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FLL200IB-2 Datasheet

Part Manufacturer Description PDF Type
FLL200IB-2 Eudyna Devices L-Band Medium & High Power GaAs FET Original
FLL200IB-2 N/A FET Data Book Scan
FLL200IB-2-E1 Fujitsu FET: P Channel: ID 12 A Original

FLL200IB-2

Catalog Datasheet MFG & Type PDF Document Tags

FLL200IB-3

Abstract: FLL200 FLL200IB-1, FLL200IB-2, FLL200IB-3 L-Band Medium & High Power GaAs FET FEATURES · · · · · , -1, FLL200IB-2, FLL200IB-3 are Power GaAs FETs that are specifically designed to provide high power at L-Band , Breakdown Voltage Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. FLL200IB-1 FLL200IB-2 FLL200IB-3 FLL200IB-1 FLL200IB-2 FLL200IB-3 Drain Current Test Conditions IDSS gm VDS = 5V , Min. - G.C.P.: Gain Compression Point 1 FLL200IB-1, FLL200IB-2, FLL200IB-3 L-Band Medium &
Eudyna Devices
Original
FLL200 059 906 051
Abstract: FLL200IB-1, FLL200IB-2, FLL200IB-3 L-Band Medium & High Power GaAs FETs FEATURES · High Output , FLL200IB-1, FLL200IB-2, FLL200IB-3 are Power GaAs FETs that are specifically designed to provide high power , Channel Tem perature Rise CASE STYLE: IB FLL200IB-2 FLL200IB-3 FLL200IB-1 FLL200IB-2 FLL200IB-3 Idsr ^add , -1, FLL200IB-2, FLL200IB-3 L-Band Medium & High Power GaAs FETs 0 50 100 150 200 Case , p. .t f p q . i +j50 FLL200IB-2 L-Band Medium & High Power GaAs FETs -o- s -0 -21 s 12 -
OCR Scan

1200 - 1400 MHz L-Band Applications

Abstract: FLL200IB-1, FLL200IB-2, FLL200IB-3 L-Band Medium & High Power GaAs FET FEATURES · · · · · High , 34% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL200IB-1, FLL200IB-2 , added Efficiency Thermal Resistance Channel Temperature Rise CASE STYLE: IB FLL200IB-1 FLL200IB-2 FLL200IB-3 FLL200IB-1 FLL200IB-2 FLL200IB-3 Symbol IDSS gm Vp VGSO P1dB Test Conditions VDS = 5V, VGS = 0V , Compression Point Edition 1.2 October 2004 1 FLL200IB-1, FLL200IB-2, FLL200IB-3 L-Band Medium &
Eudyna Devices
Original
1200 - 1400 MHz L-Band Applications

1200 - 1400 MHz, L-Band Applications

Abstract: fujitsu l-band power fets FLL200IB-1, FLL200IB-2, FLL200IB-3 L-Band Medium & High Power GaAs FET FEATURES â'¢ High , FLL200IB-1, FLL200IB-2, FLL200IB-3 are Power GaAs FETs that are specifically designed to provide high power , 10V ids = o.6 loss (Typ.) f=1,5GHz 41.5 42.5 - dBm FLL200IB-2 f=2.3GHz FLL200IB-3 f=2.6GHz Power Gain at 1dB G.C.P. FLL200IB-1 GidB f=1,5GHz 12.0 13.0 - dB FLL200IB-2 f=2.3GHz 10.0 11.0 - dB , .: Gain Compression Point FUJITSU FLL200IB-1, FLL200IB-2, FLL200IB-3 L-Band Medium & High Power GaAs
-
OCR Scan
1200 - 1400 MHz, L-Band Applications fujitsu l-band power fets et 1109 FCSI0598M200

FLL200IB-1

Abstract: FLL200IB-2 FLL200IB-1, FLL200IB-2, FLL200IB-3 L-Band Medium & High Power GaAs FET FEATURES · · · · · , -1, FLL200IB-2, FLL200IB-3 are Power GaAs FETs that are specifically designed to provide high power at L-Band , G.C.P. FLL200IB-1 FLL200IB-2 FLL200IB-3 FLL200IB-1 FLL200IB-2 FLL200IB-3 Drain Current , 2004 Min. - G.C.P.: Gain Compression Point 1 FLL200IB-1, FLL200IB-2, FLL200IB-3 L-Band , 140.7 136.5 131.6 127.5 123.4 121.2 116.4 32.7 FLL200IB-2 L-Band Medium & High Power GaAs
Eudyna Devices
Original

FLL200IB-1

Abstract: FLL200 FLL200IB-1, FLL200IB-2, FLL200IB-3 L-Band Medium & High Power GaAs FET FEATURES · · · · · , -1, FLL200IB-2, FLL200IB-3 are Power GaAs FETs that are specifically designed to provide high power at L-Band , Source Breakdown Voltage Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. FLL200IB-1 FLL200IB-2 FLL200IB-3 FLL200IB-1 FLL200IB-2 FLL200IB-3 Drain Current Test Conditions IDSS gm VDS = 5V , Min. - G.C.P.: Gain Compression Point 1 FLL200IB-1, FLL200IB-2, FLL200IB-3 L-Band Medium &
Fujitsu
Original
Abstract: FLL200IB-1, FLL200IB-2, FLL200IB-3 L-Band Medium & High Power GaAs FET FEATURES â'¢ â'¢ â'¢ â , FLL200IB-1, FLL200IB-2, FLL200IB-3 are Power GaAs FETs that are specifically designed to provide high , Conditions FLL200IB-1 FLL200IB-2 FLL200IB-3 FLL200IB-1 FLL200IB-2 FLL200IB-3 Drain Current VGSO , 1999 Min. - G.C.P.: Gain Compression Point 1 FLL200IB-1, FLL200IB-2, FLL200IB-3 L-Band , 123.4 121.2 116.4 32.7 FLL200IB-2 L-Band Medium & High Power GaAs FET S11 S22 4GHz +j25 Fujitsu
Original
Abstract: Vd S vgs pt FLL200IB-L FLL200IB-2 , FLL200IB-3 Condition Rating 15 -5 Tc = 25°C Unit V V , Transconductance Pinch-off Voltage Gate Source Breakdown Voltage FLL200IB-1 Output Power at 1dB G.C.P. FLL200IB-2 FLL200IB-3 FLL200IB-1 Power Gain at 1dB G.C.P. FLL200IB-2 FLL200IB-3 Drain Current Power added Efficiency , 1997 Microwave Databook L-Band Medium & High Power GaAs b E l s FLL200IB-2 S-PARAMETERS VDs = -
OCR Scan

FLL200IB-1

Abstract: FLL200IB-2 FLL200IB-1, FLL200IB-2, FLL200IB-3 L-Band Medium & High Power GaAs FET FEATURES · · · · · , -1, FLL200IB-2, FLL200IB-3 are Power GaAs FETs that are specifically designed to provide high power at L-Band , Source Breakdown Voltage Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. FLL200IB-1 FLL200IB-2 FLL200IB-3 FLL200IB-1 FLL200IB-2 FLL200IB-3 Drain Current Power added Efficiency Thermal Resistance , G.C.P.: Gain Compression Point 1 FLL200IB-1, FLL200IB-2, FLL200IB-3 L-Band Medium & High Power
Fujitsu
Original

FSX52WF

Abstract: fujitsu "application notes" (FLL200IB-1) f = 2.3 GHz (FLL200IB-2) f = 2.6 GHz (FLL200IB-3) FSX51WF FSX52WF FLL351ME , = 1.5 GHz (FLL200IB-1) f = 2.3 GHz (FLL200IB-2) f = 2.6 GHz (FLL200IB-3) FSX51WF FLL101ME , 9.7 t = 0.65 mm Units: mm 12) FLL200IB-2 APPLICATION f=2.3GHz MATCHING CIRCUIT CD 15 h -2.0
-
OCR Scan
FLL120MK fujitsu "application notes" FMC141401-02 NF037 FLL101 fll171 FMC1414P1-02 FHC40LG FHX04LG FHX05LG FHX06LG FHX14LG FLL171ME

FLL101ME

Abstract: FLL100MK -1 -3. 5 5 480m 4 5 4.8 FLL200IB-2 s±m L-Band PA GaAs/SB n D 15 DS -5 83.3 8typ 12 5 -1 -3. 5 , GSDS FLL2001B-1 Pout=42. 5dBm, Gp=lldBtyp f=l. 5GHz, ldBfiJi^EIS^. 146 GSDS FLL200IB-2
-
OCR Scan
FLK202MH-14 FLL50MK FLM0910-2 FLM0910-4C FLM0910-8C FLM1011-4C FLL100MK FLM1414-4C FLK202MH-14 PA FLK202XV FLL10ME FLL17MB FLL35ME

FLL55

Abstract: FLL101ME FLL101ME FLL171ME FLL351ME FLL55MK FLL120MK FLL200IB-1* FLL200IB-2* FLL200IB-3* FLL300IL-1 FLL300IL
-
OCR Scan
FLU10XM FLL55 flu10 fll300ip-2 FLC253MH-6 FLU17XM FLU35XM FLL300IL-2 FLL300IL-3 FLL300IP-2

FLL57MK

Abstract: ELM7785-60F -2 FLL400IP-2 FLL300IL-1 FLL200IB-1 FLL300IL-2 FLL200IB-2 FLL300IL-3 FLL200IB-3 High Frequency Output , FLU17ZME1 FLU35XM FLU35ZME1 FLL107ME FLL177ME FLL357ME FLL57MK FLL120MK FLL200IB-1 FLL200IB-2 FLL200IB
Sumitomo Electric
Original
ELM7785-60F fll600iq-2 fll177 fll57 FLK027WG fll120 FLL810IQ-4C FLL600IQ-2 FLU10ZME1 FLL810I

FLC301XP

Abstract: FLC301XP equivalent -1 FLL200IB-2 FLL200IB-3 FLL300IL-1 FLL300IL-2 FLL300IL-3 FLL300IP-2 FLC091WF FLC161WF FLC311MG-4 FLC053WG
-
OCR Scan
FLC301XP FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D

348dB

Abstract: FLL357 -1 FLL200IB-2 FLL200IB-3 FLL300IL-1 FLL300IL-2 FLL300IL-3 FLL300IP-2 FLC091WF FLC161WF FLC311MG-4 FLC053WG
-
OCR Scan
FLC167WF 348dB FLL357 CD 294 FLK017XP hemt low noise die FLK102MH-14 FLM1414-3F