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FM/TSOP-20

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: ds088_1_1.fm Page 1 Wednesday, June 19, 2002 5:31 PM 0 R DS088 (v1.2) June 7, 2002 , ds088_1_1.fm Page 2 Wednesday, June 19, 2002 5:31 PM R System ACE SC Solution Boundary Scan , Product Specification ds088_1_1.fm Page 3 Wednesday, June 19, 2002 5:31 PM R System ACE SC , ds088_1_1.fm Page 4 Wednesday, June 19, 2002 5:31 PM R System ACE SC Solution Pinout and Pin , Advance Product Specification ds088_1_1.fm Page 5 Wednesday, June 19, 2002 5:31 PM R System ACE Xilinx
Original
XCV50E-6CS144 48-pin TSOP (I) flash memory XCV50E mpm h1 a20 g6 amd CS144 am29lv XC17V01 29LV160D XCCACEM16-CS144-AM 29LV320D XCCACEM32-CS144-AM
Abstract: ds088_05.fm Page 1 Monday, September 24, 2001 3:35 PM 0 R DS088 (v1.0) September 25, 2001 , Advance Product Specification www.xilinx.com 1-800-255-7778 1 ds088_05.fm Page 2 Monday , www.xilinx.com 1-800-255-7778 DS088 (v1.0) September 25, 2001 Advance Product Specification ds088_05.fm , Advance Product Specification www.xilinx.com 1-800-255-7778 3 ds088_05.fm Page 4 Monday , . www.xilinx.com 1-800-255-7778 DS088 (v1.0) September 25, 2001 Advance Product Specification ds088_05.fm Xilinx
Original
AMD 2m flash memory SelectMAP XC17V00 uAM29LV160DT M10a20 FPGA Virtex 6 pin configuration 29LV641D XCCACEM64-CS144-AM
Abstract: . Mounted within 1 year at factory conditions of 30 °C/60 % RH, or b. Stored at 20 % RH. 3. Devices require baking, before mounting, if: a. humidity Indicator Card is >20 % RH when read at 23 °C ± 5 °C, or , within 168 hours at factory conditions of 30 °C/60 % RH, or b. Stored at 20 % RH. 3. Devices require baking, before mounting, if: a. humidity Indicator Card is >20 % RH when read at 23 °C ± 5 °C, or b. 2a , factory conditions of 30 °C/60 % RH, or b. Stored at 20 % RH. 3. Devices require baking, before -
Original
TMS87C510 TL16CFM405 sn10448 TL16CFM405PH tl16cfm504pjm tms87c110 EIA/JEP113-A EIA/JESD22-A112-A 27PC020FM TMS27PC040FM TMS28F512FM TMS28F010FM
Abstract: Active Current · 15 uA Standby Current D E D S N N E G M SI 0 M E 02 O D 28V C E W : FM R E , 12 13 14 15 16 TSOP-I 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 NC , 32,768 x 8 FRAM Array CE D E D S N N E G M SI 0 M E 02 O D 28V C E W : FM R E ive T , 02 O D 28V C E W : FM R E ive T N nat O R lter N O A F Note that the FM18L08 contains a , E G M SI 0 M E 02 O D 28V C E W : FM R E ive T N nat O R lter N O A F Valid Memory Ramtron International
Original
FM18L08-70-TG FM18L08-70-SG FM18L08-70 FM18L08-70-P FM18L08-70-PG FM18L08-70-S 60012T2 FM18L08-70TG B065160012T2 FM28V020
Abstract: . 19 SIGNAL PROCESSING IC FOR VIDEO CAMERA . 20 · SIGNAL PROCESSING IC FOR COLOR VIDEO CAMERA . 20 · SIGNAL PROCESSING IC FOR B/W VIDEO CAMERA . 20 · SINGLE-FUNCTION IC FOR CCD CAMERA . 20 TV VIF/SIF IC , . 27 · FM AUDIO SYSTEM Sony
Original
ILX511 cx20185 UHF FM Transceiver motorola 5118 motorola 5118 uhf CXA1446S Sony Semiconductor SPC500 SPC700 ICX077AL ICX080AK ICX081AK ICX082AL
Abstract: SDRAM Part Numbering System FM X XX XX X X X - XX X X Fidelix Memory Product Family S : SDRAM A : ASM Temperature C : 0~70 S : -10~60(70) E : -25~85 I : -40~85 Core/IO Voltage Device Depth 16 : 16M/2K ref 32 : 32M/2K ref 64 : 64M/4K ref 4A : 128M/4K ref 4B : 256M/4K ref 4S : 256M/4k ref stack 8B : 256M/8K ref 8C : 512M/8K ref Organization 08 : x8 16 : x16 32 : x32 A , *FM: FM will be applied to new products. Previous marked CM will be remained unchanged. Jun. '2008 Fidelix
Original
fidelix 256M/4 166MH 133MH 100MH
Abstract: : 12/15/20/25ns â'¢ One Chip Select plus one Output Enable pin â'¢ Bidirectional data inputs and , ¡ A10 20 â¡ C S 19 â¡ I/ 0 7 25 A l3 C Terminal Voltage with Respect to GND 15 â¡ I/0 , 15 15 mA fM A X (2) Standby Power Supply Current (TTL Level) CS > V ih , Outputs Open, V , 71256SA15 fM A X (2) Standby Power Supply Current (CMOS Level) CS > V h c , Outputs Open, V cc = Max , . fM A x = 1A r c (all address inputs are cycling at fM A x ); f = 0 means no address input lines are -
OCR Scan
IDT71256SA 00EE1E S028-8 0D22133
Abstract: time: 12, 15, 20, 25 ns â'¢ Low active power: 600 m W (typical) â'¢ Low standby power: 500 , C C l/OO [ 13 20 ] I/06 1/01 [ 14 19 ] I/05 A7 C A6 C I/0 2 £ 15 , 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 â¡ â¡ â , 1.5 w IOUT DC Output Current (LOW) 20 mA Notes: 1. Stress greater than those listed , ) -15 ns Min. Max. -20 ns Min. Max. -25 ns Min. Max. Symbol Parameter Test Conditions -
OCR Scan
IS61C1024 IIS61C1024 IS61C1024L IS61C1024L-12JR IS61C1024L-12NR IS61C1024L-12KR
Abstract: . Supports PC3200 modules with 3-3-3 timing 09005aef80a6e50f 256Mbx8x16DDR400.fm - Rev. C 5/03 EN 1 , 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 66 65 64 63 62 61 60 59 58 57 56 55 54 , protrusion is 0.25mm per side. 09005aef80a6e50f 256Mbx8x16DDR400.fm - Rev. C 5/03 EN 2 Micron , DQ and DQS pins. For the x16 DM for DQ0­DQ7 and UDM is a DM for D08­D015. Pin 20 is a NC on x8. Bank , 23, 22, 21 47 20, 47 RAS#,CAS#, WE# DM LDM, UDM Input Input 26, 27 29-31 32, 35, 36 37, 38 Micron Technology
Original
mt46v16m16 die mt46v16m16 rev DDR400B 16M16 MT46V32M8 MT46V16M16 DDR400 16DDR400
Abstract: 22 21 20 19 18 17 GND 1/02 1/01 l/OO A0 A1 A2 A3 n. C PIN DESCRIPTIONS A0-A17 CE1 , > Vcc - 0.2V, V in < 0.2V |oA Isb2 |oA Note: =fM A x , address and data inputs are cycling , fM A x Com. Ind. -70 LL ns Min. Max. 55 Range) -100 LL ns Min. Max. - - - - - - 35 55 300 , - Note: 1. At f = fM A x, address and data inputs are cycling at the maximum frequency, f = , ) Com. (-LL) Ind. (-L) Ind. (-LL) Min. 2.0 - - - - Parameter Vcc for Data Retention Data -
OCR Scan
IS62LV2568L IS62LV2568LL A0-A16 2568L IS62LV2568L-70T IS62LV2568L-70H
Abstract: k 60 40 220 20 80 20 Fm, Excess Phase (°) Am, Gain Margin (dB) 1.0 M VS = , Gain Margin 20 20 0 1.0 0 100 k 10 k 1.0 k Fm, Phase Margin (°) Am, Gain Margin (dB , RL = 10 k RL = 2.0 k VCC = 1.5 V, VEE = -1.5 V RL = 10 k RL = 2.0 k VCC = 2.5 V, VEE = -2.5 V RL = 10 k RL = 2.0 k VOH Input Offset Voltage Temperature Coefficient (RS = 50) TA = Tlow to , RL = 10 k RL = 2.0 k VCC = 1.5 V, VEE = -1.5 V RL = 10 k RL = 2.0 k VCC = 2.5 V, VEE = -2.5 V ON Semiconductor
Original
NCS2002 NCV2002 mosfet 23 Tsop-6 1N4148 NCS2002SN2T1G NCS2002SN2T1 NCS2002SN1T1G NCS2002/D
Abstract: 10 k, CL = 5.0 pf) fm - 60 - Deg Power Bandwidth (VO = 4.0 VPP, RL = 2.0 k, THD = , 80 20 Fm, Excess Phase (°) Am, Gain Margin (dB) VS = ±2.5 V RL = 10 k CL = 10 pF 60 , 20 Fm, Phase Margin (°) Am, Gain Margin (dB) Am, Gain Margin (dB) Phase Margin 80 80 , State Output (VID = + 0.5 V) TA = Tlow to Thigh VCC = 0.45 V, VEE = -0.45 V RL = 10 k RL = 2.0 k VCC = 1.5 V, VEE = -1.5 V RL = 10 k RL = 2.0 k VCC = 2.5 V, VEE = -2.5 V RL = 10 k RL = 2.0 k ON Semiconductor
Original
sot23-6 marking code 018 NCV2002SN1T1 NCS2002SN1T1 marking HE SOT23-6 marking code tc sot23-6 TSOP6 Marking AV
Abstract: /883, FM/883 5962-8852501 -or- 09 UX, XX, YX, ZX AT28C256-30UM/883, DM/883, LM/883, FM/883 5962-8852502 -or- 10 UX, XX, YX, ZX AT28C256-25UM/883, DM/883, LM/883, FM/883 5962-8852503 -or- 11 UX, XX, YX, ZX AT28C256-20UM/883, DM/883, LM/883, FM/883 5962-8852504 -or- 12 UX, XX, YX, ZX AT28C256E-25UM/883, DM/883, LM/883, FM/883 5962-8852505 -or- 13 UX, XX, YX, ZX AT28C256-15UM/883, DM/883, LM/883, FM/883 5962-8852506 -or- 14 UX, XX, YX, ZX AT28C256F-15UM/883, DM/883, LM/883, FM/883 5962-8852507 Atmel
Original
AT28C16 AT28C16E AT28C17 AT28C17E AT28C64 AT28C64E 5962-8852506 at28c16 eeprom AT28C16 DM 5962-3826703 AT28C256F
Abstract: 09005aef80cbb30a TN_48_08.fm - Rev. D 3/04 EN Figure 2: 54-Ball VFBGA x16 x8 x4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 54 53 52 51 50 49 48 , DQ19 DQ20 VSSQ DQ21 DQ22 VDDQ DQ23 VDD 09005aef80cbb30a TN_48_08.fm - Rev. D 3/04 EN , 11 75 12 74 13 73 14 72 15 71 16 70 17 A12 For 512Mb 69 18 68 19 67 20 66 21 A11 , . 09005aef80cbb30a TN_48_08.fm - Rev. D 3/04 EN 3 Micron Technology, Inc., reserves the right to change Micron Technology
Original
TN-48-08 a123 54pin TSOP SDRAM BA1A11 A0-A11 A0-A10 A0-A112 A0-A123 A0-A125
Abstract: PSRAM Part Numbering System FM P XX XX X X X - X XX X X Packing type R : Tape & Reel FIDELIX Memory Temperature Product Family C : 0~70 S : -10~60(70) E : -25~85 I : -40~85 P : Async. PSRAM Device Depth 04 : 4M 08 : 8M 16 :16M 32 : 32M 64 : 64M 12 :128M Speed 45 : 45ns 55 : 55ns 60 : 60ns 70 : 70ns 85 : 85ns Data Width 08 : x8, TOE 09 : x8, TCS 16 : x16 , /2.5V C : 1.8V/1.8V D : 3.0V/2.5V E : 3.0V/1.8V F : 2.5V/1.8V *FM: FM will be applied to new Fidelix
Original
pasr
Abstract: 2gb_nand_salesbrief_m29a_1.fm - Rev. A 12/04 EN 1 Micron Technology, Inc., reserves the right , 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 , : 09005aef817bd2fe/Source: 09005aef817bd429 2gb_nand_salesbrief_m29a_2.fm - Rev. A 12/04 EN 2 Micron Micron Technology
Original
MT29F2G16A micron marking code information micron ecc nand MT29 MT29F2G08A MT29Fxx08x MT29F2G08AA MT29F2G16AA 48-PIN MT29F2G MT29F I/O15
Abstract: 15 16 IS S I 62C 1024 32 ] 31 ] 30 ] 29 ] 28 ] 27 ] 26 ] 25 ] 24 1 23 ] 22 ] 21 ] 20 ] 19 ] 18 ] 17 , 24 23 22 21 20 19 18 17 OE A10 C EÏ I/0 7 I/0 6 I/0 5 I/0 4 I/03 GND I/02 1/01 , Vcc = Max., CE = Vil Iout = 0 mA, f = fM A x Com. Ind. 35L ns Min. Max. 55 65 0.8 1 ISSI Range , 50 75 - 50 75 - 50 75 (iA Note: 1. At f = fM Ax, address and data inputs are , (iA Note: 1. At f = fM A x, address and data inputs are cycling at the maximum frequency, f = -
OCR Scan
PK131 IS62LV1024L IS62LV1024LL PK13197H32 T0Q44G4 PK13197TS32 TGG4404
Abstract: General Description The FM 27LV010 is a low-pow er 1Mbit, 3.3V-only one-tim e-program m able (OTP , . The FM 27LV010 has separate O utput Enable (OE) and Chip Enable (CE) controls which elim i nate bus contention issues. The FM 27LV010 is one m em ber of a low voltage EPROM fam ily which range in densities , Temperature Range (0°C to +70°C) Vcc = 5V ± 10% Parameter/Order Number FM 27LV010 N, T, V 150 L Industrial Temperature Range (-40°C to +85°C) Vcc = 5V ± 10% Parameter/Order Number FM 27LV010 NE, TE, VE -
OCR Scan
FM27LV010L 576-B
Abstract: 09005aef80a6e50f 128Mbx8DDR400.fm - Rev. E 4/03 EN 1 ©2003 Micron Technology, Inc. PRODUCTS AND , # NC BA0 BA1 A10/AP A0 A1 A2 A3 VDD 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 , ; allowable mold protrusion is 0.25mm per side. 09005aef80a6e50f 128Mbx8DDR400.fm - Rev. E 4/03 EN 2 , DQ0-2 DQ3-5 DQ6-7 DQS I/O I/O 4, 7, 10, 13, 14, 16, 17, 20, 20, 25, 42 43, 53, 54, 57, 60, 63 19, 50 3, 9, 15, 55, 61 6, 12, 52, 58, 64 1, 18, 33 4, 48, 66 49 09005aef80a6e50f 128Mbx8DDR400.fm - Micron Technology
Original
MT46V16M8 8DDR400
Abstract: FEATURES · High-speed access time: 12, 15, 20, 25 ns · Low active power: 600 mW (typical) · Low standby , 24 23 22 21 20 19 18 17 OE A10 CEi I/0 7 I/0 6 I/0 5 I/0 4 I/0 3 GND I/0 2 1/01 l/OO A0 A1 A2 , A8 A9 27 ] 26 ] A4 C 8 A3 C 9 A2 [ 25 3 A11 24 3 Ö E 23 22 21 20 19 18 17 10 11 12 13 14 , s tg Pt lOUT ISSI Value -0 .5 to +7.0 -5 5 t o +125 -6 5 to +150 1.5 20 M A X IM U M , ver O perating Symbol Parameter Icci Icc 2 /SSI Range) -20 ns Min. Max. 140 140 170 170 40 60 -
OCR Scan
IS61C1024-20M IS61C 1024L IS61C1024L-20J IS61C1024L-20N IS61C1024L-20K IS61C1024L-20M
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