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FMG2G400LS60 E209204 - Datasheet Archive
Molding Type Module General Description Fairchild IGBT Power Module provides low conduction as well as short circuit ruggedness.
FMG2G400LS60 FMG2G400LS60 Molding Type Module General Description Fairchild IGBT Power Module provides low conduction as well as short circuit ruggedness. It's designed for the applications such as welder. Features · Short Circuit Rated Time; 10us @ TC =100°C, VGE = 15V · Low Saturation Voltage : VCE(sat) = 1.4 V @ IC = 400A · High Input Impedance · Fast & Soft Anti-Parallel FWD · UL Certified No.E209204 E209204 Package Code : 7PM-IA Application · AC/ DC Welder E1/C2 C1 E2 G1 E1 G2 E2 Internal Circuit Diagram Absolute Maximum Ratings Symbol TC = 25°C unless otherwise noted VCES VGES IC ICM (1) IF IFM PD TSC TJ Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Short Circuit Withstand Time Operating Junction Temperature TSTG Storage Temperature Range VISO Isolation Voltage Power Terminal Screw : M6 Mounting Screw : M6 Mounting Torque @ AC 1minute Units V V A A A A W us °C -40 to +125 @ TC = 25°C @ TC = 100°C FMG2G400LS60 FMG2G400LS60 600 ± 20 400 800 400 800 1136 10 -40 to +150 °C 2500 4.0 4.0 V N.m N.m Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature ©2004 Fairchild Semiconductor Corporation FMG2G400LS60 FMG2G400LS60 Rev. A FMG2G400LS60 FMG2G400LS60 IGBT Symbol TC = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units 600 - - V VGE = 0V, IC = 1mA - 0.6 - V/°C VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V - - 250 ± 100 uA nA 5.0 - 6.5 1.4 8.5 1.8 V V - 0.33 0.3 0.52 2.3 19.5 230 0.41 0.33 0.62 23 320 - us us us us mJ mJ us us us us mJ mJ - us 1200 310 490 - nC nC nC Min. - Typ. 1.9 Max. 2.8 Units - 1.8 - Off Characteristics BVCES BVCES/ TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector Cut-Off Current Gate - Emitter Leakage Current VGE = 0V, IC = 250uA On Characteristics VGE(th) VCE(sat) Gate - Emitter Threshold Voltage Collector to Emitter Saturation Voltage IC = 400mA, VCE = VGE IC = 400A, VGE = 15V Switching Characteristics td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Tsc Short Circuit Withstand Time Qg Qge Qgc Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCC = 300 V, IC = 400A, RG = 10, VGE = 15V, Inductive Load, TC = 25°C VCC = 300 V, IC = 400A, RG = 10, VGE = 15V, Inductive Load, TC = 125°C VCC = 300 V, VGE = 15V 100°C 10 VCE = 300 V, IC =400A, VGE = 15V - @ TC = Electrical Characteristics of DIODE Symbol Parameter VFM Diode Forward Voltage trr Diode Peak Reverse Recovery Current Qrr Test Conditions TC = 25°C IF = 400A TC = 100°C Diode Reverse Recovery Time Irr TC = 25°C unless otherwise noted Diode Reverse Recovery Charge TC = 25°C IF = 400A di / dt = 800 A/us - 90 130 TC = 100°C - 130 - TC = 25°C - 35 46 TC = 100°C - 76 - TC = 25°C - 1580 3000 TC = 100°C - 4940 - V ns A nC Thermal Characteristics Symbol RJC RJC RJC Weight Parameter Junction-to-Case (IGBT Part, per 1/2 Module) Junction-to-Case (DIODE Part, per 1/2 Module) Case-to-Sink (Conductive grease applied) Weight of Module ©2004 Fairchild Semiconductor Corporation Typ. -0.03 360 Max. 0.11 0.18 - Units °C/W °C/W °C/W g FMG2G400LS60 FMG2G400LS60 Rev. A FMG2G400LS60 FMG2G400LS60 Electrical Characteristics of IGBT 3 0 0 Common Emitter VCC = 300V, VGE = ± 15V Rg = 10 TC = 25 TC = 125 - 5 S w it c h i n g T i m e [ u s ] [ A ] Common Emitter VGE = 15V TC = 25 TC = 125 - C C o ll e c t o r C u r r e n t , I FMG2G400LS60 FMG2G400LS60 6 4 0 0 2 0 0 1 0 0 4 T f 3 T o ff 2 1 0 0 0 . 0 0 . 4 0 . 8 1 . 2 1 . 6 2 . 0 C o ll e c t o r - E m it t e r V o lt a g e , V C E 2 0 0 2 . 4 2 5 0 [ V ] 3 0 0 3 5 0 4 0 0 C o ll e c t o r C u r r e n t , I [ A ] C Fig 1. Typical Output Characteristics Fig 2. Turn-Off Characteristics vs. Collector Current 1 . 2 0 . 8 Common Emitter VCC = 300V, VGE = ± 15V Rg = 10 TC = 25 TC = 125 - 1 0 0 0 S w it c h i n g L o s s [ m J ] S w it c h i n g T i m e [ u s ] 1 . 0 T o n 0 . 6 0 . 4 T r 0 . 2 Common Emitter VCC = 300V, VGE = ± 15V Rg = 10 TC = 25 TC = 125 - E o ff 1 0 0 E o n 1 0 0 . 0 2 0 0 2 5 0 3 0 0 3 5 0 4 0 0 2 0 0 2 5 0 C o ll e c t o r C u r r e n t , I [ A ] 3 0 0 3 5 0 4 0 0 C o ll e c t o r C u r r e n t , I [ A ] C C Fig 3. Turn-On Characteristics vs. Collector Current Fig 4. Switching Loss vs. Collector Current 8 2 . 0 S w it c h i n g T i m e [ u s ] 6 1 . 6 5 S w it c h i n g T i m e [ u s ] 7 Common Emitter VCC = 300V, VGE = ± 15V Ic = 400A TC = 25 TC = 125 - T o ff 4 3 T f 2 1 1 0 2 0 3 0 G a t e R e sis t a n c e , R G 4 0 [ ] Fig 5. Turn-Off Characteristics vs. Gate Resistance ©2004 Fairchild Semiconductor Corporation 5 0 Common Emitter VCC = 300V, VGE = ± 15V Ic = 400A TC = 25 TC = 125 - T o n 1 . 2 0 . 8 T r 0 . 4 0 . 0 1 0 2 0 3 0 G a t e R e sis t a n c e , R G 4 0 [ 5 0 ] Fig 6. Turn-On Characteristics vs. Gate Resistance FMG2G400LS60 FMG2G400LS60 Rev. A FMG2G400LS60 FMG2G400LS60 1 5 [ V ] 1 0 0 E o n 1 0 2 0 3 0 4 0 G a t e R e sis t a n c e , R [ G 9 6 3 0 5 0 0 1 0 0 0 0 . 8 1 . 2 V o lt a g e , 1 . 6 V 2 . 0 F [ V ] Fig 9. Forward Characteristics (diode) ©2004 Fairchild Semiconductor Corporation 8 0 0 2 . 4 g 1 0 0 0 1 2 0 0 [ n C ] 1 0 0 Common Cathode di/dt = 800A/ TC = 25 TC = 100 rr F o r w a r d F C u rr e n t, I 2 0 0 F o r w a r d 6 0 0 Fig 8. Gate Charge Characteristics P e a k R e v e r s e R e c o v e r y C u rr e n t, I [ A ] rr [ x 1 0 n s ] R e v e r s e R e c o v e r y T i m e , T [ A ] Common Cathode VGE = 0V TC = 25 TC = 125 0 . 4 4 0 0 G a t e C h a r g e , Q 4 0 0 0 . 0 2 0 0 ] Fig 7. Switching Loss vs. Gate Resistance 3 0 0 o TC = 25 C G E E o ff 1 0 Common Emitter IC = 400A VCC = 300V 1 2 G a t e - E m itt e r V o lt a g e , V S w it c h i n g L o s s [ m J ] 1 0 0 0 Common Emitter VCC = 300V, VGE = ± 15V Ic = 400A TC = 25 TC = 125 - Irr trr 1 0 0 5 0 1 0 0 1 5 0 F o r w a r d 2 0 0 2 5 0 C u rr e n t, I 3 0 0 F 3 5 0 4 0 0 4 5 0 [ A ] Fig 10. Reverse Recovery Characteristics(diode) FMG2G400LS60 FMG2G400LS60 Rev. A FMG2G400LS60 FMG2G400LS60 Package Dimension 7PM-IA 62.0 ±0.60 25.0 ±0.50 48.0 ±0.60 25.0 ±0.50 27.0 ±0.60 4- Ø6.5 ±0.30 Mounting-Hole 15.0 ±0.60 48.5 ±0.50 3-M6 93.0 ±0.50 108.0 ±0.50 8.05 ±0.50 +0.20 32.0 ±0.50 22.45 -0.60 Name Plate Ø1.3 CONVEX 5.95 ±0.60 30.15 -0.60 +0.20 3-14.0 ±0.50 +0.00 2.80 -0.50*0.5t :20~200um 3-22.0 ±0.50 59.8 ±0.50 Dimensions in Millimeters ©2004 Fairchild Semiconductor Corporation FMG2G400LS60 FMG2G400LS60 Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2004 Fairchild Semiconductor Corporation Rev. I11