NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: Powerex Fast Recovery Dual Diode Modules 7/3/2003 600V 1200V CD240602 CD240602 1400V CD241202 CD241202 3300V Voltage CD241250 CD241250 100A QRD0610T30 QRD0610T30 QRD1210T30 QRD1210T30 QRD1410T30 QRD1410T30 200A QRD0620T30 QRD0620T30 QRD1220T30 QRD1220T30 QRD1420T30 QRD1420T30 QRD0630T30 QRD0630T30 QRD1230T30 QRD1230T30 QRD1430T30 QRD1430T30 QRD0640T30 QRD0640T30 50A CD240650 CD240650 300A Circuit Config 400A 20A Ic (A) *click on the products for additional information Dual QRD3310001 QRD3310001 QRD3310002 QRD3310002 Dual Diode Fast Recovery Dual Diode Grid No: 26 ... | Original |
1 pages, |
QRD1210T30 ic and equivalent IC 2003 fast recovery VOLTAGE diode 600v 600v 100a transistor 20a dual DIODE 200A 600V 1200V fast TAG620-200 DIODE 20A diodes diode 26 datasheet abstract |
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| Abstract: Module 250V 200A Mosfet / 600V 600A Fast Diode Description: Powerex Low side Chopper Mosfet Module , / 600V 600A Fast Diode Electrical Characteristics Characteristics (Each Mosfet or Each Diode) Symbol , Baseplate Low Drive Requirement Internal Series Gate Resistors (6 per chip) Low Rds(on) Fast Diodes (5) FS40SM-5 FS40SM-5 Chips per Mosfet Switch (6) H Series 100A 600V Chips per diode NC NC Inches 3.70 3.150 , 1.85 DIODE V 5 VF Diode Forward Voltage IF=200A Rth(j-c) Thermal Impedance Junction to ... | Original |
2 pages, |
QJQ0220001 mosfet low idss mosfet j 114 mosfet 600v FS40SM-5 mosfet 600V 100A "MOSFET Module" mosfet 200A QJQ0220001 abstract |
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| Abstract: Each transistor has a reverse paralleled fast recovery diode (trr 200ns). The mounting base of the module is electrically isolated from Semiconductor elements for simple heatsink construction, IC 200A, VCEX 600V Low saturation voltage for higher efficiency. ULTRA HIGH DC current gain hFE. hFE 750 , case) 8.0 1.8 200A Diode part s 2.0 5V 200 V ns 0.1 0.3 /W , 800 mA 450 Collector Emitter Sustaning Voltage Ic 1A D.C. Current Gain Ic 200A VCE ... | Original |
2 pages, |
QCA200BA60 dual DIODE 200A 600V darlington 8A 300V 200A diode 026A E76102 QCA200BA60 abstract |
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| Abstract: 600V Ic 200A 4A IB1 4A IB2 15.0 s 3.0 Ic 200A 1.8 Transistor part 0.08 Diode , reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction. IC=200A, VCEX=1000V Low saturation voltage for higher , Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of , 3.0 Vcc 600V Ic 200A 4A IB1 4A IB2 15.00 s 3.0 Ic 200A 1.8 Transistor part ... | Original |
4 pages, |
transistor VCE 1000V servo motors QCA200AA120 QCA200AA100 Power Diode 1000V dual DIODE 200A 600V Darlington 40A vvvf motor E76102 QCA200AA100 abstract |
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| Abstract: connected in series with a fast switching, soft recovery diode (trr=0.1 s) reverse connected across each IGBT. IC 200A VCES 600V VCES sat 2.3V Typ t f 0.10 s Typ Soft recovery diode Applications , cm g Unless otherwise Tj 25 Ratings Min. Typ. VCE 600V VGE 0V BR CES 20V VCE 0V , 10V Ic 20mA 7.00 V VCE sat Collector-Emitter Saturation Voltage Ic 200A VGE 15V , Rth j-c Fall Time Ic 200A VGE 15V/ 5V Vcc 300V RG 3 Turn-off Delay Time Reverse Recovery ... | Original |
3 pages, |
200A welder igbt module AC welder IGBT circuit dc servo igbt power igbt Inverter Welder IGBT 600V 200A time switch speed off dc welder 780 AC GCA200BA60 200A inverter inverter welder circuit sanrex IGBT GCA200BA60 abstract |
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| Abstract: Explanation Single Diode 62mm power . Home Products IGBT 600V the News 1200V , connected to Emitter Max. Collector-emitter-voltage in 10 V With fast internal diode Low inductance , circuit see outline) Max. DC-collector current in A Type: Reverse conducting Fast diode , Short tail IGBT Chip Low Sat & fast IGBT Chip Internal reference numbers With EmCon diode Higher , power . Home Products IGBT 600V the News 1200V Contact Job Offers ... | Original |
14 pages, |
eupec igbt BSM 100 gb Eupec BSM FZ2400R12KL4C igbt 600V 100A short circuit igbt 1200v 600a igbt 1200v 150a FZ800R12KL4C 50GB60DLC F4-300R12KF4 300GA170DN2S "IGBT Driver" 75GB60DLC IGBT FZ 1200r16kf4 datasheet abstract |
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| Abstract: ICEO = 2mA IC = 1A IEBO = 400mA VCBO = 600V VEBO = 10V -Ic=200A IC = 200A, VCE = 2.5V, Tj=125°C IC = 200A, IB = 100mA Min. Typ. Max. Units 2.0 400 1.5 V V V V V mA mA V 600 600 450 10 2000 2.5 3.0 3.0 8.0 2.0 IC = 200A IB1 = +0.1A, IB2 = -4.0A V V , Conditions Transistor Fast Recovery Diode With Thermal Compound Min. Typ. Max. 0.125 0.03 , 1DI200MA-050 1DI200MA-050 (200A) FUJI POWER TRANSISTOR MODULE POWER TRANSISTOR MODULE : : Outline ... | Original |
3 pages, |
power diode 200A M104 1DI200MA-050 1DI200MA-050 abstract |
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| Abstract: which a high speed, high power Darlington transistor. The transistor has a reverse paralled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction, IC 200A, VCEX 400/600V Low saturation voltage for higher efficiency. , Vcc 300V Ic 200A 4A IB1 4A IB2 12.0 s 3.0 Ic 200A Transistor part 1.4 Diode part , Ic 200A VCE 2V 75 Ic 200A VCE 5V DC Current Gain V 450 100 VCE(sat ... | Original |
2 pages, |
SQD200A60 SQD200A40 sit transistor diode 300v 200A darlington power transistor darlington 8A 300V 380 darlington 300V switching transistor Darlington 40A SQD200A40/60 E76102 SQD200A 400/600V SQD200A40/60 abstract |
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| Abstract: reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction, IC 200A VCEX 400/600V Low saturation voltage for , 12.0 s 3.0 Ic 200A Transistor part 1.4 Diode part 0.3 0.1 V /W QCA200A40 QCA200A40 , Ic 40A IB2 8A 400 V 600 Ic 200A VCE 2V 75 Ic 200A VCE 5V DC Current Gain V , Ic 200A IB 2.7A 2.0 V VBE(sat) ton Base-Emitter Saturation Voltage Ic 200A IB 2.7A ... | Original |
2 pages, |
QCA200A40 QCA200A60 high current darlington transistor Darlington 40A QCA200A40/60 E76102 QCA200 400/600V QCA200A40/60 abstract |
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| Abstract: Fast Recovery Single Diode Module 200 Amperes/1000 Amperes/1000 Volts Description: Powerex Fast Recovery Single Diode Modules are designed for use in applications requiring fast switching. The modules are , module part number you desire from the table below. Example: CS241020 CS241020 is a 1000 Volt, 200 Ampere Fast Recovery Single Diode Module. ? Dimension CS241020 CS241020 Fast Recovery Single Diode Module 200 , = 200A 1.5 Volts trr IFM = 200A, Tj = 150癈 di/dt =-400A/s, VR = 600V 0.8 s Qrr ... | Original |
2 pages, |
D-18 CS241020 Module, Diode 200A, 600V Single, Amperes/1000 CS241020 abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
| Over 1.1 million files (1986-2013): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer. |
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| 600V diode. See Figure 1. Figure 1 Because of the trade-off between diode breakdown voltage and switching speed, diodes rated at 600V may not be fast latest hyperfast diode from ST, the STTH806TTI STTH806TTI STTH806TTI STTH806TTI or "600V Tandem 600V boost diode is a key element, especially when the PFC is working in continuous mode and . 600V VIRTUAL DIODE The 600V Tandem device is an original solution consisting www.datasheetarchive.com/files/stmicroelectronics/stonline/press/magazine/challeng/3rdedi99/chal07.htm |
STMicroelectronics | 23/11/1999 | 8.88 Kb | HTM | chal07.htm |
| 50A, 600V - low Vcesat / High Current Transistor Driver 8Apeak / Power Switch Vcesat=1.2V@200A STTAxx06 D/P/TV 600V Turboswitch A-Series, Ultra Fast, soft recovery VB408 VB408 VB408 VB408 /VB409 /VB409 /VB409 /VB409 . Bridge - 600V/35A; 1000V/35A BHA/K3012TV BHA/K3012TV BHA/K3012TV BHA/K3012TV Input Rect. Bridge - 1200V/30A (3-ph -Current Cont. Mode Power Factor Controller STP/U/W/Y/ExxNB50/60 500/600V Mosfet TO220/Max . L6380/81 L6380/81 L6380/81 L6380/81 Level Shifter 600V - current loop control TD300N/310N TD300N/310N TD300N/310N TD300N/310N Mosfet www.datasheetarchive.com/files/stmicroelectronics/stonline/products/support/select/welding1-v2.htm |
STMicroelectronics | 31/10/2000 | 10.73 Kb | HTM | welding1-v2.htm |
| /P/TV 600V Turboswitch A-Series, Ultra Fast, soft recovery VB408/VB409 VB408/VB409 VB408/VB409 VB408/VB409* 400 Rect. Bridge - 600V/35A; 1000V/35A BHA/K3012TV BHA/K3012TV BHA/K3012TV BHA/K3012TV Input Rect. Bridge - 1200V/30A (3-ph /60 500/600V Mosfet TO220/Max220/TO247/Max247/ISOTOP Primary UC3842 UC3842 UC3842 UC3842 /3 Shifter 600V - current loop control TD300N/310N TD300N/310N TD300N/310N TD300N/310N Mosfet Driver 3 x 600m Inverter STGW50N60 STGW50N60 STGW50N60 STGW50N60* / L6353/D L6353/D L6353/D L6353/D / BUT230V BUT230V BUT230V BUT230V IGBT 50A, 600V - low Vcesat / High www.datasheetarchive.com/files/stmicroelectronics/stonline/products/support/select/welding1.htm |
STMicroelectronics | 16/01/2001 | 9.64 Kb | HTM | welding1.htm |
| 50A, 600V - low Vcesat / High Current Transistor Driver 8Apeak / Power Switch Vcesat=1.2V@200A STTAxx06 D/P/TV 600V Turboswitch A-Series, Ultra Fast, soft recovery VB408 VB408 VB408 VB408 /VB409 /VB409 /VB409 /VB409 . Bridge - 600V/35A; 1000V/35A BHA/K3012TV BHA/K3012TV BHA/K3012TV BHA/K3012TV Input Rect. Bridge - 1200V/30A (3-ph -Current Cont. Mode Power Factor Controller STP/U/W/Y/ExxNB50/60 500/600V Mosfet TO220/Max . L6380/81 L6380/81 L6380/81 L6380/81 Level Shifter 600V - current loop control TD300N/310N TD300N/310N TD300N/310N TD300N/310N Mosfet www.datasheetarchive.com/files/stmicroelectronics/stonline/products/support/select/welding1-v1.htm |
STMicroelectronics | 20/10/2000 | 10.73 Kb | HTM | welding1-v1.htm |
| : P=1kVA Va=400V Fc=10kHZ di/dt=200A/ m s Notations : POFF : turn OFF losses in the six diodes : switching frequency STTA506D STTA506D STTA506D STTA506D : TURBOSWITCH TM 600V diode Family A VFmax (5A, 1255C 1255C 1255C 1255C)=1.5V trr max (1A, 50A/ m s, 30V)=50ns STTA506D STTA506D STTA506D STTA506D : TURBOSWITCH TM 600V diode Family B VFmax (5A, 1255C 1255C 1255C 1255C)=1.3V trr max (1A, 50A conduction losses. Average current in each diode is low (Ex.: < 1.1A for 1kVA). A very fast diode has to HZ. The TURBOSWITCH TM family A 600V and 1200V is suited to Asynchronous Motor control working www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4941-v1.htm |
STMicroelectronics | 02/04/1999 | 4.89 Kb | HTM | 4941-v1.htm |
| diodes Fc : switching frequency STTA506D STTA506D STTA506D STTA506D : TURBOSWITCH TM 600V diode Family A VFmax (5A, 1255C 1255C 1255C 1255C)=1.5V trr max (1A, 50A/ m s, 30V)=50ns STTA506D STTA506D STTA506D STTA506D : TURBOSWITCH TM 600V diode Family B conditions : P=1kVA Va=400V Fc=10kHZ di/dt=200A/ m s Notations : POFF : turn OFF losses in the conduction losses. Average current in each diode is low (Ex.: < 1.1A for 1kVA). A very fast diode has than 1kHZ. The TURBOSWITCH TM family A 600V and 1200V is suited to Asynchronous Motor www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4941-v3.htm |
STMicroelectronics | 25/05/2000 | 6.68 Kb | HTM | 4941-v3.htm |
| : P=1kVA Va=400V Fc=10kHZ di/dt=200A/ m s Notations : POFF : turn OFF losses in the six diodes : switching frequency STTA506D STTA506D STTA506D STTA506D : TURBOSWITCH TM 600V diode Family A VFmax (5A, 1255C 1255C 1255C 1255C)=1.5V trr max (1A, 50A/ m s, 30V)=50ns STTA506D STTA506D STTA506D STTA506D : TURBOSWITCH TM 600V diode Family B VFmax (5A, 1255C 1255C 1255C 1255C)=1.3V trr max (1A, 50A conduction losses. Average current in each diode is low (Ex.: < 1.1A for 1kVA). A very fast diode has to HZ. The TURBOSWITCH TM family A 600V and 1200V is suited to Asynchronous Motor control working www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4941-v2.htm |
STMicroelectronics | 14/06/1999 | 4.85 Kb | HTM | 4941-v2.htm |
| : TURBOSWITCH TM 600V diode Family A VFmax (5A, 1255C 1255C 1255C 1255C)=1.5V trr max (1A, 50A/ m s, 30V)=50ns STTA506D STTA506D STTA506D STTA506D : TURBOSWITCH TM 600V diode Family B VFmax (5A, 1255C 1255C 1255C 1255C)=1.3V trr max (1A, 50A/ m s, 30V)=95ns ID1 IT4 ID A/ m s Notations : POFF : turn OFF losses in the six diodes POND : turn ON losses in the six fast diode has to be used to reduce Turn ON losses in the transistor for switching frequency higher than 1kHZ. The TURBOSWITCH TM family A 600V and 1200V is suited to Asynchronous www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4941.htm |
STMicroelectronics | 20/10/2000 | 6.91 Kb | HTM | 4941.htm |
| losses. In the range of 600V-1200V, SGS THOMSON has developed a new family of ultrafast diodes. Taking ST | NEW HIGH VOLTAGE ULTRA-FAST DIODES Application Note NEW HIGH VOLTAGE ULTRA-FAST DIODES AN601 AN601 AN601 AN601 Document Format Size .2). APPLICATION NOTE B. Rivet ) AN601/0193 AN601/0193 AN601/0193 AN601/0193 NEW HIGH VOLTAGE ULTRA-FAST DIODES : THE (dI F /dt)ON = 64A/ m s f = 100 kHz With an STTA806D STTA806D STTA806D STTA806D (TURBOSWITCH A, 8 A / 600 V / TO220AC www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3604.htm |
STMicroelectronics | 20/10/2000 | 12.28 Kb | HTM | 3604.htm |
| ST | NEW HIGH VOLTAGE ULTRA-FAST DIODES Application Note NEW HIGH VOLTAGE ULTRA-FAST DIODES AN601 AN601 AN601 AN601 transistor and the operating frequencies are higher and higher. Fast diodes used for freewheel, snubber, and rectifier functions become one of the main causes of the power losses. In the range of 600V recovery time) (Fig.2). APPLICATION NOTE B. Rivet ) AN601/0193 AN601/0193 AN601/0193 AN601/0193 NEW HIGH VOLTAGE ULTRA-FAST DIODES www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3604-v3.htm |
STMicroelectronics | 25/05/2000 | 11.71 Kb | HTM | 3604-v3.htm |