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TC255PA Texas Instruments TC255P 336- X 244-Pixel CCD Image Sensor visit Texas Instruments
MSP430-3P-ELPRO-USB-FPA-FET-PGRT Texas Instruments USB-FPA-FET visit Texas Instruments
ISL6146CFRZ-TK Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C visit Intersil Buy
ISL6146AFRZ Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C visit Intersil Buy
ISL6146CFUZ Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C visit Intersil Buy
ISL6146AFUZ-T Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C visit Intersil Buy

FET 336

Catalog Datasheet MFG & Type PDF Document Tags

MA-336-CP

Abstract: fet amplifier schematic INSTRUMENTATION AMPLIFIERS Functional Diagram General Description MA-336 is a dual iow-noise FET input , miMPILOCS SYSTEMS 005164 O V s -336 Low-Noise, Qui-Fet Dual Operational Amplifier , % of standard FET input amplifiers. Lower bias current and offset voltage also results from the QUI-FET process making the MA-336 an ideal replacement for the low noise 072 and 082 types. The output , Section: + IN -fâ'"O +VS -IN O o OUT «-O -vs ORDER-PART NUMBER MA-336-CP EPOXY MOLDED 8
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OCR Scan

MA-336-CP

Abstract: O V m iM PlL O G SYSTEM S 336 005164 p sâ'¬> Low-Noise, Qui-Fet Dual Operational A m plifier General D escription MA-336 is a dual iow-noise FET input operational am plifier using Analog , Circuits And A pplications U tilizing the QUIâ'" FETâ"¢ MAâ'" 336 is the same as applying a standard FET , input am plifiers on a peak-to-peak basis. Input noise current is also reduced to 30% of standard FET , the MA-336 an ideal replacement for the low noise 072 and 082 types. Features The output stage is
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OCR Scan

VLF302510

Abstract: S-8363B max. Nch MOS FET 0.25 typ. VOUT 1.4 V Duty Sn 100%*1 *1 , 2 MOS FET ON *4 RNFET 0.25 1 MOS FET ILSW 0.01 0.5 A , *3. VFB(S) FB *4. MOS FET ON VOUT *5. VOUT STU STU STU 2. *1. 6 , VD VIN VIN ON/OFF VSS 13 5. S-8363 IC Nch MOS FET Nch MOS FET 1 Nch MOS FET OFF Nch MOS FET OFF Nch MOS FET Nch MOS FET IC 1.1 Atyp.ON Duty Nch MOS FET ON
Seiko Instruments
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S-8363B S-8363B-I6T1U2 S-8363B-M6T1U2 VLF302510 LQH3NPN RB161SS MLP2012S2R2M SNT-6ASOT-23-6 PG006-A-P-SD PG006-A-C-SD PG006-A-R-SD PG006-A-L-SD

ltc3755

Abstract: sw2800 + 336 36 FET 95 4x5 DFN-16 TSSOP-16 LT3755/-1 3000:1 PWM 5 x 1A + 4.540 75 FET 96 3x3 QFN-16 MSOP-16E LT3756 3000:1 PWM 5 x 1A + 6100 , 5x7 QFN-38 LTC3783 3000:1 PWM 10:1 10 x 1A 336 36 FET 93 4x5 DFN , 6 x 1A 336 36 FET 85 4x5 DFN-16 TSSOP-16 LT3755/-1 3000:1 PWM 10 , -38 LTC3783 SEPIC/ 3000:1 PWM 10:1 6 x 1A 336 FET FET 85 4x5 DFN-16 TSSOP
Linear Technology
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LT3755 ltc3755 sw2800 50WLED LT1618 LTC3452 I-20041 SE-164

XC601B

Abstract: fet e22 - level, and with the externally connected FET switched off, charging stops. Conversely, and in relation , FET is switched on. Over-discharge detection and release operations When the voltage between VDD - GND , level, and with the externally connected FET switched off, discharging stops. When detecting , pin changes from the GND level to the VDD level and the FET is switched on. Over-charge and , changes from the VDD level to the GND level, and with the externally connected FET switched off, output
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XC601B fet e22 diode marking e41 diode zener ZD 103 marking 601b XC601BN105 XC601BN110 XC601BN205 XC601BN210 XC601BN305

Varistor RU

Abstract: SE110N Purpose) MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET Page Part No. 2SK2778 MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET Diode (SBD , ) Diode (Fast Recovery Rectifier) Avalanche Diode (with Built-in Thyristor) Axial MOS FET MOS FET MOS FET
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2SA2003 Varistor RU SE110N transistor 2SC5487 SE090N 2SA1186 2SA1215 2SA1216 2SA1262 2SA1294 2SA1295
Abstract: L-Band GaAs Power FET · · · , change without notice. L-Band GaAs Power FET ° ° , change without notice. L-Band GaAs Power FET ! " "# , / /( (63 /3/(/0 (0> 0(336 (/0 (006 (66 !/00(>> /( (62 /23(2 (// 6(2 , / (230 3(// (/0 !//(336 (0 !/3(/2 (/ (6 /( (02 (032 (/ !/6(2/ (0 Hexawave
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SE012

Abstract: SE140N Purpose) MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET Page Part No. 2SK2778 MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET Diode (SBD , ) Diode (Fast Recovery Rectifier) Avalanche Diode (with Built-in Thyristor) Axial MOS FET MOS FET MOS FET
Sanken Electric
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SE012 SE140N SE115N diode sta474a SE090 2SA1303 2SA1386 2SA1386A 2SA1488 2SA1488A 2SA1492

S-8363B

Abstract: RB161SS · 95 A PWM / PFM 88 · / · · N MOS FET · () · , 2 MOS FET ON*4 RNFET 0.25 1 MOS FET ILSW 0.01 0.5 A , . " 6 " 6 *2. VOUT(S) VFB(RFB1, RFB2) " " *3. VFB(S) FB *4. MOS FET ONVOUT , VIN ON/OFF VSS 13 5. S-8363 IC N MOS FET N MOS FET 1 N MOS FET OFF N MOS FET OFF N MOS FET N MOS FET IC 1.1 A () ON Duty N MOS FET ON VIN VOUT ON
Seiko Instruments
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1-23AL lqm2hpn2r2mg0 MP006-A-P-SD MP006-A-C-SD MP006-A-R-SD PG006-A-R-SD-1 PG006-A-L-SD-3 MP006-A-P-SD-1

2SC5586

Abstract: transistor 2SC5586 (Darlington) for Audio Output/General Purpose) MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET , 2SK3199 2SK3200 2SK3332 2SK3460 MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET Type Page 22 20 AG01 AG01A AG01Y AG01Z AK 03 AK 04 AK 06 AK 09
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TFD312S-F 2SC5586 transistor 2SC5586 diode RU 3AM microwave oven diode single phase bridge rectifier IC with output 1A Dual MOSFET 606 2SA1493 2SA1494 2SA1567 2SA1568 2SA1667 2SA1668
Abstract: FLL400IP-3 L-Band Medium & High Power GaAs FET FEATURES · · · · · Push-Pull Configuration High , FET that employs a push-pull design that offers ease of matching, greater consistency and a broader , Compression Point Edition 1.3 July 1999 1 FLL400IP-3 L-Band Medium & High Power GaAs FET OUTPUT , GaAs FET S-PARAMETERS VDS = 12V, IDS = 2.0A FREQUENCY (MHZ) 500 600 700 800 900 1000 1100 1200 1300 , 64.6 57.4 50.0 43.8 38.5 34.4 31.2 25.4 21.7 16.4 13.7 10.3 5.8 28.3 27.5 30.8 33.6 31.7 31.1 -8.6 Fujitsu
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FCSI0598M200
Abstract: High Power GaAs FET Push-Pull Configuration High Power Output: 35W (Typ.) High PAE: 43% (Typ , at 12V DESCRIPTION The FLL400IP-3 is a 35 Watt GaAs FET that employs a push-pull design that , - Fujfrsu FLL400IP-3 L-Band Medium & High Power GaAs FET OUTPUT POWER & rjadd vs. INPUT POWER , Power GaAs FET S-PARAMETERS V DS = 12V, lDS = 2.0A FREQUENCY (MHZ) 500 600 700 800 900 1000 , .014 .016 28.3 27.5 30.8 33.6 31.7 31.1 -8.6 26.2 23.3 21.4 20.7 15.2 9.4 5.2 -1.1 -
OCR Scan

FLL400IP-3

Abstract: eudyna GaAs FET Amplifier FLL400IP-3 L-Band Medium & High Power GaAs FET FEATURES · · · · · Push-Pull Configuration , Watt GaAs FET that employs a push-pull design that offers ease of matching, greater consistency and a , FET OUTPUT POWER & add vs. INPUT POWER VDS = 12V IDS = 2A f = 2.5GHz 47 46 45 44 43 42 41 , Case Temperature (°C) 2 200 41 43 FLL400IP-3 L-Band Medium & High Power GaAs FET , 28.3 27.5 30.8 33.6 31.7 31.1 -8.6 26.2 23.3 21.4 20.7 15.2 9.4 5.2 -1.1 -8.0 -13.8
Eudyna Devices
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eudyna GaAs FET Amplifier

3SK73

Abstract: 3SK121 2005 All Rights Reserved 2005 FET ICLSILSIASIC 2005 1 , 2SC2782A 36 220 20 80 12.5 175 18 175 MHz 2. MOS FET (TC = 25 , 3SK294 VHF (wide band) RF Amp Dual Gate FET SMQ 3SK199 3SK207 3SK232 3SK291 USQ 3SK256 3SK249 3SK293 USQ 3SK260 3SK259 UHF VHF and Wide Band VHF Dual Gate FET S-MINI USC , 0 re rbb' T 1.2 1.3 43 [5] 1.1.3 FET FET 2 FET () MOS
Toshiba
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2SC2328 3SK73 3SK78 3SK101 3SK112 3SK114 3SK121 S-AV24 TOSHIBA RF Power Module S-AV24 050106DAD1 2SC382TM 2SC2114 2SK2497 2SC384 2SC1923

GP 839 DIODE

Abstract: RD01MUS2 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD01MUS2 OBSERVE HANDLING , RD01MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. This , subject to change. RD01MUS2 MITSUBISHI ELECTRIC 1/6 17 Jan. 2006 MITSUBISHI RF POWER MOS FET , ELECTRIC 2/6 5 10 Vds(V) 15 20 17 Jan. 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC , 3 4 Vgs(V) 5 6 17 Jan. 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE
Mitsubishi
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RD01MUS2-101 GP 839 DIODE GP 809 DIODE GP 841 Diode MOS FET 1127 RF Transistor s-parameter vhf 520MH

free transistor equivalent book 2sc

Abstract: uPA1556AH /MOS FET . 335 · Low Noise BIP. TR. (2SC, NE) . 336 · Twin TR. (µPA×××) . 338 · Low Noise GaAs/HJ FET (NE) . 339 · , regulations of the U.S.A. D2BGA, EEPROM, emlC-17K, FIP, FPBGA, IEBus, OCMOS FET, OPENCAD, SIMPLEHOST, VISTASL , Transceivers . 378 · Small Signal FET . 292 Plastic Fiber Link . 378 · Power MOS FET
NEC
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free transistor equivalent book 2sc uPA1556AH The Japanese Transistor Manual 1981 MOSFET cross-reference 2sk samsung UHF/VHF TV Tuner PD431000A-X C-17K V20HL V30HL V30MT V30MX V30MZ

FLL400IP-3

Abstract: FLL400IP-3 L-Band Medium & High Power GaAs FET FEATURES · · · · · Push-Pull Configuration , Watt GaAs FET that employs a push-pull design that offers ease of matching, greater consistency and a , FET OUTPUT POWER & add vs. INPUT POWER VDS = 12V IDS = 2A f = 2.5GHz 47 46 45 44 43 42 41 , Case Temperature (°C) 2 200 41 43 FLL400IP-3 L-Band Medium & High Power GaAs FET , 28.3 27.5 30.8 33.6 31.7 31.1 -8.6 26.2 23.3 21.4 20.7 15.2 9.4 5.2 -1.1 -8.0 -13.8
Fujitsu
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FLL400IP-3

Abstract: 1 928 498 167 FLL400IP-3 L-Band Medium & High Power GaAs FET FEATURES · · · · · Push-Pull Configuration , Watt GaAs FET that employs a push-pull design that offers ease of matching, greater consistency and a , FET OUTPUT POWER & add vs. INPUT POWER VDS = 12V IDS = 2A f = 2.5GHz 47 46 45 44 43 42 41 , Case Temperature (°C) 2 200 41 43 FLL400IP-3 L-Band Medium & High Power GaAs FET , 28.3 27.5 30.8 33.6 31.7 31.1 -8.6 26.2 23.3 21.4 20.7 15.2 9.4 5.2 -1.1 -8.0 -13.8
Eudyna Devices
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1 928 498 167

1 928 498 056

Abstract: FLL400IP-3 FLL400IP-3 L-Band Medium & High Power GaAs FET FEATURES · · · · · Push-Pull Configuration , Watt GaAs FET that employs a push-pull design that offers ease of matching, greater consistency and a , FET OUTPUT POWER & add vs. INPUT POWER VDS = 12V IDS = 2A f = 2.5GHz 47 46 45 44 43 42 41 , Case Temperature (°C) 2 200 41 43 FLL400IP-3 L-Band Medium & High Power GaAs FET , 28.3 27.5 30.8 33.6 31.7 31.1 -8.6 26.2 23.3 21.4 20.7 15.2 9.4 5.2 -1.1 -8.0 -13.8
Eudyna Devices
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1 928 498 056 s-band 50 Watt power amplifier 1 928 498 016 1 928 498 014

Band Power GaAs FET

Abstract: MGF0910A MITSUBISHI SEMICONDUCTOR GaAs FET MGF0910A L, S BAND POWER GaAs FET DESCRIPTION The MGF0910A, GaAs FET with an N-channel schottky gate, is OUTLINE DRAWING designed for use in UHF band , =22dBm Nov. ´97 MITSUBISHI SEMICONDUCTOR GaAs FET MGF0910A L, S BAND POWER GaAs FET TYPICAL , 35 add 40 20 6 8 10 VDS(V) Nov. ´97 MITSUBISHI SEMICONDUCTOR GaAs FET MGF0910A L, S BAND POWER GaAs FET S11 ,S22 vs. f. S21 ,S12 vs. f. +90° +j50 +j25 +j10
Mitsubishi
Original
Band Power GaAs FET GF-21
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