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F 915

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: MHz f 915 MHz 10dBm Pout POUT_MAX , 0 dBm POUT < 10dBm Loop Accuracy +/-4 VBATT_MIN VBATT VBATT_MAX db 880 MHz f 915 , -74 1805 MHz f 1880 MHz (RBW = 100kHz) 6 dBm dB Band Select = High 880 MHz < f < 915 , Min 880 Typ Unit Max 915 MHz 5 dBm -3 1 34 35 dBm 32.5 33 , (GSM 900) AC Characteristics (continued): 5dBmPOUT POUT_MAX 925 MHz f < 935 MHz -72 dBm TriQuint Semiconductor
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TQM7M4011
Abstract: 26-MAR-2009 20:07 FROM-MOBI CON HOLDINGS LTD +852-2397-0339 Tâ'"OZI P.001/002 F-915 I rtiie I yi ji m. ® DC COMPONENTS CO., LTD. RECTIFIER SPECIALISTS KBK35A THRU KBK35M TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER VOLTAGE RANGE â  50 to WOO Volts CURRENT - 35 Amperes FEATURES * Lew , .002/002 F-915 í'tt^C / oi RATING AND CHARACTERISTIC CURVES KBK35A THRU KBK35M FIG. 1 ^ MAXIMUM , Opdralinfi TttmpBrp.nrre Ran^o TJ Tate -GS |Û f - 50 'C NOTES : 1 .Measured at 1 Mb;and appliart Ri -
OCR Scan
HALF WAVE RECTIFIER k3k3 P001 KBK36B KPK36G T-Q21
Abstract: Iidle = 43 mA (Vqs = adjust) f = 915 MHz, Pi = 0 dBmW zG = ZL = 50 a 15.0 â'" â'" dBmW Drain Efficiency , p0 - Pi id - Pi f= 915 MHz , f = 915 MHz VDS = 4.8V lidle - 43 mA -15 -10 -5 0 5 INPUT POWER P; (dBmW) 10 Po - VG id - vG f = 915 MHz , f- 915 MHz VDS = 4.8V Pi - 0 dBmW -
OCR Scan
2SK3077 961001EAA1
Abstract: 90.00 MHz SAW Filter · Surface Acoustic Wave Resonator Filter · Low-Loss, Coupled-Resonator Quartz Design · Simple External Impedance Matching · F-915 Metal Thru-Hole Package SF90 Absolute Maximum Rating (Ta=25°C) Parameter Rating Unit +0 dBm Operating Temperature Range -10 ~ +65 °C Storage Temperature Range -35 ~ +85 °C CW RF Power , - 682//-2.12 usec //pF NS = Not Specified Package Outline (F-915) Pin Configuration 1 Vanlong Technology
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SF-90 SF90
Abstract: 12 13 14 15 0 16 Supply Voltage VDD (V) VAPC, T, VSWR (in) vs. VDD (2) 6 10 f=915 MHz , f = 915 MHz Pin = 2 mW Tc = 25°C Rg = Rl = 50 VDD=15.6 V VDD=15.6 V 12.5 V 10.8 V 30 T 20 12.5 V 20 , Input Power Pin (mW) VAPC, T, VSWR (in) vs. Pin (2) 6 10 f=915 MHz, VDD=12.5 V, Pout=13 W, Tc , 900 905 910 20 2 10 1 0 890 0 915 Frequency f (MHz) 10 Efficiency T (% , 1996 Application For GSM CLASS2 890 to 915 MHz Features · Low power control current: 0.9 mA Typ · Hitachi Semiconductor
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PF0121 blo2RN1-R62 1ss106 application note 1SS106 HITACHI 1SS106 Hitachi DSA002719 ADE-208-097A BL01RN1-A62-001 D-85622
Abstract: °C Efficiency (PAE) f = 824 - 849 MHz, POUT=POUT_MAX f = 824 - 849 MHz, POUT=33 dBm f = 880 - 915 MHz,POUT , TX_Enable = L 824 MHz f 849 MHz Slope POUT /VRAMP 880 MHz f 915 MHz 10dBm Pout POUT_MAX 0dBm Pout , Accuracy VBATT_MIN VBATT VBATT_MAX 824 MHz f 849 MHz 880 MHz f 915 MHz TX Enable switching time Rise , Limits Min 824 880 -3 1 Typ Max 849 915 5 Unit MHz dBm Output Power 10:1 -10 -15 0 -5 -5 dBm dBm , (continued): 5dBmPOUT POUT_MAX 869 MHz f < 894 MHz Rx band noise RBW =100kHz 5dBmPOUT POUT_MAX RBW TriQuint Semiconductor
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TQM7M4012 GSM850/900 GSM850
Abstract: MHz f 915 MHz TX Enable switching time Rise Time Fall Time Duty cycle ESD Ruggedness Human Body , Condition Limits Min 824 880 -3 1 Unit Max 849 915 5 MHz Typ Input Power Range dBm , POUT_MAX TC = 35°C Efficiency (PAE) f = 824 - 849 MHz, POUT=POUT_MAX f = 824 - 849 MHz, POUT=33 dBm f = 880 - 915 MHz,P OUT =POUT_MAX Input VSWR Stability (all phases) 5 dBm < POUT < 34.5 dBm POUT POUT_MAX , Characteristics (cont): Quantity Symbol Condition 5 dBm POUT POUT_MAX 869 MHz f < 894 MHz RBW = 100kHz Rx TriQuint Semiconductor
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f 849 gsm module 900
Abstract: °C) SPDT differential 17-27°F (9-15°C) Series Switch Action Calibration 66T 4490 66T 4590 , (60±3°C) 140±5°F (60±3°C) SPST differential 5-15°F (3-8°C) SPDT differential 17-27°F (9-15 , °C) Min 90°F (32°C) 17-27°F (9-15°C) Series Switch Action Open Temperature Standard , electrical loads. The 59T provides stable temperature control at all pointer settings over a 60°F (33 , temperature limit control is available with calibrations from 160° to 220°F (71° to 104°C). · The 59T is Emerson & Cuming
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LR10281 therm-o-disc 59T wiring diagram therm-o-disc 59T wiring diagram 66TM 59T4190 125 va pt dty 59T/66T CS83232V
Abstract: VCB=10V, IE=0, fâ'"1 MHz 6 pF , Sffiì<itJ Po*1 Vcc-8 V, Pin~45mW, f=915 MHz 250 300 mW mtm AVbe ' Vcb = 10 V, IE = -lö0mA, t=0.8s 80 mV . â'¢;L-x$ij^/Pulse Test 915 MHz «J8»ttiÃ"(Po)äl!lÃ"SI». 915 MHz Po Measuring Circuit Input .50 fl 7ft W, /Circuit Constant ("TU Ri [da Ica , Vces 25 V Vebo 3 V -if/Ilia t/ ? ^f^ Icp 0.5 A Ic 0.3 A Pc 1 W Tj 135 °C Tstg â'" 55â'" + , h vf;DXM)7 7° 7 A > 2.7 6 Ci, C3, C4 lOpF (j-T^'i) 3 >) h W 9 ax F 'i -y 79 A > 2.7 10 C2, C5, Cà -
OCR Scan
2SC3369 700XH F/50V
Abstract: Supply Voltage VDD (V) VAPC, T, VSWR (in) vs. VDD (2) 6 10 50 f=915 MHz, Pin=2 mW Pout=13 W, Tc , 6 8 Apc Voltage VAPC (V) T, Pout vs. VAPC (2) f = 915 MHz Pin = 2 mW Tc = 25°C Rg = Rl = , 50 f=915 MHz, VDD=12.5 V, Pout=13 W, Tc=25°C, Rg=Rl=50 3 Apc Voltage VAPC (V) V.S.W.R , 1996 Application For GSM CLASS2 890 to 915 MHz Features · Low power control current: 0.9 mA Typ , 25°C Switching time t r, t f - 1.5 2 us Pin = 2 mW, VDD = 12.5 V, Pout = 13 W Hitachi Semiconductor
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BL01RN1-A62 Power Amplifier Module for GSM DSA003712 G746
Abstract: . 24 KDS America 10901 Graruula I aw c. Overland Park, KS 66211 â'¢ f 915) 491-6X25 â'¢ FAX , . 3 rd , 5th - S erie s, 1 6 o F 2 0 p F , 3 0 p F , 3 2 p F - - 10pW - - - , -2 0 ° - + 7 0 °C F rscB i6n£S^ R S £j|6 Mode L o a d C a p a c ita n c e R e s is ta n c e 3 5 - 1 1 0 OHMS (F re q . F re q u e n c y T o le ra n c e F r e q u e n c y S t a f t lt , a n o e 6 0 °C -3 0 ? ~ + 8 5 ° C _ - C e n te r F re q u e n c y _ 2 1 ,7 0 -
OCR Scan
KDS 5J DSF1810 2058MH 491-6X12
Abstract: ) Impedance 138-174 ±0.05 5.0 1.5 50 F-11 60052//tuning 278-284 ±0.05 5.0 1.5 50 F-11, S1 350Q//tuning 138-174 4.0 6.5 2.0 50 F-11 210Q//tuning 178-326 ±3.3 4.5 1.5 50 F-11, S1, S2 15052 400-500 ±4.0 4.5 1.5 50 F-11, S1, S2 15052 â'¢ For Cordless Phone 45.36 1.0 5.0 2.0 45 F-712 5052 48.36 ±1.0 5.0 2.0 45 F-712 5052 45.36/48.36 ±1.0 5.0 2.0 45 F-915 5052 903.75 ±2.0 5.0 2.0 35 F-11, S1, S2 , F-11, S1, S2, TO-4, TO-5, TO-8 - Small size, light weight - Wide band characteristics - Phase -
OCR Scan
SF155 SUNNY TO4 package 92775 package f11 350Q// 210Q// F-712 SF110/SF462
Abstract: (3-8°C) SPDT differential 17-27°F (9-15°C) Series Switch Action Calibration 89T Limited , a 60°F (33°C) range. Lowest calibration of the adjustable range may be specified from 90°F to 140°F , be specified between 160°F (71°C) and 220°F (104°C). · The 89T mounting tabs snap into the customer , at temperatures below 32°F (0°C). 90 Typical Application The thermostats and wiring diagram , L2 T1 L4 T2 T4 3.45 (87.6) 3.45 (87.6) 89T THERM-O-DISC 150°F 89T Emerson & Cuming
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therm-o-disc 89T wiring diagram therm-o-disc 59T wiring diagram 89T13 89T33 89T13 therm-o-disc wiring diagram water level control circuit diagram
Abstract: . C Typ Polarizing Key 257-163 Flange Mount A Dia D Thread E Hole Thru Typ. H F .915 (23.2 , Weld Mount J Dia A Dia K Dia D Thread F H L Dia M Dia .035 (.9) Max .058 (1.5) ± , .120 .120 .147 .147 (.1) (1.3) (3.0) (3.0) (3.0) (3.0) (3.0) (3.7) (3.7) F Max 1.000 (25.4) 1.000 Glenair
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Z290 14S-5 10SL-4 10SL-3 14S-2 14S-6 14S-7
Abstract: 257-163 Flange Mount B Typ E Hole Thru Typ. H Insert Arrangements (See Below) F .915 (23.2 , (4.0) Max .030 (0.8) Min Panel A Thread D Dia E G .540 (13.7) D F 1.620 (41.1 , ) 1.260 (32.0) 1.210 (30.7) 1.510 (38.4) 1.460 (37.1) 1.760 (44.7) 1.710 (18.4) F Max .875 (22.2 , K Dia A Dia L Dia M Dia D Thread .035 (.9) Max H .058 (1.5) ± .002 (.1) F Glenair
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290WS018 290WS011
Abstract: TS S (dBm) @ f = HSMS- 915 MHz 2.45 GHz 5.8 GHz -56 -55 -57 2850 2852 2855 Video Bandwidth =2MHz Test , p.A Typica Voltage Senisitivity Y , Detection Sensitivity: up to 50 mV/(iW at 915 MHz up to 35 mV/nW at 2.45 GHz up to 25 mV/|iW at 5.80 GHz · , the HSMS-2860 family ofDC biased detector diodes have been designed and optimized for use from 915 MHz , ) V F - F O R W A R O VO LTA G E (V) FO R W A R D VO LTA G E (V ) FO R W A R D V O LTA G E (V -
OCR Scan
marking 2U 58 diode marking 2U diode t5 marking code KE diode L31 diode sot-23 marking diode KE MARKING- L31 HSMS-2850 5966-0928E RS-481 260CC
Abstract: VSWRin 890 30 940 915 Frequency f (MHz) 2nd H.D, 3rd H.D vs. Frequency ­30 Pin = 2 mW , H.D ­70 ­80 865 ­40 ­50 ­60 ­70 890 915 Frequency f (MHz) ­80 940 3rd , 5 f = 915 MHz Pin = 2 mW VDD = 6 V Rg=Rl=50 Tc=25 °C 50 Pout 3 40 2 30 1 , ) ­30 ­30 f = 915 MHz Pin = 2 mW VDD = 6 V Rg = Rl = 50 Tc = 25 °C ­40 2 2nd H.D (dBc , (2) 60 3 f = 915 MHz VDD = 6 V Pout = 3.2 W Rg = Rl = 50 Tc = 25 °C 3 T 2.5 50 Hitachi Semiconductor
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pf0146 pf014 vapc Hitachi DSA00313 PF0146 ADE-208-285C BLO1RN1-A62-001
Abstract: Arrangements (See Below) F .915 (23.2) Max .045 (1.1) ± .006 (.2) 257-164 Weld Mount Polarizing , .058 (1.5) ± .002 (.1) F Insert Arrangements (See Below) Insert Arrangements Shell Size - , .120 .120 .120 .147 .147 (.1) (1.3) (3.0) (3.0) (3.0) (3.0) (3.0) (3.7) (3.7) F Max Glenair
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Abstract: TS S ( dBm) @ f = HS MS- 915 MHz 2.45 GHz 5.8 GHz 2850 -57 -56 -55 2852 2855 Video Bandwidth = 2 MHz , lb = 5 |oA Typical Voltage Sei isitivity Y mV/nW) @ F= 915 MHz 2.45 GHz 5.8 GHz 22 40 30 Power in = , Sensitivity: up to 50 mV/|jW at 915 MHz up to 35 mV/|jW at 2.45 GHz up to 25 mV/|jW at 5.80 GHz · Low Flicker , been designed and optimized for use from 915 MHz to 5.8 GHz. They are ideal for KF71D and RF Tag , 250 350 Typical Capacitance CT (pF) 0.30 0.30 Ip = 0.1 mA Ip = 1.0 mA VR =-0.5 Vto-1.0V f= 1 MHz -
OCR Scan
k2915 sot143 code marking l30 SOT-23 marking l31 hsms-285x marking code 3h diode L30 SOT143 5966-2939E 59664283E
Abstract: 30.5 f=960 MHz 29 10 30 25.0 v Tcase=+25 deg.C 27.0 v 26.0 v 25.0 v Tcase=+85 deg.C f=915 MHz Tcase= +85 deg.C 20 25.0 v 29.5 10 34 36 38 40 42 20 30 34 , Power Gain Test Con ditio ns Value Un it Min. Typ. Max. 915 - 960 MHz , - dB 41 - - dBm F P 1dB ZS, ZL = 50 Output Power @ 1 dB Compression , : .1 u F C7 : 100 u F 2/6 STM961-15 TYPICAL PERFORMANCE OUTPUT POWER vs POWER GAIN STMicroelectronics
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Dow Corning TC 1996 H110 V3436
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