NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
ESM3030DV - Datasheet Archive
NPN DARLINGTON POWER MODULE s s s s s s s HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL
ESM3030DV ESM3030DV NPN DARLINGTON POWER MODULE s s s s s s s HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE ISOLATED CASE (2500V RMS) EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS: s MOTOR CONTROL s SMPS & UPS s DC/DC & DC/AC CONVERTERS s WELDING EQUIPMENT ISOTOP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CEV Parameter Collector-Emitter Voltage (VBE = -5 V) V CEO(sus) Collector-Emitter Voltage (I B = 0) V EBO IC I CM IB Emitter-Base Voltage (I C = 0) Value Unit 400 V 300 V 7 V Collector Current 100 A Collector Peak Current (t p = 10 ms) 150 A A Base Current 5 I BM Base Peak Current (t p = 10 ms) 10 A P tot Total Dissipation at T c = 25 o C 225 W T stg Storage Temperature Tj V ISO -55 to 150 o C Max. Operating Junction Temperature 150 o C Insulation Withstand Voltage (AC-RMS) 2500 o C September 1997 1/8 ESM3030DV ESM3030DV THERMAL DATA R thj-case R thj-case R thc-h Thermal Resistance Junction-case (transistor) Thermal Resistance Junction-case (diode) Thermal Resistance Case-heatsink With Conductive Grease Applied Max Max 0.55 1.2 o Max 0.05 o o C/W C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit I CER # Collector Cut-off Current (R BE = 5 ) V CE = V CEV V CE = V CEV T j = 100 o C 1.5 16 mA mA I CEV # Collector Cut-off Current (V BE = -5) V CE = V CEV V CE = V CEV T j = 100 o C 1 11 mA mA I EBO # Emitter Cut-off Current (I C = 0) V EB = 5 V 1 mA V CEO(SUS) * Collector-Emitter Sustaining Voltage h FE V CE(sat) V BE(sat) di C /dt I C = 0.2 A L = 25 mH V clamp = 300 V DC Current Gain I C = 85 A V CE = 5 V Collector-Emitter Saturation Voltage IC IC IC IC IB IB IB IB 300 = = = = 60 60 85 85 A A A A = = = = 0.6 0.6 2.4 2.4 A A A A I B = 2.4 A I B = 2.4 A V 300 T j = 100 o C 1.25 1.4 1.5 1.8 T j = 100 o C 2.4 2.5 T j = 100 o C Base-Emitter Saturation Voltage I C = 85 A I C = 85 A Rate of Rise of On-state Collector V CC = 300 V R C = 0 t p = 3 µs I B1 = 0.9 A T j = 100 o C 330 2.2 V V V V 3 V V 1.8 430 A/µs · V CE (3 µs)· Collector-Emitter Dynamic Voltage V CC = 300 V R C = 5 I B1 = 0.9 A T j = 100 o C 3 6 V V CE (5 µs)· Collector-Emitter · Dynamic Voltage V CC = 300 V R C = 5 I B1 = 0.9 A T j = 100 o C 2.2 4 V 2.3 0.35 0.8 3.5 0.6 1.2 µs µs µs Storage Time Fall Time Cross-over Time I C = 60 A V BB = -5 V V clamp = 300 V L = 0.04 mH V CC = 50 V R BB = 0.6 I B1 = 0.6 A T j = 100 o C Maximum Collector Emitter Voltage Without Snubber I CWoff = 100 A V BB = -5 V L = 25 µH T j = 125 o C I B1 = 2.4 A VCC = 50 V R BB = 0.6 VF Diode Forward Voltage IF = 85 A I RM Reverse Recovery Current V CC = 200 V di F /dt = -330 A/µs T j = 100 o C ts tf tc V CEW T j = 100 o C IF = 85 A L < 50 nH Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % # See test circuits in databook introduction To evaluate the conduction losses of the diode use the following equations: VF =1.1 + 0.0045 IF P = 1.1 IF(AV) + 0.0045 I2F(RMS) 2/8 300 V 1.2 1.55 V 18 25 A ESM3030DV ESM3030DV Safe Operating Areas Thermal Impedance Derating Curve Collector-emitter Voltage Versus base-emitter Resistance Collector Emitter Saturation Voltage Base-Emitter Saturation Voltage 3/8 ESM3030DV ESM3030DV Reverse Biased SOA Foward Biased SOA Reverse Biased AOA Forward Biased AOA Switching Times Inductive Load Switching Times Inductive Load Versus Temperature 4/8 ESM3030DV ESM3030DV Dc Current Gain Typical VF Versus IF Peak Reverse Current Versus diF/dt Turn-on Switching Test Circuit Turn-on Switching Waveforms 5/8 ESM3030DV ESM3030DV Turn-on Switching Test Circuit Turn-off Switching Waveforms Turn-off Switching Test Circuit of Diode Turn-off Switching Waveform of Diode 6/8 ESM3030DV ESM3030DV ISOTOP MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 11.8 12.2 0.466 0.480 B 8.9 9.1 0.350 0.358 C 1.95 2.05 0.076 0.080 D 0.75 0.85 0.029 0.033 E 12.6 12.8 0.496 0.503 F 25.15 25.5 0.990 1.003 G 31.5 31.7 1.240 1.248 H 4 J 4.1 4.3 0.161 0.169 K 14.9 15.1 0.586 0.594 L 30.1 30.3 1.185 1.193 M 37.8 38.2 1.488 1.503 N 4 O 7.8 0.157 0.157 8.2 0.307 0.322 A G B O F E H D N J K C L M 7/8 ESM3030DV ESM3030DV Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . 8/8