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ISL8200AMIRZ Intersil Corporation Complete Current Share 10A DC/DC Power Module; MODULE23; Temp Range: See Datasheet visit Intersil Buy
ISL8200AMIRZ-T Intersil Corporation Complete Current Share 10A DC/DC Power Module; MODULE23; Temp Range: See Datasheet visit Intersil Buy
TMS28F200AFB70BDCDL Texas Instruments 256KX8 FLASH 5V PROM, 70ns, PDSO48, PLASTIC, TSOP-48 visit Texas Instruments
TMS28F200ASB Texas Instruments TMS28F200ASB 131 072 By 16-Bit, 262 144 By 8-Bit Auto-Select Boot-Block Flash Memory visit Texas Instruments
TMS28F200AZT Texas Instruments TMS28F200AZT 131 072 By 16-Bit, 262 144 By 8-Bit Auto-Select Boot-Block Memory visit Texas Instruments
TMS28F200AFB Texas Instruments TMS28F200AFB 131 072 By 16-Bit, 262 144 By 8-Bit Auto-Select Boot-Block Flash Memory visit Texas Instruments

FAST DIODE 200A 600V

Catalog Datasheet MFG & Type PDF Document Tags

FZ1600R12KF4

Abstract: IGBT FZ 800 Explanation Single Diode 62mm power . Home Products IGBT 600V the News 1200V , connected to Emitter Max. Collector-emitter-voltage in 10 V With fast internal diode Low inductance , circuit see outline) Max. DC-collector current in A Type: Reverse conducting Fast diode , Short tail IGBT Chip Low Sat & fast IGBT Chip Internal reference numbers With EmCon diode Higher , power . Home Products IGBT 600V the News 1200V Contact Job Offers
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MIMMG200D120B6TN

Abstract: Figure7. Diode Forward Characteristics 0.6 Erec (mJ) 24 20 16 12 8 4 0 0 IF=200A VCE=600V TVj =125°C , Reverse Transfer Capacitance Turn - on Delay Time VCE=600V, IC=200A , VGE=±15V VCE=25V, VGE=0V, f =1MHz VCC=600V,IC=200A, RG =3.6, VGE=±15V, Inductive Load VCC=600V,IC=200A, RG =3.6, VGE=±15V, Inductive Load VCC=600V,IC=200A, RG =3.6, VGE=±15V, Inductive Load tpsc10µS , VGE=15V TVj=125°C,VCC=900V Per , =0V, TVj =25°C IF=200A , VGE=0V, TVj =125°C IF=200A , VR=600V diF/dt=-4000A/s TVj=125°C 1.65 1.65 190 36
Micross Components
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N mosfet 250v 600A

Abstract: mosfet 200A Module 250V 200A Mosfet / 600V 600A Fast Diode Description: Powerex Low side Chopper Mosfet Module , / 600V 600A Fast Diode Electrical Characteristics Characteristics (Each Mosfet or Each Diode) Symbol , Baseplate Low Drive Requirement Internal Series Gate Resistors (6 per chip) Low Rds(on) Fast Diodes (5) FS40SM-5 Chips per Mosfet Switch (6) H Series 100A 600V Chips per diode NC NC Inches 3.70 3.150 , =400A 1.85 DIODE V 5 VF Diode Forward Voltage IF=200A Rth(j-c) Thermal Impedance Junction to
Powerex
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QJQ0220001 N mosfet 250v 600A mosfet 200A mosfet 600V 100A mosfet 600v mosfet 100a 600v
Abstract: = 600V IC = 200A R G = 2.7â"¦ Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 200A R G = 2.7â"¦ VGE = ±15V Tj = 125°C VBus = 600V IC = 200A Tj = 125°C R G = 2.7â"¦ Fall , Reverse Recovery Energy IF = 200A VGE = 0V IF = 200A VR = 600V di/dt =2500A/µs , APTGT200DU120G Dual common source Fast Trench + Field Stop IGBT® Power Module C1 , VCES = 1200V IC = 200A @ Tc = 80°C Q2 G1 G2 E1 E2 E G1 C1 E C2 E1 Microsemi
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APT0601

Abstract: APT0502 200A VGE = 0V IF = 200A VR = 600V di/dt =2500A/µs www.microsemi.com Max Unit 350 2.1 , Current VF 1.4 Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 200A R G = 2.7 Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 200A R G = 2.7 VGE = ±15V Tj = 125°C VBus = 600V IC = 200A Tj = 125°C R G = 2.7 Fall Time Tf Min 170 Tj = 125°C Tj = 25°C Tj = , Operating Area 50 450 VCE = 600V VGE =15V IC = 200A T J = 125°C 30 Eon 400 350 300 IF
Microsemi
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APT0502 APT0601
Abstract: 0V VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 200A R G = 2.7â"¦ Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 200A R G = 2.7â"¦ VGE = ±15V Tj = 125°C VBus = 600V IC = 200A Tj = 125°C R G = 2.7â"¦ Fall Time Turn-on Delay Time Rise Time Turn-off , 200A VR = 600V di/dt =2500A/µs www.microsemi.com Tj = 25°C Tj = 125°C Tc = 80°C Tj = 25 , = 600V VGE =15V IC = 200A T J = 125°C Eon 400 350 300 30 IF (A) E (mJ) 40 Microsemi
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APTGT200DA120G

switched reluctance motor parameter

Abstract: APT0502 30 420 Reverse Recovery Energy IF = 200A VGE = 0V IF = 200A VR = 600V di/dt =2500A/µs , 600V IC = 200A R G = 2.7 Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 200A R G = 2.7 VGE = ±15V Tj = 125°C VBus = 600V IC = 200A Tj = 125°C R G = 2.7 Fall Time Tf Min 170 , Reverse Bias Safe Operating Area 50 450 VCE = 600V VGE =15V IC = 200A T J = 125°C 30 Eon , ) www.microsemi.com 4-5 APTGT200DH120G Forward Characteristic of diode 400 VCE=600V D=50% RG =2.7 TJ
Microsemi
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switched reluctance motor parameter
Abstract: = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 200A R G = 2.7â"¦ Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 200A R G = 2.7â"¦ VGE = ±15V Tj = 125°C VBus = 600V IC = 200A Tj = 125°C R G = 2.7â"¦ Fall Time Turn-on Delay Time Rise Time Turn-off , 200A VR = 600V di/dt =2500A/µs www.microsemi.com Tj = 25°C Tj = 125°C Tc = 80°C Tj = 25 , Operating Area 50 450 VCE = 600V VGE =15V IC = 200A T J = 125°C Eon 400 350 300 30 Microsemi
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Abstract: Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 200A R G = 2.7â"¦ Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 200A R G = 2.7â"¦ VGE = ±15V Tj = 125°C VBus = 600V IC = 200A , = 600V VGE =15V IC = 200A T J = 125°C Eon 400 350 300 30 IF (A) E (mJ) 40 , Characteristic of diode 400 VCE=600V D=50% RG =2.7 TJ=125°C Tc=75°C 50 ZVS 40 300 250 ZCS , APTGT200A120G Phase leg Fast Trench + Field Stop IGBT® Power Module Application â'¢ Welding Microsemi
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APT0502

Abstract: APT0601 APTGT200SK120G VCES = 1200V IC = 200A @ Tc = 80°C Buck chopper Fast Trench + Field Stop IGBT , 200A VGE = 0V IF = 200A VR = 600V di/dt =2500A/µs www.microsemi.com Max Unit 350 2.1 , °C) VGE = ±15V VBus = 600V IC = 200A R G = 2.7 Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 200A R G = 2.7 VGE = ±15V Tj = 125°C VBus = 600V IC = 200A Tj = 125°C R G = 2.7 Fall , Gate Resistance Reverse Bias Safe Operating Area 50 450 VCE = 600V VGE =15V IC = 200A T J
Microsemi
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Abstract: APTGT200SK120G VCES = 1200V IC = 200A @ Tc = 80°C Buck chopper Fast Trench + Field Stop , 0V VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 200A R G = 2.7â"¦ Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 200A R G = 2.7â"¦ VGE = ±15V Tj = 125°C VBus = 600V IC = 200A Tj = 125°C R G = 2.7â"¦ Fall Time Turn-on Delay Time Rise Time Turn-off , 200A VR = 600V di/dt =2500A/µs www.microsemi.com Tj = 25°C Tj = 125°C Tc = 80°C Tj = 25 Microsemi
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APT0502

Abstract: APT0601 APTGT200H120G VCES = 1200V IC = 200A @ Tc = 80°C Full - Bridge Fast Trench + Field Stop IGBT , Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 200A R G = 2.7 Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 200A R G = 2.7 VGE = ±15V Tj = 125°C VBus = 600V IC = 200A Tj = 125 , Gate Resistance Reverse Bias Safe Operating Area 50 450 VCE = 600V VGE =15V IC = 200A T J , Thermal Impedance (°C/W) 0.16 APTGT200H120G Forward Characteristic of diode 400 VCE=600V D
Microsemi
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APT0502

Abstract: APT0601 Energy IF = 200A VGE = 0V IF = 200A VR = 600V di/dt =2500A/µs www.microsemi.com Max , DC Forward Current VF 1.4 Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 200A R G = 2.7 Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 200A R G = 2.7 VGE = ±15V Tj = 125°C VBus = 600V IC = 200A Tj = 125°C R G = 2.7 Fall Time Tf Min 170 Tj = 125 , Bias Safe Operating Area 50 450 VCE = 600V VGE =15V IC = 200A T J = 125°C 30 Eon 400
Microsemi
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Abstract: APTGT200H120G VCES = 1200V IC = 200A @ Tc = 80°C Full - Bridge Fast Trench + Field Stop , = 600V IC = 200A R G = 2.7â"¦ Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 200A R G = 2.7â"¦ VGE = ±15V Tj = 125°C VBus = 600V IC = 200A Tj = 125°C R G = 2.7â"¦ Fall , Reverse Recovery Energy IF = 200A VGE = 0V IF = 200A VR = 600V di/dt =2500A/µs , '¢ Uninterruptible Power Supplies â'¢ Motor control VBUS Q1 Q3 G1 G3 E1 Q2 Features â'¢ Fast Microsemi
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APT0502

Abstract: APT0601 Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 200A R G = 2.7 Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 200A R G = 2.7 VGE = ±15V Tj = 125°C VBus = 600V IC = 200A Tj = 125 , 450 VCE = 600V VGE =15V IC = 200A T J = 125°C 30 Eon 400 350 300 IF (A) E (mJ , Characteristic of diode 400 VCE=600V D=50% RG =2.7 TJ=125°C Tc=75°C 50 ZVS 40 ZCS 30 T J , APTGT200DA120G Boost chopper Fast Trench + Field Stop IGBT® Power Module VBUS VCES = 1200V
Microsemi
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fast recovery Diode 1200V 200A

Abstract: APTGT200DU120 Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 200A R G = 2.7 Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 200A R G = 2.7 Test Conditions Maximum Reverse Leakage Current , Voltage IF = 200A VGE = 0V trr Reverse Recovery Time IF = 200A VR = 600V Qrr Reverse , Operating Area 50 450 VCE = 600V V GE =15V IC = 200A T J = 125°C 30 Eon 400 350 300 IC , Forward Characteristic of diode 400 V CE=600V D=50% RG=2.7 TJ=125°C Tc=75°C 50 ZCS 40 ZVS
Advanced Power Technology
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APTGT200DU120 fast recovery Diode 1200V 200A

APTGT200H120

Abstract: APTGT200H120 VCES = 1200V IC = 200A @ Tc = 80°C Full - Bridge Fast Trench + Field Stop IGBT , Switching (25°C) VGE = ±15V VBus = 600V IC = 200A R G = 2.7 Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 200A R G = 2.7 Test Conditions Maximum Reverse Leakage Current VR , 200A VGE = 0V trr Reverse Recovery Time IF = 200A VR = 600V Qrr Reverse Recovery , VCE = 600V V GE =15V IC = 200A T J = 125°C 30 Eon 400 350 300 IC (A) E (mJ) 40
Advanced Power Technology
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APTGT200A120

Abstract: Switching (25°C) VGE = ±15V VBus = 600V IC = 200A R G = 2.7 Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 200A R G = 2.7 Test Conditions Maximum Reverse Leakage Current VR , 200A VGE = 0V trr Reverse Recovery Time IF = 200A VR = 600V Qrr Reverse Recovery , VCE = 600V V GE =15V IC = 200A T J = 125°C 30 Eon 400 350 300 IC (A) E (mJ) 40 , Forward Characteristic of diode 400 V CE=600V D=50% RG=2.7 TJ=125°C Tc=75°C 50 ZCS 40 ZVS
Advanced Power Technology
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APTGT200A120

APTGT200SK120

Abstract: APTGT200SK120 VCES = 1200V IC = 200A @ Tc = 80°C Buck chopper Fast Trench + Field Stop IGBT , Reverse Voltage 5.0 Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 200A R G = 2.7 Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 200A R G = 2.7 Fall Time Td(on) Tr 1.4 , Current 50% duty cycle VF Diode Forward Voltage IF = 200A VGE = 0V trr Reverse Recovery Time IF = 200A VR = 600V Qrr Reverse Recovery Charge di/dt =2500A/µs 1.7 2.0 5.8
Advanced Power Technology
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APTGT20

asymmetrical igbt

Abstract: APTGT200DH120 5.0 Min Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 200A R G = 2.7 Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 200A R G = 2.7 Test Conditions Maximum Reverse , Forward Voltage IF = 200A VGE = 0V trr Reverse Recovery Time IF = 200A VR = 600V Qrr , Operating Area 50 450 VCE = 600V V GE =15V IC = 200A T J = 125°C 30 Eon 400 350 300 IC , Forward Characteristic of diode 400 V CE=600V D=50% RG=2.7 TJ=125°C Tc=75°C 50 ZCS 40 ZVS
Advanced Power Technology
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APTGT200DH120 asymmetrical igbt
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