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FHX*LG

Catalog Datasheet MFG & Type PDF Document Tags

Eudyna Packaging

Abstract: FHX13LG, FHX14LG Super Low Noise HEMT FEATURES · Low Noise Figure: 0.45dB (Typ.)@f=12GHz (FHX13 , DESCRIPTION The FHX13LG, FHX14LG is a Super High Electron Mobility Transistor(SuperHEMT) intended for general , 1 FHX13LG, FHX14LG Super Low Noise HEMT POWER DERATING CURVE Total Power Dissipation (mW , 0 1 2 4 Drain-Source Voltage (V) 2 FHX13LG, FHX14LG Super Low Noise HEMT NF & , (°K) Input Power (dBm) 3 FHX13LG, FHX14LG Super Low Noise HEMT TYPICAL NOISE FIGURE CIRCLE
Eudyna Devices
Original
Eudyna Packaging 2-18GH

FHX13LP

Abstract: FHX14LP FHX13LG/LP, 14LG/LP -Super Low Noise HEMT FEATURES â'¢ Low Noise Figure: 0.45dB (Typ , and Reel Packaging Available DESCRIPTION The FHX13LG/LP, FHX|t|#_G/LP is a Super High Electron , Dissipation Pf 180 mW Storage Temperature FHX13LG Tstg -65 to +175 °C FHX13LP -65 to +150 °C Channel Temperature FHX14LG TCh 175 °C FHX14LP 150 °C *Note: Mounted on Al203 board (30 x 30 x 0.65mm) Fujitsu , Gate Source Breakdown Voltage VGSO IGS = -10(iA -3.0 - - V Noise Figure FHX13LG/LP NF - 0.45 0.50 dB
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OCR Scan
transistor fhx 35 lp fujitsu hemt 2-18G low noise hemt Z150 A 4534 FHX13LG/LP FCSI0598M200

FMC141401-02

Abstract: fujitsu gaas marking code FLR016FH FLR026FH none Case Style 'FH" FHC40LG FHX04LG FHX05LG FHX06LG FHX13LG FHX14LG FHX35LG , stripes and dots given below. Marking Format Part Number Color FHX13LG FHX04LG FHX35LG FHC40LG PURPLE RED BROWN BLACK FHX14LG FHX05LG PURPLE RED FHX06LG RED FSX017LG FSU01LG BLACK
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FMC141401-02 fujitsu gaas marking code Fujitsu K022 FLL300-2 FUJITSU L101 FSX52WF MC181901 FMC2122LN-03 FMC2122C6-03 FMC2122P1-02 FMC2122P5-01 FMC2223LN-03

MRF947T1 equivalent

Abstract: MRF947T1 equivalent transistor Fujitsu FHX04LG NE3210S01 Closest equivalent Super Low Noise Pseudomorphic HJ FET RoHS compliant , Fujitsu FHX05LG NE4210S01 Closest equivalent Super Low Noise Pseudomorphic HJ FET RoHS compliant , NE321000 Closest equivalent Super Low Noise Pseudomorphic HJ FET Fujitsu FHX13LG NE3210S01 Closest , Super Low Noise Pseudomorphic HJ FET Fujitsu FHX14LG NE4210S01 Closest equivalent Super Low Noise , @ 12 GHz Fujitsu FHX35LG NE4210S01 Closest equivalent Super Low Noise Pseudomorphic HJ FET RoHS
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MRF947T1 equivalent MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME 2SA1977 2SA1978 2SC2351 2SC3355 2SC3357 2SC3545
Abstract: FHX35LG Super Low Noise HEMT FEATURES â'¢ Low Noise Figure: 1.2B (Typ.)@f=12GHz â'¢ High , DESCRIPTION The FHX35LG is a High Electron Mobility Transistor(HEMT) intended for general purpose, low noise , FHX35LG Super Low Noise HEMT POWER DERATING CURVE Total Power Dissipation (mW) 300 250 200 LG , -0.8V -1.0V 0 1 2 Drain-Source Voltage (V) 2 3 FHX35LG Super Low Noise HEMT NF , . FREQUENCY FHX35LG Super Low Noise HEMT TYPICAL NOISE FIGURE CIRCLE +j50 +j100 +j25 +j250 +j10 Eudyna Devices
Original

FHX13LP

Abstract: FHX14lp Available DESCRIPTION The FHX13LG/LP, FHX14LG/LP is a Super High Electron Mobility TM Transistor , Voltage Total Power Dissipation Storage Temperature Channel Temperature FHX13LG FHX13LP FHX14LG FHX14LP , FHX13LG/LP, 14LG/LP Super Low Noise HEMT FEATURES · Low Noise Figure: 0.45dB (Typ.)@f=12GHz , ) Symbol IDSS gm Vp VGSO NF Gas NF FHX14LG/LP Gas Rth Condition VDS = 2V, VGS =0V VDS = 2V, IDS =10mA , V dB dB dB dB ¡C/W FHX13LG/LP 1200 1201 3201 10001 less 3200 10000 over Edition 1.1 July
Fujitsu
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FHX14LG/LP

FHX35LP

Abstract: FHX35LG FHX35LG/LP Super Low Noise HEMT FEATURES · · · · · Low Noise Figure: 1.2B (Typ.)@f=12GHz , Reliability Cost Effective Ceramic Microstrip (SMT) Package DESCRIPTION The FHX35LG/LP is a High Electron , Drain-Source Voltage Gate-Source Voltage Total Power Dissipation FHX35LG Storage Temperature Channel Temperature Rating 4.0 -3.0 290 -65 to +175 FHX35LP FHX35LG ¡C -65 to +150 ¡C 175 ¡C , FHX35LG/LP Super Low Noise HEMT POWER DERATING CURVE Total Power Dissipation (mW) 300 250 200
Fujitsu
Original
FHX35LG/LP

15A03

Abstract: FHX13LG, FHX14LG Super Low Noise HEMT FEATURES â'¢ Low Noise Figure: 0.45dB (Typ.)@f=12GHz , Packaging Available DESCRIPTION TM The FHX13LG, FHX14LG is a Super High Electron Mobility , Condition 13.0 - dB - 300 400 °C/W FHX13LG, FHX14LG Super Low Noise HEMT Total , (V) 2 4 FHX13LG, FHX14LG Super Low Noise HEMT NF & Gas vs. IDS FHX13LG 3.0 Gas 2 , Gas vs. FREQUENCY FHX13LG FHX13LG, FHX14LG Super Low Noise HEMT TYPICAL NOISE FIGURE CIRCLE
Eudyna Devices
Original
15A03

low noise hemt

Abstract: transistor hemt FHX35LG Super Low Noise HEMT FEATURES · Low Noise Figure: 1.2B (Typ.)@f=12GHz · High Associated , FHX35LG is a High Electron Mobility Transistor(HEMT) intended for general purpose, low noise and high gain , °C/W 1200 1201 3201 10001 less 3200 10000 over Edition 1.1 July 1999 1 FHX35LG Super , FHX35LG Super Low Noise HEMT NF & Gas vs. FREQUENCY 20 VDS=3V IDS=10mA Noise Figure (dB) Noise Figure , Ambient Temperature (°K) Input Power (dBm) 3 FHX35LG Super Low Noise HEMT TYPICAL NOISE FIGURE
Eudyna Devices
Original
transistor hemt transistor HEMT GaS rf transistor 3742

FHX13LG

Abstract: FHX13 FHX13LG, FHX14LG Super Low Noise HEMT FEATURES · Low Noise Figure: 0.45dB (Typ.)@f=12GHz (FHX13 , Available DESCRIPTION The FHX13LG, FHX14LG is a Super High Electron Mobility Transistor(SuperHEMT , Condition 13.0 - dB - 300 400 °C/W FHX13LG, FHX14LG Super Low Noise HEMT Total , (V) 2 4 FHX13LG, FHX14LG Super Low Noise HEMT NF & Gas vs. IDS FHX13LG 3.0 Gas 2 , Gain (dB) NF & Gas vs. FREQUENCY FHX13LG FHX13LG, FHX14LG Super Low Noise HEMT TYPICAL NOISE
Eudyna Devices
Original

fujitsu hemt

Abstract: FHX35LG FHX35X/002 FHX35LG/002 FEATURES · · · · · High Transconductance Low Leakage Current Low Gate , optical receiver in high speed application. DESCRIPTION The FHX35X/002 Chip and FHX35LG/002 packaged , /002 FHX35LG/002 ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C) Item Drain-Source Voltage , itiA V q S=-2V V d S=3V FHX35X/002 FHX35LG/002 Min. 15 45 -0.2 Limits Min. 40 60 -1.0 10 0.27 , ts FHX35X/002 FHX35LG/002 Low Noise HEM T Fig. 1 Drain Current vs. Drain-Source Voltage
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LOW HEMT low noise hemt transistor FHX35LG/002 35LG/002 35X/0 HX35LGI002

FHX35

Abstract: eudyna FHX35X/002 FHX35LG/002 Low Noise HEMT DESCRIPTION The FHX35X/002 Chip and FHX35LG/002 packaged , 20 nA Gate-Source Capacitance CGS FHX35X/002 - 0.27 - FHX35LG/002 - , =10mA VDS=3V, IDS=10mA 1 Unit pF pF FHX35X/002 FHX35LG/002 Low Noise HEMT Fig. 2 , -0.8V 0.5 FHX35LG/002 0.4 0.3 FHX35X/002 -1.0V 0 1 2 0.2 3 Drain-source , FHX35X/002 FHX35LG/002 Low Noise HEMT BONDING PROCEDURE FOR FET CHIPs Caution must be excercised to
Eudyna Devices
Original
FHX35 eudyna hemt low noise die fujitsu gaas fet
Abstract: Packaging Available DESCRIPTION The FHX04LG, FHX05LG, FHX06LG is a High Electron Mobility Transistor , Gate Source Breakdown Voltage Noise Figure FHX04LG Associated Gain Noise Figure FHX05LG Associated Gain Noise Figure FHX06LG Associated Gain Thermal Resistance AVAILABLE CASE STYLES: LG , FHX04LG, 05LG, 06LG Super Low Noise HEMT FEATURES â'¢ Low Noise Figure: 0.75dB (Typ.)@f=12GHz , Unit mA mS V V dB dB dB dB dB dB °C/W FHX04LG, 05LG, 06LG Super Low Noise HEMT POWER Eudyna Devices
Original
FHX04

FHX13LG

Abstract: fujitsu hemt FHX13LG, FHX14LG Super Low Noise HEMT FEATURES · Low Noise Figure: 0.45dB (Typ.)@f=12GHz (FHX13 , Available DESCRIPTION TM The FHX13LG, FHX14LG is a Super High Electron Mobility Transistor , Condition 13.0 - dB - 300 400 °C/W FHX13LG, FHX14LG Super Low Noise HEMT Total , (V) 2 4 FHX13LG, FHX14LG Super Low Noise HEMT NF & Gas vs. IDS FHX13LG 3.0 Gas 2 , Gas vs. FREQUENCY FHX13LG FHX13LG, FHX14LG Super Low Noise HEMT TYPICAL NOISE FIGURE CIRCLE
Fujitsu
Original

FHX35

Abstract: FHX35LG 11.50 VDS=2V, lDS=10mA, 12GHZ â'¢ FHX35LG ®É : SHF «¡Sftií m : mmmmuo ¡stMm. «ig
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OCR Scan
FHX06FA FHX15FA FHX16FA 10IIA MFGI100

FHX35LG

Abstract: FHX35LP Effective Ceramic Microstrip (SMT) Package DESCRIPTION The FHX35LG/LP is a High Electron Mobility , performance. FHX35LG/LP Super Low Noise HEMT ABSOLUTE MAXIMUM RATING (Ambienl Temperature Ta , Dissipation Pt* 290 mW Storage Temperature FHX35LG Tstg -65 to+175 °C FHX35LP -65 to+150 °C Channel Temperature FHX35LG TCh 175 °C FHX35LP 150 °C *Note: Mounted on Al203 board (30 x 30 x 0.65mm) Fujitsu , 1999 Sample qty. 125 200 315 500 Accept/Reject (0,1) (0,1) (1,2) (1,2) FUJITSU FHX35LG/LP ^^^^^^
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OCR Scan
1 987 280 103 4000Q
Abstract: Associated Gain Noise Figure Associated Gain Noise Figure Associated Gain FHX06LG FHX05LG FHX04LG Symbol , FHX04LG 05LG, 06LG Low Noise H E M T ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item , (V) NF & Gas vs. FREQUENCY FHX04LG NF & Gas vs. Id s 12 11 C Û m m 2, C Û 2, CD Ç , 30 Frequency (GHz) Drain Current (mA) NF & Gas vs. TEMPERATURE FHX04LG 15 E CD OUTPUT , =0.75dB NOISE PARAMETERS FHX04LG v d s =2V, i Ds = io m a Freq. (GHz) 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 -
OCR Scan
IS21I

FHX13LG

Abstract: Source Breakdown Voltage Noise Figure Associated Gain Noise Figure Associated Gain FHX14LG FHX13LG Symbol , VOLTAGE FUJITSU 1997 Microwave Databook 60 Data Sheets FHX13LG , FHX14LG Low Noise HEMT NF & Gas vs. FREQUENCY FHX13LG NF & Gas vs. Id s FHX13LG 15 m T3, (D i_ ZJ o> L l C D CO C Q c , Databook F H X 13 L G FHXJ4LG Low Noise HEMT TYPICAL NOISE FIGURE CIRCLE FHX13LG , + j2 5 0 , F H X 13 LG, FHX14LG Low Noise HEMT Item Drain-Source Voltage Gate-Source Voltage Total Power
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OCR Scan

FSX52WF

Abstract: GaAs HEMTs X band LOW NOISE HEMTs Electrical Characteristics (Ta = 25°C) Part Number NF TYP. (dB) 0.30 0.45 0.60 0.75 0.9 1.1 1.2 1.2 Gas TYP. (dB) 15.5 12.5 12.5 10.5 10.5 10.5 10.0 8.5 f (GHz) 4 12 12 12 12 12 12 18 VDS (V) 2 2 2 2 2 2 3 2 ·os (mA) 10 10 10 10 10 10 10 10 Package Type LG/LP LG/LP LG/LP LG/LP Frequency Band C FHC40LG* FHX13LG* FHX14LG* FHX04LG* FHX05LG* FHX06LG* FHX35LG* FHR02FH * LP also available X/Ku LG/LP LG/LP LG/LP FH K LOW NOISE & GENERAL PURPOSE GaAs FETs
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OCR Scan
GaAs HEMTs X band FSXQ17WF FSX51WF

FHX35LG

Abstract: FHX35 FHX35X/002 FHX35LG/002 Low Noise HEMT DESCRIPTION The FHX35X/002 Chip and FHX35LG/002 packaged , FHX35LG/002 - 0.47 - - 0.035 - Item Symbol Conditions IDSS , VDS=3V IDS=10mA VDS=3V, IDS=10mA 1 Unit pF pF FHX35X/002 FHX35LG/002 Low Noise , 30 -0.4V 20 -0.6V 10 -0.8V 0.5 FHX35LG/002 0.4 0.3 FHX35X/002 -1.0V 0 1 2 , Gate-Source Voltage (V) 2 FHX35X/002 FHX35LG/002 Low Noise HEMT BONDING PROCEDURE FOR FET CHIPs
Fujitsu
Original
Showing first 20 results.