NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: DATA SHEET MOS FIELD EFFECT POWER TRANSISTOR 2SK2135 2SK2135 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2135 2SK2135 is N-channel Power MOS Field Effect Transistor designed for high voltage , (S) Document No. TC-2467 TC-2467 (O.D. No. TC-7998) Date Published November 1993 M Printed in Japan © NEC , Application note name No. Safe operating area of Power MOS FET. TEA-1034 TEA-1034 Application circuit using Power MOS FET. TEA-1035 TEA-1035 Quality control of NEC semiconductors devices. TEI-1202 TEI-1202 Quality control guide of ... | OCR Scan |
8 pages, |
TEA-1035 MEI-1202 2SK2135 nec DI 392 2SK2135 abstract |
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| Abstract: 2SK2135 2SK2135 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2135 2SK2135 is N-channel Power MOS , TC-7998) Date Published November 1993 M Printed in Japan © NEC Corporation 1993 NEC 2SK2135 2SK2135 ELECTRICAL , Application note name No. Safe operating area of Power MOS FET. TEA-1034 TEA-1034 Application circuit using Power MOS FET. TEA-1035 TEA-1035 Quality control of NEC semiconductors devices. TEI-1202 TEI-1202 Quality control guide of ... | OCR Scan |
9 pages, |
TEA-1035 MEI-1202 2SK2135 2SK2135 abstract |
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| Abstract: DATA SHEET MOS FIELD EFFECT POWER TRANSISTOR 2SK2135 2SK2135 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2135 2SK2135 is N-charinel Power MOS Field Effect Transistor designed for high , TC-7998) Date Published November 1993 M © NEC Corporation 1993 Printed in Japan NEC 2SK2135 2SK2135 , Reference Application note name No. Safe operating area of Power MOS FET. TEA-1034 TEA-1034 Application circuit using Power MOS FET. TEA-1035 TEA-1035 Quality control of NEC semiconductors devices. TEI-1202 TEI-1202 Quality control ... | OCR Scan |
8 pages, |
TEA-1035 MEI-1202 2SK2135 2SK2135 abstract |
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| Abstract: b0236 20 V-> 0 1 14 A Eas 392 mj y- KG) O- KK >(D) , A-571 /í9 -MOS O^T TEA-578 TEA-578 xHÄMOS FET TEA-579 TEA-579 IEI-616 IEI-616 NEC^it^/i-f^WffilttaÄM TEM-521 TEM-521 MEI-603 MEI-603 $ i ... | OCR Scan |
8 pages, |
2SK2135 cd 332 m ci tea 2261 NEC C 324 C A571 TRANSISTOR 7824 nec 2501 kk a935 transistor transistor a935 a935 2SK2135 abstract |
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| Abstract: applications and protect both the load and the FET from over-current or short circuit events. They control an , limit ensure that the external MOSFET operates within the FET's Safe Operating Area (SOA). 1 · · Programmable FET Power Limit External N-Channel FET Gate Drive Programmable Fault Timer Open , Current-limit sense input VCC 15 Main power supply input to device and FET GND 16 GND VINP , VCC) gate drive for the external FET. It is controlled by the internal gate drive amplifier, which ... | Original |
56 pages, |
TPS2481 TPS2480 PW20 SLUS939B TPS2480 abstract |
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| Abstract: PRELIMINARY DATA SHEET GaAs MES FET 4W/8W C-BAND POWER GaAs FET NEZ Series 4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS (unit: mm) 0.5�1 The NEZ , POWER-GaAs FET NEZ Series ABSOLUTE MAXIMUM RATINGS (TA = 25 癈) CHARACTERISTIC RATINGS SYMBOL , 2 A V IGD = 15 mA IGD = 30 mA 癈/W Channel to Case 4W/8W C-BAND Power-GaAs FET NEZ , between the gate supply and the FET gate. 3 4W/8W C-BAND POWER-GaAs FET NEZ Series 8W PERFORMANCE ... | Original |
18 pages, |
NEZ7785-4D fet 13187 NEZ3642-4D NEZ3642-8D NEZ4450-4D NEZ4450-8D NEZ5964-4D NEZ5964-8D NEZ6472-4D NEZ7177-4D C-Band Power GaAs FET datasheet abstract |
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| Abstract: PRELIMINARY DATA SHEET GaAs MES FET 4W/8W C-BAND POWER GaAs FET NEZ Series 4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET PACKAGE DIMENSIONS (unit: mm) 0.5±0.1 The NEZ Series of microwave power GaAs , Published June 1996 P Printed in Japan © 1996 4W/8W C-BAND POWER-GaAs FET NEZ Series ABSOLUTE , C-BAND Power-GaAs FET NEZ Series 4W PERFORMANCE SPECIFICATIONS (TA = 25 °C, Z S = ZL = 50 ) IM3 , gate supply and the FET gate. 3 4W/8W C-BAND POWER-GaAs FET NEZ Series 8W PERFORMANCE ... | Original |
20 pages, |
NEZ7785-4D NEZ3642-8D NEZ4450-4D NEZ4450-8D NEZ5964-4D NEZ5964-8D NEZ6472-4D NEZ6472-8D NEZ7177-4D NEZ3642-4D NEZ7177-8D datasheet abstract |
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| Abstract: costeffective alternative in commercial communications systems to discrete FET hybrid or MIC amplifiers. The , -85.33 -80.94 -800.00 -74.51 -95.11 -95.24 -79.98 -80.18 -74.19 -68.60 -63.48 -62.90 -62.76 ... | Original |
4 pages, |
AMMP-6420 AMMP-6420 abstract |
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| Abstract: is the maximum recommended series resistance between the Gate Supply and the FET Gate. TYPICAL , -17.1 S21 MAG 13.187 7.998 3.473 1.846 1.294 1.050 0.982 0.914 0.981 1.047 1.262 1.547 ... | Original |
5 pages, |
NEZ6472-8DL NEZ6472-8D NEZ6472-4DL NEZ6472-4D NEZ6472-15D NEZ6472-15D/15DL NEZ6472-8D/8DL NEZ6472-4D/4DL -15DL NEZ6472-15D/15DL abstract |
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| Abstract: MAX is the maximum recommended series resistance between the Gate Supply and the FET Gate. TYPICAL , 86.3 73.1 60.7 49.0 33.6 19.3 -17.1 MAG 13.187 7.998 3.473 1.846 1.294 1.050 0.982 ... | Original |
5 pages, |
NEZ6472-8DL NEZ6472-8D NEZ6472-4DL NEZ6472-4D NEZ6472-15D NEZ6472-15D/15DL NEZ6472-8D/8DL NEZ6472-4D/4DL -15DL NEZ6472-15D/15DL abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| .25 .129 -26.00 .303 79.98 14.000 .498 66.24 1.814 -62.70 .118 -23.30 .416 73 www.datasheetarchive.com/files/spicemodels/misc/s_parameter_cd/alpha_s2p_files/fet/afm02n8b.s2p |
Spice Models | 29/07/2012 | 1.62 Kb | S2P | afm02n8b.s2p |
| ! SIEMENS Small Signal Semiconductors ! CLY5 ! GaAs Power FET in SOT223 ! VDS = 5 V ID = 400 mA ! Common Source S-Parameters: September 1992 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.100 0.9753 -26.6 13.423 159.9 0.0087 79.0 0.1312 -149.3 0.150 0 .2 10.959 125.5 0.0222 62.2 0.2445 -147.3 0.400 0.7998 -92.3 9.608 111.8 0.0266 57.5 0 www.datasheetarchive.com/files/siemens/ehdata/spar/cly5/y55v0a40-v1.s2p |
Siemens | 10/08/1994 | 2.2 Kb | S2P | y55v0a40-v1.s2p |
| # GHz S MA R 50 ! 15 Sep 1992 / 15:40:04 !CLY10 CLY10 CLY10 CLY10, GaAs Power FET in SOT223 [y13V0A70] ! VDS= 3.00V, ID=700.00mA !f GHZ S11 S21 S12 S22 ! MAG ANG MAG ANG MAG ANG MAG ANG .100 .96702 -46.7 12.5392 152.1 .01013 71.0 .54664 -175.9 .150 .94292 -66.5 11 .6 8.3465 113.8 .02179 49.5 .62497 -179.6 .400 .85369 -130.5 6.7998 102.0 .02484 45 www.datasheetarchive.com/files/siemens/ehdata/spar/cly10/y13v0a70.s2p |
Siemens | 15/09/1992 | 2.37 Kb | S2P | y13v0a70.s2p |
| ! SIEMENS Small Signal Semiconductors ! CLY5 ! GaAs Power FET in SOT223 ! VDS = 5 V ID = 400 mA ! Common Source S-Parameters: September 1992 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.100 0.9753 -26.6 13.423 159.9 0.0087 79.0 0.1312 -149.3 0.150 0 .2 10.959 125.5 0.0222 62.2 0.2445 -147.3 0.400 0.7998 -92.3 9.608 111.8 0.0266 57.5 0 www.datasheetarchive.com/files/infineon/ehdata/spar/cly5/y55v0a40.s2p |
Infineon | 19/02/1996 | 2.2 Kb | S2P | y55v0a40.s2p |
| ! SIEMENS Small Signal Semiconductors ! CLY5 ! GaAs Power FET in SOT223 ! VDS = 5 V ID = 400 mA ! Common Source S-Parameters: September 1992 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.100 0.9753 -26.6 13.423 159.9 0.0087 79.0 0.1312 -149.3 0.150 0 .2 10.959 125.5 0.0222 62.2 0.2445 -147.3 0.400 0.7998 -92.3 9.608 111.8 0.0266 57.5 0 www.datasheetarchive.com/download/44210964-145463ZC/cly5.zip (Y55V0A40.S2P) |
Infineon | 08/09/2000 | 191.27 Kb | ZIP | cly5.zip |
| ! SIEMENS Discrete & RF Semiconductors ! CLY2 ! GaAs Power FET in SCT596 SCT596 SCT596 SCT596 ! VDS = 0.75 V ID = 300 mA ! Common Source S-Parameters: May 1997 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.010 0.9999 -1.7 5.126 178.6 0.0011 78.2 0.5363 -179.9 0 .5 0.6213 -166.0 1.700 0.7998 -130.2 1.800 104.9 0.0765 66.6 0.6224 -165.3 1.800 0 www.datasheetarchive.com/download/64611304-145458ZC/cly2.zip (Y2V75A30.S2P) |
Infineon | 08/09/2000 | 264.8 Kb | ZIP | cly2.zip |
| ! SIEMENS Small Signal Semiconductors ! CF739 CF739 CF739 CF739 ! GaAs Dual Gate FET in SOT143 ! VDS = 5 V VG2S = 0 V ID = 2 mA ! Common Source S-Parameters: May 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.010 0.9999 -0.5 1.064 -179.5 0.0001 93.4 0 .7 1.700 0.8166 -69.1 0.821 78.3 0.0099 61.2 0.9713 -26.4 1.800 0.7998 -73.6 0 www.datasheetarchive.com/files/infineon/ehdata/spar/cf739/c95000b0.s2p |
Infineon | 14/08/1996 | 3.04 Kb | S2P | c95000b0.s2p |
| ! SIEMENS Small Signal Semiconductors ! CF739 CF739 CF739 CF739 ! GaAs Dual Gate FET in SOT143 ! VDS = 5 V VG2S = 0 V ID = 2 mA ! Common Source S-Parameters: May 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.010 0.9999 -0.5 1.064 -179.5 0.0001 93.4 0 .7 1.700 0.8166 -69.1 0.821 78.3 0.0099 61.2 0.9713 -26.4 1.800 0.7998 -73.6 0 www.datasheetarchive.com/download/3140980-145431ZC/cf739.zip (C95000B0.S2P) |
Infineon | 08/09/2000 | 543.36 Kb | ZIP | cf739.zip |
| ! SIEMENS Discrete & RF Semiconductors ! CLY2 ! GaAs Power FET in SCT596 SCT596 SCT596 SCT596 ! VDS = 0.75 V ID = 300 mA ! Common Source S-Parameters: May 1997 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.010 0.9999 -1.7 5.126 178.6 0.0011 78.2 0.5363 -179.9 0 .5 0.6213 -166.0 1.700 0.7998 -130.2 1.800 104.9 0.0765 66.6 0.6224 -165.3 1.800 0 www.datasheetarchive.com/files/infineon/ehdata/spar/cly2/y2v75a30.s2p |
Infineon | 16/05/1997 | 2.76 Kb | S2P | y2v75a30.s2p |
| ! MGFC42V6472A MGFC42V6472A MGFC42V6472A MGFC42V6472A(Ta=25deg. C, VDS=10V, IDS=4.5A) ! 15th/Feb.'99 # GHZ S MA R 50 ! Freq. S11 S21 S12 S22 ! GHz (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) 6.00 0.62 132.80 2.66 -38.82 0.053 -79.98 0.32 -108.40 6.05 0.58 122.28 2.74 -48.40 0.057 -97.49 0.28 -121.76 6.10 0.55 112.97 2.80 -56.36 0.061 -102.75 0.24 -136.52 6.15 0.52 103.62 2.89 -66.76 0.067 -113.36 0.22 -154.19 6 www.datasheetarchive.com/files/spicemodels/misc/s_parameter_cd/mitsubishi/c%20band%20internally%20matched%20power%20gaas%20fet/c42v6742a.s2p |
Spice Models | 29/07/2012 | 2.52 Kb | S2P | c42v6742a.s2p |