EMP107-P1 - Datasheet Archive

 

5.8 ­ 8.0 GHz Power Amplifier MMIC ISSUED DATE: 07-01-04 FEATURES · · · · 5.8 ­ 8.0 GHz

 

EMP107-P1 EMP107-P1 5.8 ­ 8.0 GHz Power Amplifier MMIC ISSUED DATE: 07-01-04 FEATURES · · · · 5.8 ­ 8.0 GHz Operating Frequency Range 24.0dBm Output Power at 1dB Compression 20.0 dB Typical Small Signal Gain -40dBc OIMD3 @Each Tone Pout 14dBm APPLICATIONS · · Point-to-point and point-to-multipoint radio Military Radar Systems Optional Packaging solutions are available contact the Excelics sales team for details. Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25 °C, 50 ohm, VDD= 7 V, IDQ= 200 mA) SYMBOL F P1dB Gss OIMD3 Input RL Output RL PARAMETER/TEST CONDITIONS MIN TYP MAX UNITS 8.0 GHz Operating Frequency Range 5.8 Output Power at 1dB Gain Compression 22.5 24.0 dBm Small Signal Gain Output 3rd Order Intermodulation Distortion @f=10MHz, Each Tone Pout 14dBm 17.0 20.0 dB -40 dBc Input Return Loss -12 dB Output Return Loss -6 dB Idss Saturate Drain Current VDD VDS =3V, VGS =0V Power Supply Voltage Thermal Resistance (Au-Sn Eutectic Attach) Tb Operating Base Plate Temperature 305 366 7 Rth 244 8 V o 30 - 35 mA C/W + 85 ºC 1,2 ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION SYMBOL CHARACTERISTIC VALUE VDS Drain to Source Voltage 8V VGS Gate to Source Voltage -4V IDD Drain Current Idss IGSF Forward Gate Current PIN Input Power TCH Channel Temperature 150°C TSTG Storage Temperature -65/150°C PT 4.5 mA @ 3dB compression Total Power Dissipation 3.8W 1. Operating the device beyond any of the above rating may result in permanent damage. 2. Bias conditions must also satisfy the following equation VDS*IDS < (TCH ­THS)/RTH; where THS = ambient temperature Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 1 Revised July 2004