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Part : FPD2001 Supplier : Newport Electronics Manufacturer : Newark element14 Stock : - Best Price : $1575.00 Price Each : $1575.00
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FPD200 Datasheet

Part Manufacturer Description PDF Type
FPD200 Filtronic General Purpose pHEMT Original
FPD2000AS Filtronic 2w Packaged Power pHEMT Original
FPD2000AS-EB Filtronic 2W PACKAGED POWER PHEMT Original
FPD2000V Filtronic 2w Power pHEMT Original
FPD200P70 Filtronic Hi-frequency Packaged pHEMT Original

FPD200

Catalog Datasheet MFG & Type PDF Document Tags

FPD200 DIE

Abstract: ) FPD200-000 Small Quantity (25) Rev A1 DS090519 FPD200-000SQ Sample Quantity (3) FPD200-000S3 , FPD200 FPD200General Purpose pHEMT Die GENERAL PURPOSE pHEMT DIE Package Style: Bare Die Product Description Features The FPD200 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility , FPD200 Absolute Maximum Ratings1 Parameter Rating ESD sensitive device. Unit Exceeding any , , contact RFMD at or . Rev A1 DS090519 FPD200 Typical Measured Performance FPD200 Biased @ 5V
RF Micro Devices
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FPD200 DIE FPD200G 22-A114 MIL-STD-1686 MIL-HDBK-263

FPD200

Abstract: FPD200 DIE . Ordering Information Delivery Quantity Ordering Code Full Pack (100) FPD200-000 Small Quantity (25) Rev A1 DS090519 FPD200-000SQ Sample Quantity (3) FPD200-000S3 7628 Thorndike Road , FPD200 FPD200General Purpose pHEMT Die GENERAL PURPOSE pHEMT DIE Package Style: Bare Die Product Description Features The FPD200 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility , sales-support@rfmd.com. 1 of 6 FPD200 Absolute Maximum Ratings1 Parameter Rating Caution! ESD sensitive
RF Micro Devices
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bjt 137

FPD200

Abstract: FPD200 TOM3 and TOM2 Models 24/01/2005 Modelling Report FPD200 TOM3 and TOM2 Models , FPD200 TOM3 and TOM2 Models 24/01/2005 Introduction This report describes the models for the FPD200 discrete p-HEMT device. The models coupled with package models (given elsewhere). The model , this model only be used when the TOM3 component is not present. 2 FPD200 TOM3 and TOM2 Models 24/01/2005 TOM3 Model The TOM3 model was extracted for the FPD200 discrete part is shown below
Filtronic
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FPD200

Abstract: MIL-HDBK-263 FPD200 Datasheet v3.0 GENERAL PURPOSE PHEMT DIE LAYOUT: FEATURES: · · · · · 19 dBm , Stable Gain at 18 GHz 45% Power-Added Efficiency GENERAL DESCRIPTION: The FPD200 is an AlGaAs , Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com Website: www.filtronic.com FPD200 , : sales@filcs.com Website: www.filtronic.com FPD200 Datasheet v3.0 TYPICAL MEASURED PERFORMANCE : FPD200 Biased @ 5V, 27mA FPD200 Biased @ 8V, 27mA 35 MSG S21 MSG (dB) 30 25 20 MSG S21
Filtronic
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S21/S12

FPD200

Abstract: FPD200 DIE FPD200 GENERAL PURPOSE PHEMT DIE FEATURES: · · · · · 19 dBm Output Power (P1dB) 12 dB Power Gain , Efficiency Datasheet v2.1 LAYOUT: GENERAL DESCRIPTION: The FPD200 is an AlGaAs/InGaAs pseudomorphic , Email: sales@filcs.com Tel: +44 (0) 1325 301111 Website: www.filtronic.com FPD200 Datasheet , : sales@filcs.com Tel: +44 (0) 1325 301111 Website: www.filtronic.com FPD200 Datasheet v2.1 TYPICAL MEASURED PERFORMANCE : FPD200 Biased @ 5V, 27mA MSG S21 MSG (dB) 35 30 25 20 15 10 5 0 35 30
Filtronic
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22A114

FPD200

Abstract: 400x400 FPD200 GENERAL PURPOSE PHEMT · · DRAIN BOND PAD (1X) FEATURES 19 dBm Linear Output Power at 12 GHz 12 dB Power Gain at 12 GHz 17 dB Maximum Stable Gain at 12 GHz 12 dB Maximum , The FPD200is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a , structure and processing have been optimized for reliable mediumpower applications. The FPD200 also features , Revised: 11/17/04 Email: sales@filcsi.com FPD200 GENERAL PURPOSE PHEMT · ABSOLUTE MAXIMUM
Filtronic
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400x400

Filtronic

Abstract: EUDYNA FILTRONIC COMPOUND SEMICONDUCTORS PRODUCT CROSS-REFERENCE GUIDE DISCRETE (UNPACKAGED) DEVICES Filtronic P/N FPD3000 FPD2250 FPD1500 FPD1050 FPD750 FPD6836 FPD200 FPD7612 Note 1: Excelics EPA240B EPA160B EPA120E EPA120A EPA080A EPA030C EPA018A EPA018A MwT MwT-PH15 MwT-PH16 MwT-H9 MwT-PH7 MwT-S7 Agilent Fujitsu (Eudyna) Note 1 FLK207XV FLC157XP FLK107XV FLC087XP FLK057XV FLK027XV FLK017XP FLK017XP Mitsubishi Triquint TGR4250-SCC TGF4240-SCC TGF4230-SCC
Filtronic
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Filtronic EUDYNA ph15 transistor Compound Cross-Reference for EPA240 T-PH15 T-PH16

P 9806 AD

Abstract: devices such as the FPD2000AS. The recommended 350mA bias point is nominally a Class AB mode. A small , Code Reel of 1000 FPD2000AS Bag of less than 25 FPD2000ASSQ Reel of 100 12 of 12 FPD2000ASSB Bag of 25 FPD2000ASSR 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or , FPD2000AS FPD2000AS 2W Packaged Power pHEMT 2W PACKAGED POWER pHEMT RoHS Compliant and Pb-Free Package: 4.4mmx3.8mm Product Description Features The FPD2000AS is a packaged depletion
RF Micro Devices
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P 9806 AD J-STD-020C 880MH EB-2000AS-AB EB-2000AS-AA EB-2000AS-AD EB-2000AS-AG

fpd2000as

Abstract: FPD200 for depletion-mode devices such as the FPD2000AS. The recommended 350mA bias point is nominally a , ) EB2000AS-AH Quantity Ordering Code Reel of 1000 FPD2000AS Reel of 100 FPD2000ASSR Bag of 25 Rev A1 DS090612 FPD2000ASSQ Bag of 5 FPD2000ASSB 7628 Thorndike Road, Greensboro , FPD2000AS FPD2000AS 2W Packaged Power pHEMT 2W PACKAGED POWER pHEMT Package Style: AS Product Description Features The FPD2000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic
RF Micro Devices
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InP HBT transistor low noise CB100 FPD20 RO4003 EB2000AS-AB EB2000AS-AA EB2000AS-AD EB2000AS-AG

EV-SP-000044-001

Abstract: IPC 9701 of 1000 FPD2000AS Reel of 100 FPD2000ASSR Bag of 25 FPD2000ASSQ Bag of 5 , voltage supply for depletion-mode devices such as the FPD2000AS. The recommended 350mA bias point is , FPD2000AS FPD2000AS 2W Packaged Power pHEMT 2W PACKAGED POWER pHEMT NOT FOR NEW DESIGNS , Available Usable Gain to 4GHz SI GN S The FPD2000AS is a packaged depletion mode AlGaAs/InGaAs , sales-support@rfmd.com. 1 of 12 FPD2000AS Absolute Maximum Ratings1 Parameter Rating Caution! ESD
RF Micro Devices
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EV-SP-000044-001 IPC 9701 cw 7687 A114 es W2020 DS100125

NBB-502

Abstract: cxe-2089 FPD3000SOT89 FPD1500SOT89E FPM21500QFN FPM2750QFN FPD750SOT89E FPD7612P70 FPD200P70 2011-2012 â
RF Micro Devices
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NBB-502 cxe-2089 VCO-102 spf-5189 RF5643wda

pnp-1500-p22

Abstract: UMZ-1147-R16-G Typical 1.85 GHz Performance Part Number FPD1050SOT89 FPD200P70 FPD3000SOT89 FPD6836P70 , -89 SOT-89 SOT-89 SOT-89 RF5110G FPD1000AS FPD2000AS SGA-8543Z SPA-1426Z SPA-1318Z SPA , ) Package (dim. in mm) FPD200 FPD6836 FPD7612 FPD750 FPD1050 FPD1500 FPD2250 FPD3000 1000 to
RF Micro Devices
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pnp-1500-p22 UMZ-1147-R16-G RF5632 SPA-1002-27H UMX-254-D16-G spf-5189z

RF5632

Abstract: PNP-1090-P22 Typical 1.85 GHz Performance Part Number FPD1050SOT89 FPD200P70 FPD3000SOT89 FPD6836P70 , FPD1000AS FPD2000AS SGA-8543Z SPA-1426Z SPA-1318Z SPA-1526Z SPA-2118Z SPA-2318Z SPB-2026Z SUF , ) FPD200 FPD6836 FPD7612 FPD750 1000 to 28000 1000 to 24000 2000 to 28000 1000 to 20000 17.0
RF Micro Devices
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PNP-1090-P22 UMX-333-D16-G RF1194 UMX-406-D16 SPF-5043Z RF1126

b 857 W3

Abstract: fpd200p70 require a regulated negative voltage supply for depletion-mode devices such as the FPD200P70. For , FPD200P70 HIGH FREQUENCY PACKAGED PHEMT PACKAGE FEATURES: · · · · · · Data sheet v2 , 45% Power-Added Efficiency Useable Gain to 26 GHz RoHS GENERAL DESCRIPTION: The FPD200P70 is , : www.filtronic.com FPD200P70 Preliminary Datasheet v2.3 1 ABSOLUTE MAXIMUM RATING : PARAMETER SYMBOL , Email: sales@filcs.com Website: www.filtronic.com FPD200P70 Preliminary Datasheet v2
Filtronic
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18GHZ b 857 W3 transistor marking code 1325 TL11 TL22 filtronic Solid State 85GHZ EB200P70-AJ

A114

Abstract: A115 Operation / Plated Source Thru-Vias FPD2000V 2W POWER PHEMT DRAIN BOND PAD (2X) GATE BOND PAD , (µm): >70 x 70 The FPD2000V is a discrete depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), optimized for power applications in L- and C-Bands. The FPD2000V includes , Voltage: From 5V to 10V Quiescent Current: From 25% IDSS to 55% IDSS · FPD2000V ABSOLUTE , FPD2000V 2W POWER PHEMT · APPLICATIONS NOTES & DESIGN DATA Applications Notes are available from
Filtronic
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JESD22 A114 A115 Au Sn eutectic

vp 3082

Abstract: transistor marking code 1325 DESCRIPTION FPD2000AS Packaged pHEMT FPD2000AS-EB Packaged pHEMT evaluation board EB , , but will require a regulated negative voltage supply for depletion-mode devices such as the FPD2000AS. , FPD2000AS Datasheet v2.4 2W PACKAGED POWER PHEMT FEATURES: · · · · · · · PACKAGE , : GENERAL DESCRIPTION: · The FPD2000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High , Email: sales@filcs.com Website: www.filtronic.com FPD2000AS Datasheet v2.4 1 ABSOLUTE
Filtronic
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vp 3082 MARKING W1 AD PHEMT marking code a EB-2000AS-AE EB-2000AS-AF EB-2000AS-AH MILHDBK-263

FPD200P70

Abstract: FPD200P70SR FPD200P70-AJ Quantity Ordering Code Reel of 1000 FPD200P70 Reel of 100 FPD200P70SQ Bag of 5 Rev A1 DS090612 FPD200P70SR Bag of 25 FPD200P70SB 7628 Thorndike Road, Greensboro , require a regulated negative voltage supply for depletion-mode devices such as the FPD200P70. For , FPD200P70 FPD200P70 High Frequency Packaged pHEMT HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD200P70 is a packaged depletion mode AlGaAs/InGaAs
RF Micro Devices
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l420
Abstract: voltage supply for depletion-mode devices such as the FPD2000AS. ¾ Self-biased circuits employ an , Usable Gain to 4GHz DESCRIPTION AND APPLICATIONS FPD2000AS 2W PACKAGED POWER PHEMT · SEE PACKAGE OUTLINE FOR MARKING CODE The FPD2000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic , FPD2000AS 2W PACKAGED POWER PHEMT Symbol VDS VGS IDS IG PIN TCH TSTG PTOT Comp. 3 Test Conditions , :// www.filcs.com Revised: 02/23/04 Email: sales@filss.com PRELIMINARY FPD2000AS 2W PACKAGED POWER PHEMT Filtronic
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transistor marking code 1325

Abstract: filtronic Solid State DESCRIPTION FPD2000AS Packaged pHEMT FPD2000AS-EB Packaged pHEMT evaluation board EB , require a regulated negative voltage supply for depletion-mode devices such as the FPD2000AS. The , FPD2000AS Datasheet v3.0 2W PACKAGED POWER PHEMT FEATURES: · · · · · · · PACKAGE , : GENERAL DESCRIPTION: · The FPD2000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High , : sales@filcs.com Website: www.filtronic.com FPD2000AS Datasheet v3.0 1 ABSOLUTE MAXIMUM RATING
Filtronic
Original

FPD200P70

Abstract: for depletion-mode devices such as the FPD200P70. For standard Class A operation, a 50% of IDSS bias , Ordering Code Reel of 1000 FPD200P70 Reel of 100 FPD200P70SR Bag of 25 DS100601 FPD200P70SQ Bag of 5 FPD200P70SB 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or , FPD200P70 FPD200P70 High Frequency Packaged pHEMT HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD200P70 is a packaged depletion mode AlGaAs/InGaAs
RF Micro Devices
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Abstract: FILTRONIC COMPOUND SEMICONDUCTORS PRODUCT CROSS-REFERENCE GUIDE DISCRETE (UNPACKAGED) DEVICES Filtronic P/N FPD3000 FPD2250 FPD1500 FPD1050 FPD750 FPD6836 FPD200 FPD7612 Note 1: Excelics EPA240B EPA160B EPA120E EPA120A EPA080A EPA030C EPA018A EPA018A MwT MwT-PH15 MwT-PH16 MwT-H9 MwT-PH7 MwT-S7 Agilent Fujitsu (Eudyna) Note 1 FLK207XV FLC157XP FLK107XV FLC087XP FLK057XV FLK027XV FLK017XP FLK017XP Mitsubishi Triquint TGR4250-SCC TGF4240-SCC TGF4230-SCC -
OCR Scan
Abstract: C3 FPD200 0AS NE W DE L1 33pF L2 SI GN S 3 3pF NO T FO R The -
OCR Scan
T-21-ZS MMBF5484

s11s

Abstract: C3 FPD200 0AS The circuit used was designed using Rogersâ"¢ RO4003 material with a core
ON Semiconductor
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s11s MMBF5484LT1 236AB

marking BJG sot-23

Abstract: MMBF5484LT1 ) Package (dim. in mm) FPD200 FPD6836 FPD7612 FPD750 FPD1050 FPD1500 FPD2250 FPD3000 1000 to
-
OCR Scan
marking BJG sot-23 wire wound IR source MARKING YG SOT-23 MMBF5484LT1/D
Abstract: ) FPD200 FPD6836 FPD7612 FPD750 1000 to 28000 1000 to 24000 2000 to 28000 1000 to 20000 17.0 ON Semiconductor
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