500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Search Stock

Shift+Click on the column header for multi-column sorting 
Part
Manufacturer
Supplier
Stock
Best Price
Price Each
Ordering
Part : FQA90N08 Supplier : ON Semiconductor Manufacturer : Avnet Stock : - Best Price : $1.29 Price Each : $1.39
Part : FQA90N08 Supplier : ON Semiconductor Manufacturer : Future Electronics Stock : - Best Price : $1.45 Price Each : $1.97
Part : FQA90N08 Supplier : Fairchild Semiconductor Manufacturer : Rochester Electronics Stock : 28,350 Best Price : $3.42 Price Each : $3.42
Part : FQA90N08 Supplier : Fairchild Semiconductor Manufacturer : New Advantage Stock : 2,104 Best Price : $2.14 Price Each : $2.28
Shipping cost not included. Currency conversions are estimated. 

FQA90N08 Datasheet

Part Manufacturer Description PDF Type
FQA90N08 Fairchild Semiconductor 80 V N-Channel MOSFET Original

FQA90N08

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: FQA90N08 N-Channel QFET® MOSFET 80 V, 90 A, 16 mΩ Description Features This N-Channel , °C) Drain Current FQA90N08 80 90 IDM Drain Current Gate-Source Voltage - Pulsed A , °C) (Note 1) 21.4 6.5 214 1.43 -55 to +175 mJ V/ns W W/°C °C 300 °C FQA90N08 0.7 , FQA90N08 Rev. C2 1 www.fairchildsemi.com FQA90N08 â'" N-Channel QFET® MOSFET June 2014 Device Marking Device FQA90N08 FQA90N08 Electrical Characteristics Symbol Package TO Fairchild Semiconductor
Original
Abstract: FQA90N08 August 2000 QFET FQA90N08 80V N-Channel MOSFET General Description These , ) FQA90N08 80 90 63.5 360 ± 25 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/°C °C , . A, August 2000 FQA90N08 Electrical Characteristics Symbol Parameter TC = 25°C unless , International Rev. A, August 2000 FQA90N08 Typical Characteristics 10 2 ID, Drain Current [A , Semiconductor International Rev. A, August 2000 FQA90N08 Typical Characteristics (Continued) 1.2 Fairchild Semiconductor
Original
Abstract: FQA90N08 N-Channel QFET® MOSFET 80 V, 90 A, 16 mΩ Description Features This N-Channel , °C) Drain Current FQA90N08 80 90 - Continuous (TC = 100°C) IDM Drain Current Unit V A , °C) (Note 1) 21.4 6.5 214 1.43 -55 to +175 mJ V/ns W W/°C °C 300 °C FQA90N08 0.7 , FQA90N08 Rev. C1 1 www.fairchildsemi.com FQA90N08 â'" N-Channel QFET® MOSFET October 2013 Device Marking Device FQA90N08 FQA90N08 Electrical Characteristics Symbol Package TO Fairchild Semiconductor
Original
Abstract: FQA90N08 N-Channel MOSFET March 2013 FQA90N08 N-Channel QFET MOSFET 80 V, 90 A, 16 m , °C) Drain Current - Pulsed (Note 1) FQA90N08 80 90 63.5 360 ± 25 (Note 2) (Note 1) (Note 1) (Note 3 , Fairchild Semiconductor Corporation FQA90N08 Rev. C0 www.fairchildsemi.com FQA90N08 N-Channel MOSFET , of operating temperature ©2000 Fairchild Semiconductor Corporation FQA90N08 Rev. C0 www.fairchildsemi.com FQA90N08 N-Channel MOSFET Typical Characteristics 10 2 ID, Drain Current [A] ID Fairchild Semiconductor
Original

FQA90N08

Abstract: QFET TM FQA90N08 80V N-Channel MOSFET General Description Features These N-Channel , °C) Drain Current FQA90N08 80 90 - Continuous (TC = 100°C) Units V A 63.5 A (Note 1 , Units °C/W 0.24 - °C/W - 40 °C/W Rev. A1, January 2001 FQA90N08 January , International Rev. A1, January 2001 FQA90N08 Electrical Characteristics FQA90N08 Typical , Characteristics Rev. A1, January 2001 FQA90N08 Typical Characteristics (Continued) 3.0 1.2
Fairchild Semiconductor
Original

FQA90N08

Abstract: QFET TM FQA90N08 80V N-Channel MOSFET General Description Features These N-Channel , °C) Drain Current FQA90N08 80 90 - Continuous (TC = 100°C) IDM Drain Current - Pulsed , Units °C/W 0.24 - °C/W - 40 °C/W Rev. A1, January 2001 FQA90N08 January , International Rev. A1, January 2001 FQA90N08 Electrical Characteristics FQA90N08 Typical , Characteristics Rev. A1, January 2001 FQA90N08 Typical Characteristics (Continued) 3.0 1.2
Fairchild Semiconductor
Original
Abstract: QFET TM FQA90N08 80V N-Channel MOSFET General Description Features These N-Channel , Continuous (TC = 25° C) Drain Current FQA90N08 80 90 IDM Drain Current EAS Single Pulsed , . A1, January 2001 FQA90N08 January 2001 Symbol TC = 25° unless otherwise noted C , operating temperature ©2000 Fairchild Semiconductor International Rev. A1, January 2001 FQA90N08 Electrical Characteristics FQA90N08 Typical Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V Fairchild Semiconductor
Original

fqa38n30

Abstract: FGA25N120 FQA6N80 FQA70N08 FQA7N60 FQA7N90 FQA8N80 FQA90N08 FQA9N90 IRFP140A IRFP244B_FP001 IRFP340B
Fairchild Semiconductor
Original
SGH10N60RUFTU SGH40N60UFDM1TU SGH80N60UFTU FQA11N90C FQA47P06 SGH40N60UFDTU fqa38n30 FGA25N120 FGA15N120ANDTU TO-3P package KSC5047TU SFH154 SFH9240 SGH10N120RUFDTU SGH15N120RUFTU

fqa38n30

Abstract: IRFP460C equivalent FQA40N25 FQA44N30 FQA55N10 FQA5N90 FQA6N70 FQA6N90C FQA70N15 FQA7N80C FQA8N80 FQA90N08 FQA9N90
Fairchild Semiconductor
Original
FJA13009TU FJA4210RTU FJA4213RTU FJA4310YTU FQA10N60C FQA13N80 IRFP460C equivalent FQA24N50 fqa16n50 bjt test plan FQA11N40

FQA90N08

Abstract: FQA38N30 Discrete MOSFETs TO-3P RDS(ON) Max (Ohms) @ VGS = 10V Products VDS Min. (V) 4.5V 2.5V 1.8V Qg (nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-3P N-Channel FQA170N06 60 Single 0.0056 - - - 220 170 375 FQA85N06 60 Single 0.01 - - - 86 100 214 FQA65N06 60 Single 0.016 - - - 48 72 183 FQA160N08 80 Single 0.007 - - - 220 160 375 FQA90N08
Fairchild Semiconductor
Original
FQA58N08 FQA44N08 FQA140N10 SSH70N10A FQA70N10 IRFP150A FQA9N90 equivalent FQA19N20L MOSFET FQA10N80 TO-3P FQA24N60 FQA44N10

MC0628R

Abstract: mc0628 FQA5N90_F109 FQA6N80_F109 FQA6N90_F109 FQA7N80_F109 FQA7N90M_F109 FQA7N90_F109 FQA90N08 FQAF17N40
-
Original
FDC658AP MC0628R mc0628 MC0628R replacement FAIRCHILD SEMICONDUCTOR Fairchild cross KA3846 ST42091 F50188E NB5F009 74ABT646CMSA 74ABT646CMSAX 74ABT646CMTC