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Part Manufacturer Description Datasheet BUY
3320 Adafruit Industries TXRX MOD BLE WIFI ESP-WROOM-32 visit Digikey Buy
MR8GE5 SOURIAU QT 491051 PUR=BURNDY-ESP visit Digikey Buy
KITVALVECNTLEVM NXP Semiconductors EVAL KIT ABS ESP PWR MGMT visit Digikey Buy
AT45DQ161-SH2B-T Adesto Technologies Corporation IC FLASH 16MBIT 85MHZ 8SOIC visit Digikey Buy
W25Q16DVUZIG TR Winbond Electronics Corp IC FLASH 16MBIT 104MHZ 8USON visit Digikey Buy
W25Q16DVSNIG TR Winbond Electronics Corp IC FLASH 16MBIT 104MHZ 8SOIC visit Digikey Buy

ESP-WROOM-02 (16MBIT)

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: change without notice. Revised 02/12/98 Page 1 of 106 4Mx4, 2Mx8, 1Mx16 16Mbit Enhanced , ) 488-9095; http://www.edram.com Revised 02/12/98 Page 2 of 106 Preliminary 4Mx4, 2Mx8, 1Mx16 , . Revised 02/12/98 Page 3 of 106 4Mx4, 2Mx8, 1Mx16 16Mbit Enhanced Synchronous DRAM Preliminary , PHONE: (800) 545-DRAM; FAX: (719) 488-9095; http://www.edram.com Revised 02/12/98 Page 4 of 106 , information contained herein is subject to change without notice. Revised 02/12/98 Page 5 of 106 Enhanced Memory Systems
Original
0316409C 0316169C 0316809C 133MH

INTEL FLASH MEMORY pcn

Abstract: vf bga 02/08/00 iv Version -002 Minor text edits in Section 2.0, Device Identification, and , # = VCCQ or GND VCC = VCCMax VCCQ = VCCQMax VIN = VCCQ or GND RP# = GND ± 0.2 V VCC = VCCMax
Intel
Original
28F320B3 INTEL FLASH MEMORY pcn vf bga TE28F320B3TA100 TE28F320B3TC70 Intel AP-729 AP-729 28F004/400B3 28F008/800B3 28F016/ 160B3

298161

Abstract: 28F160C3 iv -001 Original version 02/08/01 -002 Added tWHWL/tEHEL Spec to Table 4, Write Timing , = VCCQ or GND, RP# = GND ± 0.2 V VCC = VCCMax, VCCQ = VCCQMax VIN = VCCQ or GND, RP# = GND ± 0.2 V
Intel
Original
28F800C3 28F160C3 28F320C3 28F640C3 298161 TE28F320C3TA100 AP-730
Abstract: Revised 02/12/98 ©1998 Enhanced Memory Systems. All rights reserved. The information contained herein , : (800) 545-DRAM; FAX: (719) 488-9095; http://www.edram.com Revised 02/12/98 Page 2 of 106 J9 LE , Information contained herein Is subject to change without notice. Revised 02/12/98 P a g e 3 o f 106 , : (800) 545-DRAM; FAX: (719) 488-9095; http://www.edram.com Revised 02/12/98 Page 4 of 106 191 E , without notice. Revised 02/12/98 Page 5 of 106 4Mx4, 2M x8,1M x16 16Mbit Enhanced Synchronous -
OCR Scan

DT28F016SV080

Abstract: Current Notes 1 2 2,3 2,5 5 4 Min 0 -0.2 -0.2 -0.5 Max 70 7,0 14.0 V CC U nits °C V V V mA mA , into Any Non-Supply Pin Output Short Circuit Current Notes 1 2 2,3 2,5 5 4 Min 0 -0.2 -0.2 -2.0
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OCR Scan
DT28F016SV080 16-MBIT 28F016SV 28F016SA 28F008SA 28F160S3 28F320S3

SMD MARKING CODE A12

Abstract: tRC = tRC(MIN.) ICC5 70 60 50 mA 1, 2 Self Refresh CKE 0.2 V ICC6 1 , 0.05 - 0.1 3 0.5 ± 0.1 11.76 ± 0.2 0.2 M 50 1 10.16 ± 0.13 0.0 0.15 +0.0 6 -
Infineon Technologies
Original
SMD MARKING CODE A12 39S16160CT-5 16-MB P-TSOPII-50 GPX05956

DT28F016SV80

Abstract: DT28F016SV-80 with Respect to GND 2 ­0.2 7.0 V VPP VPP Supply Voltage with Respect to GND 2,3 ­0.2 14.0 V V Voltage on any Pin (except VCC,VPP) with Respect to GND 2 ­0.5 VCC , Operating Temperature, Commercial VCC VCC with Respect to GND 2 ­0.2 7.0 V VPP VPP Supply Voltage with Respect to GND 2,3 ­0.2 14.0 V V Voltage on any Pin (except VCC,VPP , 200 µA VPP > VCC 1 0.2 5 µA RP# = GND ± 0.2V 1,6 10 15 mA VPP =
Intel
Original
DT28F016SV-80 DT28F016SV80 29054 28F016SV80 28F016SV100 56-LEAD DT28F016SV DT28F016SV-100 AP-357 AP-374

39S16800AT-8

Abstract: Q67100-Q1279 + 0.2 Vref + 0.4 -0.3 V ref-0.2 Vref - 0.4 max. Vddq+0.3 V V V V mA mA 5 5 Unit Notes Semiconductor
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OCR Scan
39S16800AT-8 Q67100-Q1279 39516800AT-10 39516800 HYB39S1640 AT-8/-10 P-TSOPI-44

2TNC

Abstract: end of this document. 07H3997 S A 14-4711 -02 R evised 0 5 /9 6 Page 12 of 100 IBM0316409C , . 07H 3997 S A 1 4-4711 -02 R evised 0 5 /9 6 Page 14 of 100 IBM0316409C IBM0316809C IBM0316169C
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OCR Scan
2TNC 100MH

39S16802AT-10

Abstract: marking t8 Notes DC input logic high levels VIH (DC) Vref + 0.2 AC input logic high levels VIH (AC , ) V V Vref - 0.2 V Vref - 0.4 V 5 Ouput minimum source dc current Ioh (dc) 16 , , SMD 10.16 +0.13 - 0.5+0.1 - 0.4 +0.05 -0.1 0.2 M 0.1 50x 50 11.76 +0.2 -
Siemens
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39S16802AT-10 marking t8 P-TSOPII-44 CAY smd marking code BX-4T smd marking T22

hitachi sh3

Abstract: fujitsu fr-v CPU Jasmine Lavender + SDRAM + gamma cor. 64 MHz 2D `00 `01 `02 `03 FUJITSU , compatible to Cremson/Scarlet ES: May `01 CS: Oct `01 MP: Jan `02 - Combination of Rose core and , audio/video hardware assistance ES: May `02 CS: Oct `02 MP: Jan `03 FUJITSU MICROELECTRONICS , : Dec `01 MP: Apr `02 Microcomponents Marketing - Upward compatible to Vermilion - On chip , controller ES: Jul `02 CS: Dec `02 MP: Apr `03 - A single chip integration of entire system
Fujitsu
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hitachi sh3 fujitsu fr-v HQFP208 bga256 power dissipation HQFP256 MB86290A

3DG6

Abstract: 29053 into any Non-Supply Pin Output Short Circuit Current Notes 1 2 2,3 2,5 5 4 Min 0 -0.2 -0.2 -0.5 Max 70 , Current into any Non-Supply Pin Output Short Circuit Current Notes 1 2 2,3 2,5 5 4 Min 0 -0.2 -0 , Current VPP Program Current VP P Erase Current 1 1,6 1,2 1 3 +1 30 0.2 10 15 4 14 IPPES V,L V|H O > o > X , Voltage Input High Voltage Output Low Voltage Output High Voltage 1 6 6 6 6 2.4 v cc -0.2 -0,3 2,0 , PowerDown Current Vpp Program Current 1,2 1 5 ± 1 30 0.2 7 17 ·p p s ü Vcc Wr IppD pA ma
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OCR Scan
3DG6 29053 28F016XS 128-K AP-398 AP-600 28F016XSB AP-610

NN5216805

Abstract: 809 npn r L n _ fcoiun»} BL=1 BL=2 DQ (output) BL=4 BL=8 BL=Full Page < £> 01 X 02 X 03 X 04 : V t f V * 03 X 04 X 05 X 06 X 0 7 X 0 8 , KCI512X Q1 X 02 X 03 BL : Burst Length CAS Latency = 2 , DQM { )write a : ' ' r tpDL c ) Préchargé W //I/I///////1 \ D 1 A 02 ) r
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OCR Scan
NN5216805 809 npn NN5216405/ NN5216405 NN5216405XX NN5216805XX
Abstract: 10.16 ± 0.13 0.8 0.05 0.4 + - 0.1 0.5 ± 0.1 11.76 ± 0.2 0.2 M 50x 0.1 50 26 1 Infineon Technologies
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HYB39S16160CT-5 HYB3916160CT-5

A9 npn

Abstract: BL=1 BL=2 DQ (output) BL=4 BL=8 BL=Full Page , 01 X 02 X 03 X 04 X 05 X 06 X X 08 . , . Burst Write CLK Command Address I BL=1 BL=2 DQ (input) BL=4 BL=8 BL=Full Page ( D256X Pi X 02 X 03 B L , (input) Command DQ (input) Command DQ (input) CL=3 CL=2 CL=1 J rp D1 X 02 X 03 X D4 ( Write
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OCR Scan
A9 npn NN5216165 NNS216165 NN5216165XX

Intel SCSP

Abstract: FLASH MEMORY 38F Version Description 02/11/03 -001 Initial release, Stacked Chip Scale Package 01/29/04
Intel
Original
PF38F1010C0ZTL0 RD28F3204C3B70 RD28F1604C3BD70 Intel SCSP FLASH MEMORY 38F intel 28f RD28F3208C3T70 RD28F3208C3B90 PF38F1010C0ZBL0 RD38F1020C0ZTL0

intel flash date code marking

Abstract: intel DOC : Non-Serviced Erase Suspend Command 02/22/95 -003 Added: Device Revision Code 03H 3.3V VCC AC Read , SPECIFICATION UPDATE REVISION HISTORY, Continued Date of Revision Version 02/01/97 -009 Updated , 297554-010 28F016SV SPECIFICATION UPDATE Errata Device Version Numbers No. 00 01 02 03 , 01 02 03 04 05 06 Page Status 31 Spec Change None in this Specification
Intel
Original
intel flash date code marking intel DOC E28F016SV-065

R-PDSO-G48 Package

Abstract: 28F1600 *0.1 ,7 11.76 ±02 50 26 â  nummi mwillliwnin »BumB UUUUtJtJUUUUUbUUdUlltlUUtlUIlHt 1 25 _ 20.95+0
Texas Instruments
Original
TMS28F1600T TMS28F1600B R-PDSO-G48 Package 28F1600 flash memory 5v 16M-bit 48 TSOP 48-PIN 16M-BIT SMJS836 16K-B 96K-B

SS35L

Abstract: AAFL1 02 / / \ ( \ \ f â' X KBC sE X H X H X Q8~)-i- (â'¢ ( BL=Full Page , \ D1 A 02 ) : ;' t D pL 1r ' Irp (CL = 1,2 and 3) Burst Length§ 4 :precharge starts
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OCR Scan
SS35L AAFL1 smd marking YB Q67100-Q1244 HYB39S16400/800/160T
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