FQI34N20L 200V LOGIC N-Channel MOSFET , Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQB34N20L / FQI34N20L 200 31 20 124 , , June 2000 FQB34N20L / FQI34N20L Electrical Characteristics Symbol Parameter TC = 25°C unless , temperature ©2000 Fairchild Semiconductor International Rev. A, June 2000 FQB34N20L / FQI34N20L Fairchild Semiconductor
Original

IRFI520A

Abstract: FQI13N06 FQI34N20L 200 Single 0.075 0.08@5V - - 55 31 180 FQI19N20L 200 Single
Fairchild Semiconductor
Original
ISL9N303AS3 HUF75345S3 HUF75333S3 FQI85N06 FQI65N06 FQI55N06 IRFI520A FQI13N06 FQI20N06 FQI30N06 FQI50N06

FDC6331

Abstract: fdp047an FQI33N10 FQI33N10L FQI34N20L FQI3N80 FQI46N15 FQI50N06 FQI50N06L FQI5N15 FQI6N15 FQI7N10L FQI7P20 FQI85N06
Fairchild Semiconductor
Original
SFP9614 FDC6331 fdp047an FDB045AN fdd5614p FQA70N15 FQPF10N20 2N7002 2N7002MTF BS170 BSS123 BSS138 BSS84