EP51E ECSP-1008 SCH1301 SCH1305 SCH2315 SCH1417 SCH1302 SCH1310 SCH1306 SCH1402

MOSFET Series '05-05 TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Telephone: 81-(0)3-3837-6339,

Ordering number: EP51E EP51E MOSFET Series '05-05 TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Telephone: 81-(0)3-3837-6339, 6340, 6342, Facsimile: 81-(0)3-3837-6377 SANYO Electric Co.,Ltd. Semiconductor company Homepage URL: http://www.semic.sanyo.co.jp/index_e.htm This catalog provides information as of May, 2005. Specifications and information herein are subject to change without notice. Printed on 100% Recycled Paper Printed in Japan / May 2005 2.5k IM Features for SANYO MOSFETs SANYO MOSFET series devices respond to the increasingly advanced and diverse functionality and lower power consumption provided by the latest end products by the use of micro-fabrication processes and the latest process technologies. SANYO MOSFET devices achieve ultralow on resistance, low-voltage drive, and lower capacitance by the use of fine fabrication processes, and respond to the requirements for lower power consumption and higher frequency in end products. Furthermore, the ultrahigh breakdown voltage MOSFET series achieves the industry's highest voltage class (VDSS : 1500V) by the use of a high breakdown voltage process with which bipolar transistors have a proven track record. SANYO provides an extensive product line of MOSFET devices, from low-voltage devices to ultrahigh voltage devices to support the end products with the advanced and diverse functionality. Requirements on MOSFET Devices CONTENTS Striving for ideal performance Features for SANYO MOSFETs . 0 1 Lower-voltage drive Support for single battery cell drive (1.5V) Lower on resistance Support for reduced power dissipation Higher-speed switching Support for higher-frequency and smaller end products Resistance to ESD Support for productivity and reliability requirements Higher breakdown voltage Highly resistant to overvoltage Intelligent increased density Application Area Map (SANYO MOSFET Topics) . 0 2 Trench Structure MOSFET Series . 0 4 Package Development Trend and Road Map Surface Mount Package Type . 0 5 . 0 6 Lead Package Type . 0 9 PicoMOSTM Series Product Line up . 1 0 Naming Rules . 1 2 Line Up . 1 4 Electrical Connection Diagrams . 4 0 Product Line of ExPDs . 4 2 The Example of Application. 4 4 1 Application Area Map -SANYO MOSFET TopicsApplication Area Map -SANYO MOSFET TopicsProduct Map 100 Low-Voltage System Series Medium Voltage System Series Automotive and motor market Switching Power Supply market (Japanese domestic and worldwide markets) Personal computer market 10 ID(A) Laptop PC Notebook PC HDD Printer W-LAN DVD-R/W Portable equipment market 1 Handy phone Digital still camera PDA Video movie Silicon audio Game High-Voltage System Series Monitor market Car audio Car navigation Telephone exchange equipment market GSM CDMA PDC LCD TV PDP CTV DVD-player Rear projection TV PHS Digital cordless Charger market (Japanese domestic and worldwide markets) 0.1 10 100 1000 VDS(V) Small-Signal Series Medium Voltage System Series SANYO has developed in the PicoMOSTM* Series of low-power high-performance switching devices. Full support for small-signal interface in portable equipment to handle functions implemented in digital. Increased resistance to ESD by incorporation of gate protection diodes and gate protection resistors. Extensive lineup, including a standard series using earlier packages and products using the new MCPH high-power package. *Precise interface control MOS (PicoMOS) Low-Voltage System Series (12 to 200V) (200 to 450V) These are high-performance power devices that were developed for high breakdown voltage, high speed, and high current by the application of SANYO's unique fine feature size process technology. These devices exhibit more than adequate performance for all type of power electronics application equipment, and the extent of the product line assures that a device optimal for the application can be selected. Motor controller MOSFET series · Faster built-in diodes · High withstand voltages (high dV/dt) High-Voltage System Series (450 to 1500V) These are miniature, high-efficiency, ultralow on resistance devices for portable equipment. A trench gate structure is used in these devices. SANYO has deployed these devices in a wide products that target lithiumion batteries and DC-DC converters. Devices that achieve ultralow on resistances by fabrication in an extremely fine feature size (submicron) process. Ultrahigh speed and high efficiency achieved by low capacitance and reduced gate resistance. 2 · On resistance reduced by about 20% from that of earlier products. · Both P-channel and N-channel series with built-in FRDs*2 are available. · A guaranteed avalanche resistance series is also available. *1: LGCP: Low gate charge process technology *2: FRD: Fast recovery diode D This series is optimal not only for battery chargers for all types of portable equipment, but for all types of AC adaptors and switching power supplies. This series adopts SANYO's unique LGCP*1 technology to achieve ultrahigh-speed switching operation. G S FRD 3 Trench Structure MOSFET Series Trench Structure MOSFET Series Package Development Trend and Road Map Package Development Trend and Road Map Trench Series Package development trend ECoP , Cell density > Higher integration by super fine technology ESD improvement by built-in diode between gate and source l l High Efficiency Series