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ISL6627CRZ-T7 Intersil Corporation IC HALF BRDG BASED MOSFET DRIVER, MOSFET Driver ri Buy
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F501 MOS pdf

Catalog Datasheet Results Type PDF Document Tags
Abstract: fosc Vdd = 5 V ±10% 32 MHz Ambient temperature Ta - -40 to 70 °C Fan-out N MOS load 20 TTL load , 10000 - - Name Tag Data 18000 SI Last (F501*) 1F300 1F300 SD Last 1FD80 1FD80 NTP Last 1FFFF Name , Set 6654 NAR mode Set output volume (03h = minimum, FEh = maximum). OFF ON FE80h Request F500 F501 , h Reserved. Speech Ack F400h Speech acknowledgment. F500h MSM6679A-110 MSM6679A-110 ready. F501 h Operation ... OCR Scan
datasheet

41 pages,
1998.92 Kb

TQFP100-P-1414-0 f701 weighing controller MSM6679 MSM6679A-110 celluar Phone hand set block diagram VOICE RECORDER IC VOICE RECORDER IC 9600 VOICE RECORDER playback system F300 block diagram of speech recognition VOICE RECORDER circuits circuit diagram of speech recognition MSM6679A-110 abstract
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Abstract: array of basic cells, each composed of two p-channel MOS transistors and two nchannel MOS transistors. , , 2-2-2-2-input OR-AND inverter 6 NEC Function Blocks (Cont.) Block Name Drivers F501 F502 Clock driver ... OCR Scan
datasheet

8 pages,
560.24 Kb

uPD65007 F661 f422 CMOS GATE- NEC tr f422 F981 IC F922 datasheet abstract
datasheet frame
Abstract: ­30 to 70°C °C MOS load 20 Parameter Fan-out N TTL load, D0 ~ D7, WRRAM, RDRAM , Data 18000 SI Last (F501*) 200 1F300 1F300 SD Last 1FD80 1FD80 NTP Last 1FFFF 2F6 2FB 2FF , F441 to F47C F47E F47F F480 F481 - F4FF F50B F51B FE03 to FEFE Request F500 F501 F510 ... Original
datasheet

46 pages,
325.02 Kb

circuit diagram of voice recognition IE F505 MSM6679A-110 MSM6679AL-110 MSM66P54 nana electronics SHARP F102 TQFP100-P-1414-0 block diagram of speech recognition 1f300 F47c f510h voice recorder player ic MSM6679AL-110 abstract
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Abstract: ADC910 f510h = 5 V -'10% 32 MHz Ambient temperature Ta н -40 ~ 70 -'C Fan-out N MOS , - - - - - - OFF FE80h Request F500 F501 F510 F502. F503 xxxx F504 F505 ... Original
datasheet

39 pages,
302.48 Kb

voice recorder player ic voice recognizer F103h F501 MOS IE F505 f701 weighing controller F73B voice recognition processor MSM6679 VOICE RECORDER IC 9600 74H373 IC Latch 74H373 MSM6679 abstract
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Abstract: cell area is an array of basic cells, each composed of two p-channel MOS transistors and two n-channel MOS transistors, as well as four additional n-channel MOS transistors for compact RAM design. These , L432 F433 L433 F434 L434 F435 L435 F436 L436 F454 L454 Drivers F501 F502 Clock driver Dual clock driver ... OCR Scan
datasheet

12 pages,
958.45 Kb

f422 F304 F223 CMOS-6A 65630 datasheet abstract
datasheet frame
Abstract: F130H Fan-out - MOS load 1 ¡ Semiconductor MSM6679A-110 MSM6679A-110 Voice Recognition Processor DC , 18000 SI Last (F501*) 1F900 1F900 SD Last 1FD80 1FD80 NTP Last 1FFFF Reserved 200 2F6 18000 , F481 - F4FF F50B F51B FE03 to FEFE F500 F501 F510 Request F520 F522 F513 - - - ... Original
datasheet

48 pages,
338.01 Kb

F505 TQFP100-P-1414-0 nana MSM6679A-110 MSM6679 celluar Phone hand set block diagram F202H F-12X F301 92 5 voice recognition processor 74H373 MSM6679A-110 abstract
datasheet frame
Abstract: Fan-out - MOS load 1 ¡ Semiconductor MSM6679A-110 MSM6679A-110 Voice Recognition Processor DC , 18000 SI Last (F501*) 1F900 1F900 SD Last 1FD80 1FD80 NTP Last 1FFFF Reserved 200 2F6 18000 , F481 - F4FF F50B F51B FE03 to FEFE F500 F501 F510 Request F520 F522 F513 - - - ... Original
datasheet

50 pages,
353.82 Kb

VOICE RECOGNITION ALGORITHM TQFP100-P-1414-0 F43D voice recognition processor MSM6679A-110 F501 MOS MSM6679 74H373 MSM6679A-110 abstract
datasheet frame
Abstract: 85°C 20 TTL load, AD0 ~ AD7 2 TTL Load, all other outputs Fan-out - MOS load 1 , Address 08000 000 10000 100 Name Tag Data 18000 SI Last (F501*) 1F900 1F900 SD Last 1FD80 1FD80 , F441 to F47C F47E F47F F480 F481 - F4FF F50B F51B FE03 to FEFE F500 F501 F510 Request ... Original
datasheet

50 pages,
244.52 Kb

TQFP100-P-1414-0 MSM66P54 MSM6679A-110 MSM6679 F501 MOS 74H373 F300 MSM6679A-110 abstract
datasheet frame
Abstract: cell area is an array of basic cells, each composed of two p-channel MOS transistors and two n-channel MOS transistors, as well as four additional n-channel MOS transistors for compact RAM design. A cell , 2-wide 3-3-input OR-AND inverter F454 4-wide 2-2-2-2-input OR-AND inverter Clock Drivers F501 Clock ... OCR Scan
datasheet

15 pages,
742.85 Kb

F305 L435 L442 F003 Transistor TT 2246 transistor f423 transistor f422 RU89 136-PIN rj8b RJ4B NEC uPD 65658 BE09 L737 TT 2246 datasheet abstract
datasheet frame
Abstract: signals. The internal cell area is an array of basic cells, each composed of two p-channel MOS transistors and two n-channel MOS transistors, as well as four additional n-channel MOS transistors for compact , 2-wide 3-3-input OR-AND inverter F454 4-wide 2-2-2-2-input OR-AND inverter Clock Drivers F501 Clock ... OCR Scan
datasheet

15 pages,
741.32 Kb

transistor f422 res180 marking code F113 s202 marking bt08 transistor f423 bfu6 Transistor TT 2246 f422 TT 2246 F423 L603 L442 NEC uPD 65658 datasheet abstract
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