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Episil process

Catalog Datasheet MFG & Type PDF Document Tags

SP232EEN

Abstract: 11932 . Wafer Fab: Episil Fab Location: Taiwan Process: Episil - 1x - SC2- mah - a MS: 1087 Assembly , room25oC Episil Episil Process Date Tested 2umCmos 21-FEB2006 2umCmos 21-FEB2006 2umCmos 17 , SP232CE _ room25oC Episil Episil Process Date Tested 2umCmos 21-FEB2006 2umCmos 21 , MS1087DZ SP232CE _ room25oC Episil Episil Process Date Tested 2umCmos 21-FEB2006 2umCmos , Episil Process Date Tested 2umCmos 21-FEB2006 2umCmos 21-FEB2006 2umCmos 17-FEB2006 Tester
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SP232 SP202E SP232A SP232E SP232EEN 11932 1233 7694 SP232AET-L 08076N MS1313BZ

ESD test plan

Abstract: SP3481 Reliability and Qualification Report EPISIL 5um CMOS Process (SP3485 Product) Prepared by: G. West Manager, Quality Assurance Date: 7/14/06 EPISIL 5um CMOS Process Qualification Reviewed by , : 1567AZ Process: 5um CMOS Wafer Manufacturer: Assembly Location: Episil Carsem / Unisem - Malaysia Package Information: Package Type: 8L NSOIC PB free EPISIL 5um CMOS Process , Human Body Model. The results of each of these tests are reported below. EPISIL 5um CMOS Process
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SP3481 SP481 SP483 ESD test plan Episil process B6110282 B6110283 B6110285 RS-485 RS-422

SP232c

Abstract: Episil process Reliability and Qualification Report EPISIL 2um CMOS Process (SP232CE and SP3223EEA Products) Prepared by: G. West Manager, Quality Assurance Date: 6/9/06 EPISIL 2um CMOS Process Qualification , Type: EPISIL 2um CMOS Process Qualification SP232CE: 16L NSOIC SP3223EEA: 20L TSSOP Page 2 , 0 0 0 0 0 0 0 0 0 Life Test Results As part of the Episil process characterization and , levels for 2um Episil process were calculated and listed below. FIT Rate: 2um CMOS Episil Process
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SP232c B5C1 B5C14L50A B5C14L51A B5C14L52A B5C14L53 B5C14L54 B5C14L55

9668e

Abstract: SR 13009 : Episil Fab Location: Taiwan Process: Episil - 1x - SC2- mah - a MS: 1105 Assembly location: Carsem , Operation Foundry Process C30P44: 3 MS1105G SP3243E _ Z B 85oC3Vch Episil ar Date Tested Tester , Process C30P44: 3 MS1105G SP3243E _ Z B 85oC3Vch Episil ar Date Tested Tester 2umcmos 20 , Process C30P44: 3 MS1105G SP3243E _ Z B 85oC3Vch Episil ar Date Tested Tester 2umcmos 20 , Device Device Rev Operation Foundry Process C30P44: 3 MS1105G SP3243E _ Z B 85oC3Vch Episil
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SP3243 9668e SR 13009 BY284 2246 455e 8582E SP3243ECH 28-MAR2006 ETS564 I3243 167E03

JAN 6418

Abstract: 16166 R2 -40ºC, 25ºC, and 85ºC. Wafer Fab: Episil Fab Location: Taiwan Process: 5u CMOS MS: 697 Assembly location: CEI (Thailand) Characterization Procedure: Episil Lot number(s): BA11481 Hillview Lot number(s , foundry, Episil, in Taiwan. This characterization report summarizes data for key SP331 product family , distributions in Appendix A are arranged so that the Hillview and Episil distributions for a given parameter , Cpk (across temp) Episil Fab Distribution Mean Episil Fab Distribution Variance Episil
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697AY JAN 6418 16166 R2 4411E 111715e 5810E-03 AA11608 SP331A 11-JAN2007 638E-03 889E-03

SP232

Abstract: sp233 : Episil Fab Location: Taiwan Process: 5um CMOS MS: 989A Assembly location: CEI (Thailand) Characterization Procedure: Episil Lot number(s): A11223.1 Hillview Lot number(s): A100525.1 Temperatures , transfer from Sipex's Hillview Fab in Milpitas, CA, to a contract foundry, Episil, in Taiwan. This , so that the Hillview and Episil distributions for a given parameter are adjacent. A distribution for , Variance Hillview Fab Cpk (across temp) Episil Fab Distribution Mean Episil Fab Distribution
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SP233A SP231 SP310 SP312 SP385 sp233 SP310AEP-L 9153e by118 SP233

hl 4929

Abstract: SP486CP at -40ºC, 25ºC, and 85ºC. Wafer Fab: Episil Fab Location: Taiwan Process: 5u CMOS MS: 749 , Operation Foundry Process Date Tested Tester Test Program _ N/A EPISIL N/A _ N/A , Operation Foundry Process Date Tested Tester Test Program _ N/A EPISIL N/A _ N/A , Device Rev Operation Foundry Process Date Tested Tester Test Program _ N/A EPISIL N/A , Device Rev Operation Foundry Process Date Tested Tester Test Program _ N/A EPISIL N/A
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BA431 hl 4929 SP486CP ba43 60601e 09846 SP486CN-L SP486/487 SP486/SP487 SP487CH BA431C525 SYN1189

BY393

Abstract: BY339 , 25ºC, and 70ºC. Wafer Fab: Episil Fab Location: Taiwan Process: epi-5u MS: 641 Assembly location , Operation Foundry Process ba380chr: N/A SP320 _ MS641 char Episil Date Tested Tester , Device Rev Operation Foundry Process a855chr25: N/A SP320 _ MS641 char Episil Date , Device Rev Operation Foundry Process a855chr25: N/A SP320 _ MS641 char Episil Date , Device Rev Operation Foundry Process a855chr25: N/A SP320 _ MS641 char Episil Date
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I32005 BY393 BY339 40555 6628e 12JAN BA380CH A855CH 187E-06 715E-06 086E-06

SP485RCS-L

Abstract: 853e Fab: Episil Fab Location: Taiwan Process: 5u CMOS MS: 668 Assembly location: CEI (Thailand) Characterization Procedure: Episil Lot number(s): 563CH Temperatures: Ambient (25C), 85C, -40C Tester: LTX Test , foundry, Episil, in Taiwan. This characterization report summarizes data for key SP485R product family , 0.40466 >4.0000 nS 13.19733 0.530349 Episil Fab Distribution Mean Episil Fab Distribution Variance Episil Fab Cpk (across temp) 256.570 5.485 >4.0000 1.804 115.150E-03
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SP485RCS-L 853e SP485RE SP485REP SP485RCN SP485RCN-L SP485RCH 000E-09 563CHC-40 SYN1191 563CHH85 563CHR25

710023e06

Abstract: 60322E temperature data which are at -40ºC, 25ºC, and 85ºC. Wafer Fab: Episil Fab Location: Taiwan Process: 5u , Operation Foundry Process Date Tested Tester Test Program Sequence Retest _ N/A EPISIL , Foundry Process Date Tested Tester Test Program Sequence Retest _ N/A EPISIL N/A , Foundry Process Date Tested Tester Test Program Sequence Retest _ N/A EPISIL N/A , Operation Foundry Process Date Tested Tester Test Program Sequence Retest _ N/A EPISIL
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710023e06 60322E 87168 930596 SP488ACP SP488ACT SP488/489 BA1253 BA5032 BA1253EPCH SYN1182 SP488

17113e

Abstract: 17415E Location: Taiwan Process: Episil - 1x - SC2- mah - a MS: 1107 Assembly location: Carsem , Process n C14L53: N/A MS1107D SP3223E _ B hot85oC Episil Date Tested Tester 2umCmo 22 , Process n C14L53: N/A MS1107D SP3223E _ B hot85oC Episil Date Tested Tester 2umCmo 22 , Process n C14L53: N/A MS1107D SP3223E _ B hot85oC Episil Date Tested Tester 2umCmo 22 , Process n C14L53: N/A MS1107D SP3223E _ B hot85oC Episil Date Tested Tester 2umCmo 22
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17113e 17415E 8653E SP3232ECN-L 17075E BY388 SP3223EB SP3220 SP3222 SP3223 SP3232 C1453

TO 4818 A 12 E-V

Abstract: sp334 at -40ºC, 25ºC, and 85ºC. Wafer Fab: Episil Fab Location: Taiwan Process: epi-5u MS: 676BY Assembly location: CEI (Thailand) Characterization Procedure: Hillview Lot number(s): A98132 Episil Lot , Milpitas, CA, to a contract foundry, Episil, in Taiwan. This characterization report summarizes data for , 1.3240 157.051 14.042 2.2065 173.702 Units Episil Fab Distribution Mean Episil Fab Distribution Variance Episil Fab Cpk (across temp) 5.834 1.298 1.4980 5.781 1.309
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SP332 SP333 TO 4818 A 12 E-V sp334 17485e03 8105E SP334 BA11472 SP334ACH 23-JAN2007

MS1038

Abstract: SP509 temperature data which are at 0ºC, 25ºC, and 85ºC. Wafer Fab: Episil Fab Location: Taiwan Process: epi-2u MS: 961 Assembly location: CEI (Thailand) Characterization Procedure: Episil Lot number(s , , CA, to a contract foundry, Episil, in Taiwan. This characterization report summarizes data for key , section of this report. The distributions in Appendix A are arranged so that the Hillview and Episil , ) Episil Fab Distribution Mean Episil Fab Distribution Variance Episil Fab Cpk (across temp
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SP508 SP509 MS1038 SP508CF SP508EF 489857 BA11399 A103449 18-DEC2006

SN75179 application

Abstract: rs 485 multidrop full duplex Version 1.0.0 June 2010 171.62 KB Process Qualification Report EPISIL 5um CMOS Process Qualification Report Version 1.0.0 July 2006 1.45 MB Transfer Characterization Report SP3485 Family Episil
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SN75179 application rs 485 multidrop full duplex SP3490 RS485 LTC490 SN75179 SP3490CN-L SP3490CN-L/TR

SP483ES-L

Abstract: SP483E Episil distributions for a given parameter are adjacent. A distribution for a given parameter shows different temperature data which are at -40ºC, 25ºC, and 85ºC. Wafer Fab: Episil Fab Location: Taiwan Process: Episil -1x-sc0-mah-a MS: 901BY Assembly location: Carsem Characterization Procedure: Episil , Fab in Milpitas, CA, to a contract foundry, Episil, in Taiwan. This characterization report , Distribution Variance Hillview Fab Cpk (across temp) Episil Fab Distribution Mean Episil Fab
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SP483E SP483CN SP483EN-L SP483ES-L SP483eep-L 13007 sp483ecn SP483C B473CH A044CH47 SP483ECH

sn75180

Abstract: SP3491CN-L -207, Advantages of Enhanced Receiver Failsafe Features Version 1.0.0 June 2010 171.62 KB Process Qualification Report EPISIL 5um CMOS Process Qualification Report Version 1.0.0 July 2006 1.45 MB Transfer Characterization Report SP3485 Family Episil Characterization Report Version 1.0.0 August 2006 2.40 MB Product
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SP3491CN-L sn75180 SP3491 LTC491 SN75180 SP3491CN-L/TR SP3491EN-L

SP485EEP-L

Abstract: SP490ECN-L . PRODUCT ATTRIBUTE AFFECTED: [ ] [ ] [X] Material Change Design Change Process Change , from Hillview wafer fabrication facility to wafer foundry Episil. See attached Product List no. 08 , site. FABRICATION PROCESS QUALIFICATION COMPLETED (DATE): 5/1/06 PRODUCT CHARACTERIZATION , earliest production shipment. Product Designator: DC suffix of "E" for Episil [ ] STANDARD
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MS1326 SP1485ECN SP1485ECN-L SP1485ECP SP1485EEN SP1485EEN-L SP485EEP-L SP490ECN-L sp491ecn sp491een SP1485ECP-L

SP208CP

Abstract: Sp238act . PRODUCT ATTRIBUTE AFFECTED: [ ] [ ] [X] Material Change Design Change Process Change , from Hillview wafer fabrication facility to wafer foundry Episil. See attached Product List no. 09 , site. FABRICATION PROCESS QUALIFICATION COMPLETED (DATE): 5/1/06 PRODUCT CHARACTERIZATION , earliest production shipment. Product Designator: DC suffix of "E" for Episil [ ] STANDARD
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SP208CP SP208CP-L SP208CT SP208EA SP208EA-L SP208ECA Sp238act MS1341 SP208CT-L

Sumitomo 6730B

Abstract: JESD22-A114 : 09-138 XR5486EID-F GENERAL INFORMATION CHIP DATA PACKAGE DATA FAB: EPISIL ASSEMBLY: Unisem LOCATION: TECHNOLOGY: PROCESS: Taiwan LOCATION: PACKAGE: PKG. DIMENSION : (mm , INFORMATION CHIP DATA PACKAGE DATA FAB: EPISIL ASSEMBLY: Unisem LOCATION: TECHNOLOGY: PROCESS: Taiwan LOCATION: PACKAGE: PKG. DIMENSION : (mm) Malaysia 8Lds NSOIC 1.2u CMOS
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XR5488EID-F JESD22 100PF Sumitomo 6730B JESD22-A114 transistor A114 JESD22-78 07eV SP5486EID-F

MS1324

Abstract: SP3243EHET . PRODUCT ATTRIBUTE AFFECTED: [ ] [ ] [X] Material Change Design Change Process Change , from Hillview wafer fabrication facility to wafer foundry Episil. See attached Product List no. 07 , site. FABRICATION PROCESS QUALIFICATION COMPLETED (DATE): 5/1/06 PRODUCT CHARACTERIZATION , earliest production shipment. Product Designator: DC suffix of "E" for Episil [ ] STANDARD
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MS1324 SP3243EHET SP3243EHEY SP3243EHEY-L SP3243BCA SP3243BCA-L SP3243BCR SP3243BEY SP3243BEY-L SP3243CA SP3243CA-L SP3243CT
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