SMC/DO-214AB MILSTD-202 - Datasheet Archive

 

Pb 3.0 AMPs. Surface Mount Super Fast Rectifiers SMC/DO-214AB RoHS COMPLIANCE Features Glass passivated junction chip For surface

 

ES3A - ES3J Pb 3.0 AMPs. Surface Mount Super Fast Rectifiers SMC/DO-214AB SMC/DO-214AB RoHS COMPLIANCE Features Glass passivated junction chip For surface mounted application Low-Profile Package Built-in strain relief, Ideal for automated placement Easy Pick and place Esuper fast recovery time for high efficiency High temperature soldering guaranteed: 260oC/10 seconds at terminals. Plastic material used carriers underwritters Laboratory classification 94V-0 Green compound with suffix "G" on packing code & prefix "G" on datecode. High reliability grade (AEC Q101 specified) Mechanical Data Dimensions in inches and (millimeters) Cases: Molded plastic Epoxy: UL 94V-O rate flame retardant Terminal : Pure tin plated, lead free, solderable per MILSTD-202 MILSTD-202, Method 208 guaranteed Polarity: Color band denotes cathode. Weight: 0.21 gram Packing : 16mm tape per EIA STD RS- Maximum Ratings and Electrical Characteristics Rating at 25ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Symbol ES 3A ES 3B Maximum Recurrent Peak Reverse Voltage VRRM 50 100 150 200 300 400 500 600 V Maximum RMS Voltage VRMS 35 70 105 140 210 280 350 420 V Maximum DC Blocking Voltage VDC 50 100 150 200 300 400 500 600 V Maximum Average Forward Rectified see fig.1 I(AV) 3.0 A Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) IFSM 100 A Maximum Instantaneous Forward Voltage @ 3.0A VF Maximum DC Reverse Current @ TA=25 at Rated DC Blocking Voltage @ TA=100 IR Typical Junction Capacitance (Note 1) Cj ES 3C ES 3D ES 3F 0.95 ES 3G ES 3H 1,3 ES 3J Units 1.7 V 10 500 45 uA 30 pF Typical Reverse Recovery Time (Note 2) TRR 35 Typical Thermal Resistance (Note 3) RJA RJL 47 12 TJ -55 to +150 O C -55 to +150 O C Operating Temperature Range Storage Temperature Range TSTG nS O C/W Note 1. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C. 2. Reverse Recovery Time Condition : IF=0.5A, IR=1.0A, IRR=0.25A 3. Mount on P.C. Board with 0.6" x 0.6" ( 16mm x16mm ) Copper pad areas. Page 1 of 2 Version : D09 Ratings and Characteristics Curve (ES3A Thru ES3J) FIG 1 Maximum Forward Current Derating Curve 100 90 2.5 80 Peak Forward Surge Current (A) Average Forward Current (A) 3 FIG 2 Maximum Non-Repetitive Forward Surge Current 2 1.5 1 0.5 70 60 50 8.3ms Half Sin-wave 40 30 20 10 0 0 25 50 75 100 125 0 150 1 o Lead Temperature ( C) FIG 3 Typical Forward Characteristics FIG 4 Typical Rebverse Characteristics Instantaneous Reverse Current (uA) ES3A-3D 1 ES3F-3G ES3H-3J 0.1 0.01 100 o TJ=125 C 10 o TJ=75 C 1 o TJ=25 C 0.1 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0 20 Forward Voltage (V) 40 60 80 100 120 140 Percent Rated Peak Reverse Voltage (V) Fig 5 Typical Junction Capacitance 105 100 Fig.6 Typical Transient Thermal Impedance 60 ES3A-3D 45 30 ES3F-3J 15 0 1 10 100 Reverse Voltage (V) Page 2 of 2 10 o 75 Impedance( C/W) 90 Transient Thermal Junction Capacitance (pF) 100 1000 10 Instantaneous Forward Current (A) 10 Number of Cycles At 60Hz 1 0.1 0.01 0.1 1 Heating time (Sec) 10 100 Version : D09