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LM3550SPX/NOPB Texas Instruments A Flash LED Driver with Automatic Vf and ESR Detection for Mobile Camera Systems 20-UQFN -30 to 85 visit Texas Instruments
LM3550SP/NOPB Texas Instruments A Flash LED Driver with Automatic Vf and ESR Detection for Mobile Camera Systems 20-UQFN -30 to 85 visit Texas Instruments Buy
ISL8016CIR1EVAL1Z Intersil Corporation Evaluation Board for ISL8016 visit Intersil
ISL59923IRZ-EVALZ Intersil Corporation Evaluation Board for ISL59923 Video Delay Line visit Intersil
ISL28236SOICEVAL1Z Intersil Corporation Evaluation Board for ISL28236 Operational Amplifier visit Intersil
ISL59922IRZ-EVALZ Intersil Corporation Evaluation Board for ISL59922 Video Delay Line visit Intersil

EQUIVALENT FOR bs170

Catalog Datasheet MFG & Type PDF Document Tags

equivalent of BS170

Abstract: MOSFET bs170 any need for external reset circuitry, thereby saving one precious I/O pin. Out of six I/O pins, one , drives two IR LED's through a MOSFET BS170. Note that the MOSFET and one IR LED can be saved and , such wheels, one for horizontal movement and another for the vertical movement. The wheels are , through the driving MOSFET BS170. Thus the information gets transformed into infra red light which is , circuit consisting of an IR receiver, SFH505A, for instance and an op-amp CA3140. The IR receiver
Microchip Technology
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equivalent of BS170 MOSFET bs170 mouse Phototransistor SERIAL MOUSE circuit two pin ir receiver led two pin ir transmitter led PIC12C509 DS40160A/8

equivalent of BS250

Abstract: equivalent of BS170 AN1862 APPLICATION NOTE TV CHASSIS HARDWARE DESIGN RULES FOR ST92X195 MICROCONTROLLERS 1 , analog disturbance which could cause the IC ground to float. All ground pins for the ST92x195 (GND , lines are required for the ST92x195: ­ one Analog power supply line (AVDD), which groups the AVDD1 , supply and not to the ST92x195 VDD or AVDD lines. 2.2.2 External Memory Power Supply for ROMless Device , . 100nF + 10µF ST92195 Device 10 µH +5V Note: For ST92x195 family devices, since there is
STMicroelectronics
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equivalent of BS250 mosfet bs250 equivalent CHINA TV MEMORY RESET EQUIVALENT FOR bs170 mosfet bs250 BS170 SMD

CERAMIC DISK CAPACITOR

Abstract: selling fan circuit logic level MOSFET for Q3 (such as a BS170) results in lower system voltage losses and significantly , software or other copyrighted work, you may have a right to sue for relief under that Act. Information , -9000 quality system certification for its worldwide headquarters, design and wafer fabrication facilities in , 's quality system processes and procedures are QS-9000 compliant for its PICmicro® 8-bit MCUs, KEELOQ® code , , Microchip's quality system for the design and manufacture of development systems is ISO 9001 certified
Microchip Technology
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CERAMIC DISK CAPACITOR selling fan circuit DS51306 2N2222A npn transistor transistor MOSFET BS170 TC64X TC64X/TC64XB DS21401C DS21401C- 11F-3 DK-2750 D-85737

800w power amplifier circuit diagram

Abstract: L4981 PFC many on-chip functions. The driver output stage can deliver 1.5A, which is very important for this type , efficient for PFC applications. It uses a dedicated diode bridge to rectify the AC input voltage to DC, which is then followed by the boost section. See Figure 2. This approach is good for a low to medium , application and it is necessary for the designer to deal with the problem of how to dissipate the heat in , topology presented in this paper avoids the need for the rectifier input bridge yet maintains the classic
STMicroelectronics
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AN1606 L4981 800w power amplifier circuit diagram L4981 PFC schematic diagram AC to DC converter 800W L4981A APPLICATION NOTES PFC Bridgeless Rectifier STW26NM50F AN628 AN824

balancing resistors

Abstract: LM2576 step up converter technology for a multi-cell battery charger. Specific design techniques and recommendations are presented. The powerful software algorithms that are used in this design can be adapted for various applications. Introduction o Common multiple-cell configurations for Li-Ion and Li-Pol cells in battery packs consist , and the necessary power for notebooks, as well as medical and industrial applications. Problems can , . Revision A Leads to cell damage if the charger monitors only the summary voltage. For example, if the
Cypress Semiconductor
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AN2258 AN2107 AN2180 balancing resistors LM2576 step up converter cell balancing 0.1u 50v charge balance converter 20p06hl CY8C27

MJ11016 equivalent

Abstract: ferroxcube P3C8 470 1W BS170 T1: Ferroxcube Pot Core #1811 P3C8 Primary/Sec. Turns Ratio = 18:6 Gapped for LP = , SCANSWITCHTM Designer's MJL16218* NPN Bipolar Power Deflection Transistor For High and Very High , designed for use in horizontal deflection circuits for 20 mm diameter neck, high and very high resolution , Collector­Emitter Leakage Current - 250 µA Max at 1500 Volts - VCES · High Emitter­Base Breakdown Capability For , Characteristic Thermal Resistance - Junction to Case Lead Temperature for Soldering Purposes 1/8 from the
Motorola
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MJ11016 equivalent ferroxcube P3C8 mc7812 MC7812 MOTOROLA MOTOROLA TRANSISTOR motorola bipolar transistor MJL16218/D

MJ11016 equivalent

Abstract: MC7812 470 1W BS170 T1: Ferroxcube Pot Core #1811 P3C8 Primary/Sec. Turns Ratio = 18:6 Gapped for LP = , SCANSWITCHTM Designer's MJL16218* NPN Bipolar Power Deflection Transistor For High and Very High , designed for use in horizontal deflection circuits for 20 mm diameter neck, high and very high resolution , Collector­Emitter Leakage Current - 250 µA Max at 1500 Volts - VCES · High Emitter­Base Breakdown Capability For , Characteristic Thermal Resistance - Junction to Case Lead Temperature for Soldering Purposes 1/8 from the
Motorola
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MJ11016 MC7812 equivalent BS170 MOTOROLA MC1391P MJE-15031 2N5337

PCF793X

Abstract: H400X . a BS170 or BSS123 as driver) output pin of the µC for controlling e. g. a LED (connection of e. g. a BS170 or BSS123 as driver) input for possible switch (must be active low, maximum input voltage , . Interface Driver 6.3. I / O Functions 6.4. Instructions for Building HITAG Proximity Antennas 6.4.1 , 6.4.8. Procedure for Practical Antenna Design 6.4.9. Reference Antennas 6.5. Possible Sources of , Data sheet status Objective specification This data sheet contains target or goal specifications for
Philips Semiconductors
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CM400 PCF793X H400X PCF793 HITAG 2 protocol 9352 339 00122 HITAG micro PROTOCOL CA94088-3409 SCB52

pk mur460

Abstract: MC1391P *Tektronix *P­6042 or *Equivalent RBSOA L = 200 µH RB2 = 0 VCC = 20 Volts RB1 selected for desired , SCANSWITCHTM Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High , specifically designed for use in horizontal deflection circuits for 20 mm diameter neck, high and very , VCES High Emitter­Base Breakdown Capability For High Voltage Off Drive Circuits - 9.0 Volts (Min , Unit RJC 1.56 _C/W TL 260 _C RMS Isolation Voltage(2) (for 1 sec, TA = 25_C, Rel
Motorola
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pk mur460 MUR460 PK amps710 BS170 Equivalent 221D 2N6191 MJE16204/D E69369

EQUIVALENT FOR mjf18004

Abstract: MJF18006 Bipolar Power Deflection Transistor For High and Very High Resolution Monitors MJW16212* The MJW16212 is a state­of­the­art SWITCHMODETM bipolar power transistor. It is specifically designed for use in horizontal deflection circuits for 20 mm diameter neck, high and very high resolution, full page , - 250 µA Max at 1500 Volts - VCES · High Emitter­Base Breakdown Capability For High Voltage Off , Vdc Emitter­Base Voltage RMS Isolation Voltage (2) (for 1 sec, TA = 25_C, Rel. Humidity < 30
Motorola
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MJF18002 MJE18002 MJF18004 MJE18004 MJF18006 MJE18006 EQUIVALENT FOR mjf18004 MJF18008 MJW16212/D

2N5337

Abstract: 2N6191 ON Semiconductort MJW16212 * SCANSWITCHTM NPN Bipolar Power Deflection Transistor For High , power transistor. It is specifically designed for use in horizontal deflection circuits for 20 mm , High Emitter­Base Breakdown Capability For High Voltage Off Drive Circuits - 8.0 Volts (Min , Vdc Emitter­Base Voltage RMS Isolation Voltage (2) (for 1 sec, TA = 25_C, Rel. Humidity < 30 , Temperature Range TJ, Tstg W/_C Preferred devices are ON Semiconductor recommended choices for future
ON Semiconductor
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MJF16212 MJH16212 MR856 MC1391 transistor mjw16212

EQUIVALENT FOR mjf18004

Abstract: MOTOROLA MJW16212 Bipolar Power Deflection Transistor For High and Very High Resolution Monitors MJW16212* The MJW16212 is a state­of­the­art SWITCHMODETM bipolar power transistor. It is specifically designed for use in horizontal deflection circuits for 20 mm diameter neck, high and very high resolution, full page , - 250 µA Max at 1500 Volts - VCES · High Emitter­Base Breakdown Capability For High Voltage Off , Isolation Voltage (2) (for 1 sec, TA = 25_C, Rel. Humidity < 30%) VISOL Per Fig. 14 Per Fig. 15
Motorola
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MJE18008 MOTOROLA MJW16212

BSS84L

Abstract: transistor equivalent mtp2955v , representation or guarantee regarding the suitability of its products for any particular purpose, nor does , parameters, including "Typicals" must be validated for each customer application by customer's technical , products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other , may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized
ON Semiconductor
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BSS84L transistor equivalent mtp2955v amplifier, sot-89, H1 mtd3055et4 ngb15n41 sot 223 marking code AH SGD507/D

1RFZ40

Abstract: 1RF150 disk for quick selection of product. This versatile disk may be obtained by contacting a Motorola sale , . Device types shaded in Tables 1 through 8 are preferred devices recommended for new designs. TMOS Power , new product Shaded devices are preferred devices and are recommended for new designs. â HMRHnmHHBBn , devices and are recommended for new des'gns. MOTOROLA TMOS POWER MOSFET DATA 1-4 MOTOROLA SC XSTRS/R F , 3-129 â'¢ (ft 25:C Shaded devices are preferred devices and are recommended for new designs. MOTOROLA
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OCR Scan
1RFZ40 1RF150 MTP25N10E MTP35N06E mth7n50 Transistor BUZ80a equivalent DK101/D MTP2P50 MTP2P45 MTP3P25 MTP5P25 MTP8P25

82C250T

Abstract: BC547b smd Application Note CAN Physical Layer Concepts for the P8xC592 Microcontroller Harald Eiselc , . 3 Which Physical Layers are Suitable for C A N , .5 ISO Drafts for the CAN Physical Layer , muldtnaster communication protocol primarily intended for real-time control and multiplex-wiring applications , transmission medium. Up to now the ISO has worked out two drafts for CAN applications in road vehicles
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OCR Scan
82C250T BC547b smd pc74hct4066 59012 h 331 HKI/AN91027 PCA82C250T CE598

schematic smps 300W

Abstract: ferrite thomson lcc the capacitor equivalent series resistance (ESR) and, for high current [23] http://onsemi.com , control the operating point for load variations. The equivalent MOSFET is the MTW7N80E with a BVDSS of , growth of SWITCHMODETM Power Supplies (SMPS) worldwide makes this market one of the most important for manufacturers of power semiconductors. It is particularly important for manufacturers of devices in the 3 A to , 50 to 1000 W. Although MOSFETs are often preferred for the new designs, ON Semiconductor has
ON Semiconductor
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schematic smps 300W ferrite thomson lcc thomson ferrites smps circuit diagram of 300W MC7815T BS170 application note AN1320/D 300-W MJW180 MJW18010

circuit diagram of mosfet based smps power supply

Abstract: MBR28045 transformer is smaller for the same output power than that of an equivalent Flyback inductor. 4. Output , equation doesn't take into account the capacitor equivalent series resistance (ESR) and, for high current , operating point for load variations. The equivalent MOSFET is the MTW7N80E with a BVDSS of 800 V, is , are needed for single switch designs for these applications. The continuous growth of SWITCHMODETM Power Supplies (SMPS) worldwide makes this market one of the most important for manufacturers of power
ON Semiconductor
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circuit diagram of mosfet based smps power supply MBR28045 Full-bridge LLC resonant converter mr506 equivalent MPSW44 m0c8101

527 MOSFET TRANSISTOR motorola

Abstract: Motorola Bipolar Power Transistor Data transformer is smaller for the same output power than that of an equivalent Flyback inductor. 4. Output , take into account the capacitor equivalent series resistance (ESR) and, for high current outputs , most important for manufacturers of power semiconductors. It is particularly important for , deliver power in the range of 50 to 1000 W. Although MOSFETs are often preferred for the new designs , : The planar process is well established for small signal transistors; however, due to its limited
Motorola
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527 MOSFET TRANSISTOR motorola Motorola Bipolar Power Transistor Data SMPS CIRCUIT DIAGRAM USING bipolar TRANSISTORS etd39 core type smps transformer design 1200 volt 200 ampere MOSFET SMPS CIRCUIT DIAGRAM USING TRANSISTORS AN1320

HTRM440 Interface Protocol Reader

Abstract: HITAG PROTOCOL output pins of the microcontroller for controlling e.g. a LED (connection of e.g. a BS170 or BSS123 as , of the antenna Checking the antenna voltage VL Procedure for practical antenna design Reference , INSTRUCTIONS FOR BUILDING HITAG PROXIMITY ANTENNAS DISCLAIMERS Philips Semiconductors Product , · Serial CMOS interface · Meets all requirements for CE and EMI approval. The HITAG product , /write system that works with passive transponders is suitable for various applications. Inductive
Philips Semiconductors
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HTRM440 Interface Protocol Reader HITAG PROTOCOL NFM61R10T102 ferrite antenna 125 khz BS170 116 741 metallic ic pin diagram HTCM400 SCA73

bs170 replacement

Abstract: BC237 BS170 2 GATE 3 SOURCE ® MAXIMUM RATINGS Rating Drain ­ Source Voltage Gate­Source Voltage - , Transistors, FETs and Diodes Device Data 4­11 BS170 RESISTIVE SWITCHING +25 V ton 125 40 pF 50 1.0 , indicated below to order any of the SOT-23 and SOT-223 packages. (See Section 6 on Packaging for additional , Fold Boxes or Reels. Fan Fold Boxes and Radial Tape Reel are the best methods for capturing devices for , . *Refer to Section 6 on Packaging for Style code characters and additional information on ordering
ON Semiconductor
Original
bs170 replacement BC237 BC30 transistor K 2056 226AA MM3001 MM3725 MM4001 MMAD1106 MMBF4856LT1
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