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Part : 185965 EQUIVALENT Supplier : Hammond Manufacturing Manufacturer : Newark element14 Stock : - Best Price : - Price Each : -
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EQUIVALENT FOR bs170

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: any need for external reset circuitry, thereby saving one precious I/O pin. Out of six I/O pins, one , drives two IR LED's through a MOSFET BS170. Note that the MOSFET and one IR LED can be saved and , such wheels, one for horizontal movement and another for the vertical movement. The wheels are , through the driving MOSFET BS170. Thus the information gets transformed into infra red light which is , circuit consisting of an IR receiver, SFH505A, for instance and an op-amp CA3140. The IR receiver Microchip Technology
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PIC12C509 equivalent of BS170 MOSFET bs170 mouse Phototransistor SERIAL MOUSE circuit two pin ir receiver led two pin ir transmitter led DS40160A/8
Abstract: AN1862 APPLICATION NOTE TV CHASSIS HARDWARE DESIGN RULES FOR ST92X195 MICROCONTROLLERS 1 , analog disturbance which could cause the IC ground to float. All ground pins for the ST92x195 (GND , lines are required for the ST92x195: ­ one Analog power supply line (AVDD), which groups the AVDD1 , supply and not to the ST92x195 VDD or AVDD lines. 2.2.2 External Memory Power Supply for ROMless Device , . 100nF + 10uF ST92195 Device 10 uH +5V Note: For ST92x195 family devices, since there is STMicroelectronics
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equivalent of BS250 mosfet bs250 equivalent CHINA TV MEMORY RESET RGB filter BS170 SMD 9221 ST
Abstract: logic level MOSFET for Q3 (such as a BS170) results in lower system voltage losses and significantly , software or other copyrighted work, you may have a right to sue for relief under that Act. Information , -9000 quality system certification for its worldwide headquarters, design and wafer fabrication facilities in , 's quality system processes and procedures are QS-9000 compliant for its PICmicro® 8-bit MCUs, KEELOQ® code , , Microchip's quality system for the design and manufacture of development systems is ISO 9001 certified Microchip Technology
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CERAMIC DISK CAPACITOR selling fan circuit DS51306 2N2222A npn transistor transistor MOSFET BS170 PWM 12V fan speed control circuit TC64X/TC64XB DS21401C DS21401C- 11F-3 DK-2750 D-85737
Abstract: many on-chip functions. The driver output stage can deliver 1.5A, which is very important for this type , efficient for PFC applications. It uses a dedicated diode bridge to rectify the AC input voltage to DC, which is then followed by the boost section. See Figure 2. This approach is good for a low to medium , application and it is necessary for the designer to deal with the problem of how to dissipate the heat in , topology presented in this paper avoids the need for the rectifier input bridge yet maintains the classic STMicroelectronics
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AN1606 L4981 800w power amplifier circuit diagram L4981 PFC L4981A APPLICATION NOTES PFC Bridgeless Rectifier bridgeless boost rectifier STW26NM50F AN628 AN824
Abstract: technology for a multi-cell battery charger. Specific design techniques and recommendations are presented. The powerful software algorithms that are used in this design can be adapted for various applications. Introduction o Common multiple-cell configurations for Li-Ion and Li-Pol cells in battery packs consist , and the necessary power for notebooks, as well as medical and industrial applications. Problems can , . Revision A Leads to cell damage if the charger monitors only the summary voltage. For example, if the Cypress Semiconductor
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AN2258 AN2107 AN2180 balancing resistors LM2576 step up converter cell balancing 0.1u 50v charge balance converter 20p06hl CY8C27
Abstract: 470 1W BS170 T1: Ferroxcube Pot Core #1811 P3C8 Primary/Sec. Turns Ratio = 18:6 Gapped for LP = , SCANSWITCHTM Designer's MJL16218* NPN Bipolar Power Deflection Transistor For High and Very High , designed for use in horizontal deflection circuits for 20 mm diameter neck, high and very high resolution , Collector­Emitter Leakage Current - 250 uA Max at 1500 Volts - VCES · High Emitter­Base Breakdown Capability For , Characteristic Thermal Resistance - Junction to Case Lead Temperature for Soldering Purposes 1/8 from the Motorola
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MJ11016 equivalent ferroxcube P3C8 MC7812 MOTOROLA mc7812 motorola bipolar transistor MOTOROLA TRANSISTOR MJL16218/D
Abstract: 470 1W BS170 T1: Ferroxcube Pot Core #1811 P3C8 Primary/Sec. Turns Ratio = 18:6 Gapped for LP = , SCANSWITCHTM Designer's MJL16218* NPN Bipolar Power Deflection Transistor For High and Very High , designed for use in horizontal deflection circuits for 20 mm diameter neck, high and very high resolution , Collector­Emitter Leakage Current - 250 uA Max at 1500 Volts - VCES · High Emitter­Base Breakdown Capability For , Characteristic Thermal Resistance - Junction to Case Lead Temperature for Soldering Purposes 1/8 from the Motorola
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MJ11016 MC7812 equivalent MJE-15031 MR856 MUR460 2N5337
Abstract: . a BS170 or BSS123 as driver) output pin of the uC for controlling e. g. a LED (connection of e. g. a BS170 or BSS123 as driver) input for possible switch (must be active low, maximum input voltage , . Interface Driver 6.3. I / O Functions 6.4. Instructions for Building HITAG Proximity Antennas 6.4.1 , 6.4.8. Procedure for Practical Antenna Design 6.4.9. Reference Antennas 6.5. Possible Sources of , Data sheet status Objective specification This data sheet contains target or goal specifications for Philips Semiconductors
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CM400 PCF793X PCF793 H400X HITAG 2 protocol HITAG micro PROTOCOL 9352 339 00122 CA94088-3409 SCB52
Abstract: *Tektronix *P­6042 or *Equivalent RBSOA L = 200 uH RB2 = 0 VCC = 20 Volts RB1 selected for desired , SCANSWITCHTM Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High , specifically designed for use in horizontal deflection circuits for 20 mm diameter neck, high and very , VCES High Emitter­Base Breakdown Capability For High Voltage Off Drive Circuits - 9.0 Volts (Min , Unit RJC 1.56 _C/W TL 260 _C RMS Isolation Voltage(2) (for 1 sec, TA = 25_C, Rel Motorola
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pk mur460 MUR460 PK MC1391P MJF16204 BS170 Equivalent amps710 MJE16204/D E69369
Abstract: Bipolar Power Deflection Transistor For High and Very High Resolution Monitors MJW16212* The MJW16212 is a state­of­the­art SWITCHMODETM bipolar power transistor. It is specifically designed for use in horizontal deflection circuits for 20 mm diameter neck, high and very high resolution, full page , - 250 uA Max at 1500 Volts - VCES · High Emitter­Base Breakdown Capability For High Voltage Off , Vdc Emitter­Base Voltage RMS Isolation Voltage (2) (for 1 sec, TA = 25_C, Rel. Humidity < 30 Motorola
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MJF18002 MJE18002 MJF18004 MJE18004 MJF18006 MJE18006 BS170 MOTOROLA MJF18008 MJE18008 MJW16212/D
Abstract: ON Semiconductort MJW16212 * SCANSWITCHTM NPN Bipolar Power Deflection Transistor For High , power transistor. It is specifically designed for use in horizontal deflection circuits for 20 mm , High Emitter­Base Breakdown Capability For High Voltage Off Drive Circuits - 8.0 Volts (Min , Vdc Emitter­Base Voltage RMS Isolation Voltage (2) (for 1 sec, TA = 25_C, Rel. Humidity < 30 , Temperature Range TJ, Tstg W/_C Preferred devices are ON Semiconductor recommended choices for future ON Semiconductor
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2N6191 MC1391 MJF16212 MJH16212 transistor mjw16212
Abstract: Bipolar Power Deflection Transistor For High and Very High Resolution Monitors MJW16212* The MJW16212 is a state­of­the­art SWITCHMODETM bipolar power transistor. It is specifically designed for use in horizontal deflection circuits for 20 mm diameter neck, high and very high resolution, full page , - 250 uA Max at 1500 Volts - VCES · High Emitter­Base Breakdown Capability For High Voltage Off , Isolation Voltage (2) (for 1 sec, TA = 25_C, Rel. Humidity < 30%) VISOL Per Fig. 14 Per Fig. 15 Motorola
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EQUIVALENT FOR mjf18004 MOTOROLA MJW16212
Abstract: , representation or guarantee regarding the suitability of its products for any particular purpose, nor does , parameters, including "Typicals" must be validated for each customer application by customer's technical , products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other , may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized ON Semiconductor
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ngb15n41 mtd3055et4 transistor equivalent mtp2955v sot 223 marking code AH DL135 BSS84L SGD507/D
Abstract: disk for quick selection of product. This versatile disk may be obtained by contacting a Motorola sale , . Device types shaded in Tables 1 through 8 are preferred devices recommended for new designs. TMOS Power , new product Shaded devices are preferred devices and are recommended for new designs. â HMRHnmHHBBn , devices and are recommended for new des'gns. MOTOROLA TMOS POWER MOSFET DATA 1-4 MOTOROLA SC XSTRS/R F , 3-129 â'¢ (ft 25:C Shaded devices are preferred devices and are recommended for new designs. MOTOROLA -
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1RFZ40 1RF150 MTP25N10E MTP35N06E mth7n50 Transistor BUZ80a equivalent DK101/D MTP2P50 MTP2P45 MTP3P25 MTP5P25 MTP8P25
Abstract: Application Note CAN Physical Layer Concepts for the P8xC592 Microcontroller Harald Eiselc , . 3 Which Physical Layers are Suitable for C A N , .5 ISO Drafts for the CAN Physical Layer , muldtnaster communication protocol primarily intended for real-time control and multiplex-wiring applications , transmission medium. Up to now the ISO has worked out two drafts for CAN applications in road vehicles -
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82C250T 59012 h 331 BC547b smd pc74hct4066 HKI/AN91027 PCA82C250T CE598
Abstract: the capacitor equivalent series resistance (ESR) and, for high current [23] http://onsemi.com , control the operating point for load variations. The equivalent MOSFET is the MTW7N80E with a BVDSS of , growth of SWITCHMODETM Power Supplies (SMPS) worldwide makes this market one of the most important for manufacturers of power semiconductors. It is particularly important for manufacturers of devices in the 3 A to , 50 to 1000 W. Although MOSFETs are often preferred for the new designs, ON Semiconductor has ON Semiconductor
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schematic smps 300W ferrite thomson lcc thomson ferrites MC7815T BS170 application note smps circuit diagram of 300W AN1320/D 300-W MJW180 MJW18010
Abstract: transformer is smaller for the same output power than that of an equivalent Flyback inductor. 4. Output , equation doesn't take into account the capacitor equivalent series resistance (ESR) and, for high current , operating point for load variations. The equivalent MOSFET is the MTW7N80E with a BVDSS of 800 V, is , are needed for single switch designs for these applications. The continuous growth of SWITCHMODETM Power Supplies (SMPS) worldwide makes this market one of the most important for manufacturers of power ON Semiconductor
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MBR28045 mr506 equivalent Full-bridge LLC resonant converter MPSW44 Motorola Bipolar Power Transistor Data m0c8101
Abstract: transformer is smaller for the same output power than that of an equivalent Flyback inductor. 4. Output , take into account the capacitor equivalent series resistance (ESR) and, for high current outputs , most important for manufacturers of power semiconductors. It is particularly important for , deliver power in the range of 50 to 1000 W. Although MOSFETs are often preferred for the new designs , : The planar process is well established for small signal transistors; however, due to its limited Motorola
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AN1320 527 MOSFET TRANSISTOR motorola etd39 core type smps transformer design SMPS CIRCUIT DIAGRAM USING TRANSISTORS 1200 volt 200 ampere MOSFET chopper transformer winding MBR28045V
Abstract: output pins of the microcontroller for controlling e.g. a LED (connection of e.g. a BS170 or BSS123 as , of the antenna Checking the antenna voltage VL Procedure for practical antenna design Reference , INSTRUCTIONS FOR BUILDING HITAG PROXIMITY ANTENNAS DISCLAIMERS Philips Semiconductors Product , · Serial CMOS interface · Meets all requirements for CE and EMI approval. The HITAG product , /write system that works with passive transponders is suitable for various applications. Inductive Philips Semiconductors
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HTCM400 HITAG PROTOCOL HTRM440 Interface Protocol Reader NFM61R10T102 ferrite antenna 125 khz 741 metallic ic pin diagram BS170 116 SCA73
Abstract: BS170 2 GATE 3 SOURCE ® MAXIMUM RATINGS Rating Drain ­ Source Voltage Gate­Source Voltage - , Transistors, FETs and Diodes Device Data 4­11 BS170 RESISTIVE SWITCHING +25 V ton 125 40 pF 50 1.0 , indicated below to order any of the SOT-23 and SOT-223 packages. (See Section 6 on Packaging for additional , Fold Boxes or Reels. Fan Fold Boxes and Radial Tape Reel are the best methods for capturing devices for , . *Refer to Section 6 on Packaging for Style code characters and additional information on ordering ON Semiconductor
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BC237 bs170 replacement BC30 transistor K 2056 226AA MM3001 MM3725 MM4001 MMAD1106 MMBF4856LT1
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