ENN7017 CPH6313 CPH6315 TA-3308 --10V IT03130 IT03131 IT03132 IT03133 IT03134

CPH6313 P-Channel Silicon MOSFET CPH6313 High-Speed Switching Applications Features · · Package Dimensions Low

Ordering number : ENN7017 ENN7017 CPH6313 CPH6313 P-Channel Silicon MOSFET CPH6313 CPH6313 High-Speed Switching Applications Features · · Package Dimensions Low ON-resistance. High-speed switching. 2.5V drive. unit : mm 2151A [CPH6315 CPH6315] 0.15 2.9 5 4 0.6 6 0.2 · 2.8 0.6 1.6 0.05 3 0.95 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain 0.2 2 0.7 0.9 1 0.4 Specifications SANYO : CPH6 Absolute Maximum Ratings a t Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS -20 Gate-to-Source Voltage VGSS ±10 V -4 A Drain Current (DC) ID Drain Current (Pulse) IDP PD Allowable Power Dissipation V PW10µs, duty cycle1% -16 A Mounted on a ceramic board (1200mm2!0.8mm) 1.6 W Channel Temperature Tch 150 °C Storage Temperature Tstg -55 to +150 °C Electrical Characteristics a t Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Ratings min typ Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance ID=-1mA, VGS=0 VDS=-20V, VGS=0 VGS=±8V, VDS=0 VDS=-10V, ID=-1mA VDS=-10V, ID=-2A -0.4 RDS(on)1 RDS(on)2 ID=-2A, VGS=-4.5V ID=-1A, VGS=-2.5V Unit max -20 VGS(off) yfs Zero-Gate Voltage Drain Current V(BR)DSS Conditions IDSS IGSS V -1 ±10 µA -1.4 4 µA V 5.8 S 55 m 80 Marking : JP 72 110 m Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 73001 TS TA-3308 TA-3308 No.7017-1/4 CPH6313 CPH6313 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Input Capacitance Ciss Coss VDS=-10V, f=1MHz VDS=-10V, f=1MHz 680 Output Capacitance 115 pF Reverse Transfer Capacitance Crss VDS=-10V, f=1MHz 80 pF Turn-ON Delay Time td(on) See specified Test Circuit. 12 ns Rise Time tr td(off) See specified Test Circuit. 57 ns See specified Test Circuit. 68 ns tf See specified Test Circuit. 58 ns Qg VDS=-10V, VGS=-4.5V, ID=-4A 8.7 nC Gate-to-Source Charge Qgs nC Qgd VDS=-10V, VGS=-4.5V, ID=-4A VDS=-10V, VGS=-4.5V, ID=-4A 1.5 Gate-to-Drain "Miller" Charge Diode Forward Voltage VSD IS=-4A, VGS=0 Turn-OFF Delay Time Fall Time Total Gate Charge pF 1.8 nC -0.85 -1.2 V Switching Time Test Circuit VDD= -10V VIN 0V -4.5V ID= -2A RL=5 VIN D VOUT PW=10µs D.C.1% G CPH6313 CPH6313 50 ID - VDS -1.0 -3 -2 -1 -0.5 25°C -1.5 -4 °C -2.0 -5 5°C 5V -1. -2.5 -25 Drain Current, ID - A -3.0 VDS= -10V -6 -3.0 -3.5 ID - VGS -7 V -2.5V -2 .0V -4.5V -3 .5V -4.0 Drain Current, ID - A S Ta= 7 P.G VGS= -1.0V 0 0 0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 Drain-to-Source Voltage, VDS - V IT03130 IT03130 0 RDS(on) - VGS 160 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0 Gate-to-Source Voltage, VGS - V IT03131 IT03131 RDS(on) - Ta 140 Static Drain-to-Source On-State Resistance, RDS(on) - m Static Drain-to-Source On-State Resistance, RDS(on) - m Ta=25°C 140 120 100 80 ID= -1.0A -2.0A 60 40 20 0 0 -1 -2 -3 -4 -5 -6 -7 -8 Gate-to-Source Voltage, VGS - V -9 -10 IT03132 IT03132 120 V -2.5 S= A, VG 100 I D= 80 -1 I D= 60 5V = -4. VGS -2A, 40 20 0 -60 -40 -20 0 20 40 60 80 100 Ambient Temperature, Ta - °C 120 140 160 IT03133 IT03133 No.7017-2/4 2 3 5 7 -0.1 2 3 5 7 -1.0 Drain Current, ID - A 2 3 5 7 -10 Ta= 7 7 5 3 2 -0.001 -0.2 -0.3 IT03134 IT03134 SW Time - ID -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 Diode Forward Voltage, VSD - V IT03135 IT03135 Ciss, Coss, Crss - VDS 2 f=1MHz VDD= -10V VGS= -4.5V 2 1000 100 7 td(off) 5 tf tr 3 2 td(on) Ciss 7 5 3 2 Coss 100 Crss 7 10 5 7 5 3 2 -0.1 3 5 7 2 -1.0 Drain Current, ID - A 3 5 7 0 -10 3 2 VDS= -10V ID= -4A -4.0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 Drain-to-Source Voltage, VDS - V IT03137 IT03137 IT03136 IT03136 VGS - Qg -4.5 ASO IDP= -16A