FPD6836 9603E-16 2027E-16 0396E-17 00161E-6 1063E-16 9467E-17 50476E-16 1E-11

24/01/2005 Modelling Report FPD6836 TOM3 and TOM2 Models Version 1.0 - Mark Holm Device Design and Modelling Group Filtronic

FPD6836 FPD6836 TOM3 and TOM2 Models 24/01/2005 Modelling Report FPD6836 FPD6836 TOM3 and TOM2 Models Version 1.0 - Mark Holm Device Design and Modelling Group Filtronic Compound Semiconductor Ltd. Mark Holm 1 Filtronic Confidential FPD6836 FPD6836 TOM3 and TOM2 Models 24/01/2005 Introduction This report describes the models for the FPD6836 FPD6836 discrete p-HEMT device. The models coupled with package models (given elsewhere). The model describes the device and the inbuilt inductance provided by the connecting bond wires. The metal fixture up until the connecting bond wires has been de-embedded. Models Two models are provided for different simulators these are as follows: TOM3 This model provides a good fit to the measured data and has an advanced charge form. This allows the TOM3 model to accurately model the device over a wide range of operating conditions. This model is recommended for use in most simulators TOM2 This model is provided for the simulators that do not include TOM3 within there component set. This model employs a similar charge from to the TOM3 but only has a simple charge model. Consequently I recommend this model only be used when the TOM3 component is not present. Mark Holm 2 Filtronic Confidential FPD6836 FPD6836 TOM3 and TOM2 Models 24/01/2005 TOM3 Model The TOM3 model was extracted for the FPD6836 FPD6836 discrete part is shown below: External Parasitics The following network shows the external parasitics present in the device model: PORT P=2 Z =50 Ohm CdGround1 CAP ID= CdGround1 C=0.00822 pF IdExt IND ID=I dext L=0.2414 n H CdGround2 CAP ID=CdG round2 C=0.0 0822 pF Id IND ID= Id L=0.055 nH TOM3/TOM2 Model RES ID=Rd R= 0.860 8 O hm Rd IND ID= Igext L=0.1607 nH IgExt PORT P=1 Z=5 0 O hm IND ID= Ig L=0.155 n H Ig RES ID= Rg R=1.145 Ohm Rg 2 TOM3 ID= TOMparms NG=10 TJ=24.85 DegC W= 75 1 CAP ID=CdsExt C= 0.0001 56 pF CdsExt 3 CAP ID=CgG round1 C= 0.051 24 pF CgGround1 IND ID=Is L =0.0 3655 nH Is CAP ID= CgGround2 C=0.02196 pF CgGround2 Rs RES ID=Rs R= 0.748 1 Oh m IND ID= IsExt L=0.0072 nH IsExt PO RT P=3 Z=50 Ohm Figure 1 Schematic of fitted model including external parasitics Mark Holm 3 Filtronic Confidential FPD6836 FPD6836 TOM3 and TOM2 Models 24/01/2005 Shown below is a table of the external parasitics. CdGround1 CdGround2 CgGround1 CgGround2 IdExt Id IgExt 0.024 pF 0.057 pF 0.01224 pF 0.121 pF 0.2754 nH 0.152 nH 0.2907 nH Ig IsExt Is Rd Rs Rg CdsExt 0.116 nH 0.0542 nH 0 nH 1.89 1.768 1.466 0.000156 pF Table 1 External parasitic values Mark Holm 4 Filtronic Confidential FPD6836 FPD6836 TOM3 and TOM2 Models 24/01/2005 TOM3 Model Parameters The TOM3 model employs an excellent form for the charge relation within the pHEMT discrete. Shown below are the extracted parameters for the FPD6836 FPD6836 device: VTO ALPHA BETA LAMBDA GAMMA Q K VST MST ILK PLK QGQH QGSH QGDH QGIO QGQL QGAG QGAD QGCL QGGB -0.6448 V 1.83566 0.0005841 -0.01603 0.03528 0.788782 4.15391 0.03797 0.212655 1.8E-6 mA 1.5 V 8.9603E-16 9603E-16 8.2027E-16 2027E-16 1.0396E-17 0396E-17 2.00161E-6 00161E-6 9.1063E-16 1063E-16 2.30006 2.11351 7.9467E-17 9467E-17 144.459 QGG0 CDS IS EG N XTI TAU VBI TAU_GD KGAMMA RG RGSH RD RS LS LG LD NG W 1.50476E-16 50476E-16 0.000276 pF 1E-11 1E-11 mA 0.8 V 1 2 0.001 ns 1V 1000 ns 0.01364 0.01 0 0.01 0.01 0 nH 0 nH 0 nH 6 60 Table 2 TOM3 Model Parameters Add these parameters to the TOM3 model placed within the external parasitics. Mark Holm 5 Filtronic Confidential FPD6836 FPD6836 TOM3 and TOM2 Models 24/01/2005 TOM2 Model Parameters The TOM3 model evolved from the TOM3 model and hence share almost exactly the same form for the calculation of the non-linear current. The TOM2 model only employs a simple charge form and hence should only be used when TOM3 components are not available. Shown below are the extracted elements for the FPD6836 FPD6836 device: VTO ALPHA BETA GAMMA DELTA Q NG ND TAU RG RGSH RD RS IS N VBI VDELTA -0.64473 V 2.42 0.0006001 0.01384 10.6 0.788782 5 0 0.001 0.01 0 0.01 0.01 1E-11 1E-11 mA 1 1V 0.2 V VMAX CGD CGS CDS RIS RID VBR RDB CBS LS LG LD AFAC NFING EG XTI 0.95 V 6.85E-5 85E-5 pF 0.002497 pF 0.000276 pF 0.01 0.01 17 V 1.3E5 1500 pF 0 nH 0 nH 0 nH 360 6 0.8 2 Table 3 TOM2 Model Parameters Add these parameters to the TOM2 model placed within the external parasitics. Mark Holm 6 Filtronic Confidential FPD6836 FPD6836 TOM3 and TOM2 Models 24/01/2005 Results TOM2 IV 150 p5 Current (mA) 100 p4 p3 50 p2 p1 0 p1: Vstep = -1 V -50 p2: Vstep = -0.75 V p3: Vstep = -0.5 V p4: Vstep = -0.25 V p5: Vstep = 0 V 0 2 4 6 8 10 Voltage Figure 2 - Fitted vs. Modelled IV curves for the TOM2 model Sparm Mid 2. 0 6 0. 0.8 1.0 Swp Max 28GHz 0. 0 3. 4 0 4. 5.0 0.2 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0.4 0 0.2 10.0 -10.0 2 -0. 4. 0 -5. 0 -3 .0 -1.0 -0.8 .0 -2 .4 -0 .6 -0 Swp Min 0.25GHz Figure 3 - Fitted vs. Modelled S-parameters for the TOM2 model (biased at Vg=-0.3V Vd=7V) Mark Holm 7 Filtronic Confidential FPD6836 FPD6836 TOM3 and TOM2 Models 24/01/2005 Results TOM3 IV 150 p5 Current (mA) 100 p4 p3 50 p2 p1 0 p1: Vstep = -1 V -50 p2: Vstep = -0.75 V p3: Vstep = -0.5 V p4: Vstep = -0.25 V p5: Vstep = 0 V 0 2 4 6 8 10 Voltage Figure 4 - Fitted vs. Modelled IV curves for the TOM3 model Sparm Mid 2. 0 6 0. 0.8 1.0 Swp Max 28GHz 0. 0 3. 4 0 4. 5.0 0.2 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0.4 0 0.2 10.0 -10.0 2 -0. 4. 0 -5. 0 -3 .0 -1.0 -0.8 .0 -2 4 -0 .6 . -0 Swp Min 0.25GHz Figure 5 - Fitted vs. Modelled S-parameters for the TOM3 model (biased at Vg=-0.3V Vd=7V) Mark Holm 8 Filtronic Confidential