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FDZ203N Datasheet

Part Manufacturer Description PDF Type
FDZ203N Fairchild Semiconductor N-Channel 2.5 V Specified PowerTrench BGA MOSFET Original

FDZ203N

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: FDZ203N N-Channel 2.5V Specified PowerTrench® BGA MOSFET General Description Features , , the FDZ203N minimizes both PCB space This BGA MOSFET embodies a and RDS(ON). breakthrough in , ©2005 Fairchild Semiconductor Corporation Device FDZ203N Reel Size 7â'™â'™ Tape width 8mm Quantity 3000 units FDZ203N Rev. E7(W) FDZ203N July 2005 Symbol TA = 25°C unless otherwise , 2. 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDZ203N Rev.E7(W) FDZ203N Fairchild Semiconductor
Original
Abstract: FDZ203N January 2003 FDZ203N N-Channel 2.5V Specified PowerTrench® BGA MOSFET General , packaging, the FDZ203N minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in , Package Marking and Ordering Information Device Marking 203N Device FDZ203N Reel Size 7'' Tape width 8mm Quantity 3000 units ©2003 Fairchild Semiconductor Corporation FDZ203N Rev. E1(W) FDZ203N Electrical Characteristics Symbol BVDSS BVDSS TJ IDSS IGSSF IGSSR VGS(th) VGS(th) TJ RDS(on Fairchild Semiconductor
Original
F203N

203N

Abstract: FDZ203N FDZ203N N-Channel 2.5V Specified PowerTrench® BGA MOSFET General Description Features , FDZ203N minimizes both PCB space This BGA MOSFET embodies a and RDS(ON). breakthrough in packaging , Device FDZ203N Reel Size 7'' Tape width 8mm Quantity 3000 units FDZ203N Rev. E6(W) FDZ203N September 2005 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions , < 2.0% FDZ203N Rev.E6(W) FDZ203N Electrical Characteristics FDZ203N Dimensional Outline
Fairchild Semiconductor
Original
203N

203N

Abstract: FDZ203N FDZ203N N-Channel 2.5V Specified PowerTrench® BGA MOSFET General Description Features , FDZ203N minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in packaging , Ratings VDSS VGSS ID S Device FDZ203N Reel Size 7'' Ratings 20 ±12 7.5 20 1.6 ­55 , 3000 units FDZ203N Rev. E2(W) FDZ203N March 2003 Symbol Parameter Test Conditions , 2. 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDZ203N Rev. E2 (W) FDZ203N
Fairchild Semiconductor
Original
Abstract: FDZ203N January 2004 FDZ203N N-Channel 2.5V Specified PowerTrench® BGA MOSFET General , packaging, the FDZ203N minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in , Package Marking and Ordering Information Device Marking 203N Device FDZ203N Reel Size 7'' Tape width 8mm Quantity 3000 units ©2004 Fairchild Semiconductor Corporation FDZ203N Rev. E3(W) FDZ203N Electrical Characteristics Symbol BVDSS BVDSS TJ IDSS IGSSF IGSSR VGS(th) VGS(th) TJ RDS(on Fairchild Semiconductor
Original

203N

Abstract: FDZ203N FDZ203N N-Channel 2.5V Specified PowerTrench® BGA MOSFET General Description Features , FDZ203N minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in packaging , Information Device Marking 203N ©2002 Fairchild Semiconductor Corporation Device FDZ203N Reel Size 7'' Tape width 8mm Quantity 3000 units FDZ203N Rev. E(W) FDZ203N July 2002 , < 300µs, Duty Cycle < 2.0% FDZ203N Rev. E (W) FDZ203N Electrical Characteristics FDZ203N
Fairchild Semiconductor
Original

155oC

Abstract: FDZ203N May 2004 FDZ203N N-Channel 2.5V Specified PowerTrench® BGA MOSFET General , packaging, the FDZ203N minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in , and Ordering Information Device Marking 203N Device FDZ203N Reel Size 7'' Tape width 8mm Quantity 3000 units ©2004 Fairchild Semiconductor Corporation FDZ203N Rev. E5(W) FDZ203N , < 300µs, Duty Cycle < 2.0% FDZ203N Rev.E5(W) FDZ203N Dimensional Outline and Pad Layout
Fairchild Semiconductor
Original
155oC
Abstract: FDZ203N January 2004 FDZ203N N-Channel 2.5V Specified PowerTrench® BGA MOSFET General , packaging, the FDZ203N minimizes both PCB space This BGA MOSFET embodies a and RDS(ON). breakthrough in , Package Marking and Ordering Information Device Marking 203N Device FDZ203N Reel Size 7'' Tape width 8mm Quantity 3000 units 2004 Fairchild Semiconductor Corporation FDZ203N Rev. E4 (W) FDZ203N , < 300µs, Duty Cycle < 2.0% FDZ203N Rev. E4 (W) FDZ203N Dimensional Outline and Pad Layout Fairchild Semiconductor
Original

203N

Abstract: FDZ203N FDZ203N N-Channel 2.5V Specified PowerTrench® BGA MOSFET General Description Features , FDZ203N minimizes both PCB space This BGA MOSFET embodies a and RDS(ON). breakthrough in packaging , 2002 Fairchild Semiconductor Corporation Device FDZ203N Reel Size 7'' Tape width 8mm Quantity 3000 units FDZ203N Rev. D(W) FDZ203N January 2002 Symbol TA = 25°C unless , . Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDZ203N Rev. D (W) FDZ203N Electrical
Fairchild Semiconductor
Original

203N

Abstract: FDZ203N FDZ203N April 2008 FDZ203N tm N-Channel 2.5V Specified PowerTrench® BGA MOSFET General , the art BGA packaging, the FDZ203N minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a , Fairchild Semiconductor Corporation Device FDZ203N Reel Size 7'' Tape width 8mm Quantity 3000 units FDZ203N Rev. E7(W) Symbol TA = 25°C unless otherwise noted Parameter Test , Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDZ203N Rev.E7(W) FDZ203N Electrical
Fairchild Semiconductor
Original

BGA 20x20

Abstract: FDZ203 FDZ203N July 2002 FDZ203N N-Channel 2.5V Specified PowerTrench® BGA MOSFET General , packaging, the FDZ203N minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in , °C/W °C/W °C/W Package Marking and Ordering Information Device Marking 203N Device FDZ203N Reel Size 7'' Tape width 8mm Quantity 3000 units © 2002 Fairchild Semiconductor Corporation FDZ203N Rev. E(W) FDZ203N Electrical Characteristics Symbol BV DSS BV DSS TJ IDSS IGSSF IGSSR V GS(th
Fairchild Semiconductor
Original
BGA 20x20 FDZ203

FDZ201N

Abstract: FDZ202P Discrete MOSFET BGA RDS(ON) Max (Ohms) @ VGS = 10V Products VDS Min. (V) 4.5V 2.5V 1.8V Qg (nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) BGA N-Channel 2.0x2.0 mm FDZ203N 20 Single - 0.018 0.03 - 11 7.5 1.6 20 Single - 0.018 0.03 - 11 9 2 FDZ2553N 20 Dual - 0.014 0.02 - 12 9.6 2.1 FDZ2551N 20 Dual - 0.018 0.03 - 11 9 2.1 30 Single 0.007
Fairchild Semiconductor
Original
FDZ2554P FDZ2552P FDZ7064N FDZ5047N 30VDS 10VGS

BGA 168

Abstract: FDZ206P NBR OF LOTS SAMPLE SIZE ACC/REJ 3 79 N/A FDZ203N FDZ208P FDZ2552P FDZ2554P
Fairchild Semiconductor
Original
FDZ2554PZ FDZ2553NZ BGA 168 QP03500127- FDZ298N FDZ299P FDZ7064S

Eftec

Abstract: FDZ197 77 77 77 77 96 96 96 462 462 PSI TOTAL Affected FSIDs FDZ197P FDZ203N
Fairchild Semiconductor
Original
FDZ226P Eftec FDZ197 95Pb-5 gem 65 Q20040004 02XD24 FDZ2555NZ FDZ210P FDZ297P

bz71

Abstract: BZ5.2 FDZ2552P FDZ2554P FDZ298N FDZ5047N FDZ203N FDZ208P FDZ226P FDZ2553N FDZ2554PZ FDZ299P FDZ7064N
Fairchild Semiconductor
Original
FDZ3547N bz71 BZ5.2 AZ51 BGA 15x15mm Fairchild wafer fab

LSI SAS 2208

Abstract: li shin P-Channel 2.5V Specified PowerTrench BGA MOSFET FDZ203N N-Channel 2.5V Specified PowerTrench BGA
Fairchild Semiconductor
Original
LSI SAS 2208 li shin smps 500W P channel 600v 20a IGBT THREE PHASE SOLID STATE RELAY WITH ZVS smps 500w half bridge FAN5236 FAN7021 FAN4822 FAN8200 FSAL200 FST34X245/34X2245

MC0628R

Abstract: mc0628 FDY3001NZ FDY4001CZ FDZ201N FDZ202P FDZ202P_NL FDZ203N FDZ206P_NL FDZ294N FF80UP60PWD FFA15U40DNTU
-
Original
FDC658AP MC0628R mc0628 MC0628R replacement FAIRCHILD SEMICONDUCTOR Fairchild cross KA3846 ST42091 F50188E NB5F009 74ABT646CMSA 74ABT646CMSAX 74ABT646CMTC

Quasi-resonant Converter for induction cooker

Abstract: IGBT 60A spice model FDZ203N 2 x 2mm BGA N-CH 20 - - 18 30 - Battery Protection / Load Control
Fairchild Semiconductor
Original
Quasi-resonant Converter for induction cooker IGBT 60A spice model 1000V igbt dc to dc buck converter 10 kw schematic induction heating CAR IGNITION WITH IGBTS Quasi-resonant Converter induction cooker applications

FLMP SuperSOT-6

Abstract: Complementary MOSFETs buz11 N-Channel 1.5x1.5 mm FDZ298N 2.0x2.0 mm FDZ203N 2.0x2.5 mm FDZ201N FDZ209N 2.5x4.0 mm FDZ2553N
Fairchild Semiconductor
Original
FLMP SuperSOT-6 Complementary MOSFETs buz11 FDG6316 FQD7P20 IRF650 FQA90N08 SC70-6 SC75-6 247TM

SSP6N60A

Abstract: IRF650 FDZ201N 20 2.0 x 2.0 mm FDZ203N 20 3.5 x 4.0 mm FDZ7064N 30 5.0 x 5.5 mm FDZ5047N 30 BGA
Fairchild Semiconductor
Original
SSP6N60A IRF540 mosfet with maximum VDS 12v SSP2N60B SSP4N60A ssr2955 SSS7N60B FDG6323L FDG6324L FDG6331L FDC6323L FDC6324L FDC6325L
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