500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Search Stock

Shift+Click on the column header for multi-column sorting 
Part
Manufacturer
Supplier
Stock
Best Price
Price Each
Ordering
Part : FHX13LG Supplier : Sumitomo Electric Manufacturer : Component Distributors Stock : 537 Best Price : - Price Each : -
Shipping cost not included. Currency conversions are estimated. 

FHX13LG Datasheet

Part Manufacturer Description PDF Type
FHX13LG Eudyna Devices Super Low Noise HEMT Original
FHX13LG-E1 Fujitsu TRANS JFET N-CH 3.5V 60MA 4SMT Original

FHX13LG

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: FHX13LG, FHX14LG Super Low Noise HEMT FEATURES · Low Noise Figure: 0.45dB (Typ.)@f=12GHz (FHX13 , Available DESCRIPTION The FHX13LG, FHX14LG is a Super High Electron Mobility Transistor(SuperHEMT , Source Breakdown Voltage IDSS gm Vp VGSO Noise Figure FHX13LG Associated Gain , Condition 13.0 - dB - 300 400 °C/W FHX13LG, FHX14LG Super Low Noise HEMT Total , (V) 2 4 FHX13LG, FHX14LG Super Low Noise HEMT NF & Gas vs. IDS FHX13LG 3.0 Gas 2 Eudyna Devices
Original
2-18GH
Abstract: FHX13LG, FHX14LG Super Low Noise HEMT FEATURES · Low Noise Figure: 0.45dB (Typ.)@f=12GHz (FHX13 , Available DESCRIPTION TM The FHX13LG, FHX14LG is a Super High Electron Mobility Transistor , Pinch-off Voltage Gate Source Breakdown Voltage IDSS gm Vp VGSO Noise Figure FHX13LG , Condition 13.0 - dB - 300 400 °C/W FHX13LG, FHX14LG Super Low Noise HEMT Total , (V) 2 4 FHX13LG, FHX14LG Super Low Noise HEMT NF & Gas vs. IDS FHX13LG 3.0 Gas 2 Fujitsu
Original
fujitsu hemt FCSI0598M200
Abstract: FHX13LG, FHX14LG Super Low Noise HEMT FEATURES · Low Noise Figure: 0.45dB (Typ.)@f=12GHz (FHX13 , Available DESCRIPTION TM The FHX13LG, FHX14LG is a Super High Electron Mobility Transistor , Pinch-off Voltage Gate Source Breakdown Voltage IDSS gm Vp VGSO Noise Figure FHX13LG , Condition 13.0 - dB - 300 400 °C/W FHX13LG, FHX14LG Super Low Noise HEMT Total , (V) 2 4 FHX13LG, FHX14LG Super Low Noise HEMT NF & Gas vs. IDS FHX13LG 3.0 Gas 2 Eudyna Devices
Original
low noise hemt FHX*LG low noise hemt transistor
Abstract: FHX13LG, FHX14LG Super Low Noise HEMT FEATURES â'¢ Low Noise Figure: 0.45dB (Typ.)@f=12GHz , Packaging Available DESCRIPTION TM The FHX13LG, FHX14LG is a Super High Electron Mobility , Noise Figure Associated Gain FHX13LG Thermal Resistance VDS = 2V, VGS =0V VDS = 2V, IDS =10mA , Condition 13.0 - dB - 300 400 °C/W FHX13LG, FHX14LG Super Low Noise HEMT Total , (V) 2 4 FHX13LG, FHX14LG Super Low Noise HEMT NF & Gas vs. IDS FHX13LG 3.0 Gas 2 Eudyna Devices
Original
15A03
Abstract: FHX13LG/LP, 14LG/LP Super Low Noise HEMT FEATURES · Low Noise Figure: 0.45dB (Typ.)@f=12GHz , Available DESCRIPTION The FHX13LG/LP, FHX14LG/LP is a Super High Electron Mobility TM Transistor , Voltage Total Power Dissipation Storage Temperature Channel Temperature FHX13LG FHX13LP FHX14LG FHX14LP , V dB dB dB dB ¡C/W FHX13LG/LP 1200 1201 3201 10001 less 3200 10000 over Edition 1.1 July 1999 1 FHX13LG/LP, 14LG/LP Super Low Noise HEMT POWER DERATING CURVE 200 Total Power Fujitsu
Original
FHX13LG/LP
Abstract: Source Breakdown Voltage Noise Figure Associated Gain Noise Figure Associated Gain FHX14LG FHX13LG Symbol , VOLTAGE FUJITSU 1997 Microwave Databook 60 Data Sheets FHX13LG , FHX14LG Low Noise HEMT NF & Gas vs. FREQUENCY FHX13LG NF & Gas vs. Id s FHX13LG 15 m T3, (D i_ ZJ o> L l C D CO C Q c , FHX13LG 1.5 f=12GHz V d S=2V lDS=10mA Gas 15 C D T3, Ç C O OUTPUT POWER vs. INPUT POWER FHX13LG C , Databook F H X 13 L G FHXJ4LG Low Noise HEMT TYPICAL NOISE FIGURE CIRCLE FHX13LG , + j2 5 0 -
OCR Scan
Abstract: FHX13LG, FHX14LG Super Low Noise HEMT FEATURES · Low Noise Figure: 0.45dB (Typ.)@f=12GHz (FHX13 , DESCRIPTION The FHX13LG, FHX14LG is a Super High Electron Mobility Transistor(SuperHEMT) intended for general , dB dB dB °C/W FHX13LG 1200 1201 3201 10001 less 3200 10000 over Edition 1.2 October 2004 1 FHX13LG, FHX14LG Super Low Noise HEMT POWER DERATING CURVE Total Power Dissipation (mW , 0 1 2 4 Drain-Source Voltage (V) 2 FHX13LG, FHX14LG Super Low Noise HEMT NF & Eudyna Devices
Original
Eudyna Packaging
Abstract: FHX13LG/LP, 14LG/LP -Super Low Noise HEMT FEATURES â'¢ Low Noise Figure: 0.45dB (Typ , and Reel Packaging Available DESCRIPTION The FHX13LG/LP, FHX|t|#_G/LP is a Super High Electron , Dissipation Pf 180 mW Storage Temperature FHX13LG Tstg -65 to +175 °C FHX13LP -65 to +150 °C Channel , Gate Source Breakdown Voltage VGSO IGS = -10(iA -3.0 - - V Noise Figure FHX13LG/LP NF - 0.45 0.50 dB , qty. Accept/Reject 125 (0,1) ^ 200 (0,1) QjJ ^-2-FUJITSU FHX13LG/LP, 14LG/LP Super Low Noise HEMT -
OCR Scan
transistor fhx 35 lp fujitsu rf 053 2-18G A 4534 Z150
Abstract: FLR016FH FLR026FH none Case Style 'FH" FHC40LG FHX04LG FHX05LG FHX06LG FHX13LG FHX14LG FHX35LG , stripes and dots given below. Marking Format Part Number Color FHX13LG FHX04LG FHX35LG FHC40LG -
OCR Scan
FMC141401-02 fujitsu gaas marking code Fujitsu K022 FLL300-2 FLL55 FUJITSU L101 MC181901 FMC2122LN-03 FMC2122C6-03 FMC2122P1-02 FMC2122P5-01 FMC2223LN-03
Abstract: LOW NOISE HEMTs Electrical Characteristics (Ta = 25°C) Part Number NF TYP. (dB) 0.30 0.45 0.60 0.75 0.9 1.1 1.2 1.2 Gas TYP. (dB) 15.5 12.5 12.5 10.5 10.5 10.5 10.0 8.5 f (GHz) 4 12 12 12 12 12 12 18 VDS (V) 2 2 2 2 2 2 3 2 ·os (mA) 10 10 10 10 10 10 10 10 Package Type LG/LP LG/LP LG/LP LG/LP Frequency Band C FHC40LG* FHX13LG* FHX14LG* FHX04LG* FHX05LG* FHX06LG* FHX35LG* FHR02FH * LP also available X/Ku LG/LP LG/LP LG/LP FH K LOW NOISE & GENERAL PURPOSE GaAs FETs -
OCR Scan
FSU01LG FSX017LG FSX52WF GaAs HEMTs X band FSXQ17WF FSX51WF
Abstract: NE321000 Closest equivalent Super Low Noise Pseudomorphic HJ FET Fujitsu FHX13LG NE3210S01 Closest -
Original
MRF947T1 equivalent MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME 2SA1977 2SA1978 2SC2351 2SC3355 2SC3357 2SC3545