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Part : FQI32N12V2TU Supplier : Fairchild Semiconductor Manufacturer : Rochester Electronics Stock : 592 Best Price : $0.63 Price Each : $0.63
Part : FQI32N20CTU Supplier : Fairchild Semiconductor Manufacturer : Rochester Electronics Stock : 1,832 Best Price : $1.23 Price Each : $1.23
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Part : FQI3P20TU Supplier : Fairchild Semiconductor Manufacturer : Rochester Electronics Stock : 1,000 Best Price : $1.01 Price Each : $1.01
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FQI34N20 Datasheet

Part Manufacturer Description PDF Type
FQI34N20 Fairchild Semiconductor 200 V N-Channel MOSFET Original
FQI34N20L Fairchild Semiconductor 200 V Logic N-Channel MOSFET Original

FQI34N20

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: FQB34N20 / FQI34N20 / FQB34N20TM_AM002 N-Channel QFET® MOSFET 200 V, 31 A, 75 mΩ Description , FQB34N20 / FQI34N20 / FQB34N20TM_AM002 Rev. C0 www.fairchildsemi.com FQB34N20 / FQI34N20 , Corporation FQB34N20 / FQI34N20 / FQB34N20TM_AM002 Rev. C0 www.fairchildsemi.com FQB34N20 / FQI34N20 , #16;#11;#5;#11; #14;#6;#5;#2;#17;#14;#2; #17; ©2008 Fairchild Semiconductor Corporation FQB34N20 / FQI34N20 / FQB34N20TM_AM002 , #7;#19;#11;#14;#6;#7;#7; #16;#11;#5;#3;#6;#7; #16;#11;#5;#11; #14;#6;#5;#2;#17;#14;#2; #17; www.fairchildsemi.com ® FQB34N20 / FQI34N20 / FQB34N20TM_AM002 Fairchild Semiconductor
Original
Abstract: QFET N-CHANNEL FQB34N20, FQI34N20 FEATURES BV qss = 200V â'¢ Advanced New Design â , °C/W QFET N-CHANNEL FQB34N20, FQI34N20 ELECTRICAL CHARACTERISTICS Symbol (Tc = 25 , ICONDUCTOR tm QFET N-CHANNEL FQB34N20, FQI34N20 Fig 1. Output Characteristics Fig 2. Transfer , ICONDUCTOR tm QFET N-CHANNEL FQB34N20, FQI34N20 Fig 7. Breakdown Voltage vs. Temperature Fig 8 , ICONDUCTOR tm QFET N-CHANNEL FQB34N20, FQI34N20 Fig 12. Gate Charge Test Circuit & Waveform -
OCR Scan
Abstract: QFET N-CHANNEL FQB34N20, FQI34N20 FEATURES BVDSS = 200V · · · · · · · · Advanced New Design , .) FQB34N20 FQI34N20 RDS(ON) = 0.075 ID = 31A D2-PAK I2-PAK 1. Gate 2. Drain 3. Source ABSOLUTE , Semiconductor Corporation FQB34N20, FQI34N20 QFET N-CHANNEL ELECTRICAL CHARACTERISTICS (TC = 25 , Temperature 2 QFET N-CHANNEL FQB34N20, FQI34N20 Fig 1. Output Characteristics 10 2 Fig 2 , VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] 3 FQB34N20, FQI34N20 QFET Fairchild Semiconductor
Original
Abstract: information only. Rev. F1 Product Folder - Fairchild P/N FQI34N20 - 200V N-Channel QFET SEARCH , space space FQI34N20 Products groups 200V N-Channel QFET Analog and Mixed Signal Datasheet Contents , notes q q q q q q back to top Product status/pricing/packaging Product FQI34N20TU Product , Folder - Fairchild P/N FQI34N20 - 200V N-Channel QFET * 1,000 piece Budgetary Pricing back to top Fairchild Semiconductor
Original

IRFI520A

Abstract: FQI13N06 - - - - - FQI34N20 200 Single 0.075 - - - 60 31 180 , FQI34N20L 200 Single 0.075 0.08@5V - - 55 31 180 FQI19N20L 200 Single
Fairchild Semiconductor
Original
ISL9N303AS3 HUF75345S3 HUF75333S3 FQI85N06 FQI65N06 FQI55N06 IRFI520A FQI13N06 FQI20N06 FQI30N06 FQI50N06

SSP35n03

Abstract: bc417 FQB34N20L / FQI34N20L October 2008 QFET ® FQB34N20L / FQI34N20L 200V LOGIC N-Channel , Continuous (TC = 25°C) Drain Current FQB34N20L / FQI34N20L 200 Units V 31 A - Continuous , Fairchild Semiconductor International Rev. A1, Oct 2008 FQB34N20L / FQI34N20L Electrical , Voltage [V] VDS = 40V 4900 Capacitance [pF] FQB34N20L / FQI34N20L Typical Characteristics , / FQI34N20L Typical Characteristics 1.0 Notes : 1. VGS = 0 V 2. ID = 250 A 0.9 0.8 -100
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Original
SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA

FQPF*10n20c

Abstract: FQPf10N60C FQI33N10 FQI33N10L FQI34N20L FQI3N80 FQI46N15 FQI50N06 FQI50N06L FQI5N15 FQI6N15 FQI7N10L FQI7P20 FQI85N06
Fairchild Semiconductor
Original
FDZ203N FQPF*10n20c FQPf10N60C FQP17P06 FQPF10N20C FQA90N08 fqpf6n80 FDZ201N FDZ209N FDZ2553N FDZ2553NZ FDZ2551N FDZ7064N

FLMP SuperSOT-6

Abstract: Complementary MOSFETs buz11 FQB34N20L / FQI34N20L June 2000 QFET TM FQB34N20L / FQI34N20L 200V LOGIC N-Channel , Current FQB34N20L / FQI34N20L 200 Units V 31 A - Continuous (TC = 100°C) IDM Drain , Fairchild Semiconductor International Rev. A, June 2000 FQB34N20L / FQI34N20L Electrical , , Gate-Source Voltage [V] VDS = 40V 4900 Capacitance [pF] FQB34N20L / FQI34N20L Typical , / FQI34N20L Typical Characteristics 1.0 Notes : 1. VGS = 0 V A 2. ID = 250 0.9 0.8 -100
Fairchild Semiconductor
Original
FLMP SuperSOT-6 Complementary MOSFETs buz11 FDG6316 FQD7P20 IRF650 IRFS540 SC70-6 SC75-6 247TM

FQPF*7N65C APPLICATIONS

Abstract: bc548 spice model FQB34N20L / FQI34N20L June 2000 QFET FQB34N20L / FQI34N20L 200V LOGIC N-Channel MOSFET , Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQB34N20L / FQI34N20L 200 31 20 124 , , June 2000 FQB34N20L / FQI34N20L Electrical Characteristics Symbol Parameter TC = 25°C unless , temperature ©2000 Fairchild Semiconductor International Rev. A, June 2000 FQB34N20L / FQI34N20L , , June 2000 FQB34N20L / FQI34N20L Typical Characteristics (Continued) 1.2 2.5 BV DSS
Fairchild Semiconductor
Original
FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 bc547 spice model TN3440A TN4033A TN5415A TN6705A TN6707A TN6714A

SSP6N60A

Abstract: IRF650 FQB34N20L / FQI34N20L October 2008 QFET ® FQB34N20L / FQI34N20L 200V LOGIC N-Channel , Continuous (TC = 25° C) Drain Current IDM Drain Current VGSS FQB34N20L / FQI34N20L 200 EAS , temperature ©2008 Fairchild Semiconductor International Rev. A1, Oct 2008 FQB34N20L / FQI34N20L , Crss 700 VGS, Gate-Source Voltage [V] 5600 Capacitance [pF] FQB34N20L / FQI34N20L , ) Drain-Source Breakdown Voltage FQB34N20L / FQI34N20L Typical Characteristics 1.0 #22; Notes : 1. VGS
Fairchild Semiconductor
Original
SSP6N60A IRF540 mosfet with maximum VDS 12v SSP2N60B SSP4N60A ssr2955 SSS7N60B FDG6323L FDG6324L FDG6331L FDC6323L FDC6324L FDC6325L

thermistor KSD201

Abstract: IRF power mosfets catalog FQB34N20L / FQI34N20L N-Channel QFET® MOSFET April 2013 FQB34N20L / FQI34N20L N-Channel QFET , Current - Pulsed (Note 1) FQB34N20L / FQI34N20L 200 31 20 124 ± 20 (Note 2) (Note 1) (Note 1) (Note 3 , . FQB34N20L / FQI34N20L 0.7 40 62.5 Unit °C/W °C/W °C/W * When mounted on the minimum pad size recommended (PCB Mount) ©2008 Fairchild Semiconductor Corporation FQB34N20L / FQI34N20L Rev. C0 www.fairchildsemi.com FQB34N20L / FQI34N20L N-Channel QFET® MOSFET Electrical Characteristics Symbol Parameter
Fairchild Semiconductor
Original
thermistor KSD201 IRF power mosfets catalog BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode make SMPS inverter welding machine 1N5402 spice model ISO-14001

thermistor KSD201

Abstract: pin configuration NPN transistor BC548 Fairchild P/N FQI34N20L - 200V N-Channel Logic Level QFET Product FQI34N20LTU Product status Full , FQB34N20L / FQI34N20L June 2000 QFET FQB34N20L / FQI34N20L 200V LOGIC N-Channel MOSFET , Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQB34N20L / FQI34N20L 200 31 20 124 , , June 2000 FQB34N20L / FQI34N20L Electrical Characteristics Symbol Parameter TC = 25°C unless , temperature ©2000 Fairchild Semiconductor International Rev. A, June 2000 FQB34N20L / FQI34N20L
Fairchild Semiconductor
Original
pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 TS-16949