FJV4109R FJV3109R 97REF 508REF

FJV4109R Switching Application (Bias Resistor Built In) · Switching circuit, Inverter, Interface circuit, Driver Circuit

FJV4109R FJV4109R FJV4109R FJV4109R Switching Application (Bias Resistor Built In) · Switching circuit, Inverter, Interface circuit, Driver Circuit · Built in bias Resistor (R=4.7K) · Complement to FJV3109R FJV3109R 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Marking Equivalent Circuit C R79 R B PNP Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value -40 Units V VCEO VEBO Collector-Emitter Voltage -40 V Emitter-Base Voltage -5 IC V Collector Current -100 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC= -100µA, IE=0 Min. -40 -40 BVCEO Collector-Emitter Breakdown Voltage IC= -1mA, IB=0 ICBO Collector Cut-off Current Typ. hFE DC Current Gain VCE= -5V, IC= -1mA VCE (sat) Collector-Emitter Saturation Voltage Output Capacitance VCB= -10V, IE=0 f=1MHz fT Current Gain Bandwidth Product VCE= -10V, IC= -5mA R Input Resistor ©2002 Fairchild Semiconductor Corporation µA V IC= -10mA, IB= -1mA Cob Units V -0.1 VCB= -30V, IE=0 Max. 100 600 -0.3 5.5 200 3.2 4.7 V pF MHz 6.2 K Rev. A, August 2002 FJV4109R FJV4109R Typical Characteristics -1000 10k VCE(sat)[mV], SATURATION VOLTAGE hFE, DC CURRENT GAIN VCE = - 5V R = 4.7K 1k 100 IC = 10IB R = 4.7k -100 -10 -1 10 -0.1 -1 -10 -100 IC[mA], COLLECTOR CURRENT -1 -10 -100 IC[mA], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage 400 PC[mW], POWER DISSIPATION 350 300 250 200 150 100 50 0 0 25 50 75 100 125 150 175 o Ta[ C], AMBIENT TEMPERATURE Figure 3. Power Derating ©2002 Fairchild Semiconductor Corporation Rev. A, August 2002 FJV4109R FJV4109R Package Dimensions ±0.10 ±0.10 1.30 0.40 ±0.03 2.40 0.45~0.60 0.20 MIN SOT-23 0.03~0.10 0.38 REF 0.40 ±0.03 +0.05 0.12 0.023 0.96~1.14 0.97REF 97REF 2.90 ±0.10 0.95 ±0.03 0.95 ±0.03 1.90 ±0.03 0.508REF 508REF Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1