FLM1314-3F FCSI0499M200 - Datasheet Archive

 

X, Ku-Band Internally Matched FET FEATURES · · · · · · High Output Power: P1dB =

 

FLM1314-3F FLM1314-3F X, Ku-Band Internally Matched FET FEATURES · · · · · · High Output Power: P1dB = 35.0dBm (Typ.) High Gain: G1dB = 5.5dB (Typ.) High PAE: add = 25% (Typ.) Low IM3 = -45dBc@Po = 24.0dBm Broad Band: 13.75 ~ 14.5GHz Impedance Matched Zin/Zout = 50 DESCRIPTION The FLM1314-3F FLM1314-3F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. Fujitsu's stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Condition Symbol Rating Unit Drain-Source Voltage VDS 15 V Gate-Source Voltage VGS -5 V 25.0 W Total Power Dissipation Tc = 25°C PT Storage Temperature Tstg -65 to +175 °C Channel Temperature Tch 175 °C Min. Limit Typ. Max. Unit VDS = 5V, VGS = 0V - 1400 2100 mA Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 13.0 and -1.4 mA respectively with gate resistance of 100. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Saturated Drain Current Symbol IDSS Test Conditions Transconductance gm VDS = 5V, IDS = 900mA - 1300 - mS Pinch-off Voltage Vp VDS = 5V, IDS = 70mA -0.5 -1.5 -3.0 V IGS = -70µA -5.0 - - V 34.0 35.0 - dBm 5.0 5.5 - dB - 900 1100 mA - 25 - % - - ±0.6 dB -42 -45 - dBc Gate Source Breakdown Voltage VGSO Output Power at 1dB G.C.P. P1dB Power Gain at 1dB G.C.P. G1dB Drain Current Power-added Efficiency Gain Flatness Idsr add VDS =10V, IDS = 0.65 IDSS (Typ.), f = 13.75 ~ 14.5 GHz, ZS=ZL= 50 ohm G 3rd Order Intermodulation Distortion IM3 f = 14.5GHz, f = 10 MHz 2-Tone Test Pout = 24.0dBm S.C.L. Thermal Resistance Rth Channel to Case - 5.0 6.0 °C/W Tch 10V x Idsr x Rth - - 66 °C Channel Temperature Rise CASE STYLE: IA Edition 1.2 August 1999 G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level 1 FLM1314-3F FLM1314-3F X, Ku-Band Internally Matched FET OUTPUT POWER & IM3 vs. INPUT POWER 24 Output Power (S.C.L.) (dBc) Total Power Dissipation (W) 30 18 12 6 0 50 100 150 30 28 VDS=10V f1 = 14.5 GHz f2 = 14.51 GHz 2-tone test Pout 26 -15 24 -25 IM3 22 -35 -45 18 200 20 IM3 (dBc) POWER DERATING CURVE -55 Case Temperature (°C) 15 17 19 21 23 Input Power (S.C.L.) (dBm) S.C.L.: Single Carrier Level OUTPUT POWER vs. INPUT POWER OUTPUT POWER vs. FREQUENCY 36 Pin = 31dBm 35 29dBm 34 27dBm 33 32 VDS = 10V f = 14.25 GHz 34 Pout 32 30 30 28 26 add 10 24 25dBm 31 18 20 22 24 26 28 30 32 13.7 13.9 14.1 14.3 Input Power (dBm) 14.5 Frequency (GHz) 2 20 add (%) Output Power (dBm) Output Power (dBm) 36 VDS = 10V P1dB FLM1314-3F FLM1314-3F X, Ku-Band Internally Matched FET S11 S22 +j50 S21 S12 +90° +j100 +j25 14.5 14.3 +j10 14.1 10 25 14.7 14.1 14.5 +j250 13.9 14.7 14.3 14.1 13.7 13.9 13.9 180° 50 14.3 13.7 14.1 14.5 14.3 14.5 14.7 13.55 GHz 13.55 GHz -j10 1 2 3 0° 4 SCALE FOR |S21| SCALE FOR |S12| 0 14.7 13.55 GHz 13.55 GHz 13.7 13.7 13.9 -j250 0.1 -j25 -j100 0.2 -j50 FREQUENCY (MHZ) 1355 1360 1365 1370 1375 1380 1385 1390 1395 1400 1405 1410 1415 1420 1425 1430 1435 1440 1445 1450 1455 1460 1465 1470 -90° S11 MAG .522 .503 .485 .461 .440 .418 .394 .370 .344 .322 .299 .275 .255 .235 .220 .205 .195 .190 .190 .193 .199 .212 .223 .245 ANG 60.0 54.7 49.3 43.5 37.4 31.2 24.4 17.6 10.0 2.1 -6.0 -15.0 -24.8 -35.9 -46.3 -58.6 -71.6 -85.3 -98.6 -111.2 -123.6 -135.6 -146.3 -155.5 S-PARAMETERS VDS = 10V, IDS = 900mA S21 S12 MAG ANG MAG ANG MAG ANG 1.928 1.973 2.012 2.044 2.080 2.114 2.145 2.160 2.181 2.187 2.197 2.196 2.193 2.186 2.174 2.152 2.133 2.107 2.081 2.042 2.021 1.984 1.944 1.909 .527 .511 .496 .475 .458 .438 .419 .398 .376 .355 .333 .318 .297 .278 .263 .245 .232 .219 .209 .205 .204 .206 .205 .211 89.5 84.8 79.6 74.6 69.3 63.7 57.5 50.7 44.2 36.7 29.1 21.3 12.3 3.8 -5.8 -16.4 -27.5 -37.7 -49.3 -60.7 -71.8 -83.4 -93.7 -104.6 -160.3 -165.0 -169.9 -175.0 179.9 174.5 169.3 163.8 158.3 153.1 147.5 142.0 136.5 130.8 125.4 119.9 114.5 109.0 103.7 98.7 93.4 88.3 83.4 78.2 Download S-Parameters, click here 3 .071 .079 .083 .087 .090 .096 .102 .105 .109 .115 .120 .123 .126 .128 .132 .133 .137 .138 .139 .139 .140 .141 .139 .138 -179.5 176.8 171.6 165.4 161.9 156.3 150.8 146.9 139.7 136.8 130.8 127.0 121.4 115.3 110.1 104.5 100.3 94.1 89.4 84.0 79.5 74.9 69.1 65.4 S22 FLM1314-3F FLM1314-3F X, Ku-Band Internally Matched FET 1.5 Min. (0.059) Case Style "IA" Metal-Ceramic Hermetic Package 1 0.1 (0.004) 9.7±0.15 (0.382) 2-R 1.25±0.15 (0.049) 4 2 3 1.8±0.15 (0.071) 1.5 Min. (0.059) 0.5 (0.020) 3.2 Max. (0.126) 13.0±0.15 (0.512) 1.15 (0.045) 0.2 Max. (0.008) 8.1 (0.319) 1. 2. 3. 4. Gate Source (Flange) Drain Source (Flange) Unit: mm(inches) 16.5±0.15 (0.650) For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: · Do not put these products into the mouth. · Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. · Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 1999 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0499M200 FCSI0499M200 4