FDD6670A - Datasheet Archive

 

30V N-Channel PowerTrench® MOSFET General Description Features This N-Channel MOSFET has been designed specifically to

 

FDD6670A FDD6670A 30V N-Channel PowerTrench® MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(ON) in a small package. · 66 A, 30 V RDS(ON) = 8 m @ VGS = 10 V RDS(ON) = 10 m @ VGS = 4.5 V · Low gate charge · Fast Switching Applications · High performance trench technology for extremely low RDS(ON) · DC/DC converter · Motor Drives D D G S G D-PAK TO-252 (TO-252) S Absolute Maximum Ratings Symbol TA=25oC unless otherwise noted Parameter Ratings Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V ID Continuous Drain Current @TC=25°C (Note 3) 66 A @TA=25°C (Note 1a) 15 Pulsed (Note 1a) 100 PD Power Dissipation (Note 3) (Note 1a) 3.2 @TA=25°C (Note 1b) W 63 @TA=25°C TJ, TSTG @TC=25°C 1.3 ­55 to +175 Operating and Storage Junction Temperature Range °C °C/W Thermal Characteristics RJC Thermal Resistance, Junction-to-Case RJA Thermal Resistance, Junction-to-Ambient 2.4 40 (Note 1b) RJA (Note 1) (Note 1a) 96 Package Marking and Ordering Information Device Marking Device Package Reel Size Tape width Quantity FDD6670A FDD6670A FDD6670A FDD6670A D-PAK (TO-252) 13'' 12mm 2500 units ©2004 Fairchild Semiconductor Corporation FDD6670A FDD6670A Rev E (W) FDD6670A FDD6670A May 2004 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 2) EAS Drain-Source Avalanche Energy IAS Drain-Source Avalanche Current Single Pulse, VDD = 15 V, ID= 66 A 67 mJ 66 A Off Characteristics ID = 250 µA BVDSS BVDSS TJ IDSS Drain­Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VGS = 0 V, VDS = 24 V, VGS = 0 V 1 µA IGSS Gate­Body Leakage VGS = ±20 V, VDS = 0 V ±100 nA 1.8 ­5 3 V mV/°C 6.3 7.9 9.5 8 10 13 m On Characteristics 30 ID = 250 µA,Referenced to 25°C V 26 mV/°C (Note 2) VGS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient VDS = VGS, ID = 250 µA ID = 250 µA,Referenced to 25°C Static Drain­Source On­Resistance ID(on) On­State Drain Current VGS = 10 V, ID = 15 A VGS = 4.5 V, ID = 13 A VGS = 10 V, ID = 15 A,TJ=125°C VGS = 10 V, VDS = 5 V gFS Forward Transconductance VDS = 10 V, ID = 15 A VDS = 15 V, f = 1.0 MHz V GS = 0 V, 1 50 A 60 S 1755 pF 430 pF 180 pF 1.3 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance Switching Characteristics td(on) Turn­On Rise Time td(off) Turn­Off Delay Time tf Gate­Source Charge Qgd Gate­Drain Charge ID = 1 A, RGEN = 6 Total Gate Charge Qgs VDD = 15 V, VGS = 10 V, (Note 2) Turn­Off Fall Time Qg f = 1.0 MHz Turn­On Delay Time tr VGS = 15 mV, 11 ns 29 47 ns 34 ns 16 ID = 15 A, ns 21 19 VDS = 15V, VGS = 5 V 20 12 22 nC 4.6 nC 6.2 nC FDD6670A FDD6670A Rev. E(W) FDD6670A FDD6670A Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Drain­Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain­Source Diode Forward Current VSD Drain­Source Diode Forward Voltage trr Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge VGS = 0 V, IF = 15 A, IS = 2.3 A (Note 2) diF/dt = 100 A/µs 2.3 0.74 1.2 A V 28 nS 18 nC Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) RJA = 45°C/W when mounted on a 1in2 pad of 2 oz copper b) RJA = 96°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. Maximum current is calculated as: PD R DS(ON) where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A FDD6670A FDD6670A Rev. E(W) FDD6670A FDD6670A Electrical Characteristics FDD6670A FDD6670A Typical Characteristics 100 2.8 VGS=10V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 4.0V ID, DRAIN CURRENT (A) 80 4.5V 6.0V 3.5V 60 40 3.0V 20 0 VGS = 3.0V 2.4 2.2 2 1.8 1.6 3.5V 1.4 4.0V 4.5V 1.2 6.0V 1 10V 0.8 0 0.5 1 1.5 2 VDS, DRAIN-SOURCE VOLTAGE (V) 2.5 0 Figure 1. On-Region Characteristics 20 40 60 ID, DRAIN CURRENT (A) 80 100 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage 0.02 1.6 ID = 15A VGS = 10V ID = 8A RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.6 1.4 1.2 1 0.8 0.0175 0.015 0.0125 o TA = 125 C 0.01 0.0075 o TA = 25 C 0.6 0.005 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150 2 Figure 3. On-Resistance Variation withTemperature 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage 1000 90 VGS = 0V IS, REVERSE DRAIN CURRENT (A) VDS = 5V 75 ID, DRAIN CURRENT (A) 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 60 45 30 o TA =125 C 25oC 15 -55oC 100 TA = 125oC 10 1 25oC 0.1 -55oC 0.01 0.001 0.0001 0 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics 4 0 0.2 0.4 0.6 0.8 1 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature FDD6670A FDD6670A Rev. E(W) 10 2400 f = 1MHz VGS = 0 V VGS, GATE-SOURCE VOLTAGE (V) ID = 15A 2000 8 VDS = 10V CAPACITANCE (pF) 20V 15V 6 4 Ciss 1600 1200 2 800 Coss 400 Crss 0 0 0 5 10 15 20 25 Qg, GATE CHARGE (nC) 30 35 0 Figure 7. Gate Charge Characteristics 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 Figure 8. Capacitance Characteristics 1000 100 P(pk), PEAK TRANSIENT POWER (W) ID, DRAIN CURRENT (A) 5 100µs 100 RDS(ON) LIMIT 1ms 10ms 100ms 1s 10 10s DC 1 VGS = 10V SINGLE PULSE o RJA = 96 C/W 0.1 TA = 25oC 0.01 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) SINGLE PULSE RJA = 96°C/W TA = 25°C 80 60 40 20 0 0.01 100 Figure 9. Maximum Safe Operating Area 0.1 1 t1, TIME (sec) 10 100 Figure 10. Single Pulse Maximum Power Dissipation r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 R JA (t) = r(t) * R JA R JA = 96 °C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 t1 0.0 t2 0.01 T J - T A = P * R JA (t) Duty Cycle, D = t 1 / t 2 SINGLE PULSE 0.001 0.001 0.01 0.1 1 10 100 1000 t1 , TIME (sec) Figure 11. Transient Thermal Response Curve Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDD6670A FDD6670A Rev. 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Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I11