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EIC1011-8 - Datasheet Archive
10.70-11.70 GHz 8-Watt Internally-Matched Power FET FEATURES · · · · · · ·
EIC1011-8 EIC1011-8 10.70-11.70 GHz 8-Watt Internally-Matched Power FET FEATURES · · · · · · · · 10.70 11.70 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.0 dBm Output Power at 1dB Compression 6 dB Power Gain at 1dB Compression 30% Power Added Efficiency -46 dBc IM3 at Po = 28.5 dBm SCL Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH DESCRIPTION The EIC1011-8 EIC1011-8 is a high power, highly linear, single stage MFET amplifier in a flange mount package. This amplifier features Excelics' unique MESFET transistor technology. Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB G PAE Id1dB PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 10.7-11.7GHz VDS = 10 V, IDSQ 2200mA Gain at 1dB Compression f = 10.7-11.7GHz VDS = 10 V, IDSQ 2200mA Gain Flatness f = 10.7-11.7GHz VDS = 10 V, IDSQ 2200mA Power Added Efficiency at 1dB Compression VDS = 10 V, IDSQ 2200mA f = 10.7-11.7GHz Drain Current at 1dB Compression f = 10.7-11.7GHz IM3 Output 3rd Order Intermodulation Distortion 2 f = 10 MHz 2-Tone Test; Pout = 28.5 dBm S.C.L VDS = 10 V, IDSQ 65% IDSS f = 11.70 GHz IDSS Saturated Drain Current VP Pinch-off Voltage RTH Thermal Resistance MIN TYP MAX 38.5 39.0 dBm 5.0 6.0 dB ±0.6 dB 30 2200 -43 % 2600 -46 mA dBc VDS = 3 V, VGS = 0 V 4000 4500 VDS = 3 V, IDS = 40 mA 3 UNITS -2.5 -4.0 3.5 4.0 mA V o C/W Notes: 1. Tested with 100 Ohm gate resistor. 2. S.C.L. = Single Carrier Level. 3. Overall Rth depends on case mounting. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 2 Revised October 2003 EIC1011-8 EIC1011-8 PACKAGE OUTLINE SOURCE Dimensions in inches, Tolerance + .005 unless otherwise specified Excelics EIC1011-8 EIC1011-8 YM SN ORDERING INFORMATION Part Number Grade1 fTest (GHz) P1dB (min) IM3 (min)2 EIC1011-8 EIC1011-8 Industrial 10.70-11.70 GHz 38.5 -43 Notes: 1. Contact factory for military and hi-rel grades. 2. Exact test conditions are specified in "Electrical Characteristics" table. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 2 of 2 Revised October 2003