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Part : FHX04LGT Supplier : FUJITSU Manufacturer : ComSIT Stock : 1,063 Best Price : - Price Each : -
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FHX04LG Datasheet

Part Manufacturer Description PDF Type
FHX04LG Eudyna Devices TRANS JFET 3.5V 4LG Original
FHX04LG Fujitsu FET, P Channel, ID 0.06 A Original
FHX04LG N/A High Frequency Device Data Book (Japanese) Scan
FHX04LG-E1 Fujitsu FET: P Channel: ID 0.06 A Original

FHX04LG

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: FHX04LG, 05LG, 06LG Super Low Noise HEMT FEATURES â'¢ Low Noise Figure: 0.75dB (Typ.)@f=12GHz , Packaging Available DESCRIPTION The FHX04LG, FHX05LG, FHX06LG is a High Electron Mobility Transistor , Gate Source Breakdown Voltage Noise Figure FHX04LG Associated Gain Noise Figure FHX05LG , Unit mA mS V V dB dB dB dB dB dB °C/W FHX04LG, 05LG, 06LG Super Low Noise HEMT POWER , Ambient Temperature (°C) 4 Drain-Source Voltage (V) NF & Gas vs. FREQUENCY FHX04LG NF & Gas Eudyna Devices
Original
FHX04 2-18GH

FHX04LG

Abstract: 2-18G FHX04LG, 05LG, 06LG Super Low Noise HEMT FEATURES · Low Noise Figure: 0.75dB (Typ.)@f=12GHz , Available DESCRIPTION The FHX04LG, FHX05LG, FHX06LG is a High Electron Mobility Transistor(HEMT , Breakdown Voltage Noise Figure FHX04LG Associated Gain Noise Figure FHX05LG Associated Gain Noise , dB dB dB dB dB °C/W FHX04LG, 05LG, 06LG Super Low Noise HEMT POWER DERATING CURVE DRAIN , Drain-Source Voltage (V) NF & Gas vs. IDS FHX04LG NF & Gas vs. FREQUENCY FHX04LG 20 4 3 12
Eudyna Devices
Original
2-18G low noise hemt 12GAS

Eudyna Packaging

Abstract: FHX04 FHX04LG, 05LG, 06LG Super Low Noise HEMT FEATURES · Low Noise Figure: 0.75dB (Typ.)@f=12GHz , Available DESCRIPTION The FHX04LG, FHX05LG, FHX06LG is a High Electron Mobility Transistor(HEMT , Breakdown Voltage Noise Figure FHX04LG Associated Gain Noise Figure FHX05LG Associated Gain Noise , dB dB dB dB dB °C/W FHX04LG, 05LG, 06LG Super Low Noise HEMT POWER DERATING CURVE DRAIN , Drain-Source Voltage (V) NF & Gas vs. IDS FHX04LG NF & Gas vs. FREQUENCY FHX04LG 20 4 3 12
Eudyna Devices
Original
Eudyna Packaging

fujitsu hemt

Abstract: FHX04 FHX04LG/LP, 05LG/LP, 06LG/LP FEATURES â'¢ Low Noise Figure: 0.75dB (Typ.)@f=12GHz (FHX04) â , Available DESCRIPTION The FHX04LG/LP, FHX05LG/LP, FHX06LG/LP is a High Electron Mobility Transistor(HEMT , FHX04LG/LP NF - 0.75 0.85 dB Associated Gain Gas vds = 2V, Ids = 10mA, f = 12GHz 9.5 10.5 - dB Noise , to 10000 315 (1,2) 10001 or over 500 (1,2) Edition 1.1 July 1999 -| FUJITSU FHX04LG/LP, 05LG/LP , '" -0.8V Ambient Temperature (°C) 1 2 3 Drain-Source Voltage (V) NF & Gas vs. FREQUENCY FHX04LG/LP
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OCR Scan
fujitsu hemt 4232 gm CQ 527 FHX04LG/LP FHX04/05/06LG FHX04/05/06LP FCSI0598M200

FHX04LG

Abstract: FHX05LG FHX04LG, 05LG, 06LG Super Low Noise HEMT FEATURES · Low Noise Figure: 0.75dB (Typ.)@f=12GHz , Available DESCRIPTION The FHX04LG, FHX05LG, FHX06LG is a High Electron Mobility Transistor(HEMT , Breakdown Voltage Noise Figure FHX04LG Associated Gain Noise Figure FHX05LG Associated Gain Noise , dB dB dB dB °C/W FHX04LG, 05LG, 06LG Super Low Noise HEMT POWER DERATING CURVE DRAIN , Drain-Source Voltage (V) NF & Gas vs. IDS FHX04LG NF & Gas vs. FREQUENCY FHX04LG 20 4 3 12
Fujitsu
Original
TVRO FHX*LG

fujitsu hemt

Abstract: FHX04LG/LP, 05LG/LP, 06LG/LP Super Low Noise HEMT FEATURES · Low Noise Figure: 0.75dB (Typ , Available DESCRIPTION The FHX04LG/LP, FHX05LG/LP, FHX06LG/LP is a High Electron Mobility Transistor(HEMT , Pinch-off Voltage Gate Source Breakdown Voltage Noise Figure FHX04LG/LP Associated Gain Noise Figure FHX05LG , ) 3201 to 10000 315 (1,2) 10001 or over 500 (1,2) Edition 1.1 July 1999 1 FHX04LG/LP, 05LG/LP , ) NF & Gas vs. FREQUENCY FHX04LG/LP 4 VDS=2V IDS=10mA Noise Figure (dB) Gas 2 10 Noise Figure (dB) 3 15
Fujitsu
Original
Abstract: FHX04LG 05LG, 06LG Low Noise H E M T ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item , Associated Gain Noise Figure Associated Gain Noise Figure Associated Gain FHX06LG FHX05LG FHX04LG Symbol , (V) NF & Gas vs. FREQUENCY FHX04LG NF & Gas vs. Id s 12 11 C Û m m 2, C Û 2, CD Ç , 30 Frequency (GHz) Drain Current (mA) NF & Gas vs. TEMPERATURE FHX04LG 15 E CD OUTPUT , =0.75dB NOISE PARAMETERS FHX04LG v d s =2V, i Ds = io m a Freq. (GHz) 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 -
OCR Scan
4000Q IS21I

FMC141401-02

Abstract: fujitsu gaas marking code FLR016FH FLR026FH none Case Style 'FH" FHC40LG FHX04LG FHX05LG FHX06LG FHX13LG FHX14LG FHX35LG , stripes and dots given below. Marking Format Part Number Color FHX13LG FHX04LG FHX35LG FHC40LG
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OCR Scan
FMC141401-02 fujitsu gaas marking code Fujitsu K022 FLL300-2 FUJITSU L101 FSX52WF MC181901 FMC2122LN-03 FMC2122C6-03 FMC2122P1-02 FMC2122P5-01 FMC2223LN-03

FSX52WF

Abstract: GaAs HEMTs X band LOW NOISE HEMTs Electrical Characteristics (Ta = 25°C) Part Number NF TYP. (dB) 0.30 0.45 0.60 0.75 0.9 1.1 1.2 1.2 Gas TYP. (dB) 15.5 12.5 12.5 10.5 10.5 10.5 10.0 8.5 f (GHz) 4 12 12 12 12 12 12 18 VDS (V) 2 2 2 2 2 2 3 2 ·os (mA) 10 10 10 10 10 10 10 10 Package Type LG/LP LG/LP LG/LP LG/LP Frequency Band C FHC40LG* FHX13LG* FHX14LG* FHX04LG* FHX05LG* FHX06LG* FHX35LG* FHR02FH * LP also available X/Ku LG/LP LG/LP LG/LP FH K LOW NOISE & GENERAL PURPOSE GaAs FETs
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OCR Scan
FSU01LG FSX017LG GaAs HEMTs X band FSXQ17WF FSX51WF

FSX52WF

Abstract: fujitsu "application notes" FHX04LG FHX05LG FHX06LG o c )f= 1 1.7-12.2 GHz NF =0.85 dB Ga= 32dB FHX14LG FHX05LG
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OCR Scan
FLL120MK fujitsu "application notes" NF037 FLL101 fll171 FMC1414P1-02 FLL171ME FLL55MK FLL351ME FLL200IB-1 FLL200IB-2

MRF947T1 equivalent

Abstract: MRF947T1 equivalent transistor Fujitsu FHX04LG NE3210S01 Closest equivalent Super Low Noise Pseudomorphic HJ FET RoHS compliant
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Original
MRF947T1 equivalent MRF947T1 equivalent transistor NJ1006 BFP320 FLL101ME MGF4919G 2SA1977 2SA1978 2SC2351 2SC3355 2SC3357 2SC3545