FMM22-05PF 50/60HZ DS100039 338B2

PolarHVTM HiPerFET N-Channel Power MOSFET Phase Leg Topology FMM22-05PF 3 3 VDSS ID25 T1 5 5 RDS(on) trr(max) = = 500V 13A 270m

Advance Technical Information PolarHVTM HiPerFET N-Channel Power MOSFET Phase Leg Topology FMM22-05PF FMM22-05PF 3 3 VDSS ID25 T1 5 5 RDS(on) trr(max) = = 500V 13A 270m 200ns 4 4 T2 ISOPLUS i4-PakTM 1 1 2 2 Symbol Test Conditions Maximum Ratings -55 . +150 150 -55 . +150 TJ TJM Tstg °C °C °C VISOLD 50/60HZ 50/60HZ, RMS, t = 1min, leads-to-tab 2500 ~V TL TSOLD 1.6mm (0.062 in.) from case for 10s Plastic body for 10s 300 260 Mounting force 20.120 / 4.5.27 N/lb. Isolated Tab °C °C FC 1 Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C, RGS = 1M 500 V VGSS VGSM Continuous Transient ± 30 ± 40 V V ID25 TC = 25°C 13 A IDM TC = 25°C, pulse width limited by TJM 55 IA TC = 25°C 22 A EAS TC = 25°C 750 mJ dV/dt IS IDM, VDD VDSS, TJ 150°C 10 V/ns PD TC = 25°C 132 Test Conditions CP Coupling capacitance between shorted pins and mounting tab in the case dS ,dA dS ,dA pin - pin pin - backside metal Silicon chip on Direct-Copper Bond (DCB) substrate - UL recognized package - Isolated mounting surface - 2500V electrical isolation Avalanche rated Low QG Low Drain-to-Tab capacitance Low package inductance W Symbol Features A Weight © 2008 IXYS CORPORATION, All rights reserved Maximum Ratings 5 Advantages Low gate drive requirement High power density Fast intrinsic rectifier Low drain to ground capacitance Fast switching Applications Characteristic Values Min. Typ. Max. 40 1.7 5.5 pF DC and AC motor drives UPS, solar and wind power inverters Synchronous rectifiers Multi-phase DC to DC converters Industrial battery chargers Switching power supplies mm mm 9 g DS100039 DS100039(09/08) FMM22-05PF FMM22-05PF Symbol Test Conditions2 (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250A 500 VGS(th) VDS = VGS, ID = 1mA 3.0 IGSS VGS = ±30 V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 11A, Note 1 gfs VDS = 20V, ID = 11A, Note 1 V 5.0 V ± 100 nA 5 A 250 A TJ = 125°C 270 m 20 S 2630 pF 310 pF 27 Ciss Coss ISOPLUS i4-PakTM Outline pF VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) Resistive Switching Times 22 ns tr VGS = 10V, VDS = 0.5 VDSS, ID = 22A 25 ns td(off) RG = 10 (External) 72 ns tf 21 ns Qg(on) 50 nC 16 nC 18 nC Qgs VGS= 10V, VDS = 0.5 VDSS, ID = 11A Qgd Ref: IXYS CO 0077 R0 0.95 °C/W RthJC RthCS °C/W 0.15 Source-Drain Diode Characteristic Values TJ = 25°C unless otherwise specified) Min. Typ. Max. Symbol Test Conditions3 IS VGS = 0V 13 A ISM Repetitive, pulse width limited by TJM 55 A VSD IF = 22A, VGS = 0V, Note 1 1.5 V 200 ns trr IRM QRM IF = 22A, -di/dt = 100A/s 7.0 A 0.7 VR = 100V, VGS = 0V C Note 1: Pulse test, t 300s, duty cycle, d 2 %. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated objective result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 338B2