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FAST DIODE 200A 600V

Catalog Datasheet Results Type PDF Document Tags
Abstract: Powerex Fast Recovery Dual Diode Modules 7/3/2003 600V 1200V CD240602 CD240602 1400V CD241202 CD241202 3300V Voltage CD241250 CD241250 100A QRD0610T30 QRD0610T30 QRD1210T30 QRD1210T30 QRD1410T30 QRD1410T30 200A QRD0620T30 QRD0620T30 QRD1220T30 QRD1220T30 QRD1420T30 QRD1420T30 QRD0630T30 QRD0630T30 QRD1230T30 QRD1230T30 QRD1430T30 QRD1430T30 QRD0640T30 QRD0640T30 50A CD240650 CD240650 300A Circuit Config 400A 20A Ic (A) *click on the products for additional information Dual QRD3310001 QRD3310001 QRD3310002 QRD3310002 Dual Diode Fast Recovery Dual Diode Grid No: 26 ... Original
datasheet

1 pages,
7.06 Kb

QRD1210T30 ic and equivalent IC 2003 fast recovery VOLTAGE diode 600v 600v 100a transistor 20a dual DIODE 200A 600V 1200V fast TAG620-200 DIODE 20A diodes diode 26 datasheet abstract
datasheet frame
Abstract: Module 250V 200A Mosfet / 600V 600A Fast Diode Description: Powerex Low side Chopper Mosfet Module , / 600V 600A Fast Diode Electrical Characteristics Characteristics (Each Mosfet or Each Diode) Symbol , Baseplate Low Drive Requirement Internal Series Gate Resistors (6 per chip) Low Rds(on) Fast Diodes (5) FS40SM-5 FS40SM-5 Chips per Mosfet Switch (6) H Series 100A 600V Chips per diode NC NC Inches 3.70 3.150 , 1.85 DIODE V 5 VF Diode Forward Voltage IF=200A Rth(j-c) Thermal Impedance Junction to ... Original
datasheet

2 pages,
22.02 Kb

QJQ0220001 FS40SM-5 mosfet low idss mosfet j 114 mosfet 100a 600v mosfet 600v "MOSFET Module" N mosfet 250v 600A mosfet 600V 100A mosfet 200A QJQ0220001 abstract
datasheet frame
Abstract: Each transistor has a reverse paralleled fast recovery diode (trr 200ns). The mounting base of the module is electrically isolated from Semiconductor elements for simple heatsink construction, IC 200A, VCEX 600V Low saturation voltage for higher efficiency. ULTRA HIGH DC current gain hFE. hFE 750 , case) 8.0 1.8 200A Diode part s 2.0 5V 200 V ns 0.1 0.3 /W , 800 mA 450 Collector Emitter Sustaning Voltage Ic 1A D.C. Current Gain Ic 200A VCE ... Original
datasheet

2 pages,
447.31 Kb

QCA200BA60 dual DIODE 200A 600V darlington 8A 300V 200A diode 026A diode 300v 200A E76102 QCA200BA60 abstract
datasheet frame
Abstract: 600V Ic 200A 4A IB1 4A IB2 15.0 s 3.0 Ic 200A 1.8 Transistor part 0.08 Diode , reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction. IC=200A, VCEX=1000V Low saturation voltage for higher , Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of , 3.0 Vcc 600V Ic 200A 4A IB1 4A IB2 15.00 s 3.0 Ic 200A 1.8 Transistor part ... Original
datasheet

4 pages,
836.27 Kb

ac diode 1000V E76102 Power Diode 1000V QCA200AA100 QCA200AA120 servo motors transistor VCE 1000V dual DIODE 200A 600V Darlington 40A transistor b 1560 vvvf motor QCA200AA100 abstract
datasheet frame
Abstract: connected in series with a fast switching, soft recovery diode (trr=0.1 s) reverse connected across each IGBT. IC 200A VCES 600V VCES sat 2.3V Typ t f 0.10 s Typ Soft recovery diode Applications , cm g Unless otherwise Tj 25 Ratings Min. Typ. VCE 600V VGE 0V BR CES 20V VCE 0V , 10V Ic 20mA 7.00 V VCE sat Collector-Emitter Saturation Voltage Ic 200A VGE 15V , Rth j-c Fall Time Ic 200A VGE 15V/ 5V Vcc 300V RG 3 Turn-off Delay Time Reverse Recovery ... Original
datasheet

3 pages,
496.69 Kb

welder inverter AC welder IGBT circuit dc servo igbt 200A welder igbt module dc welder power igbt IGBT 600V 200A time switch speed off Inverter Welder 780 AC 200A inverter inverter welder circuit GCA200BA60 GCA200BA60 GCA200BA60 GCA200BA60 abstract
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Abstract: Explanation Single Diode 62mm power . Home Products IGBT 600V the News 1200V , connected to Emitter Max. Collector-emitter-voltage in 10 V With fast internal diode Low inductance , circuit see outline) Max. DC-collector current in A Type: Reverse conducting Fast diode , Short tail IGBT Chip Low Sat & fast IGBT Chip Internal reference numbers With EmCon diode Higher , power . Home Products IGBT 600V the News 1200V Contact Job Offers ... Original
datasheet

14 pages,
360.45 Kb

EUPEC BSM50G*120DN2 Eupec BSM eupec igbt 3300v 75GB60DLC 50GB60DLC 100GB170DN2 600v 20a IGBT driver F4-300R12KF4 15GD60DLC igbt 1600V 20A eupec igbt BSM 100 gb FZ800R12KL4C IGBT FZ 800 datasheet abstract
datasheet frame
Abstract: ICEO = 2mA IC = 1A IEBO = 400mA VCBO = 600V VEBO = 10V -Ic=200A IC = 200A, VCE = 2.5V, Tj=125°C IC = 200A, IB = 100mA Min. Typ. Max. Units 2.0 400 1.5 V V V V V mA mA V 600 600 450 10 2000 2.5 3.0 3.0 8.0 2.0 IC = 200A IB1 = +0.1A, IB2 = -4.0A V V , Conditions Transistor Fast Recovery Diode With Thermal Compound Min. Typ. Max. 0.125 0.03 , 1DI200MA-050 1DI200MA-050 (200A) FUJI POWER TRANSISTOR MODULE POWER TRANSISTOR MODULE : : Outline ... Original
datasheet

3 pages,
144.74 Kb

transistor power diode 200A M104 1DI200MA-050 200A inverter 1DI200MA-050 abstract
datasheet frame
Abstract: Conditions ICBO = 2mA ICEO = 2mA IC = 1A IEBO = 400mA VCBO = 600V VEBO = 10V -Ic=200A IC = 200A, VCE = 2.5V, Tj=125°C IC = 200A, IB = 100mA IC = 200A IB1 = +0.1A, IB2 = -4.0A Note: *1:Recommendable Value , (j-c) Rth(c-f) Test Conditions Transistor Fast Recovery Diode With Thermal Compound Min. Typ. Max. 0.125 0.03 Units °C/W °C/W °C/W 1 1DI200MA-050 1DI200MA-050 (200A) : Characteristics FUJI , 1DI200MA-050 1DI200MA-050 (200A) POWER TRANSISTOR MODULE Features hFE High DC Current Gain H igh ... Original
datasheet

3 pages,
141.93 Kb

1DI200MA-050 1DI200MA-050 abstract
datasheet frame
Abstract: which a high speed, high power Darlington transistor. The transistor has a reverse paralled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction, IC 200A, VCEX 400/600V Low saturation voltage for higher efficiency. , Vcc 300V Ic 200A 4A IB1 4A IB2 12.0 s 3.0 Ic 200A Transistor part 1.4 Diode part , Ic 200A VCE 2V 75 Ic 200A VCE 5V DC Current Gain V 450 100 VCE(sat ... Original
datasheet

2 pages,
512.75 Kb

darlington power transistor SQD200A40 sit transistor diode 300v 200A 380 darlington darlington 8A 300V Application sqd200a60 SQD200A60 300V switching transistor Darlington 40A SQD200A40/60 E76102 SQD200A SQD200A40/60 abstract
datasheet frame
Abstract: reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction, IC 200A VCEX 400/600V Low saturation voltage for , 12.0 s 3.0 Ic 200A Transistor part 1.4 Diode part 0.3 0.1 V /W QCA200A40 QCA200A40 , Ic 40A IB2 8A 400 V 600 Ic 200A VCE 2V 75 Ic 200A VCE 5V DC Current Gain V , Ic 200A IB 2.7A 2.0 V VBE(sat) ton Base-Emitter Saturation Voltage Ic 200A IB 2.7A ... Original
datasheet

2 pages,
517.1 Kb

QCA200A40 QCA200A60 high current darlington transistor Darlington 40A QCA200A40/60 E76102 QCA200 400/600V QCA200A40/60 abstract
datasheet frame

Datasheet Content (non pdf)

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Over 1.1 million files (1986-2014): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer.
 
is the latest hyperfast diode from ST, the STTH806TTI STTH806TTI STTH806TTI STTH806TTI or "600V Tandem". 600V boost diode is a key element, especially when the PFC is working in continuous mode and 600V diode. See Figure 1. Figure 1 Because of the trade-off between diode breakdown voltage and switching speed, diodes rated at 600V may not be 600V VIRTUAL DIODE The 600V Tandem device is an original solution consisting
www.datasheetarchive.com/files/stmicroelectronics/stonline/press/magazine/challeng/3rdedi99/chal07.htm
STMicroelectronics 23/11/1999 8.88 Kb HTM chal07.htm
: TURBOSWITCH TM 600V diode Family A VFmax (5A, 1255C 1255C 1255C 1255C)=1.5V trr max (1A, 50A/ m s, 30V)=50ns STTA506D STTA506D STTA506D STTA506D : TURBOSWITCH TM 600V diode Family B VFmax (5A, 1255C 1255C 1255C 1255C)=1.3V trr max (1A, 50A/ m s, 30V)=95ns ID1 IT4 ID4 IT1 IL diode is low (Ex.: < 1.1A for 1kVA). A very fast diode has to be used to reduce Turn ON losses current IL is built with the commutation of T1 and the complementary freewheel diode D4, whereas Turn-OFF) in the diode are negligible with regard to conduction losses. The average current in the
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4941-v1.htm
STMicroelectronics 02/04/1999 4.89 Kb HTM 4941-v1.htm
: TURBOSWITCH TM 600V diode Family A VFmax (5A, 1255C 1255C 1255C 1255C)=1.5V trr max (1A, 50A/ m s, 30V)=50ns STTA506D STTA506D STTA506D STTA506D : TURBOSWITCH TM 600V diode Family B VFmax (5A, 1255C 1255C 1255C 1255C)=1.3V trr max (1A, 50A/ m s, 30V)=95ns ID1 IT4 ID4 IT1 IL diode is low (Ex.: < 1.1A for 1kVA). A very fast diode has to be used to reduce Turn ON losses current IL is built with the commutation of T1 and the complementary freewheel diode D4, whereas Turn-OFF) in the diode are negligible with regard to conduction losses. The average current in the
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4941-v2.htm
STMicroelectronics 14/06/1999 4.85 Kb HTM 4941-v2.htm
STTA506D STTA506D STTA506D STTA506D : TURBOSWITCH TM 600V diode Family A VFmax (5A, 1255C 1255C 1255C 1255C)=1.5V trr max (1A, 50A/ m s, 30V)=50ns STTA506D STTA506D STTA506D STTA506D : TURBOSWITCH TM 600V diode Family B VFmax (5A, 1255C 1255C 1255C 1255C)=1.3V trr max (1A each diode is low (Ex.: < 1.1A for 1kVA). A very fast diode has to be used to reduce Turn T1 and the complementary freewheel diode D4, whereas the negative sinusoidal part is built with T4 and D1 (Fig.2). Switching losses (Turn-ON and Turn-OFF) in the diode are
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4941-v3.htm
STMicroelectronics 25/05/2000 6.68 Kb HTM 4941-v3.htm
recovery current of the diodes Fc : switching frequency STTA506D STTA506D STTA506D STTA506D : TURBOSWITCH TM 600V diode Family A VFmax (5A, 1255C 1255C 1255C 1255C)=1.5V trr max (1A, 50A/ m s, 30V)=50ns STTA506D STTA506D STTA506D STTA506D : TURBOSWITCH TM 600V diode current in each diode is low (Ex.: < 1.1A for 1kVA). A very fast diode has to be used to reduce current IL is built with the commutation of T1 and the complementary freewheel diode D4, whereas Turn-OFF) in the diode are negligible with regard to conduction losses. The average current in the
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4941.htm
STMicroelectronics 20/10/2000 6.91 Kb HTM 4941.htm
N=2.84 TT=4.32u ) *SRC=GBJ2006 GBJ2006 GBJ2006 GBJ2006;DI_GBJ2006 GBJ2006 GBJ2006 GBJ2006;Diodes;Si; 600V 20.0A 3.00us Diodes Inc. Bridge Rect. ;Diodes;Si; 600V 4.00A 3.00us Diodes Inc. Bridge Rectifier - Per Diode .MODEL DI_KBJ406G KBJ406G KBJ406G KBJ406G D ; 600V 2.00A 3.00us Diodes Inc. Bridge - for one element .MODEL DI_KBP206G KBP206G KBP206G KBP206G D ( IS=143n RS=21.1m ;DI_RH06;Diodes;Si; 600V 0.500A 250ns Diodes Inc. Fast Recovery Bridge Rectifier, per node .MODEL ) *SRC=HD06;DI_HD06;Diodes;Si; 600V 0.800A 3.00us Diodes Inc. Bridge Rectifier - for one element
www.datasheetarchive.com/files/diodes-inc/spice-model/spicemodels_diodes_bridge-rectifiers.txt
Diodes, Inc. 04/09/2012 18.64 Kb TXT spicemodels_diodes_bridge-rectifiers.txt
Figure 1 shows a typical voltage spike at turn-off across a 600V, 200A Ultra-fast IGBT module operating at a bus voltage of 360V and 200A, where Rg(on) is 4.7 W and Rg(off) is 0, and the effect of inductances within the circuit. At low power levels of a few Watts a fast turn-off transition results in efficiency with fast switching speeds without creating huge overshoots with all their attendant problems. allow the use of a 600V device with a reasonable safety margin, but at the expense of a decrease in
www.datasheetarchive.com/files/international-rectifier/docs/wcd00009/wcd009aa.htm
International Rectifier 20/08/1999 10.45 Kb HTM wcd009aa.htm
4 Amp 3 us Si Diode Bridge 07-03-1993 .ENDS * *SRC=KBU4J;KBU4J;Diodes;Bridge;600V 4A 15 Amp 3 us Si Diode 07-07-1993 .ENDS * *SRC=DB1506 DB1506 DB1506 DB1506;DB1506 DB1506 DB1506 DB1506;Diodes;Bridge;600V 15A, 3 Volt 25 Amp 3 us Si Diode 07-07-1993 .ENDS * *SRC=DB2506 DB2506 DB2506 DB2506;DB2506 DB2506 DB2506 DB2506;Diodes;Bridge;600V 25A Volt 35 Amp 3 us Si Diode 07-07-1993 .ENDS * *SRC=DB3506 DB3506 DB3506 DB3506;DB3506 DB3506 DB3506 DB3506;Diodes;Bridge;600V 35A Si Diode 02-08-1993 * *SRC=BY253 BY253 BY253 BY253;BY253 BY253 BY253 BY253;Diodes;Rectifier
www.datasheetarchive.com/files/spicemodels/misc/modelos/spice_complete/diode3.lib
Spice Models 18/04/2010 70.9 Kb LIB diode3.lib
No abstract text available
www.datasheetarchive.com/download/46754491-777571ZC/icap4rxliblist.zip (ICAP4RxlibList.xls)
Spice Models 29/07/2012 198.91 Kb ZIP icap4rxliblist.zip
face="Arial, Helvetica, sans-serif" color="#000000" size="2">Diode/Rectifier Info name="product_style">AllFast RecoveryGeneral PurposeSnubber/Free Wheel AllDIODE MODULE DISCRETESCR/DIODE MODULESTUD
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