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Part : FDFC3N108 Supplier : Fairchild Semiconductor Manufacturer : Rochester Electronics Stock : 98,521 Best Price : $0.44 Price Each : $0.54
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FDFC3N108 Datasheet

Part Manufacturer Description PDF Type
FDFC3N108 Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 3A SSOT-6 Original
FDFC3N108 Fairchild Semiconductor N-Channel 1.8V Specified PowerTrench MOSFET with Schottky Diode Original
FDFC3N108 Fairchild Semiconductor N-Channel 1.8V Specified PowerTrench MOSFET with Schottky Diode Original
FDFC3N108 Fairchild Semiconductor N-Channel 1.8V Specified PowerTrench MOSFET with Schottky Diode Original
FDFC3N108_NL Fairchild Semiconductor 20V N-Channel 1.8V Specified PowerTrench MOSFET with Schottky Diode Original

FDFC3N108

Catalog Datasheet MFG & Type PDF Document Tags

FDFC3N108

Abstract: MOSFET with Schottky Diode tm FDFC3N108 N-Channel 1.8V Specified PowerTrench® MOSFET with Schottky Diode General , Marking Device Reel Size Tape width Quantity .108 FDFC3N108 7'' 8mm 3000 units ©2007 Fairchild Semiconductor Corporation FDFC3N108 Rev C2 (W) FDFC3N108 N-Channel 1.8V Specified , TJ = 25 oC TJ = 100 oC 363 449 250 10 425 550 µA mA mV FDFC3N108 Rev C2 (W) FDFC3N108 N-Channel 1.8V Specified PowerTrench®MOSFET with Schottky Diode Electrical Characteristics
Fairchild Semiconductor
Original
MOSFET with Schottky Diode

FDFC3N108

Abstract: FDFC3N108 N-Channel 1.8V Specified PowerTrench® MOSFET with Schottky Diode General Description , Marking Device Reel Size Tape width Quantity .108 FDFC3N108 7'' 8mm 3000 units ©2004 Fairchild Semiconductor Corporation FDFC3N108 Rev C (W) FDFC3N108 January 2004 Symbol , 449 250 10 425 550 µA mA mV FDFC3N108 Rev C (W) FDFC3N108 Electrical , paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDFC3N108 Rev C (W) FDFC3N108
Fairchild Semiconductor
Original

FDFC3N108

Abstract: FDFC3N108 April 2005 FDFC3N108 N-Channel 1.8V Specified PowerTrench® MOSFET with Schottky , FDFC3N108 7'' 8mm 3000 units ©2005 Fairchild Semiconductor Corporation FDFC3N108 Rev C1 (W , = 100 oC 363 449 250 10 425 550 µA mA mV FDFC3N108 Rev C1 (W) FDFC3N108 , letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDFC3N108 Rev C1 (W) FDFC3N108 Electrical Characteristics FDFC3N108 Typical Characteristics 6 1.8 5 2.5V
Fairchild Semiconductor
Original

120v ac to dc mobile charger circuit

Abstract: FGA25N120 size · High efficiency and reliability 9mm2 FDD6685 FDFC3N108 FDG6317NZ FDP24AN06LA0
Fairchild Semiconductor
Original
120v ac to dc mobile charger circuit FGA25N120 TRANSISTOR FDD6685 p channel mosfet 100v 1000V P-channel MOSFET BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR FSDM0565R FSDM07652R 0365RN 247TM

BSS138 NXP

Abstract: FDC642P FDC855N FDFC2P100 FDFC3N108 FDG6301N FDG6303N FDG6313N FDG6317NZ FDG6335N FDG8850NZ FDMC2610
NXP Semiconductors
Original
PMV65XP PMV60EN BSH103 BSH201 BSS138 NXP FDC642P 2n7002 nxp BSS123 NXP AO3401 M3D109 SC-73 SC-62 STT4PF20V STT5NF20V STT5PF20V