EM3027 UL1642 TSSOP14 TSSOP-08/14 MIL-STD-883C 95VCC 05VCC S12/24 UM10204

EM MICROELECTRONIC - MARIN SA EM3027 Real Time Clock with I2C or SPI, Crystal Temperature Compensation, Battery Switchover and

R EM MICROELECTRONIC - MARIN SA EM3027 EM3027 Real Time Clock with I2C or SPI, Crystal Temperature Compensation, Battery Switchover and Trickle Charger Description The EM3027 EM3027 is an Ultra Low Power CMOS real-time clock IC with two serial interface modes: I2C or SPI. The interface mode is selected by the chip version (see §12). The basic clock is obtained from the 32.768 kHz crystal oscillator. A thermal compensation of the frequency is based on the temperature measurement and calculation of the correction value. The temperature can be measured internally or be input by an external application to the register. The chip provides clock and calendar information in BCD format with alarm possibility. The actual contents are latched at the beginning of a read transmission and afterwards data are read without clock counter data corruption. An integrated 16-bit timer can run in Zero-Stop or AutoReload mode. An interrupt request signal can be provided through INT/IRQ pin generated from alarm, timer, voltage detector and Self-Recovery system. An integrated trickle charger allows recharging backup supply VBack from the main supply voltage VCC through internal resistor(s). The internal device supply will switchover to VCC when VCC is higher than VBack and vice versa. The device operates over a wide 1.4 to 5.5V supply range and requires only 900 nA at 5V. It can detect internally two supply voltage levels. Applications Utility meters Battery operated and portable equipment Consumer electronics White/brown goods Pay phones Cash registers Personal computers Programmable controller systems Data loggers Features Fully operational from 2.1 to 5.5V Supply current typically 600 nA at 1.4V Thermal compensated crystal frequency Oscillator stability 0.5 ppm / Volt Counter for seconds, minutes, hours, day of week, date months, years in BCD format and alarm Leap year compensation 16-bits timer with 2 working modes Two low voltage detection levels VLow1, VLow2 Automatic supply switchover 2 Serial communication via I2C (I C-bus specification Rev. 03 compatible see §10.2) or SPI (3-line SPIbus with separate combinable data input and output) Thermometer readable by the host Trickle charger to maintain battery charge Integrated oscillator capacitors Two EEPROM and 8 RAM data bytes for application Digital Self-Recovery system No busy states and no risk of corrupted data while accessing One hour periodical configuration registers refresh Support for standard UL1642 UL1642 for Lithium batteries Standard temperature range: -40°C to +85°C Extended temperature range: -40°C to +125°C Packages: TSSOP8, TSSOP14 TSSOP14, SO8. Block Diagram EM3027 EM3027 Temperature Sensor X1 Oscillator X2 VCC VREG VBack SCL/SCK SDA/SO SI Power Management I2C or SPI CS CLKOUT INT or IRQ CLKOE Watch & Alarm - Seconds - Minutes - Hours - Days - Weekdays - Months - Years Timer Output Control EEPROM Copyright © 2009, EM Microelectronic-Marin SA 12/09 rev D 1 www.emmicroelectronic.com R EM3027 EM3027 Table of contents Table of contents. 2 1 Packages / Pin Out Configuration . 3 2 Absolute Maximum Ratings. 4 2.1 Handling Procedures. 4 2.2 Operating Conditions . 4 2.3 Crystal characteristics . 4 2.4 EEPROM Characteristics . 4 3 Electrical Characteristics . 4 4 EM3027 EM3027 Block Diagram and Application Schematic. 6 4.1 Block Diagram. 6 4.2 Application Schematic . 6 4.3 Crystal Thermal Behaviour. 7 4.4 Crystal Calibration. 8 5 Memory Mapping. 9 6 Definitions of terms in the memory mapping . 10 7 Serial communication . 12 7.1 How to perform data transmission through I2C . 12 7.2 How to perform data transmission through SPI. 13 8 Functional Description. 15 8.1 Start after power-up . 15 8.2 Normal Mode function . 15 8.3 Watch and Alarm function . 15 8.4 Timer function . 16 8.5 Temperature measurement. 16 8.6 Frequency compensation . 16 8.7 EEPROM memory. 17 8.8 RAM User Memory. 18 8.9 Status Register. 18 8.10 Interrupts . 18 8.11 Self-Recovery System (SRS) . 19 8.12 Register Map . 19 8.13 Crystal Oscillator and Prescaler . 19 9 Power Management . 20 9.1 Power Supplies, Switchover and Trickle Charger . 20 9.2 Low Supply Detection . 21 10 AC Characteristics . 22 10.1 AC characteristics I2C . 22 10.2 I2C Specification compliance . 23 10.3 AC characteristics SPI. 24 11 Package Information . 26 11.1 TSSOP-08/14 TSSOP-08/14 . 26 11.2 SO-8. 27 12 Ordering Information . 28 Copyright © 2009, EM Microelectronic-Marin SA 12/09 rev D 2 www.emmicroelectronic.com R EM3027 EM3027 1 Packages / Pin Out Configuration SO8-TSSOP8 Vcc X1 X2 VBack IRQ/CLKOUT EM3027 EM3027 SCL Vss SDA I2C TSSOP14 TSSOP14 X1 NC X2 CLKOE SI VCC VReg EM3027 EM3027 VBack IRQ/CLKOUT CS INT SCK Vss SO SPI Pin 1 2 3 4 5 6 7 8 Table 1 Name X1 X2 VBack VSS SDA SCL IRQ/CLKOUT VCC Pin 1 2 3 Name X1 X2 SI 4 VReg 5 VBack INT 6 7 8 9 10 11 12 VSS SO SCK CS IRQ/CLKOUT VCC 13 CLKOE 14 NC Table 2 Copyright © 2009, EM Microelectronic-Marin SA 12/09 rev D 3 Function 32.768 kHz crystal input 32.768 kHz crystal output Backup Supply Ground Supply Serial Data Serial Clock Interrupt Request/Clock output Positive Supply Function 32.768 kHz crystal input 32.768 kHz crystal output Serial Data input Regulated Voltage Reserved for test purpose (This output must be left unconnected) Backup Supply Interrupt Request output (Open Drain active low) Ground Supply Serial Data output Serial Clock input Chip Select input Interrupt Request/Clock output Positive Supply Clock Output Enable CLKOE = `0' CLKOUT is low CLKOE = `1' CLKOUT is output Not Connected www.emmicroelectronic.com R EM3027 EM3027 2 Operating Conditions Absolute Maximum Ratings Parameter Maximum voltage at VCC Minimum voltage at VCC Maximum voltage at any signal pin Minimum voltage at any signal pin Maximum storage temperature Minimum storage temperature Electrostatic discharge maximum to MIL-STD-883C MIL-STD-883C method 3015.7 with ref. to VSS Table 3 Symbol VCCmax VCCmin Conditions VSS + 6.0V VSS 0.3V Vmax VCC + 0.3V Vmin VSS 0.3V TSTOmax +150°C TSTOmin -65°C VSmax Parameter 2000V Symbol 2.3 Symbol Frequency Load capacitance Series resistance Table 5 Max Unit +125 °C 5.5 V nF Min f CL RS 7 Typ Max Unit 32.768 kHz 8.2 12.5 pF 70 110 k Crystal Reference : Micro Crystal CC5V-T1A web: www.microcrystal.com 2.4 EEPROM Characteristics Parameter Handling Procedures Symbol Read voltage Programming Voltage This device has built-in protection against high static voltages or electric fields; however, anti-static precautions must be taken as for any other CMOS component. Unless otherwise specified, proper operation can only occur when all terminal voltages are kept within the voltage range. Unused inputs must always be tied to a defined logic voltage level. Min Typ Max Unit VRead 1.4 V VProg EEPROM Programming Time Write/Erase Cycling Table 6 2.2 3 Typ Crystal characteristics Parameter Stresses above these listed maximum ratings may cause permanent damages to the device. Exposure beyond specified operating conditions may affect device reliability or cause malfunction. 2.1 Min TA Operating Temp. -40 Supply voltage VCC, 1.4 5.0 VBack (Note 1) Capacitor at VCC, CD 100 VBack Table 4 Note 1: Refer to paragraphs 9.1 and 9.2 2.2 V 30 TProg 5000 ms cycles Electrical Characteristics Parameter Total supply current with Crystal Total supply current with Crystal Symbol ICC IBack Test Conditions All outputs open, Rs < 70 k, VBack = 0V I2C: SDA, SCL at VCC, Clk/Int='0' SPI: All inputs at VSS VCC 1.4 3.3 5.0 All outputs open, Rs < 70 k, VCC = 0V I2C: SDA, SCL at VBack, Clk/Int='0' SPI: All inputs at VSS VBack 1.4 3.3 0 5.0 Dynamic current I2C IDD SCL = 100kHz (See Note 1) SCL = 400kHz (See Note 1) SCL = 400kHz (See note 1) Copyright © 2009, EM Microelectronic-Marin SA 12/09 rev D 1.4 3.3 5.0 4 Temp. °C -40 to 85 -40 to 125 -40 to 85 -40 to 125 -40 to 85 -40 to 125 -40 to 85 -40 to 125 -40 to 85 -40 to 125 -40 to 85 -40 to 125 -40 to 85 -40 to 125 -40 to 85 -40 to 125 -40 to 85 -40 to 125 Min Typ 0.6 0.8 0.9 0.6 0.8 0.9 Max 1.5 4.6 2.0 5.2 2.2 5.5 1.5 4.6 2.0 5.2 2.2 5.5 12 15 35 40 50 60 www.emmicroelectronic.com Unit µA µA µA R EM3027 EM3027 Parameter Dynamic current SPI Interface Low supply detection level1 Low supply detection level2 Switchover hysteresis Symbol IDD Vlow1 Vlow2 Test Conditions SCK = 200 kHz (See Note 2) SCK = 1 MHz (See Note 2) SCK = 1 MHz (See Note 2) Relative to VCC VCC -40 to 125 3.3 5.0 Relative to VCC Min -40 to 125 1.4 Temp. °C -40 to 85 -40 to 125 -40 to 85 -40 to 125 -40 to 85 -40 to 125 Max 14 18 50 55 65 75 Unit 1.8 2.1 V 1.0 1.4 V Vhyst VCC with respect to VBack = 3.0V 1.4 to 5.0 Input Parameters Low level input voltage High level input voltage VIL VIH CS, CLKOE, SI, SCL/SCK, SDA 1.4 to 5.0 Input Leakage IIN 0.0 < VIN < VCC 1.4 to 5.0 -40 to 85 -40 to 125 1.4 -40 to 125 3.3 -40 to 125 5.0 -40 to 125 1.4 to 5.0 -40 to 85 -40 to 125 -1 -1.5 -40 to 125 -40 to 85 -40 to 125 Typ 1.2 Output Parameters Low level output voltage High level output voltage Low level output voltage High level output voltage Low level output voltage High level output voltage Output HiZ leakage on INT Oscillator Start-up voltage Start-up time VOL IOL = 0.4 mA VOH IOH = 0.1 mA VOL IOL = 1.5 mA VOH IOH = 1.5 mA VOL IOL = 5.0 mA VOH IOH = 2.0 mA ILEAK_OUT INT not active VSTA TSTA Frequency stability over voltage f/(f V) Input capacitance on X1 CIN Output capacitance on X2 Trickle Charger Current limiting Resistors COUT R80k R20k R5k R1.5k -40 to 125 20 mV 0.2VCC 0.8VCC -1 -1.5 µA 1 1.5 V µA 0.2 V 1.0 0.25 V 2.7 0.8 TSTA < 10s V 4.5 1 1.5 µA 0.5 2 ppm/ V 13.5 25 13.5 25 25 25 25 80 20 5.0 1.5 -40 to 85 -40 to 125 TA = +25°C, f = 32.768kHz, Vmeas = 0.3V (Note 3) TA = +25°C, f = 32.768kHz, Vmeas = 0.3V (Note 3) V s s 25 1.8V VCC 5.5V, TA = +25°C 3 3 25 5.0 0.5 1 +/- 1 +/- 1 pF VCC =5.0V, VBack=3.0V VCC =5.0V, VBack=3.0V VCC =5.0V, VBack=3.0V VCC =5.0V, VBack=3.0V k Thermometer Precision TE Vlow1 < VCC 5.5V +/- 3 +/- 6 Table 7 The following parameters are tested during production test: IDD, Vlow1, Vlow2, VIL, VIH, VOL, VOH, IIN, ILEAK_OUT The parameters ICC, Vhyst, VSTA, TSTA, CIN, COUT, f/(f*V), TE are characterised during the qualification of the IC. Notes: 1. SDA = VSS, continuous clock applied at SCL (VIL_SCL < 0.05V, VIH_SCL > 0.95VCC 95VCC) 2. CS, SI = VCC, continuous clock applied at SCK, SO not connected. (VIL_SCK < 0.05VCC 05VCC, VIH_SCK > 0.95VCC 95VCC) Note that there is a 100k pull-down resistor on CS. 3. Vmeas : Peak to peak amplitude during capacitance measurement Copyright © 2009, EM Microelectronic-Marin SA 12/09 rev D 5 www.emmicroelectronic.com °C R EM3027 EM3027 4 EM3027 EM3027 Block Diagram and Application Schematic 4.1 Block Diagram Switchover VBack VHigh Voltage Regulator Voltage Monitoring Vcc Vss VREG X1 Xtal Oscillator Prescaler RTC X2 RAM 32.768 kHz EEPROM Control SCL/SCK SI I2C SPI Inputs Stages CS SDA/SO Thermometer Output Buffers CLKOE SDA/SO INT 4.2 CLKOUT Application Schematic Crystal Layout Example VCC Supply CD X1 VCC for application use X1 CLKOUT Crystal X2 VCC EM3027 EM3027 CLKOE INT VBack Protection Resistor * X2 CS, SCL/SCK SDA/SO SI CD Lithium Battery or Super Cap VSS µController Serial Interface VSS VSS = 0V * optional for Lithium batteries (1.8V 300 0.4 Vcc >1.8V 0.5 Vcc>1.4V Hold Time (Repeated) START Condition Vcc 3.0V tBUF kHz 100 Vcc>1.4V Bus Free Time Between STOP and START Condition UNITS 1.0 s Vcc 3.0V tHD:STA 0.2 Vcc >1.8V s Vcc>1.4V Vcc 3.0V LOW Period of SCL Clock tLOW 1.3 Vcc >1.8V 1.7 Vcc>1.4V Vcc 3.0V tHIGH 0.4 Vcc >1.8V 0.5 Vcc>1.4V HIGH Period of SCL Clock 0.6 Vcc 3.0V tSU:STA 30 50 Vcc 3.0V Data Setup Time tSU:DAT 20 50 50 Vcc >1.8V Vcc >1.8V 1.5 4.0 Vcc 3.0V 0.9 Vcc >1.8V 1.1 Vcc>1.4V tVD:ACK 1.2 Vcc>1.4V Data Valid Acknowledge Time ns 80 Vcc>1.4V tVD:DAT ns 100 Vcc 3.0V Data Valid Time ns 30 Vcc>1.4V tHD:DAT Vcc >1.8V Vcc 3.0V Data Hold Time s 20 Vcc >1.8V Vcc>1.4V Setup Time START Condition s 4.5 3.5 s s Fall Time of Both SDA and SCL Signals (See note 1) Vcc 3.0V tR 200 Vcc >1.8V 300 Vcc>1.4V Rise Time of Both SDA and SCL Signals 1000 Vcc 3.0V tF 200 Vcc >1.8V 300 Vcc 3.0V 20 Vcc >1.8V 30 Vcc>1.4V tSU:STO ns 400 Vcc>1.4V Setup Time (Repeated) STOP Condition ns 50 ns Length of spikes suppressed by the input filter on SCL and SDA Capacitive Load For Each Bus Line tSP 50 CB 200 pF I/O Capacitance (SDA, SCL) CI/O 10 pF ns Table 13: I2C AC characteristics Parameters are guaranteed by design. They are not tested in production. Copyright © 2009, EM Microelectronic-Marin SA 12/09 rev D 22 www.emmicroelectronic.com R EM3027 EM3027 Calculation of external pullup resistor The following conditions have to be met: Rise time is equal to 0.847 RPU (CB + N * CI/O) RPU < tR max / (0.847 (CB + N CI/O), where N is total number of I/O pins connected to the corresponding bus line. (tR in ns, C in pF, R in k) The minimum value of the pullup resistor value can be calculated with the IOL value of the SDA output: RPU = (Vcc VOL) / IOL ( IOL: see Table 7, page 5, Output Parameters; e.g. 5mA at VCC = 5.0V, with VOL = 0.8V ) Start Stop SDA tBUF tHIGH tLOW tR SCL tHD:STA tHD:DAT tF tSU:STO tSU:DAT tSU:STA Figure 8: I2C Timing 10.2 I2C Specification compliance EM3027 EM3027 device with I2C serial interface was designed 2 in compliance with Philips Semiconductors I C-bus specification UM10204 UM10204 (Rev. 03 19 June 2007), Fastmode class (up to 400kbit/s). Device address consists of 7 bits. Clock stretching is not supported. Brief manual to I2C interface read and write transmissions is to be found in §7.1. Copyright © 2009, EM Microelectronic-Marin SA 12/09 rev D There are, however, the following discrepancies between I2C specification and EM3027 EM3027 interface: 1) Falling time on SDA driven by EM3027 EM3027 can be shorter than 20 + 0.1* CB ns. (CB is total capacitive load for SDA bus line in pF) In other words, slope control of falling edges on SDA is missing. 2) Some timing parameters differ from the original I2C specification refer to Table 13. 23 www.emmicroelectronic.com R EM3027 EM3027 10.3 AC characteristics SPI VSS = 0V and TA=-40 to +125°C, unless otherwise specified PARAMETER SYMBOL CONDITIONS fSCK tDC UNITS Vcc 3.0V 1 MHz 600 Vcc >1.4V Data to SCK setup MAX Vcc >1.8V SCK Clock Frequency MIN TYP 200 kHz Vcc 3.0V Vcc >1.8V 20 ns Vcc >1.4V SCK to Data Hold tCDH 300 Vcc >1.4V tCDD 200 Vcc >1.8V SCK to Data Valid Vcc 3.0V 500 ns 650 Vcc >1.4V tCL 350 Vcc >1.8V SCK Low Time Vcc 3.0V 1300 700 Vcc >1.4V tCH 400 Vcc >1.8V SCK High Time Vcc 3.0V 1500 400 1500 Vcc 3.0V 800 Vcc >1.4V tCC ns 200 Vcc >1.8V CS to SCK Setup ns 700 Vcc >1.4V tR , tF Vcc 3.0V Vcc >1.8V SCK Rise and Fall ns ns Vcc 3.0V Vcc >1.8V 100 ns Vcc >1.4V SCK to CS Hold tCCH Vcc 3.0V 200 Vcc >1.8V CS Inactive Time tCWL 500 Vcc 3.0V 200 Vcc >1.8V tCDZ ns 300 Vcc >1.4V CS to Output High Impedance ns 300 Vcc >1.4V 400 Vcc 3.0V 50 Vcc >1.8V 100 Vcc >1.4V ns 200 Table 14: SPI AC characteristics Parameters are guaranteed by design. They are not tested in production. 1) Max. bus capacitance on SO line shall be lower than 100pF when Vcc > 1.8V and lower than 50pF when Vcc < 1.8V. 2) Spikes on SCK signal shorter than 20ns are suppressed. Copyright © 2009, EM Microelectronic-Marin SA 12/09 rev D 24 www.emmicroelectronic.com R EM3027 EM3027 CS tF tCC tCH t tCCH tCL tCWL SCK tDC tCDH A0 R/W SI SI data are don't care when SO outputs data tCDD SPI Master writes address, EM3027 EM3027 outputs data: HiZ SO tCDZ D0 D7 Figure 9: SPI Read Timing CS tF tCC tCH t tCCH tCL tCWL SCK tDC SI tCDH R/W A0 D7 D0 SPI Master writes address and data: SO HiZ Figure 10: SPI Write Timing Copyright © 2009, EM Microelectronic-Marin SA 12/09 rev D 25 www.emmicroelectronic.com R EM3027 EM3027 11 Package Information 11.1 TSSOP-08/14 TSSOP-08/14 4 B 1.00 1.00 DIA. 3 2 1 C B B E/2 1.00 E C L E1 5 N 0.20 C A-B D 2X N/2 TIPS e/2 7 4 SEE DETAIL "A" D A 4 b bbb M C A-B A2 ODD LEAD SIDES TOPVIEW TOPVIEW D 9 0.05 C 0.25 PARTING LINE A H C e A1 H D 5 C aaa 3 X = A AND B (14°) EVEN LEAD SIDES END VIEW TOP VIEW X X L 6 8 SEATING PLANE (1.00) DETAIL 'A' (14°) (VIEW ROTATED 90° C.W.) S Y M B O L A A1 A2 aaa b b1 bbb c c1 D E1 e E L N P P1 COMMON DIMENSIONS MIN. NOM. 0.05 0.85 0.90 0.076 0.19 0.19 0.22 0.10 0.09 0.09 0.127 SEE VARIATIONS 4.30 4.40 0.65 BSC 6.40 BSC 0.50 0.60 SEE VARIATIONS SEE VARIATIONS SEE VARIATIONS 0° NOTE MAX. 1.10 0.15 0.95 0.30 0.25 0.20 0.16 4.50 0.70 8° ALL DIMENSIONS IN MILLIMETERS Copyright © 2009, EM Microelectronic-Marin SA 12/09 rev D N VARIO T E ATIONS 9 MIN. 2.90 4.90 5 D NOM. 3.00 5.00 MAX. 3.10 5.10 P MAX. 1.59 3.1 P1 MAX. 3.2 3.0 7 N 8 14 NOTES: 1. DIE THICKNESS ALLOWABLE IS 0.279±0.0127 2. DIMENSIONING & TOLERANCES PER ASME. Y14.5M-1994 5M-1994. 3. DATUM PLANE H LOCATED AT MOLD PARTING LINE AND COINCIDENT WITH LEAD, WHERE LEAD EXITS PLASTIC BODY AT BOTTOM OF PARTING LINE. 4. DATUM A-B AND D TO BE DETERMINED WHERE CENTERLINE BETWEEN LEADS EXITS PLASTIC BODY AT DATUM PLANE H. 5 5 5. "D" & "E1" ARE REFERENCE DATUM AND DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS, AND ARE MEASURED AT THE BOTTOM PARTING LINE. MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.15mm ON D AND 0.25mm ON E PER SIDE. 6. DIMENSION IS THE LENGTH OF TERMINAL FOR SOLDERING TO A SUBSTRATE. 6 7 7. TERMINAL POSITIONS ARE SHOWN FOR REFERENCE ONLY. 8. FORMED LEADS SHALL BE PLANAR WITH RESPECT TO ONE ANOTHER WITHIN 0.076mm AT SEATING PLANE. 9. THE LEAD WIDTH DIMENSION DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.07mm TOTAL IN EXCESS OF THE LEAD WIDTH DIMENSION AT MAXIMUM MATERIAL CONDITION. DAMBAR CANNOT BE LOCATED ON THE LOWER RADIUS OR THE FOOT. MINIMUM SPACE BETWEEN PROTRUSIONS AND AN ADJACENT LEAD SHOULD BE 0.07mm 26 www.emmicroelectronic.com R EM3027 EM3027 11.2 SO-8 Copyright © 2009, EM Microelectronic-Marin SA 12/09 rev D 27 www.emmicroelectronic.com R EM3027 EM3027 12 Ordering Information EM3027 EM3027 I D X SO8B Part Number EM3027 EM3027 = Package RTC SO8B= TP8B= Interface 8 pin SO8 tape 8 pin TSSOP8 tape I2C bus = I TP14= 14 pin TSSOP14 TSSOP14 tape SPI bus = S WS11= Wafer sawn 11 MILS Temperature compensation Functional Temperature D Default Temp. Compensation = Standard temperature= S Extended temperature= X (Factory Standard) Standard Versions Part Number Package EM3027IDSTP8A EM3027IDSTP8A+ EM3027IDSTP8B EM3027IDSTP8B+ EM3027IDXTP8B EM3027IDXTP8B+ EM3027IDSSO08A EM3027IDSSO08A+ EM3027IDSSO08B EM3027IDSSO08B+ EM3027IDXSO08B EM3027IDXSO08B+ EM3027SDSTP14A EM3027SDSTP14A+ EM3027SDSTP14B EM3027SDSTP14B+ EM3027SDXTP14B EM3027SDXTP14B+ TSSOP8 TSSOP8 TSSOP8 SO8 SO8 SO8 TSSOP14 TSSOP14 TSSOP14 TSSOP14 TSSOP14 TSSOP14 Functional Temperature -40 +85°C -40 +85°C -40 +125°C -40 +85°C -40 +85°C -40 +125°C -40 +85°C -40 +85°C -40 +125°C Interface Delivery Form I2C I2C I2C I2C I2C I2C SPI SPI SPI Marking Stick , 100 pcs Tape & Reel, 4000 pcs Tape & Reel, 4000 pcs Stick, 97 pcs Tape & Reel, 2500 pcs Tape & Reel, 2500 pcs Stick, 96 pcs Tape & Reel, 3500 pcs Tape & Reel, 3500 pcs 3027S5 3027S5 3027S5 3027S5 3027X5 3027X5 3027S5 3027S5 3027S5 3027S5 3027X5 3027X5 3027S6 3027S6 3027S6 3027S6 3027X6 3027X6 Please contact Sales office for other versions not shown here and for availability of non standard versions. EM Microelectronic-Marin SA (EM) makes no warranty for the use of its products, other than those expressly contained in the Company's standard warranty which is detailed in EM's General Terms of Sale located on the Company's web site. EM assumes no responsibility for any errors which may appear in this document, reserves the right to change devices or specifications detailed herein at any time without notice, and does not make any commitment to update the information contained herein. No licenses to patents or other intellectual property of EM are granted in connection with the sale of EM products, expressly or by implications. EM's products are not authorized for use as components in life support devices or systems. Copyright © 2009, EM Microelectronic-Marin SA 12/09 rev D 28 www.emmicroelectronic.com