NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
CPH6614 ENN8068 D1004PE TB-00000656 --30V --10V --15V IT07277 IT07278 IT07279 - Datasheet Archive
Ordering number : ENN8068 N-Channel and P-Channel Silicon MOSFETs CPH6614 General-Purpose Switching Device Applications Features
CPH6614 CPH6614 Ordering number : ENN8068 ENN8068 N-Channel and P-Channel Silicon MOSFETs CPH6614 CPH6614 General-Purpose Switching Device Applications Features · · · · The CPH6614 CPH6614 incorporates a N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance, Ultrahigh-speed switching, thereby enabling high-density mounting. Excellent ON-resistance characteristic. Best suited for load switches. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions N-channel P-channel Unit Drain-to-Source Voltage VDSS 30 -30 V Gate-to-Source Voltage VGSS ±20 ±20 V Drain Current (DC) Allowable Power Dissipation ID IDP PD 0.8 W Channel Temperature Tch 150 °C Storage Temperature Tstg -55 to +150 °C Drain Current (Pulse) 1.8 Mounted on a ceramic board (900mm2!0.8mm)1unit -1.2 A 7.2 PW10µs, duty cycle1% -4.8 A Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings min typ Unit max [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage V(BR)DSS IDSS IGSS VGS(off) yfs Forward Transfer Admittance ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=±16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=1A 30 V 1 ±10 0.78 µA 2.6 1.2 µA V 1.3 S RDS(on)1 RDS(on)2 ID=1A, VGS=10V ID=0.5A, VGS=4V 150 195 m 290 410 m Input Capacitance Ciss VDS=10V, f=1MHz 95 pF Output Capacitance Coss VDS=10V, f=1MHz 22 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 16 pF Static Drain-to-Source On-State Resistance Marking : WA Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D1004PE D1004PE TS TB-00000656 TB-00000656 No.8068-1/6 CPH6614 CPH6614 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Turn-ON Delay Time td(on) See specified Test Circuit. 6.2 ns Rise Time tr td(off) See specified Test Circuit. 4.5 ns See specified Test Circuit. 13 ns tf See specified Test Circuit. 6.4 ns Turn-OFF Delay Time Fall Time Total Gate Charge Qg VDS=10V, VGS=10V, ID=1.8A 3.2 nC Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=1.8A 0.74 nC Gate-to-Drain "Miller" Charge Qgd VDS=10V, VGS=10V, ID=1.8A 0.42 Diode Forward Voltage VSD IS=1.8A, VGS=0 0.93 nC 1.2 V -1 µA ±10 µA [P-channel] Drain-to-Source Breakdown Voltage V(BR)DSS ID=-1mA, VGS=0 VDS=-30V, VGS=0 -30 Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS VGS(off) VGS=±16V, VDS=0 VDS=-10V, ID=-1mA -1.2 yfs RDS(on)1 VDS=-10V, ID=-0.6A V 0.6 Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance RDS(on)2 Ciss -2.6 1.0 ID=-0.6A, VGS=-10V ID=-0.3A, VGS=-4V V S 320 420 m 590 830 m pF Coss VDS=-10V, f=1MHz VDS=-10V, f=1MHz 104 Output Capacitance 22 pF Reverse Transfer Capacitance Crss VDS=-10V, f=1MHz 17 pF Turn-ON Delay Time td(on) See specified Test Circuit. 12.5 ns Rise Time tr td(off) See specified Test Circuit. 24 ns See specified Test Circuit. 12 ns tf See specified Test Circuit. 12.2 ns Turn-OFF Delay Time Fall Time Total Gate Charge Qg VDS=-10V, VGS=-10V, ID=-1.2A 3.3 nC Gate-to-Source Charge Qgs nC Qgd VDS=-10V, VGS=-10V, ID=-1.2A VDS=-10V, VGS=-10V, ID=-1.2A 0.48 Gate-to-Drain "Miller" Charge Diode Forward Voltage VSD IS=-1.2A, VGS=0 Package Dimensions unit : mm 2238 0.45 -0.91 4 2 3 0.2 0.15 5 1 5 4 0.6 6 3 0.95 0.7 0.9 2 0.2 2.8 0.6 1.6 0.05 1 0.4 V Electrical Connection 6 2.9 nC -1.5 1 : Gate1 2 : Source2 3 : Gate2 4 : Drain2 5 : Source1 6 : Drain1 Top view 1 : Gate1 2 : Source2 3 : Gate2 4 : Drain2 5 : Source1 6 : Drain1 SANYO : CPH6 No.8068-2/6 CPH6614 CPH6614 Switching Time Test Circuit [N-channel] [P-channel] VIN VIN VDD=15V 10V 0V VDD= -15V 0V -10V ID=1A RL=15 VIN D D VOUT PW=10µs D.C.1% G Drain Current, ID - A 1.2 1.0 0.8 3.0V 0.6 .0V [Pch] -4 .0V -1 0 V 4.0 V V 6.0 10.0 ID - VDS -1.2 -1.0 V 3.5 1.4 Drain Current, ID - A [Nch] S .0V ID - VDS 1.6 50 P.G S -6 50 1.8 VOUT PW=10µs D.C.1% G P.G ID= -0.6A RL=25 VIN -0.8 -3.0V -0.6 -0.4 VGS= -2.5V 0.4 -0.2 VGS=2.5V 0.2 0 0 0.4 0.5 0.6 0.7 0.8 0.9 Drain-to-Source Voltage, VDS - V ID - VGS -0.1 IT07277 IT07277 -0.2 -0.3 [Nch] 1.0 75 ° 5°C Ta= 2 0.2 C -25° C 0.8 -0.8 -0.9 -1.0 ID - VGS [Pch] Ta= -25 °C 75 ° C -1.4 -1.2 -1.0 -0.8 -0.6 °C 1.2 0.4 -0.7 -1.6 1.4 0.6 -0.6 VDS= -10V -1.8 Drain Current, ID - A 1.6 C Ta= -25 °C 75° C 1.8 -0.5 IT07278 IT07278 -2.0 VDS=10V -0.4 Drain-to-Source Voltage, VDS - V 25° 2.0 Drain Current, ID - A 0 1.0 25° C 0.3 -0.4 -0.2 75° C -25 °C 0.2 25 0.1 Ta = 0 0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Gate-to-Source Voltage, VGS - V 4.0 4.5 IT07279 IT07279 0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 Gate-to-Source Voltage, VGS - V -4.0 -4.5 IT07280 IT07280 No.8068-3/6 CPH6614 CPH6614 RDS(on) - VGS 1200 500 400 1.0A ID=0.5A 200 100 0 2 4 6 8 10 12 14 16 18 Gate-to-Source Voltage, VGS - V 800 -600mA 600 ID= -300mA 400 200 4V S= , VG 0.5A I D= 250 =10V , VGS 200 .0A I D=1 150 100 50 -40 -20 0 20 40 60 80 100 120 140 Ambient Temperature, Ta - °C 3 2 °C 25 1.0 7 C 5° -2 =- 5 Ta 5°C 7 3 2 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Drain Current, ID - A 2 3 800 -14 -16 -18 -20 IT07282 IT07282 [Pch] = -4V VGS mA, 300 I D= - 400 = -10V mA, V GS I D= -600 200 -40 -20 0 20 40 60 80 100 120 140 160 IT07284 IT07284 yfs - ID 5 [Pch] VDS= -10V 3 2 °C 25 5°C 1.0 7 = Ta 5 -2 C 75° 3 2 0.1 -0.01 5 2 3 5 7 -0.1 2 3 5 7 -1.0 Drain Current, ID - A [Nch] 2 3 IT07286 IT07286 IF - VSD 3 VGS=0 3 -12 600 IT07285 IT07285 IF - VSD 5 -10 Ambient Temperature, Ta - °C [Nch] VDS=10V -8 RDS(on) - Ta IT07283 IT07283 yfs - ID 5 -6 1000 0 -60 160 Forward Transfer Admittance, yfs - S 0 -60 -4 1200 Static Drain-to-Source On-State Resistance, RDS(on) - m 400 300 -2 Gate-to-Source Voltage, VGS - V [Nch] 450 350 0 20 IT07281 IT07281 RDS(on) - Ta 500 Static Drain-to-Source On-State Resistance, RDS(on) - m 1000 0 0 Forward Transfer Admittance, yfs - S [Pch] Ta=25°C 600 300 RDS(on) - VGS [Nch] Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) - m Static Drain-to-Source On-State Resistance, RDS(on) - m 700 [Pch] VGS=0 2 2 3 5°C 25° C -25° C 0.1 7 5 7 5 2 Ta= 7 Forward Current, IF - A C -25 °C 5°C 2 25° 3 Ta= 7 Forward Current, IF - A -1.0 1.0 7 5 -0.1 7 5 3 3 2 2 0.01 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Diode Forward Voltage, VSD - V 1.1 1.2 IT07287 IT07287 -0.01 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 -1.1 Diode Forward Voltage, VSD - V -1.2 IT07288 IT07288 No.8068-4/6 CPH6614 CPH6614 SW Time - ID 3 Switching Time, SW Time - ns 7 5 3 td(off) tf td(on) 7 5 tr 3 VDD= -15V VGS= -10V 2 100 10 [Pch] 100 7 5 3 tf Switching Time, SW Time - ns 3 VDD=15V VGS=10V 2 2 SW Time - ID [Nch] 2 td(off) td(on) 10 tr 7 5 2 3 1.0 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Drain Current, ID - A 2 -0.01 7 3 5 7 -0.1 3 Ciss, Coss, Crss - pF Ciss 5 3 3 [Pch] 7 5 3 Coss 2 Crss 10 10 5 0 10 15 20 25 Drain-to-Source Voltage, VDS - V Gate-to-Source Voltage, VGS - V 7 6 5 4 3 2 -15 -20 -25 -30 1 IT07292 IT07292 VGS - Qg -10 [Pch] VDS= -10V ID= -1.2A -9 8 -10 Drain-to-Source Voltage, VDS - V [Nch] VDS=10V ID=1.8A 9 -5 0 30 IT07291 IT07291 VGS - Qg 10 Gate-to-Source Voltage, VGS - V 2 IT07290 IT07290 Ciss Crss -8 -7 -6 -5 -4 -3 -2 -1 0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 [Nch] 3 2 IT07295 IT07295 ) °C 5 Operation in this area is limited by RDS(on). 25 2 3 a= (T -0.1 7 5 3 2 s Drain-to-Source Voltage, VDS - V 3 2 n 5 7 10 m 2 3 ID= -1.2A -1.0 7 5 tio 5 7 1.0 10 0 1m µs s IDP= -4.8A s 2 3 [Pch]