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FAST DIODE 200A 600V

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Explanation Single Diode 62mm power . Home Products IGBT 600V the News 1200V , connected to Emitter Max. Collector-emitter-voltage in 10 V With fast internal diode Low inductance , circuit see outline) Max. DC-collector current in A Type: Reverse conducting Fast diode , Short tail IGBT Chip Low Sat & fast IGBT Chip Internal reference numbers With EmCon diode Higher , power . Home Products IGBT 600V the News 1200V Contact Job Offers ... Original
datasheet

14 pages,
360.45 Kb

75GB60DLC 600v 20a IGBT driver 50GB60DLC F4-300R12KF4 Eupec BSM 100GB170DN2 15GD60DLC eupec igbt BSM 100 gb igbt 1600V 20A igbt 1600v 100A FZ800R12KL4C igbt driver IGBT FZ 1200r16kf4 75GD120DN2 IGBT FZ 800 FZ1600R12KF4 TEXT
datasheet frame
Abstract: Figure7. Diode Forward Characteristics 0.6 Erec (mJ) 24 20 16 12 8 4 0 0 IF=200A VCE=600V TVj =125°C , Reverse Transfer Capacitance Turn - on Delay Time VCE=600V, IC=200A , VGE=±15V VCE=25V, VGE=0V, f =1MHz VCC=600V,IC=200A, RG =3.6, VGE=±15V, Inductive Load VCC=600V,IC=200A, RG =3.6, VGE=±15V, Inductive Load VCC=600V,IC=200A, RG =3.6, VGE=±15V, Inductive Load tpsc10uS , VGE=15V TVj=125°C,VCC=900V Per , =0V, TVj =25°C IF=200A , VGE=0V, TVj =125°C IF=200A , VR=600V diF/dt=-4000A/s TVj=125°C 1.65 1.65 190 36 ... Micross Components
Original
datasheet

5 pages,
2159.7 Kb

MIMMG200D120B6TN TEXT
datasheet frame
Abstract: Module 250V 200A Mosfet / 600V 600A Fast Diode Description: Powerex Low side Chopper Mosfet Module , / 600V 600A Fast Diode Electrical Characteristics Characteristics (Each Mosfet or Each Diode) Symbol , Baseplate Low Drive Requirement Internal Series Gate Resistors (6 per chip) Low Rds(on) Fast Diodes (5) FS40SM-5 FS40SM-5 Chips per Mosfet Switch (6) H Series 100A 600V Chips per diode NC NC Inches 3.70 3.150 , =400A 1.85 DIODE V 5 VF Diode Forward Voltage IF=200A Rth(j-c) Thermal Impedance Junction to ... Powerex
Original
datasheet

2 pages,
22.02 Kb

QJQ0220001 200a mosfet mosfet low idss mosfet j 114 FS40SM-5 M5 DIODE 3150 mosfet mosfet 100a 600v "MOSFET Module" mosfet 600v mosfet 600V 100A mosfet 200A N mosfet 250v 600A TEXT
datasheet frame
Abstract: = 600V IC = 200A R G = 2.7Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 200A R G = 2.7Ω VGE = ±15V Tj = 125°C VBus = 600V IC = 200A Tj = 125°C R G = 2.7Ω Fall , Reverse Recovery Energy IF = 200A VGE = 0V IF = 200A VR = 600V di/dt =2500A/Âus , APTGT200DU120G APTGT200DU120G Dual common source Fast Trench + Field Stop IGBT® Power Module C1 , VCES = 1200V IC = 200A @ Tc = 80°C Q2 G1 G2 E1 E2 E G1 C1 E C2 E1 ... Microsemi
Original
datasheet

5 pages,
221.21 Kb

APTGT200DU120G TEXT
datasheet frame
Abstract: 200A VGE = 0V IF = 200A VR = 600V di/dt =2500A/us www.microsemi.com Max Unit 350 2.1 , Current VF 1.4 Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 200A R G = 2.7 Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 200A R G = 2.7 VGE = ±15V Tj = 125°C VBus = 600V IC = 200A Tj = 125°C R G = 2.7 Fall Time Tf Min 170 Tj = 125°C Tj = 25°C Tj = , Operating Area 50 450 VCE = 600V VGE =15V IC = 200A T J = 125°C 30 Eon 400 350 300 IF ... Microsemi
Original
datasheet

5 pages,
241.5 Kb

APTGT200DU120G APT0502 APT0601 TEXT
datasheet frame
Abstract: 0V VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 200A R G = 2.7Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 200A R G = 2.7Ω VGE = ±15V Tj = 125°C VBus = 600V IC = 200A Tj = 125°C R G = 2.7Ω Fall Time Turn-on Delay Time Rise Time Turn-off , 200A VR = 600V di/dt =2500A/Âus www.microsemi.com Tj = 25°C Tj = 125°C Tc = 80°C Tj = 25 , = 600V VGE =15V IC = 200A T J = 125°C Eon 400 350 300 30 IF (A) E (mJ) 40 ... Microsemi
Original
datasheet

5 pages,
220.07 Kb

APTGT200DA120G TEXT
datasheet frame
Abstract: = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 200A R G = 2.7Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 200A R G = 2.7Ω VGE = ±15V Tj = 125°C VBus = 600V IC = 200A Tj = 125°C R G = 2.7Ω Fall Time Turn-on Delay Time Rise Time Turn-off , 200A VR = 600V di/dt =2500A/Âus www.microsemi.com Tj = 25°C Tj = 125°C Tc = 80°C Tj = 25 , Operating Area 50 450 VCE = 600V VGE =15V IC = 200A T J = 125°C Eon 400 350 300 30 ... Microsemi
Original
datasheet

5 pages,
226.67 Kb

APTGT200DH120G TEXT
datasheet frame
Abstract: Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 200A R G = 2.7Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 200A R G = 2.7Ω VGE = ±15V Tj = 125°C VBus = 600V IC = 200A , = 600V VGE =15V IC = 200A T J = 125°C Eon 400 350 300 30 IF (A) E (mJ) 40 , Characteristic of diode 400 VCE=600V D=50% RG =2.7 TJ=125°C Tc=75°C 50 ZVS 40 300 250 ZCS , APTGT200A120G APTGT200A120G Phase leg Fast Trench + Field Stop IGBT® Power Module Application • Welding ... Microsemi
Original
datasheet

5 pages,
221.33 Kb

APTGT200A120G TEXT
datasheet frame
Abstract: 30 420 Reverse Recovery Energy IF = 200A VGE = 0V IF = 200A VR = 600V di/dt =2500A/us , 600V IC = 200A R G = 2.7 Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 200A R G = 2.7 VGE = ±15V Tj = 125°C VBus = 600V IC = 200A Tj = 125°C R G = 2.7 Fall Time Tf Min 170 , Reverse Bias Safe Operating Area 50 450 VCE = 600V VGE =15V IC = 200A T J = 125°C 30 Eon , ) www.microsemi.com 4-5 APTGT200DH120G APTGT200DH120G Forward Characteristic of diode 400 VCE=600V D=50% RG =2.7 TJ ... Microsemi
Original
datasheet

5 pages,
246.73 Kb

switched reluctance motor parameter APTGT200DH120G APT0601 APT0502 TEXT
datasheet frame
Abstract: APTGT200SK120G APTGT200SK120G VCES = 1200V IC = 200A @ Tc = 80°C Buck chopper Fast Trench + Field Stop IGBT , 200A VGE = 0V IF = 200A VR = 600V di/dt =2500A/us www.microsemi.com Max Unit 350 2.1 , °C) VGE = ±15V VBus = 600V IC = 200A R G = 2.7 Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 200A R G = 2.7 VGE = ±15V Tj = 125°C VBus = 600V IC = 200A Tj = 125°C R G = 2.7 Fall , Gate Resistance Reverse Bias Safe Operating Area 50 450 VCE = 600V VGE =15V IC = 200A T J ... Microsemi
Original
datasheet

5 pages,
241.4 Kb

APTGT200SK120G APT0601 APT0502 TEXT
datasheet frame

Archived Files

Abstract Saved from Date Saved File Size Type Download
N=2.84 TT=4.32u ) *SRC=GBJ2006 GBJ2006;DI_GBJ2006 GBJ2006;Diodes;Si; 600V 20.0A 3.00us Diodes Inc. Bridge Rect. ;Diodes;Si; 600V 4.00A 3.00us Diodes Inc. Bridge Rectifier - Per Diode .MODEL DI_KBJ406G KBJ406G D ; 600V 2.00A 3.00us Diodes Inc. Bridge - for one element .MODEL DI_KBP206G KBP206G D ( IS=143n RS=21.1m ;DI_RH06;Diodes;Si; 600V 0.500A 250ns Diodes Inc. Fast Recovery Bridge Rectifier, per node .MODEL N=1.70 TT=4.32u ) *SRC=HD06;DI_HD06;Diodes;Si; 600V 0.800A 3.00us Diodes Inc. Bridge Rectifier
/datasheets/files/diodes-inc/spice-model/spicemodels_diodes_bridge-rectifiers.txt
Diodes, Inc. 04/09/2012 18.64 Kb TXT spicemodels_diodes_bridge-rectifiers.txt
600V diode. See Figure 1. Figure 1 Because of the trade-off between diode breakdown voltage and switching speed, diodes rated at 600V may not be fast is the latest hyperfast diode from ST, the STTH806TTI STTH806TTI or "600V Tandem". 600V boost diode is a key element, especially when the PFC is working in continuous mode and 600V VIRTUAL DIODE The 600V Tandem device is an original solution consisting
/datasheets/files/stmicroelectronics/stonline/press/magazine/challeng/3rdedi99/chal07.htm
STMicroelectronics 23/11/1999 8.88 Kb HTM chal07.htm
diode Family A VFmax (5A, 1255C 1255C)=1.5V trr max (1A, 50A/ m s, 30V)=50ns STTA506D STTA506D : TURBOSWITCH TM 600V (Ex.: < 1.1A for 1kVA). A very fast diode has to be used to reduce Turn ON losses in the is built with the commutation of T1 and the complementary freewheel diode D4, whereas the diode are negligible with regard to conduction losses. The average current in the diode can be estimated by making the hypothesis (with a big safety margine) that the current in the diode is a
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/4941-v1.htm
STMicroelectronics 02/04/1999 4.89 Kb HTM 4941-v1.htm
diode Family A VFmax (5A, 1255C 1255C)=1.5V trr max (1A, 50A/ m s, 30V)=50ns STTA506D STTA506D : TURBOSWITCH TM 600V (Ex.: < 1.1A for 1kVA). A very fast diode has to be used to reduce Turn ON losses in the is built with the commutation of T1 and the complementary freewheel diode D4, whereas the diode are negligible with regard to conduction losses. The average current in the diode can be estimated by making the hypothesis (with a big safety margine) that the current in the diode is a
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/4941-v2.htm
STMicroelectronics 14/06/1999 4.85 Kb HTM 4941-v2.htm
frequency STTA506D STTA506D : TURBOSWITCH TM 600V diode Family A VFmax (5A, 1255C 1255C)=1.5V trr max (1A, 50A/ m s, 30V)=50ns STTA506D STTA506D : TURBOSWITCH TM 600V diode Family B VFmax (5A, 1255C 1255C)=1.3V trr max (1A, 50A/ m s, 30V current in each diode is low (Ex.: < 1.1A for 1kVA). A very fast diode has to be used to reduce freewheel diode D4, whereas the negative sinusoidal part is built with T4 and D1 (Fig.2). Switching losses (Turn-ON and Turn-OFF) in the diode are negligible with regard to conduction losses. The
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/4941.htm
STMicroelectronics 20/10/2000 6.91 Kb HTM 4941.htm
: TURBOSWITCH TM 600V diode Family A VFmax (5A, 1255C 1255C)=1.5V trr max (1A, 50A/ m s, 30V)=50ns STTA506D STTA506D : TURBOSWITCH TM 600V diode Family B VFmax (5A, 1255C 1255C)=1.3V trr max (1A, 50A/ m s, 30V)=95ns ID1 IT4 to conduction losses. Average current in each diode is low (Ex.: < 1.1A for 1kVA). A very fast complementary freewheel diode D4, whereas the negative sinusoidal part is built with T4 and D1 (Fig.2). Switching losses (Turn-ON and Turn-OFF) in the diode are negligible with regard to conduction
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/4941-v3.htm
STMicroelectronics 25/05/2000 6.68 Kb HTM 4941-v3.htm
No abstract text available
/download/79967802-777574ZC/icap4winliblist.zip ()
Spice Models 29/07/2012 388.92 Kb ZIP icap4winliblist.zip
No abstract text available
/download/23131848-777573ZC/icap4rxrfliblist.zip ()
Spice Models 29/07/2012 211.35 Kb ZIP icap4rxrfliblist.zip
No abstract text available
/download/64018625-777570ZC/icap4rfliblist.zip ()
Spice Models 29/07/2012 401.75 Kb ZIP icap4rfliblist.zip