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FDMC86102 - Datasheet Archive
N-Channel Power Trench® MOSFET 100 V, 20 A, 24 m Features General Description Max rDS(on) = 24 m at VGS = 10 V, ID = 7 A This
FDMC86102 FDMC86102 N-Channel Power Trench® MOSFET 100 V, 20 A, 24 m Features General Description Max rDS(on) = 24 m at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductor`s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Max rDS(on) = 38 m at VGS = 6 V, ID = 5 A Low Profile - 1 mm max in Power 33 100% UIL Tested RoHS Compliant Application DC - DC Conversion Bottom Top S Pin 1 S S D D 4 G D 6 3 S 7 2 S D G 5 D D D 8 1 S D Power 33 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Ratings 100 Gate to Source Voltage ±20 Drain Current -Continuous (Package limited) TC = 25 °C -Continuous (Silicon limited) TA = 25 °C 29 (Note 1a) -Pulsed (Note 3) Power Dissipation TJ, TSTG TC = 25 °C Power Dissipation PD 7 A 30 Single Pulse Avalanche Energy EAS V 20 TC = 25 °C -Continuous ID Units V TA = 25 °C 72 41 (Note 1a) Operating and Storage Junction Temperature Range 2.3 -55 to +150 mJ W °C Thermal Characteristics RJC Thermal Resistance, Junction to Case RJA Thermal Resistance, Junction to Ambient 3 (Note 1a) 53 °C/W Package Marking and Ordering Information Device Marking FDMC86102 FDMC86102 Device FDMC86102 FDMC86102 ©2009 Fairchild Semiconductor Corporation FDMC86102 FDMC86102 Rev.C Package Power 33 1 Reel Size 13'' Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMC86102 FDMC86102 N-Channel Power Trench® MOSFET July 2009 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 µA, VGS = 0 V BVDSS TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V 1 µA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA 4.0 V 100 V 69 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 µA VGS(th) TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 µA, referenced to 25 °C rDS(on) Static Drain to Source On Resistance 2.0 3.1 -9 mV/°C VGS = 10 V, ID = 7 A Forward Transconductance 24 26.8 38 VGS = 10 V, ID = 7 A, TJ = 125 °C gFS 19.4 VGS = 6 V, ID = 5 A 32.8 41 VDD = 10 V, ID = 7 A 19 m S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg 725 Gate Resistance 965 pF 175 235 pF 15 VDS = 50 V, VGS = 0 V, f = 1 MHz 25 pF 0.5 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) 8 Total Gate Charge VGS = 0 V to 5 V Qgs Total Gate Charge Qgd Gate to Drain "Miller" Charge 25 ns 10 ns 13 VDD = 50 V ID = 7 A ns 14 VGS = 0 V to 10 V ns 10 4 Total Gate Charge 17 4 VDD = 50 V, ID = 7 A, VGS = 10 V, RGEN = 6 18 nC 8 11 nC 3.7 nC 3.6 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 7 A (Note 2) 0.81 1.3 VGS = 0 V, IS = 2 A (Note 2) 0.75 1.2 44 70 ns 40 65 nC IF = 7 A, di/dt = 100 A/µs V NOTES: 1. RJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RCA is determined by the user's board design. a. 53 °C/W when mounted on a 1 in2 pad of 2 oz copper b. 125 °C/W when mounted on a minimum pad of 2 oz copper 2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0 %. 3. Starting TJ = 25 oC; N-ch: L = 1 mH, IAS = 12 A, VDD = 90 V, VGS = 10 V. FDMC86102 FDMC86102 Rev.C 2 www.fairchildsemi.com FDMC86102 FDMC86102 N-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 30 ID, DRAIN CURRENT (A) 25 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX VGS = 5.5 V 20 VGS = 10 V 15 VGS = 5 V VGS = 6 V 10 VGS = 4.5 V 5 0 0.0 0.5 1.0 1.5 2.0 2.5 5 VGS = 4.5 V 4 VGS = 5 V 3 VGS = 5.5 V 2 VGS = 6 V 1 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 0 3.0 0 5 10 VDS, DRAIN TO SOURCE VOLTAGE (V) rDS(on), DRAIN TO 1.6 1.4 1.2 1.0 0.8 -50 -25 0 25 50 75 SOURCE ON-RESISTANCE (m) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 80 ID = 7 A VGS = 10 V 0.6 -75 ID = 7 A 70 100 125 150 TJ = 125 oC 40 30 20 TJ = 25 oC 6 7 8 9 10 Figure 4. On-Resistance vs Gate to Source Voltage 60 IS, REVERSE DRAIN CURRENT (A) VDS = 5 V 15 TJ = 150 oC 10 TJ = 25 oC 5 TJ = -55 oC 0 4 5 VGS, GATE TO SOURCE VOLTAGE (V) 20 3 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 50 4 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 2 30 10 Figure 3. Normalized On- Resistance vs Junction Temperature 25 25 60 TJ, JUNCTION TEMPERATURE (oC) 30 20 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 2.0 ID, DRAIN CURRENT (A) 15 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics 1.8 VGS = 10 V 5 6 VGS = 0 V 10 TJ = 150 oC 1 TJ = 25 oC 0.1 TJ = -55 oC 0.01 0.001 0.0 7 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDMC86102 FDMC86102 Rev.C 3 www.fairchildsemi.com FDMC86102 FDMC86102 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 1000 ID = 7 A VDD = 50 V Ciss 8 VDD = 25 V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 75 V 6 4 Coss 100 2 f = 1 MHz VGS = 0 V 0 2 4 6 8 10 12 14 1 Figure 7. Gate Charge Characteristics 100 Figure 8. Capacitance vs Drain to Source Voltage 30 10 9 8 7 6 5 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) TJ = 25 oC 4 3 TJ = 100 oC 2 TJ = 125 oC 25 20 VGS = 10 V Limited by Package 15 VGS = 6 V 10 5 o RJC = 3 C/W 1 0.01 0.1 1 10 0 25 30 50 150 P(PK), PEAK TRANSIENT POWER (W) 1000 10 100 µs 1 ms 1 10 ms THIS AREA IS LIMITED BY rDS(on) SINGLE PULSE TJ = MAX RATED 100 ms RJA = 125 oC/W 1s TA = 25 oC 10 s DC 0.1 1 10 100 VGS = 10 V 100 10 SINGLE PULSE RJA = 125 oC/W 1 TA = 25 oC 0.5 -4 10 500 VDS, DRAIN to SOURCE VOLTAGE (V) -3 10 -2 10 -1 10 1 10 100 1000 t, PULSE WIDTH (sec) Figure 11. Forward Bias Safe Operating Area FDMC86102 FDMC86102 Rev.C 125 Figure 10. Maximum Continuous Drain Current vs Case Temperature 50 0.01 0.01 100 o Figure 9. Unclamped Inductive Switching Capability 0.1 75 Tc, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) ID, DRAIN CURRENT (A) Crss 10 0.1 0 Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDMC86102 FDMC86102 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.01 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA SINGLE PULSE o RJA = 125 C/W 0.001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve FDMC86102 FDMC86102 Rev.C 5 www.fairchildsemi.com FDMC86102 FDMC86102 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted FDMC86102 FDMC86102 N-Channel Power Trench® MOSFET Dimensional Outline and Pad Layout FDMC86102 FDMC86102 Rev.C 6 www.fairchildsemi.com tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I40 FDMC86102 FDMC86102 Rev.C 7 www.fairchildsemi.com FDMC86102 FDMC86102 N-Channel Power Trench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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