FDMC4435BZ MO-229 MLP08SREVA - Datasheet Archive

 

P-Channel Power Trench® MOSFET -30 V, -18 A, 20 m: Features General Description Max rDS(on) = 20 m: at VGS = -10 V, ID = -8.5

 

FDMC4435BZ FDMC4435BZ P-Channel Power Trench® MOSFET -30 V, -18 A, 20 m: Features General Description Max rDS(on) = 20 m: at VGS = -10 V, ID = -8.5 A This P-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Max rDS(on) = 37 m: at VGS = -4.5 V, ID = -6.3 A Extended VGSS range (-25 V) for battery applications High performance trench technology for extremely low rDS(on) High power and current handling capability Applications HBM ESD protection level >7 kV typical (Note 4) High side in DC - DC Buck Converters 100% UIL Tested Notebook battery power management Termination is Lead-free and RoHS Compliant Load switch in Notebook Bottom Top Pin 1 D S 5 4 G D 6 3 S D S S 7 2 S D 8 1 S G D D D D MLP 3.3x3.3 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Ratings -30 Gate to Source Voltage ±25 Drain Current -Continuous (Package limited) TC = 25 °C -Continuous (Silicon limited) TA = 25 °C -32 (Note 1a) -Pulsed (Note 3) Power Dissipation TJ, TSTG TC = 25 °C Power Dissipation PD -8.5 A -50 Single Pulse Avalanche Energy EAS V -18 TC = 25 °C -Continuous ID Units V TA = 25 °C 24 31 (Note 1a) Operating and Storage Junction Temperature Range 2.3 -55 to +150 mJ W °C Thermal Characteristics RTJC Thermal Resistance, Junction to Case RTJA Thermal Resistance, Junction to Ambient 4 (Note 1a) 53 °C/W Package Marking and Ordering Information Device Marking FDMC4435BZ FDMC4435BZ Device FDMC4435BZ FDMC4435BZ ©2010 Fairchild Semiconductor Corporation FDMC4435BZ FDMC4435BZ Rev.D1 Package MLP 3.3X3.3 1 Reel Size 13 '' Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMC4435BZ FDMC4435BZ P-Channel Power Trench® MOSFET March 2010 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = -250 PA, VGS = 0 V 'BVDSS 'TJ Breakdown Voltage Temperature Coefficient ID = -250 PA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current -30 V - 22 VDS = -24 V, VGS = 0 V, mV/°C -1 TJ = 125 °C -100 PA ±10 VGS = ±25 V, VDS = 0 V PA -3.0 V On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250 PA 'VGS(th) 'TJ Gate to Source Threshold Voltage Temperature Coefficient ID = -250 PA, referenced to 25 °C 5.3 VGS = -10 V, ID = -8.5 A 15 20 VGS = -4.5 V, ID = -6.3 A 23 37 VGS = -10 V, ID = -8.5 A, TJ = 125 °C 21 28 VDD = -5 V, ID = -8.5 A 24 rDS(on) gFS Static Drain to Source On Resistance Forward Transconductance -1.0 -1.9 mV/°C m: S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance 1540 pF 395 pF 260 f = 1 MHz 2045 295 VDS = -15 V, VGS = 0 V, f = 1 MHz 385 pF : 5 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qg Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain "Miller" Charge 10 20 ns 6 12 ns 34 55 ns 20 36 ns VGS = 0 V to -10 V 33 46 nC VGS = 0 V to -4.5 V VDD = -15 V, ID = -8.5 A 17 24 VDD = -15 V, ID = -8.5 A, VGS = -10 V, RGEN = 6 : nC 5 nC 9 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = -8.5A (Note 2) 0.92 1.5 VGS = 0 V, IS = -1.9 A (Note 2) 0.75 1.2 V 22 ns 11 IF = -8.5 A, di/dt = 100 A/Ps nC NOTES: 1. RTJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTCA is determined by the user's board design. b.125 °C/W when mounted on a minimum pad of 2 oz copper a. 53 °C/W when mounted on a 1 in2 pad of 2 oz copper 2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0 %. 3. E AS of 24 mJ is based on starting TJ = 25 °C, L = 1 mH, I AS = -7 A, VDD = -27 V, VGS = -10 V. 100% test at L = 3 mH, I AS = -4 A. 4. The diode connected between the gate and source servers only as protection against ESD. No gate overvoltage rating is implied. ©2010 Fairchild Semiconductor Corporation FDMC4435BZ FDMC4435BZ Rev.D1 2 www.fairchildsemi.com FDMC4435BZ FDMC4435BZ P-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 4.0 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 50 -ID, DRAIN CURRENT (A) VGS = -4.5V 40 VGS = -5V VGS = -10V 30 VGS = -4V 20 VGS = -3.5V 10 PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX 0 0 1 2 3 PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX 3.5 VGS = -3.5V 3.0 VGS = -4V 2.5 VGS = -4.5V 2.0 1.5 VGS = -5V 1.0 VGS = -10V 0.5 4 0 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics rDS(on), DRAIN TO 0.8 SOURCE ON-RESISTANCE (m:) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.0 ID = -8.5A 40 30 TJ = 125oC 20 TJ = 25oC 2 VDS = -5V 30 20 TJ = 25oC 10 TJ = -55oC 2 3 4 6 8 10 Figure 4. On-Resistance vs Gate to Source Voltage PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX TJ = 150oC 4 -VGS, GATE TO SOURCE VOLTAGE (V) -IS, REVERSE DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX 50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 50 0 1 50 10 -50 Figure 3. Normalized On- Resistance vs Junction Temperature 40 40 60 ID = -8.5A VGS = -10V 1.2 0.6 -75 30 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.6 1.4 20 -ID, DRAIN CURRENT(A) 50 VGS = 0V 10 TJ = 150oC 1 TJ = 25oC 0.1 0.01 TJ = -55oC 0.001 0.0 5 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics 1.6 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2010 Fairchild Semiconductor Corporation FDMC4435BZ FDMC4435BZ Rev.D1 3 www.fairchildsemi.com FDMC4435BZ FDMC4435BZ P-Channel Power Trench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted -VGS, GATE TO SOURCE VOLTAGE(V) 10 10000 ID = -8.5A 8 Ciss CAPACITANCE (pF) VDD = -10V 6 VDD = -15V 4 VDD = -20V 2 1000 Coss f = 1MHz VGS = 0V 0 0 10 20 30 10 0.1 40 Qg, GATE CHARGE(nC) 10 30 Figure 8. Capacitance vs Drain to Source Voltage 40 -ID, DRAIN CURRENT (A) 20 -IAS, AVALANCHE CURRENT(A) 1 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics 10 TJ = 25oC TJ = 125oC VGS = -10V 30 VGS = -4.5V 20 10 Limited by Package o RTJC = 4 C/W 1 0.001 0.01 0.1 1 10 0 25 100 50 75 100 125 150 o tAV, TIME IN AVALANCHE(ms) TC, Ambient TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs Case Temperature -4 100 10 -Ig, GATE LEAKAGE CURRENT(A) -ID, DRAIN CURRENT (A) Crss 100 10 100us 1ms 1 10ms THIS AREA IS LIMITED BY rDS(on) 100ms SINGLE PULSE TJ = MAX RATED 0.1 1s 10s o RTJA = 125 C/W DC TA = 25oC 0.01 0.01 VDS = 0V -5 10 TJ = 125oC -6 10 -7 10 TJ = 25oC -8 0.1 1 10 10 100 -VDS, DRAIN TO SOURCE VOLTAGE (V) 5 10 15 20 25 30 -VGS, GATE TO SOURCE VOLTAGE(V) Figure 11. Forward Bias Safe Operating Area ©2010 Fairchild Semiconductor Corporation FDMC4435BZ FDMC4435BZ Rev.D1 0 Figure 12. Igss vs Vgss 4 www.fairchildsemi.com FDMC4435BZ FDMC4435BZ P-Channel Power Trench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted P(PK), PEAK TRANSIENT POWER (W) 100 VGS = -10V 10 SINGLE PULSE o RTJA = 125 C/W o TA = 25 C 1 0.5 -3 10 -2 -1 10 10 1 10 100 1000 t, PULSE WIDTH (sec) Figure 13. Single Pulse Maximum Power Dissipation 2 DUTY CYCLE-DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZTJA 1 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZTJA x RTJA + TA SINGLE PULSE o RTJA = 125 C/W 0.01 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 14. Transient Thermal Response Curve ©2010 Fairchild Semiconductor Corporation FDMC4435BZ FDMC4435BZ Rev.D1 5 www.fairchildsemi.com FDMC4435BZ FDMC4435BZ P-Channel Power Trench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 3.30 0.10 C A B 2X 3.30 PIN#1 QUADRANT 0.10 C TOP VIEW 2X 0.8 MAX RECOMMENDED LAND PATTERN 0.10 C (0.203) 0.08 C 0.05 0.00 SIDE VIEW SEATING PLANE 2.32 2.22 PIN #1 IDENT 1 0.785 4 (4X) 0.55 0.45 0.350 1.150 R0.150 2.05 1.95 0.299 8 5 0.65 0.40 (8X) 0.30 1.95 0.10 0.05 C A B C BOTTOM VIEW A. DOES NOT CONFORM TO JEDEC REGISTRATION MO-229 MO-229 B. DIMENSIONS ARE IN MILLIMETERS. C. DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994 D. DRAWING FILE NAME : MLP08SREVA MLP08SREVA E. LAND PATTERN RECOMMENDATION IS BASED ON FSC DESIGN ONLY ©2010 Fairchild Semiconductor Corporation FDMC4435BZ FDMC4435BZ Rev.D1 6 www.fairchildsemi.com FDMC4435BZ FDMC4435BZ P-Channel Power Trench® MOSFET Dimensional Outline and Pad Layout tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 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Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handing and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I47 ©2010 Fairchild Semiconductor Corporation FDMC4435BZ FDMC4435BZ Rev.D1 7 www.fairchildsemi.com FDMC4435BZ FDMC4435BZ P-Channel Power Trench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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